DTA115TH / DTA115TE / DTA115TUA / DTA115TKA / DTA115TSA Transistors Digital transistors (built-in resistor) DTA115TH / DTA115TE / DTA115TUA / DTA115TKA / DTA115TSA !External dimensions (Units : mm) DTA115TH 1.6 0~0.1 0.7 0.12 (1)Emitter (2)Base (3)Collector !Circuit schematic 1.6 (2) 0.2 (3) 1.0 (1) 0.5 0.5 DTA115TE 0.2 ROHM : EMT3H EIAJ : SC-89 0.8 0.1Min. 0.7 0~0.1 0.55 0.15 1.6 C B 1.0 (2) (3) 1.6 (1) 0.5 0.5 0.27 0.85 0.3 !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off conditions need to be set for operation, making device design easy. 4) Higher mounting densities can be achieved. (1)Emitter (2)Base (3)Collector ROHM : EMT3 EIAJ : SC-75A R1 2.0 (1) (2) (3) 0.3 E : Emitter C : Collector B : Base 1.3 DTA115TUA 0.65 0.65 E 1.25 2.1 0.9 0~0.1 0.7 0.15 0.2 Each lead has same dimensions 0.1~0.4 (1)Emitter (2)Base (3)Collector ROHM : UMT3 EIAJ : SC-70 (2) 0.95 0.95 1.9 2.9 (3) 0.4 (1) DTA115TKA 1.6 2.8 1.1 0~0.1 0.8 0.15 Each lead has same dimensions 0.3~0.6 (1)Emitter (2)Base (3)Collector ROHM : SMT3 EIAJ : SC-59 DTA115TSA 2 (15Min.) 3Min. 3 4 0.45 Taping specifications 2.5 0.5 0.45 5 (1)(2)(3) ROHM : SPT EIAJ : SC-72 (1)Emitter (2)Collector (3)Base DTA115TH / DTA115TE / DTA115TUA / DTA115TKA / DTA115TSA Transistors !Absolute maximum ratings (Ta = 25°C) Symbol Limits Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA DTA115TH / DTA115TE Collector power DTA115TUA / DTA115TKA dissipation DTA115TSA PC Parameter 150 mW 200 300 Junction temperature Tj 150 °C Storage temperature Tstg −55 ~ +150 °C !Package, marking, and packaging specifications Part No. DTA115TH DTA115TE DTA115TUA DTA115TKA DTA115TSA SPT Package EMT3H EMT3 UMT3 SMT3 Marking 99 99 99 99 − Packaging code T2L TL T106 T146 TP Basic ordering unit (pieces) 8000 3000 3000 3000 5000 !Electrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO −50 − − V IC=−50µA Collector-emitter breakdown voltage BVCEO −50 − − BVEBO −5 − − V V IC=−1mA Emitter-base breakdown voltage Collector cutoff current ICBO − − −0.5 µA VCB=−50V Emitter cutoff current IEBO − − −0.5 µA VEB=−4V IC/IB=−1mA/−0.1mA Parameter VCE(sat) − − −0.3 hFE 100 250 600 V − Input resistance R1 100 130 kΩ Transition frequency fT 70 − 250 − MHZ Collector-emitter saturation voltage DC current transfer ratio ∗Transition frequency of the device. Conditions IE=−50µA IC=−1mA , VCE=−5V − VCE=−10V , IE=5mA , f=100MHZ ∗