DTC144VUA / DTC144VKA / DTC144VSA Transistors Digital transistor (built-in resistors) DTC144VUA / DTC144VKA / DTC144VSA !External dimensions (Units : mm) 2.0 1.3 (2) (3) 0.3 0.65 0.65 (1) DTC144VUA 1.25 0.9 (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) 0to0.1 ROHM : UMT3 EIAJ : SC-70 0.7 0.15 0.2 2.1 0.1to0.4 Each lead has same dimensions (3) (2) 0.95 0.95 1.9 2.9 (1) DTC144VKA 0.4 !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off conditions need to be set for operation, making device design easy. 4) Higher mounting densities can be achieved. 1.6 ROHM : SMT3 EIAJ : SC-59 OUT 0.8 0to0.1 R1 IN 0.15 !Equivalent circuit 0.3to0.6 1.1 2.8 (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) Each lead has same dimensions R2 DTC144VSA GND 4 2 (15Min.) 3Min. GND OUT 3 IN 0.45 2.5 0.5 0.45 5 ROHM : SPT EIAJ : SC-72 Symbol Limits Unit Type DTC144VUA DTC144VKA DTC144VSA VCC VI 50 −15~+40 V V UMT3 166 SMT3 E66 SPT − IO T106 3000 T146 3000 TP 5000 Tj 30 100 200 300 150 Package Marking Packaging code Basic ordering unit (pieces) Tstg −55~+150 Output curren IC(Max.) DTC144VUA / DTC144VKA Power dissipation DTC144VSA Junction temperature Storage temperature Pd mA mW °C °C !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. VI(off) − IO(off) − 6 − − − 1 − 0.3 0.16 0.5 V mA µA GI 33 − − Input resistance R1 32.9 47 61.1 kΩ Resistance ratio R2/R1 0.17 0.21 − fT − 250 0.26 − Input voltage Output voltage Input current Output current DC current gain Transition frequency ∗ Transition frequency of the device. Taping specifications !Packaging, marking and packaging specifications !Absolute maximum ratings (Ta = 25°C) Parameter Supply voltage Input voltage (1) (2) (3) (1) Emitter (2) Collector (3) Base VI(on) VO(on) II − 0.1 − − − Unit V MHz Conditions VCC=5V , IO=100µA VO=0.3V , IO=2mA IO=10mA , II=0.5mA VI=5V VCC=50V , VI=0V IO=5mA , VO=5V − − VCE=10V , IE=−5mA , f=100MHz ∗