Transistors with built-in Resistor UNRL110/111/113/114/115 Silicon PNP epitaxial planer type Unit: mm For digital circuit 0.020±0.010 2 0.80±0.05 3 ■ Features 0.60±0.05 1.00±0.05 • UNRL110 • UNRL111 • UNRL113 • UNRL114 • UNRL115 (R1) 47 kΩ 10 kΩ 47 kΩ 10 kΩ 10 kΩ 0.50 ■ Resistance by Part Number Marking Symbol P A B R M 1 4 3 0.30±0.03 (R2) 10 kΩ 47 kΩ 47 kΩ 0.05±0.03 1 4 0.20±0.03 • Mold leadless type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing. • The PCB mounting area is 1/10 of that of lead type package (3-pin MINI-type package). 2 0.05±0.03 0.60 1: Base 2: Emitter 3: Collector 4: Collector ML4-N1 Package ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector to base voltage Parameter VCBO −50 V Collector to emitter voltage VCEO −50 V Collector current IC −100 mA Total power dissipation * PT 150 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Internal Connection 3 2 R2 R1 4 1 Note) *: Printed circuit board copper foil for collector portion area: 20.0 mm2 or more, thickness: 1.6 mm ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector cutoff current Emitter cutoff current UNRL111 Symbol Max Unit ICBO VCB = −50 V, IE = 0 Conditions Min Typ − 0.1 µA ICEO VCE = −50 V, IB = 0 − 0.5 IEBO VEB = −6 V, IC = 0 − 0.5 UNRL114 − 0.2 UNRL113 − 0.1 mA − 0.01 UNRL110/115 Collector to base voltage VCBO IC = −10 µA, IE = 0 −50 V Collector to emitter voltage VCEO IC = −2 mA, IB = 0 −50 V VCE = −10 V, IC = −5 mA 35 Forward current transfer ratio UNRL111 hFE UNRL113/114 80 UNRL110/115 160 Collector to emitter saturation voltage Publication date: July 2001 VCE(sat) IC = −10 mA, IB = − 0.3 mA SJH00044AED 460 − 0.25 V 1 UNRL110/111/113/114/115 ■ Electrical Characteristics(continued) Ta = 25°C ± 3°C Symbol Conditions Min High-level output voltage Parameter VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ −4.9 Low-level output voltage VOL Typ Max V VCC = −5 V, VB = −2.5 V, RL = 1 kΩ − 0.2 V VCC = −5 V, VB = −3.5 V, RL = 1 kΩ UNRL113 VCB = −10 V, IE = 1 mA, f = 200 MHz Transition frequency fT Input resistance R1 −30% 10 R1/R2 0.8 1.0 1.2 0.17 0.21 0.25 UNRL111/114/115 80 UNRL110/113 Resistance ratio Unit MHz +30% kΩ 47 UNRL111/113 UNRL114 Common characteristics chart PT Ta 180 Total power dissipation PT (mW) 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 Ambient temperature Ta (°C) Characteristics charts of UNRL110 IC VCE VCE(sat) IC −60 − 0.2 mA −40 − 0.1 mA −20 0 −2 −4 −6 −8 −10 −12 Collector to emitter voltage VCE (V) 2 IC / IB = 10 −30 −10 −3 −1 Ta = 75°C −0.3 25°C −0.1 −0.03 0 hFE IC 400 −25°C −0.01 −0.1 −0.3 −1 −3 −10 −30 Collector current IC (mA) SJH00044AED VCE = –10 V Forward current transfer ratio hFE Collector current IC (mA) Ta = 25°C IB = −1.0 mA − 0.9 mA −100 − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA −100 Collector to emitter saturation voltage VCE(sat) (V) −120 −100 300 Ta = 75°C 200 25°C −25°C 100 0 −1 −3 −10 −30 −100 −300 −1 000 Collector current IC (mA) UNRL110/111/113/114/115 Cob VCB IO VIN 5 4 3 2 VO = −5 V Ta = 25°C −3 000 −30 −1 000 −10 −300 −100 −30 −10 1 −1 −3 −10 −30 −1 −0.4 −100 Collector to base voltage VCB (V) VO = − 0.2 V Ta = 25°C −3 −1 −0.3 −0.1 −0.03 −3 0 −0.1 −0.3 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C VIN IO −10 000 Output current IO (µA) Collector output capacitance Cob (pF) 6 −0.6 −0.8 −1.0 −1.2 −1.4 −0.01 −0.1 −0.3 −1 −3 −10 −30 −100 Output current IO (mA) Input voltage VIN (V) Characteristics charts of UNRL111 IC VCE VCE(sat) IC IB = −1.0 mA −140 Ta = 25°C − 0.9 mA Collector current IC (mA) −120 − 0.8 mA − 0.7 mA −100 − 0.6 mA − 0.5 mA −80 − 0.4 mA −60 − 0.3 mA −40 − 0.2 mA −20 0 − 0.1 mA 0 −2 −4 −6 −8 −10 −12 Collector to emitter saturation voltage VCE(sat) (V) −100 IC / IB = 10 −30 −10 −3 −1 −0.3 −0.03 −25°C −0.01 −0.1 −0.3 −3 −10 −30 3 2 1 −3 −10 80 40 −3 –10 000 −30 −100 Collector to base voltage VCB (V) −30 −100 −300 −1 000 VIN IO VO = −5 V Ta = 25°C −100 −3 000 −30 −1 000 −10 −300 −100 −30 −10 −1 −0.4 −10 Collector current IC (mA) −3 −1 −25°C 0 −1 −100 Input voltage VIN (V) 4 0 −0.1 −0.3 25°C 120 IO VIN f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) Collector output capacitance Cob (pF) −1 Ta = 75°C VCE = −10 V Collector current IC (mA) Cob VCB 5 Ta = 75°C 25°C −0.1 Collector to emitter voltage VCE (V) 6 hFE IC 160 Forward current transfer ratio hFE −160 VO = − 0.2 V Ta = 25°C −3 −1 −0.3 −0.1 −0.03 −0.6 −0.8 −1.0 −1.2 Input voltage VIN (V) SJH00044AED −1.4 −0.01 −0.1 −0.3 −1 −3 −10 −30 −100 Output current IO (mA) 3 UNRL110/111/113/114/115 Characteristics charts of UNRL113 IC VCE VCE(sat) IC IB = −1.0 mA −140 − 0.9 mA − 0.8 mA − 0.7 mA −120 Collector current IC (mA) Ta = 25°C − 0.6 mA −100 − 0.5 mA −80 − 0.4 mA −60 − 0.3 mA −40 − 0.2 mA −20 0 − 0.1 mA 0 −2 −4 −6 −8 −10 −12 Collector to emitter saturation voltage VCE(sat) (V) −100 IC / IB = 10 −30 −10 −3 −1 −0.3 −0.03 −25°C −0.01 −0.1 −0.3 −3 −10 −30 4 3 2 −10 100 −3 −30 VO = −5 V Ta = 25°C −1 000 −10 −300 −100 −30 −10 −1 −0.4 Collector to base voltage VCB (V) −30 −100 −300 −1 000 −100 −30 −100 −10 VIN IO −3 −3 −25°C −3 000 1 −1 200 Collector current IC (mA) Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 0 −0.1 −0.3 25°C 0 −1 −100 Ta = 75°C 300 IO VIN −10 000 Output current IO (µA) Collector output capacitance Cob (pF) −1 VCE = −10 V Collector current IC (mA) Cob VCB 5 Ta = 75°C 25°C −0.1 Collector to emitter voltage VCE (V) 6 hFE IC 400 Forward current transfer ratio hFE −160 VO = −0.2 V Ta = 25°C −3 −1 −0.3 −0.1 −0.03 −0.6 −0.8 −1.0 −1.2 −1.4 −0.01 −0.1 −0.3 Input voltage VIN (V) −1 −3 −10 −30 −100 Output current IO (mA) Characteristics charts of UNRL114 IC VCE VCE(sat) IC IB = −1.0 mA Collector current IC (mA) −120 −100 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA −60 − 0.3 mA − 0.2 mA −40 − 0.1 mA −20 0 0 −2 −4 −6 −8 −10 −12 Collector to emitter voltage VCE (V) 4 hFE IC IC / IB = 10 −30 −10 −3 −1 −0.3 −0.1 400 VCE = −10 V Forward current transfer ratio hFE Ta = 25°C −140 Collector to emitter saturation voltage VCE(sat) (V) −100 −160 Ta = 75°C 25°C 300 Ta = 75°C 200 25°C −25°C 100 −0.03 −25°C −0.01 −0.1 −0.3 −1 −3 −10 −30 Collector current IC (mA) SJH00044AED −100 0 −1 −3 −10 −30 −100 −300 −1 000 Collector current IC (mA) UNRL110/111/113/114/115 Cob VCB IO VIN f = 1 MHz IE = 0 Ta = 25°C 4 3 2 VO = −5 V Ta = 25°C −1 000 −3 000 −300 −1 000 −100 Output current IO (µA) 5 VIN IO –10 000 1 Input voltage VIN (V) Collector output capacitance Cob (pF) 6 −300 −100 –30 −10 −3 0 −0.1 −0.3 −1 −3 −10 −30 −1 −0.4 −100 Collector to base voltage VCB (V) VO = −0.2 V Ta = 25°C −30 −10 −3 −1 −0.3 −0.6 −0.8 −1.0 −1.2 −0.1 −0.1 −0.3 −1.4 −1 −3 −10 −30 Input voltage VIN (V) Output current IO (mA) VCE(sat) IC hFE IC −100 Characteristics charts of UNRL115 IC VCE IB = −1.0 mA −140 Collector current IC (mA) −120 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA −100 − 0.5 mA − 0.4 mA −80 − 0.3 mA −60 − 0.2 mA −40 − 0.1 mA −20 0 Collector to emitter saturation voltage VCE(sat) (V) −100 Ta = 25°C −30 −10 −3 −1 Ta = 75°C −0.3 25°C −0.1 VCE = −10 V 300 Ta = 75°C 200 25°C −25°C 100 −0.03 0 −2 −4 −6 −8 −10 −12 −25°C −0.01 −0.1 −0.3 −1 Collector to emitter voltage VCE (V) −10 −30 −10 000 2 1 −10 −30 −100 −1 000 −10 −300 −100 −30 −10 Collector to base voltage VCB (V) −1 −0.4 −30 −100 −30 −100 −300 −1 000 VO = −0.2 V Ta = 25°C −3 −1 −0.3 −0.1 −0.03 −3 −3 −10 VIN IO VO = −5 V Ta = 25˚C Input voltage VIN (V) 3 −1 −3 Collector current IC (mA) −3 000 Output current IO (µA) 4 0 −0.1 −0.3 0 −1 −100 IO VIN f = 1 MHz IE = 0 Ta = 25°C 5 −3 Collector current IC (mA) Cob VCB 6 Collector output capacitance Cob (pF) 400 IC / IB = 10 Forward current transfer ratio hFE −160 −0.6 −0.8 −1.0 −1.2 Input voltage VIN (V) SJH00044AED −1.4 −0.01 −0.1 −0.3 −1 −3 −10 −30 −100 Output current IO (mA) 5 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent 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