2SA1052 Silicon PNP Epitaxial ADE-208-1006A (Z) 2nd. Edition Mar. 2001 Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1052 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage VCEO –30 V Emitter to base voltage VEBO –5 V Collector current IC –100 mA Emitter current IE 100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –30 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage –30 — — V I C = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — V I E = –10 µA, IC = 0 Collector cutoff current I CBO — — –0.5 µA VCB = –20 V, IE = 0 Emitter cutoff current I EBO — — –0.5 µA VEB = –2 V, IC = 0 100 — 500 1 DC current transfer ratio hFE* Collector to emitter saturation voltage VCE(sat) — — –0.2 V I C = –10 mA, IB = –1 mA Base to emitter voltage VBE — — –0.75 V VCE = –12 V, IC = –2 mA Note: 1. The 2SA1052 is grouped by hFE as follows. Grade B C D Mark MB MC MD hFE 100 to 200 160 to 320 250 to 500 2 VCE = –12 V, IC = –2 mA 2SA1052 Typical Output Characteristics (1) –10 –25 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 300 200 100 –8 –20 –6 –15 –4 –10 –2 –5 µA IB = 0 0 0 100 150 50 Ambient Temperature Ta (°C) –0.2 –0.4 –0.6 –0.8 –1.0 Collector Emitter Voltage VCE (V) Typical Transfer Characteristics Typical Output Characteristics (2) –10 –5 –4 –10 –2 –5 µA VCE = –5 V –3 –2 25 –15 –6 –4 Ta = 75°C –20 –8 Collector Current IC (mA) Collector Current IC (mA) –25 –1 IB = 0 0 –5 –10 –15 –20 Collector Emitter Voltage VCE (V) –25 0 –0.2 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) 3 2SA1052 DC Current Transfer Ratio vs. Collector Current Gain Bandwidth Product vs. Collector Current 600 500 Gain Bandwidth Product fT (MHz) DC Current Transfer Ratio hFE 700 VCE = –5 V 500 400 300 200 –0.01 –0.1 –1.0 –10 VCE = –10 V 400 300 200 100 0 –0.5 –100 –1.0 Collector to Emitter Saturation Voltage VCE(sat) (V) Collector Current IC (mA) 4 Collector to Emitter Saturation Voltage vs. Collector Current –0.28 IC = 10 IB –0.24 –0.20 –0.16 –0.12 5°C –0.08 Ta =7 –0.04 25 0 –1 –2 –5 –10 Collector Current IC (mA) –2 –5 –10 –20 –50 –100 Collector Current IC (mA) –20 2SA1052 Package Dimensions As of January, 2001 0.65 Unit: mm 0.95 0.95 1.9 ± 0.2 + 0.10 0 – 0.1 2.8 + 0.2 – 0.6 0.16 – 0.06 0.65 1.5 ± 0.15 0.10 0.4 +– 0.05 + 0.2 1.1 – 0.1 0.3 2.95 ± 0.2 Hitachi Code JEDEC EIAJ Mass (reference value) MPAK — Conforms 0.011 g 5 2SA1052 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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