INTERSIL HGT1S7N60B3DS

HGTP7N60B3D, HGT1S7N60B3DS
Data Sheet
January 2000
14A, 600V, UFS Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diode
The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25oC
and 150oC at rated current. The IGBT is developmental type
TA49190. The diode used in anti-parallel with the IGBT is the
RHRD660 (TA49057).
File Number
4413.2
Features
• 14A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
E
C
COLLECTOR
(FLANGE)
G
Formerly Developmental Type TA49191.
Ordering Information
PART NUMBER
PACKAGE
BRAND
JEDEC TO-263AB
HGTP7N60B3D
TO-220AB ALT
G7N60B3D
HGT1S7N60B3DS
TO-263AB
G7N60B3D
COLLECTOR
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S7N60B3DS9A.
G
E
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
1
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
HGTP7N60B3D, HGT1S7N60B3DS
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
ALL TYPES
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
600
V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Average Rectified Forward Current at TC = 152oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
14
7
6
56
±20
±30
35A at 600V
60
0.476
-55 to 150
260
2
12
A
A
A
A
V
V
W
W/ oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; Pulse width limited by maximum junction temperature. Parts may current limit at less than ICM.
2. VCE(PK) = 360V, TJ = 125oC, RG = 50Ω .
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
Switching SOA
SSOA
Gate to Emitter Plateau Voltage
VGEP
On-State Gate Charge
QG(ON)
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
TEST CONDITIONS
MIN
TYP
MAX
UNITS
600
-
-
V
-
-
100
µA
-
-
3.0
mA
-
1.8
2.1
V
-
2.1
2.4
V
3.0
5.1
6.0
V
-
-
±100
nA
VCE = 480V
42
-
-
A
VCE = 600V
35
-
-
A
IC = IC110, VCE = 0.5 BVCES
-
7.7
-
V
IC = IC110,
VCE = 0. 5BVCES
VGE = 15V
-
23
28
nC
VGE = 20V
-
30
37
nC
-
26
-
ns
-
21
-
ns
-
130
160
ns
IC = 250µA, VGE = 0V
VCE = BVCES
IC = IC110, VGE = 15V
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
IC = 250µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 50Ω,
VGE = 15V, L = 100µH
IGBT and Diode Both at TJ = 25oC,
ICE = IC110, VCE = 0.8 BVCES,
VGE = 15V, RG = 50Ω, L = 2mH,
Test Circuit (Figure 19)
Current Fall Time
tfI
-
60
80
ns
Turn-On Energy
EON
-
160
200
µJ
Turn-Off Energy (Note 3)
EOFF
-
120
200
µJ
2
HGTP7N60B3D, HGT1S7N60B3DS
TC = 25oC, Unless Otherwise Specified (Continued)
Electrical Specifications
PARAMETER
SYMBOL
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
TEST CONDITIONS
IGBT and Diode Both at TJ = 150oC
ICE = IC110, VCE = 0.8 BVCES,
VGE = 15V, RG = 50Ω, L = 2mH,
Test Circuit (Figure 19)
MIN
TYP
MAX
UNITS
-
24
-
ns
-
22
-
ns
-
230
295
ns
Current Fall Time
tfI
-
120
175
ns
Turn-On Energy
EON
-
310
350
µJ
Turn-Off Energy (Note 3)
EOFF
-
350
500
µJ
Diode Forward Voltage
VEC
IEC = 7A
-
1.85
2.2
V
IEC = 7A, dIEC/dt = 200A/µs
-
-
37
ns
IEC = 1A, dIEC/dt = 200A/µs
-
-
32
ns
IGBT
-
-
2.1
oC/W
Diode
-
-
3.0
oC/W
Diode Reverse Recovery Time
trr
Thermal Resistance Junction To Case
RθJC
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include losses due
to diode recovery.
Unless Otherwise Specified
ICE , DC COLLECTOR CURRENT (A)
16
VGE = 15V
14
12
10
8
6
4
2
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
3
150
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
50
TJ = 150oC, RG = 50Ω, VGE = 15V
40
30
20
10
0
0
100
200
300
400
500
600
700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
HGTP7N60B3D, HGT1S7N60B3DS
TJ = 150oC, RG = 50Ω, L = 2mH, VCE = 480V
100
TC
VGE
75oC
75oC
110oC
110oC
15V
10V
15V
10V
10 f
MAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 2.1oC/W, SEE NOTES
1
1
2
4
3
5
6
8
10
18
14
80
ISC
10
60
6
2
10
15
11
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
PULSE DURATION = 250µs
25
20
TC = 150oC
15
TC = 25oC
10
5
0
1
2
3
4
5
6
7
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
8
FIGURE 5. COLLECTOR TO EMITTER ON STATE VOLTAGE
EOFF, TURN-OFF ENERGY LOSS (µJ)
EON , TURN-ON ENERGY LOSS (µJ)
TJ = 150oC, VGE = 10V
TJ = 150oC, VGE = 15V
TJ = 25oC, VGE = 10V
TJ = 25oC, VGE = 15V
400
0
1
3
5
7
9
11
13
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4
20
15
40
30
TC = 150oC
TC = -55oC
20
TC = 25oC
10
0
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 15V
1
0
1000
RG = 50Ω, L = 2mH, VCE = 480V
800
14
15
2
3
4
5
6
7
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
8
FIGURE 6. COLLECTOR TO EMITTER ON STATE VOLTAGE
1600
1200
13
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
DUTY CYCLE < 0.5%, VGE = 10V
0
12
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
TC = -55oC
40
tSC
ICE, COLLECTOR TO EMITTER CURRENT (V)
30
100
VCE = 360V, RG = 50Ω, TJ = 125oC
ISC, PEAK SHORT CIRCUIT CURRENT (A)
fMAX, OPERATING FREQUENCY (kHz)
400
Unless Otherwise Specified (Continued)
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
Typical Performance Curves
RG = 50Ω, L = 2mH, VCE = 480V
800
TJ = 150oC, VGE = 10V and 15V
600
400
200
TJ = 25oC, VGE = 10V and 15V
0
1
3
7
13
5
9
11
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
15
HGTP7N60B3D, HGT1S7N60B3DS
Typical Performance Curves
140
RG = 50Ω, L = 2mH, VCE = 480V
RG = 50Ω, L = 2mH, VCE = 480V
120
50
TJ = 150oC, VGE = 10V
40
TJ = 25oC, VGE = 10V
TJ = 25oC, VGE = 15V
30
20
10
trI , RISE TIME (ns)
tdI , TURN-ON DELAY TIME (ns)
60
Unless Otherwise Specified (Continued)
TJ = 150oC, VGE = 15V
1
3
7
5
100
TJ = 150oC, VGE = 10V
80
TJ = 25oC, VGE = 10V
60
40
20
9
13
11
0
15
TJ = 25oC and 150oC, VGE = 15V
1
ICE , COLLECTOR TO EMITTER CURRENT (A)
120
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
200
TJ = 150oC, VGE = 15V
TJ = 150oC, VGE = 10V
150
TJ = 25oC, VGE = 15V
3
5
7
11
13
TJ = 150oC, VGE = 10V and 15V
80
40
15
1
15
VGE,GATE TO EMITTER VOLTAGE (V)
16
TC = 150oC
TC = -55oC
10
8
12
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
5
5
7
9
11
13
15
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
TC = 25oC
8
3
ICE , COLLECTOR TO EMITTER CURRENT (A)
DUTY CYCLE = < 0.5%
PULSE DURATION = 250µs
VCE = 10V
6
15
TJ = 25oC, VGE = 10V and 15V
9
24
0
13
60
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
32
11
100
ICE , COLLECTOR TO EMITTER CURRENT (A)
40
9
RG = 50Ω, L = 2mH, VCE = 480V
TJ = 25oC, VGE = 10V
50
1
ICE, COLLECTOR TO EMITTER CURRENT (A)
7
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
RG = 50Ω, L = 2mH, VCE = 480V
100
5
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
250
3
14
Ig(REF) = 0.758mA, RL = 86Ω, TC = 25oC
12
VCE = 200V
VCE = 600V
9
VCE = 400V
6
3
0
0
4
8
12
16
20
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
24
28
HGTP7N60B3D, HGT1S7N60B3DS
Typical Performance Curves
Unless Otherwise Specified (Continued)
1200
FREQUENCY = 1MHz
C, CAPACITANCE (pF)
1000
CIES
800
600
400
COES
200
CRES
0
0
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ZθJC , NORMALIZED THERMAL RESPONSE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
100
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
t1
PD
10-1
t2
SINGLE PULSE
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
30
40
TJ = 25oC, dIEC/dt = 200A/µs
trr
150oC
tr, RECOVERY TIMES (ns)
IEC, EMITTER TO COLLECTOR CURRENT (A)
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
-55oC
10
5
25oC
1
0.5
25
20
ta
15
tb
10
5
1.0
1.5
2.0
2.5
3.0
VEC, EMITTER TO COLLECTOR VOLTAGE (V)
FIGURE 17. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
6
3.5
1
2
3
4
5
6
8
IEC, FORWARD CURRENT (A)
FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT
10
HGTP7N60B3D, HGT1S7N60B3DS
Test Circuit and Waveforms
L = 2mH
90%
RHRD660
10%
VGE
EON
EOFF
RG = 50Ω
VCE
+
-
90%
VDD = 480V
ICE
10%
td(OFF)I
trI
tfI
td(ON)I
FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 20. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2 ; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 20.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC .
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 20. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
7
ECCOSORBD™ is a Trademark of Emerson and Cumming, Inc.