ESDA6V1-5P6 ® Application Specific Discretes A.S.D. TRANSIL™ ARRAY FOR ESD PROTECTION MAIN APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : Computers Printers Communication systems and cellular phones Video equipment This device is particularly adpated to the protection of symmetrical signals. ■ ■ ■ ■ SOT-666 FEATURES 5 UNIDIRECTIONAL TRANSIL™ FUNCTIONS. BREAKDOWN VOLTAGE VBR = 6.1V MIN LOW LEAKAGE CURRENT < 500 nA VERY SMALL PCB AREA < 2.6 mm2 ■ ■ ■ ■ DESCRIPTION The ESDA6V1-5P6 is a monolithic array designed to protect up to 5 lines against ESD transients. This device is ideal for applications where board space saving is required. BENEFITS High ESD protection level. High integration. Suitable for high density boards. ■ FUNCTIONAL DIAGRAM I/O1 I/O5 GND I/O4 I/O2 I/O3 ■ ■ COMPLIES WITH THE FOLLOWING STANDARDS : ■ ■ IEC61000-4-2 level 4: 15 kV (air discharge) 8 kV (contact discharge) MIL STD 883E-Method 3015-7: class 3 25kV HBM (Human Body Model) March 2003 - Ed: 2A 1/5 ESDA6V1-5P6 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter Test conditions Value Unit VPP ESD discharge - IEC61000-4-2 air discharge IEC61000-4-2 contact discharge ± 15 ±8 kV PPP Peak pulse power (8/20 µs) (see note 1) 150 W 125 °C - 55 to + 150 °C 260 °C - 40 to + 150 °C Tj initial = Tamb Junction temperature Tj Tstg Storage temperature range TL Maximum lead temperature for soldering during 10s at 5mm for case Top Operating temperature range Note 1: for a surge greater than the maximum values, the diode will fail in short-circuit. THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambient on printed circuit on recommended pad layout 220 °C/W ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current IPP Peak pulse current αT Voltage tempature coefficient VF Forward voltage drop C Capacitance per line Rd Dynamic resistance Types VBR min. I IF VF VCL VBR VRM V IRM @ Slope: 1/Rd IR IRM @ VRM IPP Rd αT C typ. max. max. typ. max. V V mA µA V Ω -4 10 /°C pF 6.1 7.2 1 0.5 3 1.5 4.5 70 @ 0V ESDA6V1-5P6 2/5 ESDA6V1-5P6 Fig. 1: Relative variation of peak pulse power versus initial junction temperature. Fig. 2: Peak pulse power versus exponential pulse duration. PPP[Tj initial] / PPP[Tj initial=25°C) PPP(W) 1.1 1000 Tj initial=25°C 1.0 0.9 0.8 0.7 0.6 100 0.5 0.4 0.3 0.2 0.1 Tp(µs) Tj(°C) 0.0 10 0 25 50 75 100 125 150 Fig. 3: Clamping voltage versus peak pulse current (typical values, rectangular waveform). 1 10 100 Fig. 4: Forward voltage drop versus peak forward current (typical values). IFM(A) IPP(A) 1.E+00 100.0 tp=2.5µs Tj initial=25°C Tj=125°C 10.0 1.E-01 1.0 1.E-02 Tj=25°C VCL(V) VFM(V) 1.E-03 0.1 0 10 20 30 40 50 60 0.0 70 Fig. 5: Junction capacitance versus reverse voltage applied (typical values). 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Fig. 6: Relative variation of leakage current versus junction temperature (typical values). C(pF) IR[Tj] / IR[Tj=25°C] 80 2.0 F=1MHz VOSC=30mVRMS Tj=25°C 70 VR=3V 1.8 1.6 60 1.4 50 1.2 40 1.0 30 0.8 0.6 20 0.4 10 0.2 Tj(°C) VR(V) 0 0.0 0 1 2 3 4 5 6 25 50 75 100 125 3/5 ESDA6V1-5P6 Fig. 7: ESD response @ VPP=8kV contact. Fig. 8: ESD response @ VPP=15kV contact. IEC61000-4-2: VPP=15kV Contact IEC61000-4-2: VPP=8kV Contact ORDER CODE ESDA 6V1 5 P6 PACKAGE: SOT-666 ESD ARRAY VBR min 5 lines 4/5 Ordering type Marking Package Weight Base qty Delivery mode ESDA6V1-5P6 C SOT-666 2.9 mg. 3000 Tape & reel ESDA6V1-5P6 PACKAGE MECHANICAL DATA SOT-666 DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A 0.50 0.60 0.020 0.024 bp 0.17 0.27 0.007 0.011 c 0.08 0.18 0.003 0.007 D 1.50 1.70 0.060 0.067 E 1.10 1.30 0.043 0.051 bp e1 e D E A Lp U e 1.00 0.040 e1 0.50 0.020 He 1.50 1.70 0.059 0.067 Lp 0.10 0.30 0.004 0.012 He FOOT PRINT (in millimeters) 0.36 0.30 0.62 2.30 0.84 0.20 0.20 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5