ETC EDI4164MEV50SM

EDI4164MEV-RP
HI-RELIABILITY PRODUCT
4Mx16 EDO (Extended Data Out) Dynamic RAM 3.3V
FEATURES
■ 4 Meg x 16 bit CMOS Dynamic RAM
■ RAS - Only, CAS-before-RAS, and HIDDEN refresh
capability
■ Package:
■ Low Operating Power Dissipation
■ Access Time: 50, 60 and 70ns
■ Low Standby Power
• 50 pin Plastic TSOP
■ Extended Data Out Mode Operation
■ Common I/O
■ Single +3.3V (±0.3V) Supply Operation
■ All Inputs/Outputs TTL Compatible
■ 4096 Cycles Refresh
■ Industrial (-40°C to +85°C) and Military (-55°C to +125°C)
Temperature Ranges
PIN CONFIGURATION
TOP VIEW
V CC
DQ 1
DQ 2
DQ 3
DQ 4
VCC
DQ 5
DQ 6
DQ 7
DQ 8
NC
V CC
WE
RAS
NC
NC
NC
NC
A0
A1
A2
A3
A4
A5
V CC
September 1999 Rev. 2
1
25
PIN DESCRIPTION
50
26
V SS
DQ 16
DQ 15
DQ 14
DQ 13
V SS
DQ 12
DQ 11
DQ 10
DQ 9
NC
V SS
LCAS
UCAS
OE
NC
NC
NC
A 11
A 10
A9
A8
A7
A6
V SS
1
A0-11
Address Inputs
LCAS /
UCAS
Column Address
Strobes
RAS
Row Address Strobe
WE
Write Enable Input
OE
Output Enable
DQ1-16
Data Inputs/Outputs
VCC
Power (+3.3V±0.3V)
VSS
Ground
NC
No Connection
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EDI4164MEV-RP
BLOCK DIAGRAM
RAS
LCAS
UCAS
CAS
Control
Clocks
WE
Data in
Buffer
Refresh Timer
Refresh Control
Memory Array
4096 x 1024 x 16
Cells
Refresh Counter
Row Address Buffer
A0-A11
Sense Amps & IO
Row Decoder
DQ1
to
DQ16
Column Decoder
Col. Address Buffer
Data Out
Buffer
OE
ABSOLUTE MAXIMUM RATINGS*
Voltage on any pin relative to VSS
Operating Temperature (Industrial)
Operating Temperature (Military)
Storage Temperature
Power Dissipation
Output Current
RECOMMENDED DC OPERATING CONDITIONS(1)
Parameter
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
-0.5V to 4.6V
-40°C to +85°C
-55°C to +125°C
-55°C to +150°C
1 Watt
50 mA
Min
3.0
0
2
-0.3
NOTES:
1. All voltage values are with respect to VSS.
*Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions greater than those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
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Sym
VCC
VSS
VIH
VIL
2
Typ
3.3
0
---
Max Units
3.6
V
0
V
Vcc +0.3 V
0.8
V
EDI4164MEV-RP
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Conditions
Operating Current
ICC1
Standby Current
Min
Typ
Max
Units
RAS and UCAS, LCAS,
Address cycling @TRC = min.
180
mA
ICC2
RAS = UCAS = LCAS = WE = VIH
4
mA
RAS-only-Refresh Current
ICC3
UCAS = LCAS = VIH, RAS, Addressing
cycling @ TRC = min
180
mA
EDO Mode Current
ICC4
RAS = VIL, UCAS or LCAS
Addressing cycling @ TRC = min.
165
mA
Standby Current
ICC5
RAS = UCAS = LCAS = WE = VCC -0.2V
2
mA
CAS-before-RAS Refresh Current
ICC6
RAS and UCAS or LCAS cycling @ TRC=min.
180
mA
IIL
0V ≤ VIN ≤ Vcc +0.3V
All Other Input Pins = 0V
5
µA
Output Leakage Current
IOL
0V ≤ VOUT ≤ Vcc
-5
5
µA
Output High Voltage
VOH
IOH = -2.0mA
2.4
—
—
V
Output Low Voltage
VOL
IOL = 2.0mA
—
—
0.4
V
Input Leakage Current
-5
NOTES:
3. ICC1(av), ICC3(av), ICC4(av), and ICC6 are dependent on cycle rate. Maximum current is measured at the fastest cycle rate.
4. ICC1(av) and ICC4(av) are dependent on output loading. Specified values are obtained with the output open.
TRUTH TABLE
CAPACITANCE
(f = 1.0MHz, TA = 25°C, VCC = 3.3V)
Parameter
Symbol
Max
Unit
Address Input Capacitance
CIN1
5
pF
Input Capacitance (CAS, WE, RAS)
CIN2
7
pF
Output Capacitance (Q)
CDQ
7
pF
RAS
H
L
L
L
L
L
L
L
L
3
LCAS
X
H
L
H
L
L
H
L
L
UCAS
X
H
H
L
L
H
L
L
L
WE
X
X
H
H
H
L
L
L
H
OE
X
X
L
L
L
H
H
H
H
DQ1-8
High Z
High Z
DQ Out
High Z
DQ Out
DQ In
—
DQ In
High Z
DQ9-16
High Z
High Z
High Z
DQ Out
DQ Out
—
DQ In
DQ In
High Z
STATE
Standby
Refresh
Byte Read
Byte Read
Word Read
Byte Write
Byte Write
Word Write
—
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EDI4164MEV-RP
TIMING REQUIREMENTS — READ, WRITE, READ-MODIFY-WRITE, REFRESH, AND PAGE MODE CYCLES
(VCC=3.3V±0.3V)Notes1,2,5
50ns
Parameter
Random Read or Write Cycle Time
Read-Modify-Write CycleTime
Access Time from CAS
Access Time from RAS
Access Time From Column Address
CAS to output in Low-Z
Output buffer turn-off delay
Transition Time
RAS Precharge Time
RAS Low Pulse Width
RAS Hold Time after CAS Low
CAS Hold Time after RAS Low
CAS Low Pulse Width
RAS to CAS Delay Time
Column Address Delay from RAS Low
Delay CAS High to RAS Low
Row Address Set Up Time
Row Address Hold Time
Column Address Set Up Time
Column Address Hold Time
Column Address Hold Time Referenced RAS
Column Address to RAS Setup
Read Set Up Time before CAS Low
Read Hold Time after CAS High
Read Hold Time after RAS High
Write Hold Time after CAS Low
Write Command Hold Time Referenced to RAS
Write Pulse Width
RAS Hold Time after Write Low
CAS Hold Time after Write Low
Data Set up Time
Data Hold Time after CAS Low
Data Hold Time Referenced to RAS
Refresh Cycle (Industrial)
Refresh Cycle (Military)
Write Setup Time before CAS Low
CAS Low to WE Low Delay
RAS Low to WE Low Delay
Column Address Setup to CAS High
OE Low to Output Valid
CAS Low to DOUT
RAS Low to WE Low
Write High to RAS Low
Address to WE Low Delay
Symbol
tRC
tRWC
tCAC
tRAC
tAA
tCLZ
tOFF
tT
tRP
tRAS
tRSH
tCSH
tCAS
tRCD
tRAD
tCRP
tASR
tRAH
tASC
tCAH
tAR
tRAL
tRCS
tRCH
tRRH
tWCH
tWCR
tWP
tRWL
tCWL
tDS
tDH
tDHR
tREF
tREF
tWCS
tCWD
tRWD
tACH
tOE
tCOH
tWRH
tWRP
tAWD
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Min
90
126
60ns
Max
Min
110
150
13
50
25
0
0
2
30
50
13
38
8
11
9
5
0
9
0
8
40
25
0
0
0
8
40
7
13
8
0
8
40
13
50
10,000
10,000
37
25
0
0
2
40
60
15
45
10
14
12
5
0
10
0
10
45
30
0
0
0
10
45
10
15
10
0
10
45
15
50
10,000
10,000
45
30
13
4
0
0
2
50
70
20
50
15
20
15
5
0
10
0
15
55
35
0
0
0
15
55
15
20
15
0
15
55
20
50
10,000
10,000
50
35
32
16
0
45
94
15
15
3
10
10
55
Max
20
70
35
32
16
0
35
79
15
3
10
10
48
Min
130
180
15
60
30
32
16
0
30
67
15
70ns
Max
20
3
10
10
65
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
3,4,5
3,4,10
3,10
6
6,14
2
4
10
8
8
9
9
7
7
7
13
7
EDI4164MEV-RP
WRITE CYCLE, EARLY AND DELAYED WRITE
(VCC=3.3V±0.3V)Notes1,2,5
50ns
Parameter
CAS Setup for CAS before RAS Refresh
CAS Hold for CAS before RAS Refresh
Precharge to CAS Active
Access Time from CAS Precharge
EDO Page Cycle Time
EDO Page Read-Modify-Write Cycle Time
CAS precharge time (EDO cycle)
RAS pulse width (EDO Cycle)
Output Disable Time after OE High
Write Low to Next OE Low
OE Low to CAS High Setup Time
OE High Hold From CAS High
OE High Pulse Width
OE Setup prior to RAS during
Hidden Refresh Cycle
OE delay from WE
WE pulse to disable at CAS high
Symbol
tCSR
tCHR
tRPC
tCPA
tPC
tPRWC
tCP
tRASP
tOD
tOEH
tOES
tOEHC
tOEP
tORD
Min
5
10
5
tWHZ
tWPZ
0
10
60ns
Max
Min
5
10
5
28
20
47
8
50
0
8
4
5
7
0
125K
13
10
Max
Min
5
15
5
35
25
56
10
60
0
10
5
10
10
0
0
10
125K
15
13
70ns
Max
40
30
71
10
70
0
12
5
10
10
0
0
10
125K
20
15
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
3
6
ns
ns
NOTES:
1. An initial pause of 200µs is required after power-up followed by any 8 ROR or CBR cycles before proper device operation is achieved, and must be repeated
whenever tREF is exceeded.
2. VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between VIH (min) and VIL (max) and are
assumed to be 3ns for all inputs.
3. Measured with a load equivalent to 1 TTL load and 100pF.
4. Operation within the tRCD (max) limit insures that tRAC (max) can be met. tRCD (max) is specified as a reference point only. If tRCD is greater than the specified
tRCD (max) limit, then access time is controlled exclusively by tCAC.
5. Assumes that tRCD ≥ tRCD (max)
6. This parameter defines the time at which the output achieves the open circuit condition and is not referenced to VOH or VOL.
7. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameters. They are included in the data sheet as electric characteristics only. If tWCS ≥ tWCS (min), the
cycle is an early write and the data output will remain high impedance for the duration of the cycle. If tCWD ≥ tCWD (min), tRWD > tRWD (min) and tAWD > tAWD
(min) then the cycle is a read-modify-write cycle and the data output will contain the data read from the selected address. If neither of the above conditions is
satisfied, the condition of the data out is indeterminate.
8. Either tRCH or tRRH must be satisfied for a read cycle.
9. These parameters are referenced to the CAS leading edge in early write cycles and to the WE falling edge in OE controlled write cycle and read-modify-write
cycles.
10.Operation within the tRAD (max) limit insures that tRAC (max) can be met. tRAD (max) is specified as a reference point only. If tRAD is greater than the specified
tRAD (max) limit, then access time is controlled by tAA.
5
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EDI4164MEV-RP
READ CYCLE
t RC
t RAS
t RP
VIH
RAS
VIL
t CSH
t CRP
CAS
t RSH
t CAS
t RCD
t RRH
VIH
VIL
t RAD
t RAD
t ASR
A0-A11
t ASC
t ACH
t CAH
VIH
VIL
ROW
t WRP
WE
t RAL
t RAH
COLUMN
t WRH
ROW
t RCH
t RCS
VIH
VIL
NOTE 1
t AA
t RAC
NOTE 2
t CAC
t CLZ
DQ
t OFF
VOH
VOL
VALID DATA
OPEN
t OE
OPEN
t OD
VIH
OE
VIL
DON'T CARE
UNDEFINED
NOTES :
1. Although WE is a "don't care" at RAS time during an access cycle (Read or Write), the system designer should implement WE high for tWRP and tWRH.
2. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last.
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6
EDI4164MEV-RP
WRITE CYCLE, EARLY WRITE
t RC
t RAS
t RP
VIH
RAS
VIL
t CSH
t CRP
CAS
t RSH
t CAS
t RCD
VIH
VIL
t AR
t RAD
t ASR
t RAH
t RAL
t CAH
t ASC
t ACH
A0-A11
VIH
ROW
VIL
COLUMN
ROW
t CWL
t RWL
t WCR
t WRP
WE
t WCS
t WRH
t WCH
t WP
VIH
VIL
NOTE 1
t DHR
t DS
DQ
t DH
VOH
VALID DATA
VOL
VIH
OE
VIL
DON'T CARE
UNDEFINED
READ WRITE CYCLE
(Late Write and Read-Modify-Write Cycles)
t RWC
t RAS
t RP
VIH
RAS
VIL
t CSH
CAS
t RSH
t CAS
t RCD
t CRP
VIH
VIL
t AR
t RAD
t ASR
t RAL
t ACH
t RAH
t ASC
A0-A11
t CAH
VIH
ROW
VIL
COLUMN
ROW
t RWD
t CWD
t RCS
t WRP
WE
t CWL
t RWL
t WRH
t AWD
t WP
VIH
VIL
t AA
NOTE 1
t RAC
t CAC
t DS
t CLZ
DQ
VOH
VALID DOUT
OPEN
t DH
VALID DIN
OPEN
VOL
t OE
t OD
t OEH
VIH
OE
VIL
DON'T CARE
UNDEFINED
7
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EDI4164MEV-RP
EDO-PAGE-MODE READ CYCLE
t RASP
t RP
VIH
RAS
VIL
t CSH
t CRP
CAS
t PC
t RCD
t CAS
t RSH
t CP
t CAS
t CP
t CAS
t CP
VIH
VIL
t AR
t RAD
t ASR
t ACH
t CAH
t ASC
t RAH
t ACH
t CAH
t ASC
t ASC
t RAL
t ACH
t CAH
VIH
A0-A11
ROW
VIL
COLUMN
COLUMN
COLUMN
ROW
t CWL
t WRP
t WRH
t RCH
t RCS
VIH
WE
VIL
NOTE 1
t AA
t AA
t RAC
t CAC
t CAC
VOH
t CAC
t CLZ
VALID
DATA
VALID DATA
OPEN
t OFF
t OEHC
t COH
VOL
VALID DATA
t OD
t OE
t OES
VIH
OE
t CPA
t CPA
t CLZ
DQ
t RRH
t AA
OPEN
t OD
t OE
t OES
VIL
t OEP
DON'T CARE
UNDEFINED
EDO-PAGE-MODE EARLY WRITE CYCLE
t RASP
t RP
VIH
RAS
VIL
t CSH
t CRP
CAS
t PC
t RCD
t CAS
t RSH
t CP
t CAS
t CP
t CAS
t CP
VIH
VIL
t AR
t RAD
t ASR
A0-A11
t ACH
t CAH
t ASC
t ACH
t CAH
t ASC
t ACH
t RAL
t CAH
VIH
VIL
ROW
t WRP
WE
t ASC
t RAH
t WRH
COLUMN
t WCS
t WP
COLUMN
t CWL
t WCH
t WCS
t WP
t CWL
t WCH
COLUMN
t WCS
t WP
ROW
t CWL
t WCH
VIH
VIL
NOTE 1
t WCR
t DHR
t RWL
t DS
DQ
VOH
VOL
OE
VIH
VIL
t DH
VALID DATA
t DS
t DH
VALID DATA
t DS
t DH
VALID DATA
DON'T CARE
UNDEFINED
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8
EDI4164MEV-RP
EDO-PAGE-MODE READ-WRITE CYCLE
t RASP
t RP
VIH
RAS
VIL
t CSH
t CRP
CAS
t RCD
t PC / t PRWC NOTE 1
t CP
t CAS
t CAS
t RSH
t CAS
t CP
t CP
VIH
VIL
t AR
t RAD
t RAH
t ASR
A0-A11
t RAL
t ASC
t ASC
t CAH
t CAH
t ASC
t CAH
VIH
ROW
VIL
COLUMN
COLUMN
COLUMN
ROW
t RWD
t RCS
t CWL
t WP
t AWD
t WRP t WRH
WE
t RWL
t CWL
t WP
t AWD
t CWD
t CWD
VIH
VIL
NOTE 2
t AA
t AA
t DH
t CPA
t DS
t CAC
t DS
t CAC
t CLZ
t CLZ
VALID
DOUT
OPEN
VOL
t DH
t CPA
t DS
t CAC
t CLZ
VOH
t AA
t DH
t RAC
DQ
t CWL
t WP
t AWD
t CWD
VALID
DIN
VALID
DOUT
t OD
VALID
DIN
VALID
DOUT
VALID
DIN
t OD
t OE
t OE
OPEN
t OD
t OEH
t OE
VIH
OE
VIL
DON'T CARE
UNDEFINED
NOTE: 1. TPC is for Late Write Cycles Only
EDO-PAGE-MODE READ-EARLY-WRITE CYCLE
t RASP
t RP
VIH
RAS
VIL
t CSH
t CRP
CAS
t RCD
t CAS
t PC
t CP
t RSH
t CAS
t PC
t CAS
t CP
t CP
VIH
VIL
t AR
t ASR
A0-A11
t RAD
t RAH
t CAH
t ASC
VIL
ROW
COLUMN (A)
t ASC
COLUMN (B)
t CAH
COLUMN (N)
t RCH
t RCS
t CWS
ROW
t WCH
VIH
VIL
t AA
NOTE 1
t AA
t CPA
t RAC
t CAC
t COH
t CAC
DQ
t CAH
VIH
t WRP t WRH
WE
t RAL
t ACH
t ASC
VOH
VOL
OPEN
VALID DATA (A)
t DS
t DH
t WHZ
VALID DATA (B)
VALID
DATA IN
t OE
VIH
OE
VIL
DON'T CARE
UNDEFINED
9
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EDI4164MEV-RP
READ CYCLE WITH WE CONTROLLED DISABLE
VIH
RAS
VIL
t CSH
t CRP
CAS
t RCD
t CAS
t CP
VIH
VIL
t AR
t RAD
t ASR
A0-A11
t RAH
ROW
VIL
t WRP
WE
t ASC
t CAH
t ASC
VIH
COLUMN
t WRH
COLUMN
t RCS
t RCH
t WPZ
t RCS
VIH
VIL
NOTE 1
t AA
t RAC
t CAC
t CLZ
DQ
t CLZ
t WHZ
VOH
VALID DATA
OPEN
VOL
t OE
OPEN
t OD
VIH
OE
VIL
DON'T CARE
UNDEFINED
RAS - ONLY REFRESH CYCLE
(WE and OE=Don't Care)
t RC
t RP
t RAS
VIH
RAS
VIL
t RPC
t CRP
CAS
VIH
VIL
t ASR
A0-A11
DQ
t RAH
VIH
ROW
VIL
ROW
VOH
OPEN
VOL
t WRP
t WRH
t WRP
t WRH
VIH
WE
VIL
NOTE 1
DON'T CARE
UNDEFINED
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10
EDI4164MEV-RP
CBR REFRESH CYCLE
(A0-A11 and OE=Don't Care)
t RP
t RP
t RAS
t RAS
VIH
RAS
VIL
t RPC
t CP
t CSR
t RPC
t CHR
t CSR
t CHR
VIH
CAS
VIL
DQ
VOH
OPEN
VOL
t WRP
t WRH
t WRP
t WRH
VIH
WE
NOTE 1
VIL
DON'T CARE
UNDEFINED
HIDDEN REFRESH CYCLE
(WE=High, OE=Low) NOTE 1
t RC
VIH
RAS
t RAS
t CRP
CAS
t RP
t RAS
VIL
t RCD
t RSH
t CHR
VIH
VIL
t AR
t RAD
t ASR
A0-A11
t RAH
t ASC
t CAH
VIH
VIL
ROW
COLUMN
t AA
t RAC
t CAC
t CLZ
DQ
t OFF
VOH
VOL
VALID DATA
OPEN
t ORD
VIH
OE
OPEN
t OD
t OE
VIL
DON'T CARE
UNDEFINED
NOTE: 1. A hidden Refresh may also be performed after a Write Cycle. In this case, WE = Low and OE = High
11
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EDI4164MEV-RP
PACKAGE DESCRIPTION
50 PIN PLASTIC TSOP
PACKAGE NO. 372
0.830
0.820
0.471
0.455
0.405
0.395
SEE DETAIL A
0.008
0.005
0.032
TYP
0.018
0.012
0.047
MAX
0.006
0.002
0.024
0.016
DETAIL A
ALL DIMENSIONS ARE IN INCHES
ORDERING INFORMATION
MILITARY (-55 °C TO +125 °C)
Part No.
EDI4164MEV50SM
EDI4164MEV60SM
EDI4164MEV70SM
INDUSTRIAL (-40 °C TO +85 °C)
Speed (ns)
Package No.
50
60
70
372
372
372
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Part No.
EDI4164MEV50SI
EDI4164MEV60SI
EDI4164MEV70SI
12
Speed (ns)
Package No.
50
60
70
372
372
372