ETC 2SD1209(K)

2SD1209(K)
Silicon NPN Epitaxial, Darlington
ADE-208-1143 (Z)
1st. Edition
Mar. 2001
Application
• Low frequency power amplifier
• Complementary pair with 2SA1193(K)
Outline
TO-92MOD
2
3
1. Emitter
2. Collector
3. Base
1
3
2
1
2SD1209(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7
V
Collector current
IC
1
A
Collector peak current
iC(peak)
2
A
Collector power dissipation
PC
0.9
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
60
—
—
V
I C = 0.1 mA, IE = 0
Collector cutoff current
I CEO
—
—
100
µA
VCE = 60 V, RBE = ∞
Emitter cutoff current
I EBO
—
—
100
µA
VEB = 7 V, IC = 0
DC current transfer ratio
hFE
4000
—
—
Collector to emitter saturation
voltage
VCE(sat)
—
—
1.5
V
I C = 500 mA, IB = 0.5 mA*1
Base to emitter saturation
voltage
VBE(sat)
—
—
2.0
V
I C = 500 mA, IB = 0.5 mA*1
Note:
2
1. Pulse test
VCE = 3 V, IC = 0.5 A*1
2SD1209(K)
Area of Safe Operation
Maximum Collector Dissipation Curve
10
iC(peak)
1.0
ms
ms
0.5
=1
0.4
2
10
Collector Current IC (A)
0.8
0.2
0
0.1
10
20
50 100
1.0
2
5
Collector to Emitter Voltage VCE (V)
100
150
50
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
Typical Output Characteristics
0.4
Ta = 25°C
Pulse
105
16 14
12
10
8
6
0.3
4
0.2
2 µA
0.1
IB = 0
0
3
4
5
1
2
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio hFE
0.5
Collector Current IC (A)
Ta = 25°C
1 Shot Pulse
5
PW
Collector Power Dissipation PC (W)
1.2
75
25
Ta = –25°C
104
VCE = 3 V
Pulse
103
0.5
0.01 0.02 0.05 0.1 0.2
Collector Current IC (A)
1.0
3
Collector to Emitter Saturation Voltage VCE(sat) (V)
2SD1209(K)
Typical Transfer Characteristics
10
VCE = 3 V
Ta = 25°C
Pulse
Collector Current IC (A)
0.5
0.2
0.1
0.05
0.02
2
5
10
0.2
0.5 1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Saturation Voltage VBE(sat) (V)
0.01
0.1
4
Collector to Emitter Saturation
Voltage vs. Collector Current
10
IC = 1000 IB
Pulse
5
2
Ta = –25°C
1.0
0.5
25
0.2
0.1
0.01 0.02
0.05 0.1 0.2
0.5
Collector Current IC (A)
Base to Emitter Saturation Voltage
vs. Collector Current
10
IC = 1000 IB
Pulse
5
2
Ta = –25°C
1.0
25
75
0.5
0.2
0.1
0.01 0.02
75
0.5
0.05 0.1 0.2
Collector Current IC (A)
1.0
1.0
2SD1209(K)
Package Dimensions
As of January, 2001
Unit: mm
4.8 ± 0.4
2.3 Max
0.65 ± 0.1
0.75 Max
0.7
0.60 Max
0.55Max
10.1 Min
8.0 ± 0.5
3.8 ± 0.4
0.5Max
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-92 Mod
—
Conforms
0.35 g
5
2SD1209(K)
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
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