a CMOS Low Voltage 4 ⍀ Dual SPDT Switch ADG736 FEATURES +1.8 V to +5.5 V Single Supply 2.5 ⍀ (Typ) On Resistance Low On-Resistance Flatness –3 dB Bandwidth >200 MHz Rail-to-Rail Operation 10-Lead SOIC Package Fast Switching Times tON 16 ns tOFF 8 ns Typical Power Consumption (<0.01 W) TTL/CMOS Compatible APPLICATIONS Battery Powered Systems Communication Systems Sample-and-Hold Systems Audio Signal Routing Audio and Video Switching Mechanical Reed Relay Replacement FUNCTIONAL BLOCK DIAGRAM ADG736 S1A S1B D1 IN1 S2A S2B D2 IN2 SWITCHES SHOWN FOR A LOGIC "1" INPUT GENERAL DESCRIPTION PRODUCT HIGHLIGHTS The ADG736 is a monolithic device comprising two independently selectable CMOS SPDT switches. These switches are designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage currents and wide input signal bandwidth. 1. +1.8 V to +5.5 V Single Supply Operation. The ADG736 offers high performance, including low on resistance and fast switching times and is fully specified and guaranteed with +3 V and +5 V supply rails. The on resistance profile is very flat over the full analog signal range. This ensures excellent linearity and low distortion when switching audio signals. Fast switching speed also makes the part suitable for video signal switching. The ADG736 can operate from a single +1.8 V to +5.5 V supply, making it ideally suited to portable and battery powered instruments. Each switch conducts equally well in both directions when on and has an input signal range that extends to the power supplies. The ADG736 exhibits break-before-make switching action. The ADG736 is available in a 10-lead µSOIC package. 2. Very Low RON (4.5 Ω Max at 5 V, 8 Ω Max at 3 V). At supply voltage of +1.8 V, RON is typically 35 Ω over the temperature range. 3. Low On-Resistance Flatness. 4. –3 dB Bandwidth >200 MHz. 5. Low Power Dissipation. CMOS construction ensures low power dissipation. 6. Fast tON/tOFF. 7. Break-Before-Make Switching Action. 8. 10-Lead µSOIC Package. REV. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1998 ADG736–SPECIFICATIONS1 (Vnoted.)= +5 V ⴞ 10%, GND = 0 V. All Specifications –40ⴗC to +85ⴗC, unless otherwise DD Parameter ANALOG SWITCH Analog Signal Range On-Resistance (RON) B Version –40ⴗC to +25ⴗC +85ⴗC 0 V to VDD 2.5 4 On-Resistance Match Between Channels (∆RON) On-Resistance Flatness (RFLAT(ON)) 4.5 0.5 Channel ON Leakage ID, IS (ON) ± 0.01 ± 0.1 ± 0.01 ± 0.1 DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH 0.005 DYNAMIC CHARACTERISTICS2 tON 12 Test Conditions/Comments V Ω typ Ω max VS = 0 V to VDD, IDS = –10 mA; Test Circuit 1 Ω typ Ω max Ω typ Ω max 0.1 0.4 1.2 LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Units VS = 0 V to VDD, IDS = –10 mA VDD = +5.5 V VS = 4.5 V/1 V, VD = 1 V/4.5 V; Test Circuit 2 VS = VD = 1 V or 4.5 V; Test Circuit 3 ± 0.3 nA typ nA max nA typ nA max 2.4 0.8 V min V max ± 0.1 µA typ µA max VIN = VINL or VINH RL = 300 Ω, CL = 35 pF VS = 3 V, Test Circuit 4 RL = 300 Ω, CL = 35 pF VS = 3 V, Test Circuit 4 RL = 300 Ω, CL = 35 pF VS1 = VS2 = 3 V, Test Circuit 5 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 6 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 7 RL = 50 Ω, CL = 5 pF; Test Circuit 8 ± 0.3 tOFF 5 Break-Before-Make Time Delay, tD 7 Off Isolation –62 –82 ns typ ns max ns typ ns max ns typ ns min dB typ dB typ Channel-to-Channel Crosstalk –62 –82 dB typ dB typ Bandwidth –3 dB CS (OFF) CD, CS (ON) 200 9 32 MHz typ pF typ pF typ 16 8 1 POWER REQUIREMENTS IDD VS = 0 V to VDD, IDS = –10 mA µA typ µA max 0.001 1.0 VDD = +5.5 V Digital Inputs = 0 V or 5 V NOTES 1 Temperature ranges are as follows: B Version: –40°C to +85°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. –2– REV. 0 ADG736 SPECIFICATIONS1 (V DD = +3 V ⴞ 10%, GND = 0 V. All Specifications –40ⴗC to +85ⴗC, unless otherwise noted.) Parameter B Version –40ⴗC to +25ⴗC +85ⴗC ANALOG SWITCH Analog Signal Range On-Resistance (RON) 5 On-Resistance Match Between Channels (∆RON) Channel ON Leakage ID, IS (ON) Test Conditions/Comments 0 V to VDD 5.5 8 V Ω typ Ω max VS = 0 V to VDD, IDS = –10 mA; Test Circuit 1 0.4 2.5 Ω typ Ω max Ω typ VS = 0 V to VDD, IDS = –10 mA ± 0.3 nA typ nA max nA typ nA max VDD = +3.3 V VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 2 VS = VD = 1 V or 3 V; Test Circuit 3 2.0 0.4 V min V max ± 0.1 µA typ µA max VIN = VINL or VINH RL = 300 Ω, CL = 35 pF VS = 2 V; Test Circuit 4 RL = 300 Ω, CL = 35 pF VS = 2 V; Test Circuit 4 RL = 300 Ω, CL = 35 pF VS1 = VS2 = 2 V; Test Circuit 5 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 6 RL = 50 Ω, CL = 5 pF, f = 10 MHz RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 7 RL = 50 Ω, CL = 5 pF; Test Circuit 8 0.1 On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Units ± 0.01 ± 0.1 ± 0.01 ± 0.1 DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH 0.005 DYNAMIC CHARACTERISTICS2 tON 14 ± 0.3 tOFF 6 Break-Before-Make Time Delay, tD 7 Off Isolation –62 –82 ns typ ns max ns typ ns max ns typ ns min dB typ dB typ Channel-to-Channel Crosstalk –62 –82 dB typ dB typ Bandwidth –3 dB CS (OFF) CD, CS (ON) 200 9 32 MHz typ pF typ pF typ 20 10 1 POWER REQUIREMENTS IDD µA typ µA max 0.001 1.0 NOTES 1 Temperature ranges are as follows: B Version: –40°C to +85°C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. REV. 0 –3– VS = 0 V to VDD, IDS = –10 mA VDD = +3.3 V Digital Inputs = 0 V or 3 V ADG736 ABSOLUTE MAXIMUM RATINGS 1 TERMINOLOGY (TA = +25°C unless otherwise noted) VDD GND S D IN RON ∆RON VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V Analog, Digital Inputs2 . . . . . . . . . . . . –0.3 V to V DD +0.3 V or 30 mA, Whichever Occurs First Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA (Pulsed at 1 ms, 10% Duty Cycle Max) Operating Temperature Range Industrial (B Version) . . . . . . . . . . . . . . . . . –40°C to +85°C Storage Temperature Range . . . . . . . . . . . . . –65°C to +150°C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150°C µSOIC Package, Power Dissipation . . . . . . . . . . . . . . . 315 mW θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 205°C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215°C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV RFLAT(ON) IS (OFF) ID, IS (ON) VD (VS) CS (OFF) CD, CS (ON) tON NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S or D will be clamped by internal diodes. Current should be limited to the maximum ratings given. tOFF tD ORDERING GUIDE Model Temperature Range Brand1 Package Option2 ADG736BRM –40°C to +85°C SAB RM-10 Crosstalk NOTES 1 Brand = Due to small package size, these three characters represent the part number. 2 RM = µSOIC. Off Isolation Bandwidth PIN CONFIGURATION (10-Lead SOIC) IN1 1 10 D1 S1A 2 9 S1B ADG736 On Response On Loss TOP VIEW 8 VDD (Not to Scale) 7 S2B S2A 4 GND 3 IN2 5 6 Most positive power supply potential. Ground (0 V) reference. Source terminal. May be an input or output. Drain terminal. May be an input or output. Logic control input. Ohmic resistance between D and S. On resistance match between any two channels i.e., RONmax–RONmin. Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. Source leakage current with the switch “OFF.” Channel leakage current with the switch “ON.” Analog voltage on terminals D, S. “OFF” switch source capacitance. “ON” switch capacitance. Delay between applying the digital control input and the output switching on. See Test Circuit 4. Delay between applying the digital control input and the output switching off. “OFF” time or “ON” time measured between the 90% points of both switches, when switching from one address state to another. See Test Circuit 5. A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. A measure of unwanted signal coupling through an “OFF” switch. The frequency at which the output is attenuated by –3 dBs. The frequency response of the “ON” switch. The voltage drop across the “ON” switch, seen on the On Response versus frequency plot as how many dBs the signal is away from 0 dB at very low frequencies. Table I. Truth Table D2 Logic Switch A Switch B 0 1 OFF ON ON OFF CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG736 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. –4– WARNING! ESD SENSITIVE DEVICE REV. 0 Typical Performance Characteristics–ADG736 6 10m 5.5 1m TA = +258C 5 VDD = +5V TA = +258C VDD = +2.7V 4.5 100m VDD = +3V 3.5 3 ISUPPLY – A RON – V 4 VDD = +4.5V 2.5 10m 1m 2 1.5 100n VDD = +5V 1 10n 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VD OR VS – DRAIN OR SOURCE VOLTAGE – Volts 1n 100 5 Figure 1. On Resistance as a Function of VD (V S) Single Supplies 10k 100k FREQUENCY – Hz 1M 10M Figure 4. Supply Current vs. Input Switching Frequency 6 0 5.5 VDD = +3V 5 VDD = +5V TA = +258C +858C ON RESPONSE – dB 4.5 +258C 4 RON – V 1k 3.5 3 2.5 2 –408C –2 –4 1.5 1 0.5 –6 10k 0 0 0.5 1.5 2 2.5 1 VD OR VS – SOURCE OR DRAIN VOLTAGE – Volts 3 1M 10M FREQUENCY – HZ 100M Figure 5. On Response vs. Frequency Figure 2. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 3 V 6 –30 5.5 –40 VDD = +5V 5 OFF ISOLATION – dB 4 3.5 +258C 3 VDD = +5V, +3V TA = +258C –50 4.5 RON – V 100k +858C 2.5 2 –60 –70 –80 –90 –100 1.5 –110 1 –408C –120 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VD OR VS – DRAIN OR SOURCE VOLTAGE – Volts –130 10k 5 Figure 3. On Resistance as a Function of VD (VS) for Different Temperatures VDD = 5 V REV. 0 100k 1M 10M FREQUENCY – Hz Figure 6. Off Isolation vs. Frequency –5– 100M ADG736 –30 –40 CROSSTALK – dB –50 VDD = +5V, +3V TA = +258C –60 –70 –80 –90 –100 –110 –120 –130 10k 100k 1M 10M FREQUENCY – HZ 100M Figure 7. Crosstalk vs. Frequency APPLICATIONS VDD V+ CH1 S1A D CH2 VOUT S1B 75V A=2 75V RL ADG736 75V 75V 250V IN1 250V Figure 8. Using the ADG736 to Select Between Two Video Signals –6– REV. 0 ADG736 Test Circuits IDS V1 IS (OFF) S D S A VS S D VS D ID (ON) A VS VD VD RON = V1/IDS Test Circuit 1. On Resistance Test Circuit 2. Off Leakage Test Circuit 3. On Leakage VDD 0.1mF VDD 50% 50% VOUT RL 300V IN VS VIN D S VS CL 35pF 90% 90% VOUT GND t ON t OFF Test Circuit 4. Switching Times VDD 0.1mF VDD VIN SA VS D SB VIN RL 300V CL 35pF 50% 50% 0V VS VOUT 50% 50% VOUT 90% 0V tD tD GND Test Circuit 5. Break-Before-Make Time Delay, tD VDD 0.1mF VDD VDD 0.1mF VDD SA SB VS VIN S D S D 50V VIN1 VS D VIN2 VOUT RL 50V IN NC GND GND RL 50V VOUT CHANNEL-TO-CHANNEL CROSSTALK = 20 3 LOG | VS /VOUT | Test Circuit 6. Off Isolation Test Circuit 7. Channel-to-Channel Crosstalk VDD 0.1mF VDD S VS VIN D IN GND Test Circuit 8. Bandwidth REV. 0 VOUT RL 50V –7– ADG736 OUTLINE DIMENSIONS Dimensions shown in inches and (mm). C3384–8–10/98 10-Lead SOIC (RM-10) 0.122 (3.10) 0.114 (2.90) 10 6 0.199 (5.05) 0.187 (4.75) 0.122 (3.10) 0.114 (2.90) 1 5 PIN 1 0.0197 (0.50) BSC 0.037 (0.94) 0.031 (0.78) 0.120 (3.05) 0.112 (2.85) 0.120 (3.05) 0.112 (2.85) 0.043 (1.10) MAX 0.028 (0.70) 0.016 (0.40) PRINTED IN U.S.A. 68 0.006 (0.15) 0.012 (0.30) SEATING 08 PLANE 0.009 (0.23) 0.002 (0.05) 0.006 (0.15) 0.005 (0.13) –8– REV. 0