Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as a general purpose switch for automotive systems and other applications. APPLICATIONS General controller for driving lamps small motors solenoids FEATURES Vertical power DMOS output stage Overload protected up to 85˚C ambient Overload protection by current limiting and overtemperature sensing Latched overload protection reset by input Input clamping suitable for pull-up resistor drive circuit Control of power MOSFET and supply of overload protection circuits derived from input ESD protection on all pins Overvoltage clamping for turn off of inductive loads BUK107-50DS QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT VDS Continuous drain source voltage 50 V ID Continuous drain current 0.7 A PD Total power dissipation 1.8 W Tj Continuous junction temperature 150 ˚C RDS(ON) Drain-source on-state resistance 175 mΩ FUNCTIONAL BLOCK DIAGRAM DRAIN O/V CLAMP POWER INPUT MOSFET RIG LOGIC AND PROTECTION SOURCE Fig.1. Elements of the TOPFET. PINNING - SOT223 PIN PIN CONFIGURATION DESCRIPTION 1 input 2 drain 3 source 4 drain (tab) March 1997 SYMBOL 4 D TOPFET I 2 1 1 3 P S Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET BUK107-50DS LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS ID II IIRM PD Tstg Tj PARAMETER CONDITIONS 1 Continuous drain source voltage Continuous drain current2 Continuous input current Non-repetitive peak input current Total power dissipation Storage temperature Continuous junction temperature clamping tp ≤ 1 ms Tamb = 25 ˚C normal operation3 MIN. MAX. UNIT -55 - 50 self limiting 3 10 1.8 150 150 V A mA mA W ˚C ˚C ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 kΩ MIN. MAX. UNIT - 2 kV OVERVOLTAGE CLAMPING LIMITING VALUES At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL PARAMETER CONDITIONS EDSM Non-repetitive clamping energy EDRM Repetitive clamping energy Tb ≤ 25 ˚C; IDM < ID(lim); inductive load Tb ≤ 75 ˚C; IDM = 50 mA; f = 250 Hz MIN. MAX. UNIT - 100 mJ - 4 mJ OVERLOAD PROTECTION LIMITING VALUES With the protection supply provided via the input pin, TOPFET can protect itself from short circuit loads. Overload protection operates by means of drain current limiting and activating the overtemperature protection. SYMBOL PARAMETER CONDITIONS VDDP Protected drain source supply voltage II = 1.5 mA VIS = 6 V MIN. MAX. UNIT - 35 16 V V OVERLOAD PROTECTION CHARACTERISTICS TOPFET switches off to protect itself when there is an overload fault condition. It remains latched off until reset by the input. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 0.7 1.1 1.5 A 100 130 160 ˚C Overload protection ID(lim) Drain current limiting II = 1.5 mA Tj(TO) Overtemperature protection only in drain current limiting Threshold junction temperature II = 1.5 mA 1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 Refer to OVERLOAD PROTECTION CHARACTERISTICS. 3 Not in an overload condition with drain current limiting. March 1997 2 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET BUK107-50DS THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-sp Rth j-b Rth j-a Thermal resistance Junction to solder point Junction to board1 Junction to ambient CONDITIONS Mounted on any PCB Mounted on PCB of fig. 19 MIN. TYP. MAX. UNIT - 12 40 - 18 70 K/W K/W K/W MIN. TYP. MAX. UNIT 50 - 55 56 70 V V - 0.5 1 10 125 2 20 100 175 µA µA µA mΩ STATIC CHARACTERISTICS Tb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS V(CL)DSS V(CL)DSS Drain-source clamping voltage Drain-source clamping voltage IDSS IDSS IDSS RDS(ON) Off-state drain current Off-state drain current Off-state drain current Drain-source on-state resistance2 VIS = 0 V; ID = 10 mA VIS = 0 V; IDM = 200 mA; tp ≤ 300 µs; δ ≤ 0.01 VDS = 45 V; VIS = 0 V VDS = 50 V; VIS = 0 V VDS = 40 V; VIS = 0 V; Tj = 100 ˚C II = 1.5 mA; IDM = 100 mA; tp ≤ 300 µs; δ ≤ 0.01 INPUT CHARACTERISTICS Tb = 25 ˚C unless otherwise specified. The supply for the logic and overload protection is taken from the input. The input clamping is suitable for a drive circuit with a pull-up resistor. SYMBOL PARAMETER CONDITIONS VIS(TO) IIS IISL Input threshold voltage Input supply current Input supply current VDS = 5 V; ID = 1 mA normal operation; protection latched; VISR V(CL)IS RIG Protection latch reset voltage3 Input clamping voltage Input series resistance II = 1.5 mA to gate of power MOSFET VIS = 6 V VIS = 5 V VIS = 3.5 V MIN. TYP. MAX. UNIT 1.7 1 6 - 2.2 550 500 250 2.2 7.5 33 2.7 750 650 400 3.5 - V µA µA µA V V kΩ SWITCHING CHARACTERISTICS Tamb = 25 ˚C; resistive load RL = 50 Ω; adjust VDD to obtain ID = 250 mA; refer to test circuit and waveforms SYMBOL PARAMETER CONDITIONS td on Turn-on delay time VIS = 0 V to II = 1.5 mA tr Rise time td off Turn-off delay time tf Fall time II = 1.5 mA to VIS = 0 V MIN. TYP. MAX. UNIT - 4 - µs - 16 - µs - 3 - µs - 6 - µs 1 Temperature measured 1.3 mm from tab. 2 Continuous input voltage. The specified pulse width is for the drain current. 3 The input voltage below which the overload protection circuits will be reset. March 1997 3 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET 120 BUK107-50DS Normalised Power Derating PD% a Normalised RDS(ON) = f(Tj) 110 100 90 1.5 80 70 1.0 60 50 40 0.5 30 20 10 0 0 20 40 60 80 100 Tmb / C 120 0 140 Fig.2. Normalised limiting power dissipation. PD% = 100⋅PD/PD(25 ˚C) = f(Tmb) 2.0 ID / A -60 -40 -20 0 20 40 60 Tj / C 80 100 120 140 Fig.5. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 100 mA; II = 1.5 mA BUK107-50DS RDS(ON) / mOhm BUK107-50DS 240 CURRENT LIMITING OCCURS WITHIN THE SHADED REGION 200 1.5 160 1.0 TYP. TYP. 120 80 0.5 40 0 0 20 40 60 80 Tamb / C 100 120 0 140 0 4 6 8 10 VIS / V Fig.3. Continuous drain current. ID = f(Tamb); condition: II = 1.5 mA 1.5 2 ID / A Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(VIS); conditions: ID = 100 mA, tp = 300 µs BUK107-50DS 1.5 ID / A BUK107-50DS VIS / V = 8 1 1 7 6 5 0.5 0.5 0 0 0 4 8 12 16 VDS / V 20 24 28 0 32 4 6 8 10 VIS / V Fig.7. Typical transfer characteristics, Tj = 25 ˚C. ID = f(VIS); conditions: VDS = 10 V, tp = 300 µs Fig.4. Typical on-state characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VIS; tp = 300 µs March 1997 2 4 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET 200 BUK107-50DS Tj(TO) / C VIS(TO) / V BUK107-50DS 180 BUK107-50DS 3 MAX. 160 140 TYP. TYP. 2 120 MIN. 100 1 80 60 0 2 4 6 8 10 0 -50 IIS & IISL / mA BUK107-50DS II / mA 10 BUK107-50DS 9 0.9 8 0.8 LATCHED 0.7 7 6 0.6 5 0.5 NORMAL 0.4 4 IISL RESET 0.3 3 IIS 0.2 2 0.1 1 0 0 0 2 4 VIS / V 6 0 8 IIS / uA 2 4 6 8 10 VIS / V Fig.9. Typical DC input characteristics, Tj = 25 ˚C. IIS & IISL = f(VIS); normal operation & protection latched 500 150 Fig.11. Input threshold voltage. VIS(TO) = f(Tj); conditions: ID = 1 mA; VDS = 5 V Fig.8. Typical overtemperature protection threshold. Tj(TO) = f(VIS); condition: VDS = 10 V 1.0 100 50 Tj / C VIS / V Fig.12. Typical input clamping characteristic. II = f(VIS); normal operation, Tj = 25 ˚C. BUK107-50DS 200 ID / mA BUK107-50DS VIS / V = 400 150 5V 300 TYP. 100 200 4V 50 100 0 0 -50 0 50 Tj / C 100 50 150 54 56 58 60 VDS / V Fig.10. Typical DC input current. IIS = f(Tj); parameter VIS; normal operation March 1997 52 Fig.13. Overvoltage clamping characteristic, 25 ˚C. ID = f(VDS); conditions: VIS = 0 V; tp ≤ 300 µs 5 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET BUK107-50DS VDD 10 uA IDSS BUK107-50DS RL RI 1 uA VDS VIS TOPFET 10 kO measure D 100 nA I D.U.T. P S BC337 10 nA 0 -50 50 Tj / C 0V VIS & VDS / V 150 Fig.16. Typical drain source leakage current IDSS = f(Tj); conditions: VDS = 40 V; VIS = 0 V. Fig.14. Test circuit for resistive load switching times. Select RI to give II = 1.5 mA, ie 3.3 kΩ approx. 15 100 BUK107-50DS VDS 10 VIS 5 0 -10 10 30 50 70 90 time / us Fig.15. Typical switching waveforms, resistive load . RL = 50 Ω; adjust VDD to obtain ID = 250 mA; Tj = 25˚C 1E+02 BUK107-50DS Zth j-amb / (K/W) D= 0.5 0.2 0.1 0.05 1E+01 0.02 1E+00 PD tp D= tp T 1E-01 T t 0 1E-02 1E-07 1E-05 1E-03 1E-01 1E+01 1E+03 t/s Fig.17. Transient thermal impedance, TOPFET mounted on PCB of fig 19. Zth j-amb = f(t); parameter D = tp/T March 1997 6 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET BUK107-50DS MOUNTING INSTRUCTIONS PRINTED CIRCUIT BOARD Dimensions in mm. Dimensions in mm. 3.8 36 min 1.5 min 18 60 1.5 min 4.5 4.6 9 2.3 6.3 10 (3x) 1.5 min 7 4.6 15 50 Fig.19. PCB for thermal resistance and power rating. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick). Fig.18. Soldering pattern for surface mounting. March 1997 7 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET BUK107-50DS MECHANICAL DATA Dimensions in mm Net Mass: 0.11 g 0.95 0.85 handbook, full pagewidth S 0.1 S seating plane 6.7 6.3 0.32 0.24 B 3.1 2.9 0.2 M A 4 A 0.10 0.01 16 o max 16 3.7 3.3 o 1 1.80 max 7.3 6.7 10 o max 2 0.80 0.60 2.3 3 0.1 M B (4x) 4.6 MSA035 - 1 Fig.20. SOT223 surface mounting package1. 1 For further information, refer to surface mounting instructions for SOT223 envelope. Epoxy meets UL94 V0 at 1/8". March 1997 8 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET BUK107-50DS DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1997 9 Rev 1.200