2SD1209(K) Silicon NPN Epitaxial, Darlington ADE-208-1143 (Z) 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SA1193(K) Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SD1209(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector current IC 1 A Collector peak current iC(peak) 2 A Collector power dissipation PC 0.9 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 60 — — V I C = 0.1 mA, IE = 0 Collector cutoff current I CEO — — 100 µA VCE = 60 V, RBE = ∞ Emitter cutoff current I EBO — — 100 µA VEB = 7 V, IC = 0 DC current transfer ratio hFE 4000 — — Collector to emitter saturation voltage VCE(sat) — — 1.5 V I C = 500 mA, IB = 0.5 mA*1 Base to emitter saturation voltage VBE(sat) — — 2.0 V I C = 500 mA, IB = 0.5 mA*1 Note: 2 1. Pulse test VCE = 3 V, IC = 0.5 A*1 2SD1209(K) Area of Safe Operation Maximum Collector Dissipation Curve 10 iC(peak) 1.0 ms ms 0.5 =1 0.4 2 10 Collector Current IC (A) 0.8 0.2 0 0.1 10 20 50 100 1.0 2 5 Collector to Emitter Voltage VCE (V) 100 150 50 Ambient Temperature Ta (°C) DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics 0.4 Ta = 25°C Pulse 105 16 14 12 10 8 6 0.3 4 0.2 2 µA 0.1 IB = 0 0 3 4 5 1 2 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio hFE 0.5 Collector Current IC (A) Ta = 25°C 1 Shot Pulse 5 PW Collector Power Dissipation PC (W) 1.2 75 25 Ta = –25°C 104 VCE = 3 V Pulse 103 0.5 0.01 0.02 0.05 0.1 0.2 Collector Current IC (A) 1.0 3 Collector to Emitter Saturation Voltage VCE(sat) (V) 2SD1209(K) Typical Transfer Characteristics 10 VCE = 3 V Ta = 25°C Pulse Collector Current IC (A) 0.5 0.2 0.1 0.05 0.02 2 5 10 0.2 0.5 1.0 Base to Emitter Voltage VBE (V) Base to Emitter Saturation Voltage VBE(sat) (V) 0.01 0.1 4 Collector to Emitter Saturation Voltage vs. Collector Current 10 IC = 1000 IB Pulse 5 2 Ta = –25°C 1.0 0.5 25 0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.5 Collector Current IC (A) Base to Emitter Saturation Voltage vs. Collector Current 10 IC = 1000 IB Pulse 5 2 Ta = –25°C 1.0 25 75 0.5 0.2 0.1 0.01 0.02 75 0.5 0.05 0.1 0.2 Collector Current IC (A) 1.0 1.0 2SD1209(K) Package Dimensions As of January, 2001 Unit: mm 4.8 ± 0.4 2.3 Max 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.55Max 10.1 Min 8.0 ± 0.5 3.8 ± 0.4 0.5Max 1.27 2.54 Hitachi Code JEDEC EIAJ Mass (reference value) TO-92 Mod — Conforms 0.35 g 5 2SD1209(K) Cautions 1. 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