ETC ESDA6V1-5P

ESDA6V1-5P6
®
Application Specific Discretes
A.S.D.
TRANSIL™ ARRAY
FOR ESD PROTECTION
MAIN APPLICATIONS
Where transient overvoltage protection in ESD
sensitive equipment is required, such as :
Computers
Printers
Communication systems and cellular phones
Video equipment
This device is particularly adpated to the protection
of symmetrical signals.
■
■
■
■
SOT-666
FEATURES
5 UNIDIRECTIONAL TRANSIL™ FUNCTIONS.
BREAKDOWN VOLTAGE VBR = 6.1V MIN
LOW LEAKAGE CURRENT < 500 nA
VERY SMALL PCB AREA < 2.6 mm2
■
■
■
■
DESCRIPTION
The ESDA6V1-5P6 is a monolithic array designed
to protect up to 5 lines against ESD transients.
This device is ideal for applications where board
space saving is required.
BENEFITS
High ESD protection level.
High integration.
Suitable for high density boards.
■
FUNCTIONAL DIAGRAM
I/O1
I/O5
GND
I/O4
I/O2
I/O3
■
■
COMPLIES WITH THE FOLLOWING STANDARDS :
■
■
IEC61000-4-2 level 4: 15 kV (air discharge)
8 kV (contact discharge)
MIL STD 883E-Method 3015-7: class 3
25kV HBM (Human Body Model)
March 2003 - Ed: 2A
1/5
ESDA6V1-5P6
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
Test conditions
Value
Unit
VPP
ESD discharge - IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
± 15
±8
kV
PPP
Peak pulse power (8/20 µs) (see note 1)
150
W
125
°C
- 55 to + 150
°C
260
°C
- 40 to + 150
°C
Tj initial = Tamb
Junction temperature
Tj
Tstg
Storage temperature range
TL
Maximum lead temperature for soldering during 10s at 5mm for case
Top
Operating temperature range
Note 1: for a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient on printed circuit on recommended pad layout
220
°C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
Parameter
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current
IPP
Peak pulse current
αT
Voltage tempature coefficient
VF
Forward voltage drop
C
Capacitance per line
Rd
Dynamic resistance
Types
VBR
min.
I
IF
VF
VCL VBR
VRM
V
IRM
@
Slope: 1/Rd
IR
IRM
@
VRM
IPP
Rd
αT
C
typ.
max.
max.
typ.
max.
V
V
mA
µA
V
Ω
-4
10 /°C
pF
6.1
7.2
1
0.5
3
1.5
4.5
70
@ 0V
ESDA6V1-5P6
2/5
ESDA6V1-5P6
Fig. 1: Relative variation of peak pulse power
versus initial junction temperature.
Fig. 2: Peak pulse power versus exponential pulse
duration.
PPP[Tj initial] / PPP[Tj initial=25°C)
PPP(W)
1.1
1000
Tj initial=25°C
1.0
0.9
0.8
0.7
0.6
100
0.5
0.4
0.3
0.2
0.1
Tp(µs)
Tj(°C)
0.0
10
0
25
50
75
100
125
150
Fig. 3: Clamping voltage versus peak pulse
current (typical values, rectangular waveform).
1
10
100
Fig. 4: Forward voltage drop versus peak forward
current (typical values).
IFM(A)
IPP(A)
1.E+00
100.0
tp=2.5µs
Tj initial=25°C
Tj=125°C
10.0
1.E-01
1.0
1.E-02
Tj=25°C
VCL(V)
VFM(V)
1.E-03
0.1
0
10
20
30
40
50
60
0.0
70
Fig. 5: Junction capacitance versus reverse
voltage applied (typical values).
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Fig. 6: Relative variation of leakage current versus
junction temperature (typical values).
C(pF)
IR[Tj] / IR[Tj=25°C]
80
2.0
F=1MHz
VOSC=30mVRMS
Tj=25°C
70
VR=3V
1.8
1.6
60
1.4
50
1.2
40
1.0
30
0.8
0.6
20
0.4
10
0.2
Tj(°C)
VR(V)
0
0.0
0
1
2
3
4
5
6
25
50
75
100
125
3/5
ESDA6V1-5P6
Fig. 7: ESD response @ VPP=8kV contact.
Fig. 8: ESD response @ VPP=15kV contact.
IEC61000-4-2: VPP=15kV Contact
IEC61000-4-2: VPP=8kV Contact
ORDER CODE
ESDA 6V1 5 P6
PACKAGE: SOT-666
ESD ARRAY
VBR min
5 lines
4/5
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
ESDA6V1-5P6
C
SOT-666
2.9 mg.
3000
Tape & reel
ESDA6V1-5P6
PACKAGE MECHANICAL DATA
SOT-666
DIMENSIONS
REF.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
0.50
0.60
0.020
0.024
bp
0.17
0.27
0.007
0.011
c
0.08
0.18
0.003
0.007
D
1.50
1.70
0.060
0.067
E
1.10
1.30
0.043
0.051
bp
e1
e
D
E
A
Lp
U
e
1.00
0.040
e1
0.50
0.020
He
1.50
1.70
0.059
0.067
Lp
0.10
0.30
0.004
0.012
He
FOOT PRINT (in millimeters)
0.36
0.30
0.62
2.30
0.84
0.20
0.20
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore
Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
5/5