4 MEG x 4 EDO DRAM TECHNOLOGY, INC. MT4LC4M4E8, MT4C4M4E8 MT4LC4M4E9, MT4C4M4E9 DRAM FEATURES PIN ASSIGNMENT (Top View) • Industry-standard x4 pinout, timing, functions and packages • State-of-the-art, high-performance, low-power CMOS silicon-gate process • Single power supply (+3.3V ±0.3V or +5V ±10%) • All inputs, outputs and clocks are TTL-compatible • Refresh modes: RAS#-ONLY, HIDDEN and CAS#BEFORE-RAS# (CBR) • Optional Self Refresh (S) for low-power data retention • 11 row, 11 column addresses (2K refresh) or 12 row, 10 column addresses (4K refresh) • Extended Data-Out (EDO) PAGE MODE access cycle • 5V-tolerant inputs and I/Os on 3.3V devices OPTIONS 24/26-Pin TSOP (DB-2) 24/26-Pin SOJ (DA-2) VCC DQ1 DQ2 WE# RAS# *NC/A11 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 26 25 24 23 22 21 VSS DQ4 DQ3 CAS# OE# A9 8 9 10 11 12 13 19 18 17 16 15 14 A8 A7 A6 A5 A4 VSS VCC DQ1 DQ2 WE# RAS# *NC/A11 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 26 25 24 23 22 21 VSS DQ4 DQ3 CAS# OE# A9 8 9 10 11 12 13 19 18 17 16 15 14 A8 A7 A6 A5 A4 VSS MARKING • Voltages 3.3V 5V * NC on 2K refresh and A11 on 4K refresh options. Note: The “#” symbol indicates signal is active LOW. LC C 4 MEG x 4 EDO DRAM PART NUMBERS • Refresh Addressing 2,048 (i.e. 2K) Rows 4,096 (i.e. 4K) Rows E8 E9 • Packages Plastic SOJ (300 mil) Plastic TSOP (300 mil) DJ TG • Timing 50ns access 60ns access -5 -6 • Refresh Rates Standard Refresh Self Refresh (128ms period) PART NUMBER MT4LC4M4E8DJ MT4LC4M4E8DJS MT4LC4M4E8TG MT4LC4M4E8TGS MT4LC4M4E9DJ MT4LC4M4E9DJS MT4LC4M4E9TG MT4LC4M4E9TGS MT4C4M4E8DJ MT4C4M4E8DJS MT4C4M4E8TG MT4C4M4E8TGS MT4C4M4E9DJ MT4C4M4E9DJS MT4C4M4E9TG MT4C4M4E9TGS None S • Part Number Example: MT4LC4M4E8DJ-6 Note: The 4 Meg x 4 EDO DRAM base number differentiates the offerings in two places - MT4LC4M4E8. The third field distinguishes the low voltage offering: LC designates VCC = 3.3V and C designates VCC = 5V. The fifth field distinguishes various options: E8 designates a 2K refresh and E9 designates a 4K refresh for EDO DRAMs. Vcc 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 5V 5V 5V 5V 5V 5V 5V 5V REFRESH 2K 2K 2K 2K 4K 4K 4K 4K 2K 2K 2K 2K 4K 4K 4K 4K PACKAGE SOJ SOJ TSOP TSOP SOJ SOJ TSOP TSOP SOJ SOJ TSOP TSOP SOJ SOJ TSOP TSOP REFRESH Standard Self Standard Self Standard Self Standard Self Standard Self Standard Self Standard Self Standard Self KEY TIMING PARAMETERS SPEED -5 -6 tRC tRAC tPC tAA t CAC tCAS 84ns 104ns 50ns 60ns 20ns 25ns 25ns 30ns 13ns 15ns 8ns 10ns 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 GENERAL DESCRIPTION The 4 Meg x 4 DRAM is a randomly accessed, solid-state memory containing 16,777,216 bits organized in a x4 configuration. RAS# is used to latch the row address (first 11 bits for 2K and first 12 bits for 4K). Once the page has been opened by RAS#, CAS# is used to latch the column address 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. GENERAL DESCRIPTION (continued) (the latter 11 bits for 2K and the latter 10 bits for 4K, address pins A10 and A11 are “don’t care”). READ and WRITE cycles are selected with the WE# input. A logic HIGH on WE# dictates READ mode, while a logic LOW on WE# dictates WRITE mode. During a WRITE cycle, data-in (D) is latched by the falling edge of WE# or CAS#, whichever occurs last. An EARLY WRITE occurs when WE# is taken LOW prior to CAS# falling. A LATE WRITE or READ-MODIFY-WRITE occurs when WE# falls after CAS# is taken LOW. During EARLY WRITE cycles, the data outputs (Q) will remain High-Z regardless of the state of OE#. During LATE WRITE or READ-MODIFYWRITE cycles, OE# must be taken HIGH to disable the data outputs prior to applying input data. If a LATE WRITE or READ-MODIFY-WRITE is attempted while keeping OE# LOW, no write will occur, and the data outputs will drive read data from the accessed location. The four data inputs and the four data outputs are routed through four pins using common I/O, and pin direction is controlled by WE# and OE#. with a row address strobed-in by RAS#, followed by a column address strobed-in by CAS#. CAS# may be toggled-in by holding RAS# LOW and strobing-in different column addresses, thus executing faster memory cycles. Returning RAS# HIGH terminates the PAGE MODE of operation, i.e., closes the page. EDO PAGE MODE The 4 Meg x 4 EDO DRAM provides EDO PAGE MODE, which is an accelerated FAST PAGE MODE cycle. The primary advantage of EDO is the availability of data-out even after CAS# returns HIGH. EDO allows CAS# precharge time (tCP) to occur without the output data going invalid. This elimination of CAS# output control allows pipeline READs. FAST PAGE MODE DRAMs have traditionally turned the output buffers off (High-Z) with the rising edge of CAS#. EDO PAGE MODE DRAMs operate like FAST PAGE MODE DRAMs, except data will remain valid or become valid after CAS# goes HIGH during READs, provided RAS# and OE# are held LOW. If OE# is pulsed while RAS# and CAS# are LOW, data will toggle from valid data to High-Z and back to the same valid data. If OE# is toggled or pulsed after CAS# goes HIGH while RAS# remains LOW, data will transition to and remain High-Z (refer to PAGE ACCESS PAGE operations allow faster data operations (READ, WRITE or READ-MODIFY-WRITE) within a row addressdefined page boundary. The PAGE cycle is always initiated RAS# V IH V IL ,, ,,, ,,,,,, ,,,,, ,,,,,, ,,,, , , , , CAS# ADDR V IH V IL V IH V IL DQ V IOH V IOL ROW COLUMN (A) OPEN COLUMN (B) ,, VALID DATA (A) VALID DATA (A) t OD OE# V IH V IL COLUMN (C) ,,, ,, VALID DATA (C) VALID DATA (B) t OD t OES COLUMN (D) t OEHC t OE t OEP The DQs go back to Low-Z if tOES is met. The DQs remain High-Z until the next CAS# cycle if tOEHC is met. , VALID DATA (D) t OD , ,,, The DQs remain High-Z until the next CAS# cycle if tOEP is met. DON’T CARE ,, UNDEFINED Figure 1 OE# CONTROL OF DQs 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. fresh cycle and holding RAS# LOW for the specified tRASS. Additionally, the “S” option allows for an extended refresh period of 128ms, or 31.25µs per row for a 4K refresh and 62.5µs per row for a 2K refresh if using distributed CBR Refresh. This refresh rate can be applied during normal operation, as well as during a standby or BATTERY BACKUP mode. The Self Refresh mode is terminated by driving RAS# HIGH for a minimum time of tRPS. This delay allows for the completion of any internal refresh cycles that may be in process at the time of the RAS# LOW-to-HIGH transition. If the DRAM controller uses a distributed refresh sequence, a burst refresh is not required upon exiting Self Refresh. However, if the DRAM controller utilizes a RAS#- ONLY or burst refresh sequence, all rows must be refreshed within the average internal refresh rate, prior to the resumption of normal operation. Figure 1). WE# can also perform the function of disabling the output devices under certain conditions, as shown in Figure 2. During an application, if the DQ outputs are wire OR’d, OE# must be used to disable idle banks of DRAMs. Alternatively, pulsing WE# to the idle banks during CAS# high time will also High-Z the outputs. Independent of OE# control, the outputs will disable after tOFF, which is referenced from the rising edge of RAS# or CAS#, whichever occurs last. REFRESH Preserve correct memory cell data by maintaining power and executing any RAS# cycle (READ, WRITE) or RAS# refresh cycle (RAS#-ONLY, CBR or HIDDEN) so that all combinations of RAS# addresses (2,048 for 2K and 4,096 for 4K) are executed within tREF (MAX), regardless of sequence. The CBR and Self Refresh cycles will invoke the internal refresh counter for automatic RAS# addressing. An optional Self Refresh mode is also available on the S version. The “S” option allows the user the choice of a fully static, low-power data retention mode or a dynamic refresh mode at the extended refresh period of 128ms. The optional Self Refresh feature is initiated by performing a CBR Re- STANDBY Returning RAS# and CAS# HIGH terminates a memory cycle and decreases chip current to a reduced standby level. The chip is preconditioned for the next cycle during the RAS# HIGH time. ,, ,,, ,,,,,,, ,,,,, ,,,,, , , , ,, , ,, RAS# V IH V IL CAS# V IH V IL ADDR V IH V IL DQ V IOH V IOL WE# V IH V IL OE# V IH V IL ROW COLUMN (A) OPEN COLUMN (B) ,, COLUMN (C) , VALID DATA (A) t WHZ t WPZ The DQs go to High-Z if WE# falls and, if tWPZ is met, will remain High-Z until CAS# goes LOW with WE# HIGH (i.e., until a READ cycle is initiated). VALID DATA (B) COLUMN (D) ,, INPUT DATA (C) t WHZ ,, ,, ,,, WE# may be used to disable the DQs to prepare for input data in an EARLY WRITE cycle. The DQs will remain High-Z until CAS# goes LOW with WE# HIGH (i.e., until a READ cycle is initiated). DON’T CARE UNDEFINED Figure 2 WE# CONTROL OF DQs 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 3 Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. FUNCTIONAL BLOCK DIAGRAM - 2K REFRESH WE# CAS# NO. 2 CLOCK GENERATOR DATA-IN BUFFER 4 DATA-OUT BUFFER 4 DQ1 DQ2 DQ3 DQ4 4 OE# 11 COLUMN ADDRESS BUFFER(11) 10 COLUMN DECODER 1 1024 REFRESH CONTROLLER 4 SENSE AMPLIFIERS I/O GATING 1024 11 2048 2048 ROW TRANSFER ROW TRANSFER (1 OF 2) (1 OF 2) 11 ROW ADDRESS BUFFERS (11) 2048 2048 2048 ROW SELECT (2 of 4096) 11 COMPLEMENT SELECT REFRESH COUNTER ROW DECODER A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 4096 x 1024 x 4 MEMORY ARRAY NO. 1 CLOCK GENERATOR RAS# VDD VSS FUNCTIONAL BLOCK DIAGRAM - 4K REFRESH WE# CAS# NO. 2 CLOCK GENERATOR DATA-IN BUFFER 4 DATA-OUT BUFFER 4 DQ1 DQ2 DQ3 DQ4 4 OE# RAS# 10 COLUMN ADDRESS BUFFER(10) COLUMN DECODER 10 1024 REFRESH CONTROLLER 4 SENSE AMPLIFIERS I/O GATING 1024 12 12 4096 NO. 1 CLOCK GENERATOR 4096 4096 ROW SELECT (1 of 4096) 12 ROW ADDRESS BUFFERS (12) COMPLEMENT SELECT REFRESH COUNTER ROW DECODER A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 4096 x 1024 x 4 MEMORY ARRAY VDD VSS 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 4 Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. TRUTH TABLE ADDRESSES DATA-IN/OUT RAS# CAS# WE# OE# tR Standby H H→X X X X X High-Z READ L L H L ROW COL Data-Out EARLY WRITE L L L X ROW COL Data-In FUNCTION READ WRITE tC DQ1-DQ4 L L H→L L→H ROW COL Data-Out, Data-In EDO-PAGE-MODE 1st Cycle L H→L H L ROW COL Data-Out READ 2nd Cycle L H→L H L n/a COL Data-Out EDO-PAGE-MODE 1st Cycle L H→L L X ROW COL Data-In EARLY WRITE 2nd Cycle L H→L L X n/a COL Data-In Any Cycle L L→H H L n/a n/a Data-Out EDO-PAGE-MODE 1st Cycle L H→L H→L L→H ROW COL Data-Out, Data-In READ-WRITE 2nd Cycle L H→L H→L L→H n/a COL Data-Out, Data-In HIDDEN READ L→H→L L H L ROW COL Data-Out REFRESH WRITE L→H→L L L X ROW COL Data-In L H X X ROW n/a High-Z CBR REFRESH H→L L H X X X High-Z SELF REFRESH H→L L H X X X High-Z RAS#-ONLY REFRESH 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 5 Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ABSOLUTE MAXIMUM RATINGS* Voltage on VCC Pin Relative to VSS: 3.3V ................................................................ -1V to +4.6V 5V ...................................................................... -1V to +7V Voltage on NC, Inputs or I/O Pins Relative to VSS: 3.3V ................................................................ -1V to +5.5V 5V ...................................................................... -1V to +7V Operating Temperature, TA (ambient) .......... 0°C to +70°C Storage Temperature (plastic) .................... -55°C to +150°C Power Dissipation ............................................................. 1W Short Circuit Output Current ..................................... 50mA DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (Notes: 1) 3.3V PARAMETER/CONDITION 5V SYMBOL MIN MAX MIN MAX UNITS Supply Voltage VCC 3.0 3.6 4.5 5.5 V Input High Voltage: Valid Logic 1; all inputs, I/Os and any NC VIH 2.0 5.5 2.4 VCC +1 V Input Low Voltage: Valid Logic 0; all inputs, I/Os and any NC VIL -1.0 0.8 -0.5 0.8 V II -2 2 -2 2 µA Output High Voltage: IOUT = -2mA (3.3V), -5mA (5V) VOH 2.4 - 2.4 - V Output Low Voltage: IOUT = 2mA (3.3V), 4.2mA (5V) VOL - 0.4 - 0.4 V IOZ -5 5 -5 5 µA Input Leakage Current: Any input at VIN (0V ≤ VIN ≤ VIH [MAX]); all other pins not under test = 0V Output Leakage Current: Any output at VOUT (0V ≤ VOUT ≤ 5.5V); DQ is disabled and in High-Z state 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 6 NOTES 4 Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. Icc OPERATING CONDITIONS AND MAXIMUM LIMITS (Notes: 1, 2, 3) 3.3V 5V 2K 4K 2K 4K SPEED Refresh Refresh Refresh Refresh UNITS PARAMETER/CONDITION SYM STANDBY CURRENT: TTL (RAS# = CAS# = VIH) ICC1 ALL 1 1 1 1 mA STANDBY CURRENT: CMOS (non-S version only) (RAS# = CAS# = other inputs = VCC -0.2V) ICC2 ALL 500 500 500 500 µA STANDBY CURRENT: CMOS (S version only) (RAS# = CAS# = other inputs = VCC -0.2V) ICC2 ALL 150 150 150 150 µA OPERATING CURRENT: Random READ/WRITE Average power supply current (RAS#, CAS#, address cycling: tRC = tRC [MIN]) -5 -6 110 100 90 80 140 130 120 110 mA 5, 6 ICC3 OPERATING CURRENT: EDO PAGE MODE Average power supply current (RAS# = VIL, CAS#, address cycling: tPC = tPC [MIN]) -5 -6 110 100 100 90 110 100 100 90 mA 5, 6 ICC4 REFRESH CURRENT: RAS#-ONLY Average power supply current (RAS# cycling, CAS# = VIH: tRC = tRC [MIN]) -5 -6 110 100 90 80 140 130 120 110 mA 5, 6 ICC5 REFRESH CURRENT: CBR Average power supply current (RAS#, CAS#, address cycling: tRC = tRC [MIN]) -5 -6 110 100 90 80 140 130 120 110 mA 5, 7 ICC6 REFRESH CURRENT: Extended (S version only) Average power supply current: CAS# = 0.2V or CBR cycling; RAS# = tRAS (MIN); WE# = VCC -0.2V; A0-A11,OE# and DIN = VCC -0.2V or 0.2V (DIN may be left open) ALL 300 300 300 300 µA 5, 7 ICC7 tRC 62.5 31.25 62.5 31.25 µs 25 REFRESH CURRENT: Self (S version only) Average power supply current: CBR with RAS# ≥ tRASS (MIN) and CAS# held LOW; WE# = VCC -0.2V; A0-A11, OE# and DIN = VCC -0.2V or 0.2V (DIN may be left open) ICC8 ALL 300 300 300 300 µA 5, 7 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 7 NOTES Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. CAPACITANCE PARAMETER SYMBOL MAX UNITS NOTES Input Capacitance: Address pins CI1 5 pF 8 Input Capacitance: RAS#, CAS#, WE#, OE# CI2 7 pF 8 Input/Output Capacitance: DQ CIO 7 pF 8 MAX 30 NOTES 18 AC ELECTRICAL CHARACTERISTICS (Notes: 2, 3, 9, 10, 11, 12, 17) (VCC [MIN] ≤ VCC ≤ VCC [MAX]) AC CHARACTERISTICS PARAMETER Access time from column address Column address setup to CAS# precharge Column address hold time (referenced to RAS#) Column address setup time Row address setup time Column address to WE# delay time Access time from CAS# Column address hold time CAS# pulse width CAS# LOW to “don’t care” during Self Refresh CAS# hold time (CBR Refresh) CAS# to output in Low-Z Data output hold after next CAS# LOW CAS# precharge time Access time from CAS# precharge CAS# to RAS# precharge time CAS# hold time CAS# setup time (CBR Refresh) CAS# to WE# delay time Write command to CAS# lead time Data-in hold time Data-in setup time Output disable Output Enable OE# hold time from WE# during READ-MODIFY-WRITE cycle OE# HIGH hold from CAS# HIGH OE# HIGH pulse width OE# LOW to CAS# HIGH setup time Output buffer turn-off delay 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 -5 -6 SYMBOL tAA tACH tAR tASC tASR tAWD tCAC tCAH tCAS tCHD tCHR tCLZ tCOH tCP tCPA tCRP tCSH tCSR tCWD tCWL tDH tDS tOD tOE tOEH MIN MAX 25 8 10 UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns tOEHC 5 5 4 0 10 5 5 0 ns ns ns ns 12 38 0 0 42 MIN 15 45 0 0 49 13 8 8 15 8 0 3 8 10,000 15 10 10 15 10 0 3 10 28 5 38 5 28 8 8 0 0 tOEP tOES tOFF 8 12 12 12 10,000 35 5 45 5 35 10 10 0 0 15 15 15 13 14 7 15 13 16 16 17 18 20 Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. AC ELECTRICAL CHARACTERISTICS (Notes: 2, 3, 9, 10, 11, 12, 17) (VCC [MIN] ≤ VCC ≤ VCC [MAX]) AC CHARACTERISTICS PARAMETER OE# setup prior to RAS# during HIDDEN REFRESH cycle EDO-PAGE-MODE READ or WRITE cycle time EDO-PAGE-MODE READ-WRITE cycle time Access time from RAS# RAS# to column address delay time Row address hold time RAS# pulse width RAS# pulse width (EDO PAGE MODE) RAS# pulse width during Self Refresh Random READ or WRITE cycle time RAS# to CAS# delay time Read command hold time (referenced to CAS#) Read command setup time Refresh period (2,048 cycles) Refresh period (4,096 cycles) Refresh period S version RAS# precharge time RAS# to CAS# precharge time RAS# precharge time exiting Self Refresh Read command hold time (referenced to RAS#) RAS# hold time READ WRITE cycle time RAS# to WE# delay time Write command to RAS# lead time Transition time (rise or fall) Write command hold time Write command hold time (referenced to RAS#) WE# command setup time Output disable delay from WE# Write command pulse width WE# pulse to disable at CAS# HIGH WE# hold time (CBR Refresh) WE# setup time (CBR Refresh) 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 -5 SYMBOL tORD MIN 0 tPC 20 47 tPRWC tRAC -6 MAX MIN 0 25 56 50 tRAD 9 9 50 50 100 84 11 0 0 tRAH tRAS tRASP tRASS tRC tRCD tRCH tRCS tREF 10,000 125,000 60 12 10 60 60 100 104 14 0 0 32 64 128 tREF tREF tRP 30 5 90 0 13 116 67 13 2 8 38 0 0 5 10 8 8 tRPC tRPS tRRH tRSH tRWC tRWD tRWL tT tWCH tWCR tWCS tWHZ tWP tWPZ tWRH tWRP 9 MAX 50 12 10,000 125,000 32 64 128 40 5 105 0 15 140 79 15 2 10 45 0 0 5 10 10 10 50 15 UNITS ns ns ns ns ns ns ns ns µs ns ns ns ns ms ms ms ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns NOTES 19 21 22 23 23 13 13 Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. NOTES 1. All voltages referenced to VSS. 2. The minimum specifications are used only to indicate cycle time at which proper operation over the full temperature range (0˚C ≤ TA ≤ 70˚C) is ensured. 3. An initial pause of 100µs is required after power-up, followed by eight RAS# refresh cycles (RAS#-ONLY or CBR with WE# HIGH), before proper device operation is ensured. The eight RAS# cycle wake-ups should be repeated any time the tREF refresh requirement is exceeded. 4. NC pins are assumed to be left floating and are not tested for leakage. 5. ICC is dependent on output loading and cycle rates. Specified values are obtained with minimum cycle time and the outputs open. 6. Column address changed once each cycle. 7. Enables on-chip refresh and address counters. 8. This parameter is sampled. VCC = VCCMIN; f = 1 MHz. 9. AC characteristics assume tT = 2.5ns. 10. VIH (MIN) and VIL (MAX) are reference levels for measuring timing of input signals. Transition times are measured between VIH and VIL (or between VIL and VIH). 11. In addition to meeting the transition rate specification, all input signals must transit between VIH and VIL (or between VIL and VIH) in a monotonic manner. 12. Measured with a load equivalent to two TTL gates and 100pF; and VOL = 0.8V and VOH = 2V. 13. tWCS, tRWD, tAWD and tCWD are not restrictive operating parameters. tWCS applies to EARLY WRITE cycles. tRWD, tAWD and tCWD apply to READ-MODIFY-WRITE cycles. If tWCS ≥ tWCS (MIN), the cycle is an EARLY WRITE cycle and the data output will remain an open circuit throughout the entire cycle. If tWCS < tWCS (MIN) and tRWD ≥ tRWD (MIN), tAWD ≥ tAWD (MIN) and tCWD ≥ tCWD (MIN), the cycle is a READ-MODIFY-WRITE and the data output will contain data read from the selected cell. If neither of the above conditions is met, the state of data-out is indeterminate. OE# held HIGH and WE# taken LOW after CAS# goes LOW results in a LATE WRITE (OE#-controlled) cycle. tWCS, tRWD, tCWD and tAWD are not applicable in a LATE WRITE cycle. 14. Requires that tAA and tRAC are not violated. 15. If CAS# is LOW at the falling edge of RAS#, Q will be maintained from the previous cycle. To initiate a new 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 cycle and clear the data-out buffer, CAS# must be pulsed HIGH for tCP. 16. These parameters are referenced to CAS# leading edge in EARLY WRITE cycles and WE# leading edge in LATE WRITE or READ-MODIFY-WRITE cycles. 17. If OE# is tied permanently LOW, LATE WRITE or READ-MODIFY-WRITE operations are not permissible and should not be attempted. Additionally, WE# must be pulsed during CAS# HIGH time in order to place I/O buffers in High-Z. 18. LATE WRITE and READ-MODIFY-WRITE cycles must have both tOD and tOEH met (OE# HIGH during WRITE cycle) in order to ensure that the output buffers will be open during the WRITE cycle. The DQs will provide the previously read data if CAS# remains LOW and OE# is taken back LOW after tOEH is met. If CAS# goes HIGH prior to OE# going back LOW, the DQs will remain open. 19. Requires that tAA and tCAC are not violated. 20. tOFF (MAX) defines the time at which the output achieves the open circuit condition and is not referenced to VOH or VOL. It is referenced from the rising edge of RAS# or CAS#, whichever occurs last. 21. The tRAD (MAX) limit is no longer specified. tRAD (MAX) was specified as a reference point only. If tRAD was greater than the specified tRAD (MAX) limit, then access time was controlled exclusively by tAA (tRAC and tCAC no longer applied). With or without the tRAD (MAX) limit, tAA, tRAC and tCAC must always be met. 22. The tRCD (MAX) limit is no longer specified. tRCD (MAX) was specified as a reference point only. If tRCD was greater than the specified tRCD (MAX) limit, then access time was controlled exclusively by tCAC (tRAC [MIN] no longer applied). With or without the tRCD limit, tAA and tCAC must always be met. 23. Either tRCH or tRRH must be satisfied for a READ cycle. 24. A HIDDEN REFRESH may also be performed after a WRITE cycle. In this case, WE# is LOW and OE# is HIGH. 25. The refresh period is extended from 32ms (2K refresh) or 64ms (4K refresh) to 128ms (both 2K and 4K refreshes). For 4K refresh, tRC = 31.25µs (128ms/ 4,096 rows = 31.25µs) and for 2K refresh, tRC = 62.5µs (128ms/2,048 rows = 62.5µs). 10 Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. READ CYCLE tRC tRP tRAS RAS# V IH V IL tCSH tRRH tRSH tRCD tCRP tCAS , , , , , , , , , , , , , , , , , , , ,, , , , , , , ,,,,,,,,,,,, , , , , , , , ,,,, CAS# V IH V IL tAR tRAD tASR tRAH tASC tCAH tACH ADDR V IH V IL ROW ROW COLUMN tRCH tRCS WE# V IH V IL tAA tRAC NOTE 1 tOFF tCAC tCLZ DQ V OH V OL OPEN OE# OPEN VALID DATA t OE t OD V IH V IL DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL MIN tAA -6 MAX MIN UNITS SYMBOL 30 tOFF tACH 12 15 ns ns tAR 38 0 0 45 0 0 ns ns ns tRAD ns ns tRC ns ns ns tRCH tRRH 15 ns ns 15 ns tASC tASR 25 -5 MAX tCAC 13 tCAH 8 tCAS 8 0 5 tCLZ tCRP tCSH tOD tOE 38 0 15 10 10,000 12 12 10 0 5 45 0 10,000 MAX MIN MAX UNITS 0 12 50 0 15 60 ns ns 10,000 ns ns ns tRAC tRAH tRAS tRCD tRCS tRP tRSH -6 MIN 9 9 50 10,000 12 10 60 84 11 104 14 ns ns 0 0 30 0 0 40 ns ns ns 0 13 0 15 ns ns NOTE: 1. tOFF is referenced from rising edge of RAS# or CAS#, whichever occurs last. 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 11 Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. EARLY WRITE CYCLE tRC tRAS RAS# tRP V IH V IL tCSH tRSH , , ,, ,,, ,,,,,, , , , ,,,,,,,,,, ,,,,,,,,, ,,,,,,,,,,,,,,,,,,,,, ,, ,, ,, tCRP CAS# tRCD tCAS V IH V IL tAR tRAD tASR ADDR V IH V IL tASC tCAH tACH tRAH ROW ROW COLUMN tCWL tRWL tWCR tWCS tWCH tWP WE# V IH V IL tDH tDS V DQ V IOH IOL OE# VALID DATA V IH V IL ,, DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL tACH tAR tASC tASR tCAH tCAS tCRP MIN 12 -6 MAX 38 0 0 8 8 MIN 15 -5 MAX 45 0 0 10,000 10 10 10,000 UNITS ns SYMBOL tRAH ns ns ns tRAS ns ns tRP tRC tRCD tRSH 5 38 8 5 45 10 ns ns ns tRWL 10 0 ns ns tWCS tDS 8 0 tRAD 9 12 ns tCSH tCWL tDH 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 tWCH tWCR tWP 12 -6 MIN 9 MAX MIN 10 MAX UNITS ns 50 84 11 10,000 60 104 14 10,000 ns ns ns 30 13 40 15 ns ns 13 8 38 15 10 45 ns ns ns 0 5 0 5 ns ns Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. READ-WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE cycles) tRWC tRAS RAS# tRP V IH V IL tCSH tRSH , , , , , , , , ,,, ,,, ,, , ,, , ,,,,, ,,,,,, , , , , , , , , , , , , , , ,, , , , ,, , , ,, tCRP CAS# tRCD V IH V IL tAR tRAD tASR ADDR tCAS V IH V IL tASC tCAH tACH tRAH ROW COLUMN tRCS WE# ROW tRWD tCWL tCWD tRWL tAWD tWP V IH V IL tAA tRAC tCAC tDS t CLZ V DQ V IOH IOL VALID D OUT OPEN tOE OE# tDH VALID D IN tOD OPEN tOEH V IH V IL DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL MIN tAA -6 MAX MIN UNITS SYMBOL 30 tOD MAX MIN MAX UNITS 0 12 12 0 15 15 ns ns 60 ns ns ns tACH 12 15 tAR 45 0 49 ns ns ns tOEH tAWD 38 0 42 tRAD 9 tASR 0 0 ns ns tRAH 9 50 ns ns ns tRCD tCAC tCAH tCAS tCLZ tCRP 13 8 8 0 10,000 15 10 10 0 10,000 tOE tRCS tRP 5 38 5 45 ns ns tRSH 35 10 10 ns ns ns tRWD tDH 28 8 8 tDS 0 0 ns tCSH tCWD tCWL 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 8 tRAC tRAS tRWC tRWL tWP 13 -6 MIN ns ns tASC 25 -5 MAX 10 50 12 10,000 10 60 10,000 ns ns 11 0 30 14 0 40 ns ns ns 13 116 15 140 ns ns 67 13 5 79 15 5 ns ns ns Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. EDO-PAGE-MODE READ CYCLE tRASP tRP V IH V IL RAS# tCSH tRSH tCAS tPC ,,, ,,,, ,,, ,,, ,,,,,, , , ,,,,,,,,, , , , tCRP tRCD tCAS tCAS tCP tCP V IH V IL CAS# tAR tRAD tASR V IH V IL ADDR tACH tACH tASC tRAH ROW tCAH tASC COLUMN tCAH tACH tASC COLUMN tAA tRAC tCPA tCAC tCAC tCOH tCLZ DQ V OH V OL VALID DATA OPEN OE# tCPA tCAC tCLZ tOFF tOEHC VALID DATA OPEN tOE tOD tOES V IH V IL tRRH tAA VALID DATA tOE ROW tRCH V IH V IL tAA , , , ,, ,, ,, , ,,,,, , ,, , tCAH COLUMN tRCS WE# tCP tOD tOES tOEP DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL tAA tACH -6 12 15 45 0 ns ns tOES tASC 38 0 tASR 0 ns ns ns tPC tRAD 9 ns ns tRAH 9 50 ns ns tRCD ns ns ns tRCS ns ns tCAC 8 tCAS 8 0 tCOH tCP tCSH tOD tOE 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 15 10 10,000 10 0 10,000 3 10 28 5 38 0 MAX 30 0 3 8 tCPA tCRP MIN 13 tCAH tCLZ MAX 25 -5 UNITS ns ns tAR MIN 35 5 45 12 12 0 15 15 SYMBOL tOEHC tOEP tOFF MIN 5 5 4 0 MIN 10 5 5 0 MAX 15 25 50 60 12 125,000 10 60 125,000 UNITS ns ns ns ns ns ns ns ns ns 11 0 14 0 ns ns tRRH 0 30 0 0 40 0 ns ns ns tRSH 13 15 ns tRCH tRP 14 12 20 tRAC tRASP -6 MAX Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. EDO-PAGE-MODE EARLY WRITE CYCLE tRP tRASP RAS# V IH V IL tCSH tPC tRSH , , , , , ,,,,, ,,, ,, , , , , , , , , , , , , ,,,,, , ,, ,, ,,,,,, ,, ,,,,,,,,,,,,,,,,, , , ,, tCRP CAS# tRCD tCAS tCP tCAS tCP tCAS tCP V IH V IL tAR tRAD tASR ADDR V IH V IL tRAH tACH tASC ROW tACH tCAH tASC COLUMN tCAH COLUMN tCWL tWCH tWCS tWCS tWCH tWP tWP V IH V IL tWCR tDS V DQ V IOH IOL OE# ROW tCWL tWCH tWP WE# tASC COLUMN tCWL tWCS tACH tCAH tDH tDS VALID DATA tDH tRWL tDH tDS VALID DATA VALID DATA V IH V IL , DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL tACH tAR tASC tASR tCAH tCAS tCP MIN 12 -6 MAX MIN 15 -5 MAX UNITS ns SYMBOL tPC 38 0 45 0 ns ns tRAD 0 8 8 0 10 10 ns ns ns tRASP 10,000 10,000 tRAH tRCD tRP 8 5 10 5 ns ns tRSH 45 10 10 ns ns ns tWCH tDH 38 8 8 tDS 0 0 ns tWP tCRP tCSH tCWL 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 tRWL tWCR tWCS 15 MIN 20 -6 MAX 9 9 50 11 30 MIN 25 MAX 12 10 125,000 60 14 40 UNITS ns ns ns 125,000 ns ns ns 13 13 15 15 ns ns 8 38 0 10 45 0 ns ns ns 5 5 ns Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. EDO-PAGE-MODE READ-WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE cycles) tRASP RAS# tRP V IH V IL tCSH tPRWC NOTE 1 t PC tRSH , , , , , , , , ,,, ,, ,, , , , , , , ,, , ,, ,, ,, , , , , , ,, , , , , ,, ,, ,, , , , ,,, tCRP CAS# tRCD tCAS tCP tCAS tCP tCAS tCP V IH V IL tAR tRAD tASR ADDR V IH V IL tRAH tASC ROW tCAH tASC COLUMN tCAH tASC COLUMN tCAH COLUMN ROW tRWD tRCS WE# tRWL tCWL tCWL tWP tAWD tCWD tWP tAWD tCWD tAA tCWD tAA tDH tDS V IOH V IOL tCPA tCAC tCAC tCLZ tCLZ VALID D OUT OPEN tAA tDH tDS tDH tCPA tDS tCAC tCLZ VALID D IN VALID D OUT tOD VALID D IN VALID D OUT tOD tOE OE# tAWD V IH V IL tRAC DQ tCWL tWP VALID D IN OPEN tOD tOE tOE tOEH V IH V IL DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL tAA tAR -6 38 45 0 0 ns ns tOEH tASR 0 0 tPC 8 20 tAWD 42 ns ns ns tPRWC 47 tRAD 9 ns ns tRAH 9 50 tRCD tCAC MAX 25 MIN -5 UNITS ns ns tASC MIN 49 13 tCAH 8 tCAS tCLZ 8 0 tCP 8 MAX 30 15 10 10,000 10 0 10,000 tRASP tCRP 5 5 tCSH 38 28 45 35 ns ns tRSH 8 8 10 10 ns ns tRWL tDH tDS 0 0 ns tCWD tCWL 28 35 MIN 0 tRAC ns ns ns tCPA 10 SYMBOL tOD tOE tRCS tRP tRWD tWP -6 MAX 12 12 MIN 0 MAX 15 15 10 25 ns ns 56 50 60 12 125,000 10 60 UNITS ns ns 125,000 ns ns ns ns ns 11 0 30 14 0 40 ns ns ns 13 67 15 79 ns ns 13 5 15 5 ns ns NOTE: 1. tPC is for LATE WRITE cycles only. 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 16 Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. EDO-PAGE-MODE READ EARLY WRITE CYCLE (Pseudo READ-MODIFY-WRITE) t RP t RASP RAS# V IH V IL t CSH t PC t CRP t RCD t RSH t PC t CP t CAS t CP t CAS t CP t CAS ,,,,, ,,, ,,,, ,,, , ,, ,, ,,,,,,,, , , , , CAS# V IH V IL t AR t RAD tASR ADDR V IH V IL t ACH t RAH t ASC ROW t CAH t ASC COLUMN (A) t CAH COLUMN (B) V IH V IL t WCS ROW t WCH t AA t AA t CPA t RAC t CAC t CAC t COH DQ V IOH V IOL t CAH COLUMN (N) t RCH t RCS WE# t ASC OPEN VALID DATA (A) t DS t DH t WHZ VALID DATA (B) VALID DATA IN t OE OE# V IH V IL DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL tAA tACH -6 12 15 45 0 ns ns tRAC tASC 38 0 tRAD 9 tASR 0 0 ns ns ns tRAH 9 50 ns ns tRCH ns ns tRP tWCH tCAC MIN 13 tCAH 8 tCAS tCOH 8 3 tCP 8 tCPA tCRP MAX 25 -5 UNITS ns ns tAR MIN MAX 30 15 10 10,000 10 3 10,000 10 28 35 tDH 5 38 8 5 45 10 ns ns ns tDS 0 0 ns tCSH 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 SYMBOL MIN tOE tPC tRASP tRCD tRCS tRSH tWCS tWHZ 17 -6 MAX MIN 12 20 MAX UNITS 15 ns 60 ns ns ns 25 50 12 125,000 10 60 125,000 ns ns 11 0 0 14 0 0 ns ns ns 30 13 40 15 ns ns 8 0 0 10 0 0 ns ns ns 12 15 Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. READ CYCLE (With WE#-controlled disable) RAS# V IH V IL tCSH , , , , , , , , , , , , , , ,, , , , , , , ,, ,,,,,,,,, , , , , , , ,,, , tRCD tCRP CAS# tCAS tCP V IH V IL tAR tRAD tASR ADDR V IH V IL tRAH tASC ROW tCAH tASC COLUMN COLUMN tRCS WE# tRCH tWPZ tRCS V IH V IL tAA tRAC tCAC tWHZ tCLZ DQ V OH V OL OPEN VALID DATA t OE OE# tCLZ OPEN t OD V IH V IL DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL tAA tAR tASC tASR MIN 38 0 tCAS tCLZ tCP MIN 0 13 8 8 0 -5 MAX 30 45 0 0 tCAC tCAH -6 MAX 25 10,000 15 10 10 0 10,000 UNITS ns ns ns ns ns tRAD ns ns ns tRCD tWHZ tCRP 8 5 10 5 ns ns tCSH 38 45 ns 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 SYMBOL tOD tOE tRAC tRAH tRCH tRCS tWPZ 18 MIN 0 -6 MAX 12 12 50 MIN 0 MAX 15 15 60 UNITS ns ns ns 9 9 12 10 ns ns 11 0 0 14 0 0 ns ns ns 0 10 12 0 10 15 ns ns Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. RAS#-ONLY REFRESH CYCLE (OE# and WE# = DON’T CARE) tRC tRAS CAS# ADDR , , , , ,,,,, ,, V IH V IL ,, RAS# tRP tCRP tRPC V IH V IL tASR tRAH V IH V IL ROW V DQ V OH OL ROW OPEN CBR REFRESH CYCLE (Addresses and OE# = DON’T CARE) tRP RAS# tRAS tRP tRAS V IH V IL tRPC ,,,,,,,,,,,,,,,,,,,, , ,,, tCP CAS# V IH V IL DQ V OH V OL tCSR tCHR OPEN tWRP WE# tRPC tCHR tCSR tWRH tWRP tWRH V IH V IL , DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL tASR tCHR MIN 0 -6 MAX MIN 0 -5 MAX UNITS ns SYMBOL tRAS 8 8 10 10 ns ns tRC 5 5 5 5 ns ns tRPC tCSR tRAH 9 10 ns tCP tCRP 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 -6 MAX 10,000 MIN 60 MAX 10,000 UNITS ns 84 30 104 40 ns ns tWRH 5 8 5 10 ns ns tWRP 8 10 ns tRP 19 MIN 50 Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. HIDDEN REFRESH CYCLE 24 (WE# = HIGH; OE# = LOW) tRAS tRP tRAS V IH V IL , , , , , , ,, , , , , , , ,, , , , , , , , , , , , , , , , , , , , , ,, ,,, , , RAS# tCRP CAS# tRSH tRCD tCHR V IH V IL tAR tRAD tASR ADDR V IH V IL tRAH tASC ROW tCAH COLUMN tAA tRAC tOFF tCAC tCLZ V DQ V OH OL OPEN VALID DATA OPEN tOD tOE tORD V OE# V IH IL DON’T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL MIN tAA tAR tASC tASR -6 MAX MIN 25 38 0 0 tCAC -5 MAX UNITS 30 ns ns ns ns tOE tRAD 45 0 0 tORD 8 10 tCHR 10 0 5 ns ns ns tRAS tCRP 8 0 5 tOD 0 ns tRSH 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 0 15 MIN tRAH tRCD tRP 20 -6 MAX MIN 12 0 0 tRAC tCAH 12 15 tOFF ns ns tCLZ 13 SYMBOL 12 0 0 50 9 9 50 11 30 13 MAX UNITS 15 ns 15 ns ns 60 ns ns ns 10,000 ns ns 12 10 10,000 60 14 40 15 ns ns Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. SELF REFRESH CYCLE (Addresses and OE# = DON’T CARE) RAS# , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,, , ,, ,, ,, , V IH V IL V IH V IL DQ V OH V OL WE# (( )) tRPC tCP CAS# NOTE 1 tRASS tRP NOTE 2 tRPC (( )) tCSR tRPS (( )) tCP tCHD (( )) (( )) (( )) tWRP OPEN tWRP tWRH tWRH (( )) (( )) V IH V IL ,, ,, DON'T CARE UNDEFINED TIMING PARAMETERS -5 SYMBOL tCHD tCP tCSR tRASS tRP MIN 15 8 5 100 30 -6 MAX MIN 15 10 5 100 40 -5 MAX UNITS ns ns ns µs ns SYMBOL tRPC tRPS tWRH tWRP MIN 5 90 8 8 -6 MAX MIN 5 105 10 10 MAX UNITS ns ns ns ns NOTE: 1. Once tRASS (MIN) is met and RAS# remains LOW, the DRAM will enter Self Refresh mode. 2. Once tRPS is satisfied, a complete burst of all rows should be executed. 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 21 Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. 24/26-PIN PLASTIC SOJ (300 mil) DA-2 .679 (17.25) .673 (17.09) .305 (7.75) .299 (7.59) .340 (8.64) .330 (8.38) PIN #1 INDEX .050 (1.27) TYP .600 (15.24) TYP .037 (0.94) MAX DAMBAR PROTRUSION .032 (0.81) .026 (0.66) .142 (3.61) .132 (3.35) SEATING PLANE .020 (0.51) .015 (0.38) NOTE: .109 (2.77) .094 (2.39) .040 (1.02) R .030 (0.76) .275 (6.99) .260 (6.60) .025 (0.64) MIN MAX or typical where noted. MIN 2. Package width and length do not include mold protrusion; allowable mold protrusion is .01" per side. 1. All dimensions in inches (millimeters) 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 22 Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc. 4 MEG x 4 EDO DRAM TECHNOLOGY, INC. 24/26-PIN PLASTIC TSOP (300 mil) DB-2 .678 (17.23) .672 (17.07) SEE DETAIL A .037 (0.95) .367 (9.32) .359 (9.12) .302 (7.67) .298 (7.57) .007 (0.18) .005 (0.13) PIN #1 INDEX .050 (1.27) TYP .020 (0.50) .012 (0.30) .010 (0.25) .004 (0.10) .047 (1.20) MAX SEATING PLANE .006 (0.15) .002 (0.05) DETAIL A NOTE: GAGE PLANE .024 (0.60) .016 (0.40) .032 (0.80) TYP 1. All dimensions in inches (millimeters) MAX or typical where noted. MIN 2. Package width and length do not include mold protrusion; allowable mold protrusion is .01" per side. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900, Micron DataFax: 208-368-5800 E-mail: [email protected], Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 4 Meg x 4 EDO DRAM D47.pm5 – Rev. 3/97 23 Micron Technology, Inc., reserves the right to change products or specifications without notice. 1997, Micron Technology, Inc.