ETC HGT1S5N120CNS9A

HGTP5N120CN, HGT1S5N120CNS
Data Sheet
January 2000
25A, 1200V, NPT Series N-Channel IGBT
Features
The HGTP5N120CN and HGT1S5N120CNS are Non-Punch
Through (NPT) IGBT designs. They are new members of the
MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
• 25A, 1200V, TC = 25oC
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
• Avalanche Rated
Formerly Developmental Type TA49309.
Ordering Information
PART NUMBER
File Number
4596.2
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
PACKAGE
BRAND
HGTP5N120CN
TO-220AB
G5N120CN
HGT1S5N120CNS
TO-263AB
G5N120CN
JEDEC TO-220AB ALTERNATE VERSION
E
C
G
COLLECTOR
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S5N120CNS9A.
Symbol
C
JEDEC TO-263AB
G
COLLECTOR
(FLANGE)
G
E
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
1
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
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HGTP5N120CN, HGT1S5N120CNS
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
HGTP5N120CN
HGT1S5N120CNS
UNITS
1200
V
25
12
40
±20
±30
30A at 1200V
167
1.33
36
-55 to 150
A
A
A
V
V
W
W/oC
mJ
oC
300
260
oC
8
15
µs
µs
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 840V, TJ = 125oC, RG = 25Ω.
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
1200
-
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = 10mA, VGE = 0V
15
-
-
V
TC = 25oC
-
-
250
µA
TC = 125oC
-
100
-
µA
TC = 150oC
-
-
2
mA
TC = 25oC
-
2.1
2.4
V
TC = 150oC
-
2.9
3.5
V
6.0
7.0
-
V
-
-
±250
nA
25
-
-
A
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
ICES
VCE(SAT)
VGE(TH)
VCE = BVCES
IC = 5.5A,
VGE = 15V
IC = 45µA, VCE = VGE
Gate to Emitter Leakage Current
IGES
VGE = ±20V
Switching SOA
SSOA
TJ = 150oC, RG = 25Ω, VGE = 15V,
L = 200µH, VCE(PK) = 1200V
Gate to Emitter Plateau Voltage
VGEP
IC = 5.5A, VCE = 0.5 BVCES
-
10.6
-
V
IC = 5.5A,
VCE = 0.5 BVCES
VGE = 15V
-
45
55
nC
VGE = 20V
-
60
75
nC
On-State Gate Charge
QG(ON)
2
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HGTP5N120CN, HGT1S5N120CNS
TC = 25oC, Unless Otherwise Specified (Continued)
Electrical Specifications
PARAMETER
SYMBOL
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
TEST CONDITIONS
IGBT and Diode at TJ = 25oC
ICE = 5.5A
VCE = 0.8 BVCES
VGE = 15V
RG = 25Ω
L = 5mH
Test Circuit (Figure 18)
MIN
TYP
MAX
UNITS
-
22
30
ns
-
12
16
ns
-
180
250
ns
-
280
350
ns
Turn-On Energy (Note 3)
EON1
-
220
-
µJ
Turn-On Energy (Note 3)
EON2
-
400
500
µJ
Turn-Off Energy (Note 4)
EOFF
-
640
700
µJ
Current Turn-On Delay Time
td(ON)I
-
20
25
ns
-
12
16
ns
-
225
300
ns
-
350
400
ns
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
IGBT and Diode at TJ = 150oC
ICE = 5.5A
VCE = 0.8 BVCES
VGE = 15V
RG = 25Ω
L = 5mH
Test Circuit (Figure 18)
Turn-On Energy (Note 3)
EON1
-
220
-
µJ
Turn-On Energy (Note 3)
EON2
-
1
1.2
mJ
Turn-Off Energy (Note 4)
EOFF
-
1
1.1
mJ
0.75
oC/W
Thermal Resistance Junction To Case
RθJC
-
-
NOTES:
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 18.
4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Unless Otherwise Specified
ICE , DC COLLECTOR CURRENT (A)
25
VGE = 15V
20
15
10
5
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
3
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150
ICE , COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
35
TJ = 150oC, RG = 25Ω, VGE = 15V, L = 200µH
30
25
20
15
10
5
0
0
200
400
600
800
1000
1200
1400
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
HGTP5N120CN, HGT1S5N120CNS
TJ = 150oC, RG = 25Ω, L = 5mH, V CE = 960V
100
50
TC
VGE
75oC
75oC
110oC
110oC
15V
12V
15V
12V
TC = 75oC, VGE = 5V
IDEAL DIODE
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.75oC/W, SEE NOTES
20
10
1
2
3
5
10
35
60
30
ISC
25
50
20
40
30
15
tSC
10
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
TC = -55oC
TC = 150oC
15
TC = 25oC
10
5
0
0
1
2
3
4
5
6
8
7
9
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
25
20
13
14
15
20
80
DUTY CYCLE < 0.5%, VGE = 15V
250µs PULSE TEST
70
60
50
TC = -55oC
40
TC = 150oC
30
20
TC = 25oC
10
0
0
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
2
4
6
8
10
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1750
EOFF, TURN-OFF ENERGY LOSS (µJ)
3000
EON2 , TURN-ON ENERGY LOSS (mJ)
12
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
DUTY CYCLE < 0.5%, VGE = 12V
250µs PULSE TEST
30
11
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
35
70
VCE = 840V, RG = 25Ω, TJ = 125oC
ISC , PEAK SHORT CIRCUIT CURRENT (A)
200
Unless Otherwise Specified (Continued)
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
fMAX , OPERATING FREQUENCY (kHz)
Typical Performance Curves
RG = 25Ω, L = 5mH, VCE = 960V
2500
TJ = 150o, VGE = 15V, VGE = 12V
2000
1500
1000
500
TJ = 25oC, VGE = 15V, VGE = 12V
0
RG = 25Ω, L = 5mH, VCE = 960V
1500
TJ = 150oC, VGE = 12V OR 15V
1250
1000
750
500
TJ = 25oC, VGE = 12V OR 15V
250
0
2
3
4
5
6
7
8
9
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4
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10
1
2
3
4
5
6
7
8
9
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
10
HGTP5N120CN, HGT1S5N120CNS
Typical Performance Curves
Unless Otherwise Specified (Continued)
40
RG = 25Ω, L = 5mH, VCE = 960V
RG = 25Ω, L = 5mH, VCE = 960V
35
35
trI , RISE TIME (ns)
tdI , TURN-ON DELAY TIME (ns)
40
30
TJ = 25oC, TJ = 150oC, VGE = 12V
25
30
TJ = 25oC, TJ = 150oC, VGE = 12V
25
20
15
20
10
TJ = 25oC, TJ = 150oC, VGE = 15V
15
2
3
5
4
7
6
8
9
0
10
TJ = 25oC, TJ = 150oC, VGE = 15V
2
3
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
7
8
9
10
RG = 25Ω, L = 5mH, VCE = 960V
800
400
TJ = 150oC, VGE = 12V, VGE = 15V
300
200
700
600
500
TJ = 150oC, VGE = 12V AND 15V
400
300
100
TJ = 25oC, VGE = 12V, VGE = 15V
100
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
9
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
TC = 25oC
DUTY CYCLE < 0.5%, VCE = 20V
250µs PULSE TEST
90
VGE , GATE TO EMITTER VOLTAGE (V)
16
100
80
70
TC = -55oC
60
50
TC = 150oC
40
30
20
10
0
TJ = 25oC, VGE = 12V AND 15V
200
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
6
900
RG = 25Ω, L = 5mH, VCE = 960V
500
0
5
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
600
4
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
14
VCE = 1200V
12
10
8
6
4
2
IG(REF) = 1mA, RL = 120Ω, TC = 25oC
0
6
7
8
9
10
11
12
13
14
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
5
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15
16
VCE = 800V
VCE = 400V
0
10
20
30
40
50
QG , GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
60
HGTP5N120CN, HGT1S5N120CNS
Unless Otherwise Specified (Continued)
2.0
C, CAPACITANCE (nF)
FREQUENCY = 1MHz
1.5
CIES
1.0
0.5
COES
CRES
0
0
5
10
15
20
25
ICE , COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
7
DUTY CYCLE < 0.5%, TC = 110oC
250µs PULSE TEST
VGE = 15V
6
5
VGE = 10V
4
3
2
1
0
1.5
3.0
0.5
1.0
2.0
2.5
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
0
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
ZθJC , NORMALIZED THERMAL RESPONSE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
3.5
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
100
0.50
0.20
0.10
10-1
0.05
t1
0.02
0.01
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-2 -5
10
10-4
10-3
10-2
PD
t2
10-1
100
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
RHRD4120
90%
10%
VGE
EON2
EOFF
L = 5mH
VCE
RG = 25Ω
90%
+
-
ICE
VDD = 960V
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
6
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FIGURE 19. SWITCHING TEST WAVEFORMS
HGTP5N120CN, HGT1S5N120CNS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 19.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 19. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in the
calculation for EOFF; i.e., the collector current equals zero
(ICE = 0).
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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