2SA1566 Silicon PNP Epitaxial ADE-208-1021 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SA1566 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –120 V Emitter to base voltage VEBO –5 V Collector current IC –100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –120 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage –120 — — V I C = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — V I E = –10 µA, IC = 0 Collector cutoff current I CBO — — –0.1 µA VCB = –70 V, IE = 0 Emitter cutoff current I EBO — — –0.1 µA VEB = –2 V, IC = 0 250 — 800 1 VCE = –12 V, IC = –2 mA*2 DC current transfer ratio hFE* Collector to emitter saturation voltage VCE(sat) — — –0.15 V I C = –10 mA, IB = –1 mA*2 Base to emitter voltage VBE(sat) — — –1.0 V I C = –10 mA, IB = –1 mA*2 Notes: 1. The 2SA1566 is grouped by hFE as follows. 2. Pulse test Grade D E Mark JID JIE hFE 250 to 500 400 to 800 2 2SA1566 Typical Output Characteristics –10 150 Collector Current IC (mA) Collector power dissipation Pc (mW) Maximum Collector Dissipation Curve 100 50 0 –16 –6 –14 –12 –10 –8 –4 –6 –4 –2 µA IB = 0 –2 –4 –8 –12 –16 –20 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 1,000 –100 VCE = –6 V Pulse Ta = 75°C Ta = 75°C –10 25 –25 –1.0 –0.1 0 –0.2 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) DC current transfer ratio hFE Collector Current IC (mA) –18 –8 0 50 100 150 Ambient Temperature Ta (°C) –20 Pulse 300 25 –25 100 30 VCE = –12 V Pulse 10 –1 –3 –10 –30 Collector Current IC (mA) –100 3 2SA1566 Gain Bandwidth Product vs. Collector Current –1.0 1,000 IC = 10 IB Pulse Gain bandwidth product fT (MHz) Collector to emitter saturation voltage VCE (sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current –0.3 –0.1 Ta = 75°C –25 25 –0.03 –0.01 –1 –3 –10 –30 Collector Current IC (mA) –100 500 VCE = –6 V Pulse 200 100 50 20 10 –0.5 –1.0 –2 –5 –10 –20 Collector Current IC (mA) Collector output capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 100 f = 1 MHz IE = 0 30 10 3 1 –1 4 –3 –10 –30 –100 Collector to Base Voltage VCB (V) –50 2SA1566 Package Dimensions As of January, 2001 0.65 Unit: mm 0.95 0.95 1.9 ± 0.2 + 0.10 0 – 0.1 2.8 + 0.2 – 0.6 0.16 – 0.06 0.65 1.5 ± 0.15 0.10 0.4 +– 0.05 + 0.2 1.1 – 0.1 0.3 2.95 ± 0.2 Hitachi Code JEDEC EIAJ Mass (reference value) MPAK — Conforms 0.011 g 5 2SA1566 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 6