AD ADG774A

a
Low Voltage 400 MHz Quad 2:1 Mux
with 3 ns Switching Time
ADG774A
FEATURES
Bandwidth >400 MHz
Low Insertion Loss and On Resistance: 2.2 Typical
On-Resistance Flatness 0.3 Typical
Single 3 V/5 V Supply Operation
Very Low Distortion: <0.3%
Low Quiescent Supply Current (1 nA Typical)
Fast Switching Times
tON 6 ns
tOFF 3 ns
TTL/CMOS Compatible
FUNCTIONAL BLOCK DIAGRAM
ADG774A
S1A
D1
S1B
S2A
D2
S2B
S3A
D3
S3B
S4A
D4
S4B
1 OF 2
DECODER
EN
IN
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG774A is a monolithic CMOS device comprising four
2:1 multiplexer/demultiplexers with high impedance outputs.
The CMOS process provides low power dissipation yet gives
high switching speed and low on resistance. The on-resistance
variation is typically less than 0.5 Ω over the input signal range.
1. Wide bandwidth data rates >400 MHz.
The bandwidth of the ADG774A is typically 400 MHz and this,
coupled with low distortion (typically 0.3%), makes the part
suitable for switching of high-speed data signals.
The on-resistance profile is very flat over the full analog input
range ensuring excellent linearity and low distortion. CMOS construction ensures ultralow power dissipation.
2. Ultralow Power Dissipation.
3. Low leakage over temperature.
4. Break-Before-Make Switching.
This prevents channel shorting when the switches are configured as a multiplexer.
5. Crosstalk is typically –70 dB @ 10 MHz.
6. Off isolation is typically –65 dB @ 10 MHz.
The ADG774A operates from a single 3.3 V/5 V supply and is
TTL logic compatible. The control logic for each switch is shown
in the Truth Table.
These switches conduct equally well in both directions when
ON. In the OFF condition, signal levels up to the supplies are
blocked. The ADG774A switches exhibit break-before-make
switching action.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2001
ADG774A–SPECIFICATIONS
SINGLE SUPPLY1 (V
DD
= 5 V 10%, GND = 0 V. All specifications TMIN to TMAX unless otherwise noted.)
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
On Resistance Match Between
Channels (∆RON)
B Version
TMIN to
25C
TMAX
0 to 2.5
2.2
3.5
4
0.15
0.5
On Resistance Flatness (RFLAT(ON))
0.3
0.6
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
± 0.001
± 0.1
± 0.001
± 0.1
± 0.001
± 0.1
DYNAMIC CHARACTERISTICS2
tON, tON (EN)
tOFF, tOFF (EN)
Break-Before-Make Time Delay, tD
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth –3 dB
Distortion
Charge Injection
CS (OFF)
CD (OFF)
CD, CS (ON)
Test Conditions/Comments
V
Ω typ
Ω max
VD = 0 V to 1 V; IS = –10 mA
Ω typ
Ω max
Ω typ
Ω max
2.4
0.8
V min
V max
± 0.1
3
µA typ
µA max
pF typ
VIN = VINL or VINH
6
12
3
6
3
1
–65
–70
400
0.3
6
5
7.5
12
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
MHz typ
% typ
pC typ
pF typ
pF typ
pF typ
CL = 35 pF, RL = 50 Ω;
VS = 2 V; Test Circuit 4
CL = 35 pF, RL = 50 Ω;
VS = 2 V; Test Circuit 4
CL = 35 pF, RL = 50 Ω;
VS1 = VS2 = 2 V; Test Circuit 5
f = 10 MHz; RL = 50 Ω; Test Circuit 7
f = 10 MHz; RL = 50 Ω; Test Circuit 8
Test Circuit 6, RL = 50 Ω;
RL = 100 Ω
CL = 1 nF; Test Circuit 9, VS = 0 V
1
0.001
VD = 0 V to 1 V; IS = –10 mA
± 0.25
± 0.25
POWER REQUIREMENTS
IDD
VD = 0 V to 1 V; IS = –10 mA
nA typ
nA max
nA typ
nA max
nA typ
nA max
± 0.25
0.001
CIN, Digital Input Capacitance
Unit
µA max
µA typ
VD = 3 V, VS = 1 V; VD = 1 V, VS = 3 V;
Test Circuit 2
VD = 3 V, VS = 1 V; VD = 1 V, VS = 3 V;
Test Circuit 2
VD = VS = 3 V; VD = VS = 1 V; Test Circuit 3
VDD = 5.5 V
Digital Inputs = 0 V or VDD
NOTES
1
Temperature ranges are as follows: B Version, –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. 0
ADG774A
1
SINGLE SUPPLY
(VDD = 3 V 10%, GND = 0 V. All specifications TMIN to TMAX unless otherwise noted.)
B Version
TMIN to
25C
TMAX
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
0 to 1.5
4
6
On Resistance Match Between
Channels (∆RON)
7
± 0.25
VD = 2 V, VS = 1 V; VD = 1 V, VS = 2 V;
Test Circuit 2
VD = 2 V, VS = 1 V; VD = 1 V, VS = 2 V;
Test Circuit 2
VD = VS = 2 V; VD = VS = 1 V; Test Circuit 3
2.0
0.4
V min
V max
± 0.1
3
µA typ
µA max
pF typ
VIN = VINL or VINH
7
14
4
8
3
1
–65
–70
400
1.5
4
5
7.5
12
ns typ
ns max
ns typ
ns max
ns typ
ns min
dB typ
dB typ
MHz typ
% typ
pC typ
pF typ
pF typ
pF typ
CL = 35 pF, RL = 50 Ω;
VS = 1.5 V; Test Circuit 4
CL = 35 pF, RL = 50 Ω;
VS = 1.5 V; Test Circuit 4
CL = 35 pF, RL = 50 Ω;
VS1 = VS2 = 1.5 V; Test Circuit 5
f = 10 MHz; RL = 50 Ω, Test Circuit 7
f = 10 MHz; RL = 50 Ω, Test Circuit 8
Test Circuit 6; RL = 50 Ω
RL = 100 Ω
CL = 1 nF; Test Circuit 9, VS = 0 V
3
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
± 0.25
± 0.25
0.001
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS2
tON, tON (EN)
tOFF, tOFF (EN)
Break-Before-Make Time Delay, tD
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth –3 dB
Distortion
Charge Injection
CS (OFF)
CD (OFF)
CD, CS (ON)
VD = 0 V to 1 V; IS = –10 mA
nA typ
nA max
nA typ
nA max
nA typ
nA max
1.5
± 0.001
± 0.1
± 0.001
± 0.1
± 0.001
± 0.1
V
Ω typ
Ω max
VD = 0 V to 1 V; IS = –10 mA
0.5
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Test Conditions/Comments
Ω typ
Ω max
Ω typ
Ω max
0.15
On Resistance Flatness (RFLAT(ON))
Unit
POWER REQUIREMENTS
IDD
µA max
µA typ
1
0.001
VD = 0 V to 1 V; IS = –10 mA
VDD = 3.3 V
Digital Inputs = 0 V or VDD
NOTES
1
Temperature ranges are as follows: B Version, –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
Table I. Truth Table
REV. 0
EN
IN
D1
D2
D3
D4
Function
1
0
0
X
0
1
Hi-Z
S1A
S1B
Hi-Z
S2A
S2B
Hi-Z
S3A
S3B
Hi-Z
S4A
S4B
DISABLE
IN = 0
IN = 1
–3–
ADG774A
ABSOLUTE MAXIMUM RATINGS 1
TERMINOLOGY
(TA = 25°C unless otherwise noted)
VDD
GND
S
D
IN
EN
RON
∆RON
Most Positive Power Supply Potential.
Ground (0 V) Reference.
Source Terminal. May be an input or output.
Drain Terminal. May be an input or output.
Logic Control Input.
Logic Control Input.
Ohmic resistance between D and S.
On Resistance match between any two channels
i.e., RON max – RON min.
RFLAT(ON)
Flatness is defined as the difference between the
maximum and minimum value of on resistance
as measured over the specified analog signal
range.
Source Leakage Current with the switch “OFF.”
IS (OFF)
ID (OFF)
Drain Leakage Current with the switch “OFF.”
ID, IS (ON) Channel Leakage Current with the switch “ON.”
VD (VS)
Analog Voltage on Terminals D, S.
CS (OFF)
“OFF” Switch Source Capacitance.
CD (OFF)
“OFF” Switch Drain Capacitance.
CD, CS (ON) “ON” Switch Capacitance.
tON
Delay between applying the digital control input
and the output switching on. See Test Circuit 4.
tOFF
Delay between applying the digital control input
and the output switching Off.
tD
“OFF” time or “ON” time measured between
the 90% points of both switches, when switching
from one address state to another. See Test
Circuit 5.
Crosstalk
A measure of unwanted signal that is coupled
through from one channel to another as a result
of parasitic capacitance.
Off Isolation A measure of unwanted signal coupling through an
“OFF” switch.
Bandwidth Frequency response of the switch in the ON
state measured at 3 dB down.
Distortion
RFLAT(ON)/RL
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
Analog, Digital Inputs2 . . . . . . . . . . . –0.3 V to VDD + 0.3 V or
. . . . . . . . . . . . . . . . . . . . . . . 30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 100 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
QSOP Package, Power Dissipation . . . . . . . . . . . . . . 566 mW
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . 149.97°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time.
2
Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
PIN CONFIGURATION
(QSOP)
IN 1
16
VDD
S1A 2
15
EN
S1B 3
14
S4A
ADG774A
S4B
TOP VIEW
S2A 5 (Not to Scale) 12 D4
D1 4
13
S2B 6
11
S3A
D2 7
10
S3B
GND 8
9
D3
ORDERING GUIDE
Model
Temperature Range
Package Descriptions
Package Options
ADG774ABRQ
–40°C to +85°C
RQ = 0.15" Quarter Size Outline Package (QSOP)
RQ-16
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG774A features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–4–
WARNING!
ESD SENSITIVE DEVICE
REV. 0
Typical Performance Characteristics–ADG774A
20
20
20
TA = 25 C
VDD = 5V
TA = 25 C
16
16
15
VDD = 5.0V
8
12
RON – 12
RON – RON – VDD = 3.0V
8
VDD = 2.7V
+85 C
VDD = 4.5V
5
4
VDD = 3.3V
0
2
3
4
5
0
1
VS OR VD OR DRAIN SOURCE VOLTAGE – V
TPC 1. On Resistance as a Function
of VD (VS) for Various Single Supplies
0.025
VDD = 5.0V
VSS = 0V
TEMP = 25 C
0.020
0.015
+85 C
10
+25 C
0.020
0.015
0.010
0.005
CURRENT – nA
CURRENT – nA
ID (OFF)
0
–0.005
IS, ID (ON)
IS (OFF)
–0.010
5
–40 C
0
0.5
1.0
1.5
2.0
2.5
3.0
VS OR VD OR DRAIN SOURCE VOLTAGE – V
ID (OFF)
0
–0.005
–0.015
–0.020
–0.025
0
VS
3
2
1
VS – V(VD = VDD – VS)
4
–0.025
0
VS
TPC 5. Leakage Current as a
Function of VD (VS)
0.02
0.01
0.03
ID, IS (ON)
ID (OFF)
0
IS (OFF)
–0.01
0.02
0.01
ID, IS (ON)
–0.01
–0.02
–0.03
–0.03
–0.04
–0.04
IS (OFF)
ID (OFF)
5
15
25 35
45
55
65
TEMPERATURE – C
75
85
TPC 7. Leakage Current as a Function
of Temperature
REV. 0
3.0
–40
–60
–80
–0.05
–0.05
2.5
–20
0
–0.02
1.0
1.5
2.0
VS – V(VD = VDD – VS)
0
VDD = 3.0V
VSS = 0V
TEMP = 25 C
VD = 2V/1V
VS = 1V/2V
0.04
CURRENT – nA
0.03
0.5
TPC 6. Leakage Current as a
Function of VD (VS)
0.05
VDD = 5.0V
VSS = 0V
TEMP = 25 C
VD = 3V/1V
VS = 1V/3V
0.04
IS (OFF)
–0.010
–0.020
0.05
ID, IS (ON)
0.005
–0.015
TPC 4. On Resistance as a Function
of VD (VS) for Different Temperatures
with 3 V Single Supplies
VDD = 3.0V
VSS = 0V
TEMP = 25 C
0.010
ATTENUATION – dB
RON – 15
0
1
2
3
4
5
VS OR VD OR DRAIN SOURCE VOLTAGE – V
TPC 3. On Resistance as a Function
of VD (VS) for Different Temperatures
with 5 V Single Supplies
0.025
VDD = 3V
CURRENT – nA
–40 C
0
1.0
1.5
2.0
2.5
3.0
0
0.5
VS OR VD OR DRAIN SOURCE VOLTAGE – V
TPC 2. On Resistance as a Function
of VD (VS) for Various Single Supplies
20
0
+25 C
4
VDD = 5.5V
0
10
5
15
25 35
45 55
65
TEMPERATURE – C
75
TPC 8. Leakage Current as a
Function of Temperature
–5–
85
–100
0.3
0.1
1
10
100
FREQUENCY – MHz
1000
TPC 9. Off Isolation vs. Frequency
ADG774A
0
0
0
–1
–2
ON RESPONSE – dB
–40
–60
VDD = 3V
–5
QINJ – pC
ATTENUATION – dB
–20
–3
–4
VDD = 5V
–10
–5
–80
–6
–100
0.3
0.1
1
10
100
FREQUENCY – MHz
–15
0.3
1000
TPC 10. Crosstalk vs. Frequency
–7
0.1
1
10
100
FREQUENCY – MHz
0
1000
TPC 11. Bandwidth
0.5
1.0
1.5
VOLTAGE – V
2.0
2.5
TPC 12. Charge Injection vs. Source
Voltage
10 BASE TX+
TX1
ADG774A
10 BASE TX–
100 BASE TX+
TX2
100 BASE TX–
RJ45
10 BASE TX+
RX1
10 BASE TX–
TRANSFORMER
100 BASE TX+
RX2
100 BASE TX–
10 BASE TX
100 BASE TX
Figure 1. Full Duplex Transceiver
TX1
120
100
RX1
Figure 2. Loop Back
Figure 3. Line Termination
–6–
Figure 4. Line Clamp
REV. 0
ADG774A
Test Circuits
IDS
V1
IS (OFF)
S
A
D
ID (OFF)
S
D
VS
VS
ID (ON)
A
S
NC
D
VD
A
VD
RON = V1/IDS
NC = NO CONNECT
Test Circuit 3. On Leakage
Test Circuit 2. Off Leakage
Test Circuit 1. On Resistance
5V
0.1F
VIN
3V
VDD
S
50%
50%
VOUT
D
90%
VS
RL
100
IN
CL
35pF
90%
VOUT
tOFF
tON
EN
GND
Test Circuit 4. Switching Times
5V
0.1F
VDD
3V
S1A
VOUT
D1
VS
VIN
RL
100
VS
CL
35pF
50%
50%
0V
S1B
VOUT
50%
50%
VS
DECODER
tD
EN
tD
GND
Test Circuit 5. Break-Before-Make Time Delay
VDD
VDD
0.1F
0.1F
ADG774A
ADG774A
NETWORK
ANALYZER
S1A
NETWORK
ANALYZER
S1A
50
50
VS
IN
VIN
VS
VIN
VOUT
D1
50
EN
GND
Test Circuit 6. Bandwidth
REV. 0
VOUT
D1
50
EN
50
IN
GND
Test Circuit 7. Off Isolation
–7–
ADG774A
VDD
0.1F
NETWORK
ANALYZER
ADG774A
C02373–1.5–6/01(0)
50
S1A
VS
S2A
VOUT
RL
50
IN
D2
VIN
D1
EN
50
GND
Test Circuit 8. Channel-to-Channel Crosstalk
5V
VDD
ADG774A
VS
S1A
S1B
CL
S2A
1nF
S2B
CL
S3A
1nF
S3B
CL
S4A
1nF
S4B
CL
D1 VOUT
3V
VIN
D2 VOUT
VOUT
D3 VOUT
VOUT
QINJ = CL VOUT
D4 VOUT
1nF
1 OF 2
DECODER
EN
IN
Test Circuit 9. Charge Injection
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
16-Lead QSOP
(RQ-16)
PRINTED IN U.S.A.
RS
0.197 (5.00)
0.189 (4.80)
9
16
0.244 (6.20)
0.228 (5.79)
0.157 (3.99)
0.150 (3.81)
1
8
PIN 1
0.059 (1.50)
MAX
0.010 (0.25)
0.004 (0.10)
0.025
(0.64)
BSC
0.069 (1.75)
0.053 (1.35)
8
0
0.012 (0.30)
SEATING 0.010 (0.20)
0.008 (0.20) PLANE
0.007 (0.18)
–8–
0.050 (1.27)
0.016 (0.41)
REV. 0