HGTG20N60C3D Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. File Number 4494.2 Features • 45A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode Packaging JEDEC STYLE TO-247 E C G Formerly developmental type TA49179. Ordering Information PART NUMBER PACKAGE HGTG20N60C3D TO-247 BRAND G20N60C3D NOTE: When ordering, use the entire part number. Symbol C G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTG20N60C3D Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG20N60C3D UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 45 20 300 ±20 ±30 20A at 600V 164 1.32 -55 to 150 260 4 10 A A A V V W W/oC oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 10Ω. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA BVCES ICES VCE(SAT) VGE(TH) TEST CONDITIONS MIN TYP MAX UNITS 600 - - V - - 250 µA - - 5.0 mA - 1.4 1.8 V - 1.5 1.9 V 3.4 4.8 6.3 V - - ±250 nA VCE = 480V 120 - - A VCE = 600V 20 - - A ICE = IC110, VCE = 0.5 BVCES - 8.4 - V ICE = IC110 VCE = 0.5 BVCES VGE = 15V - 91 110 nC VGE = 20V - 122 145 nC - 28 32 ns - 24 28 ns - 151 210 ns - 55 98 ns - 500 550 µJ - 500 700 µJ IC = 250µA, VGE = 0V VCE = BVCES IC = IC110 VGE = 15V IC = 250µA, VCE = VGE IGES VGE = ±20V SSOA TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100µH Gate to Emitter Plateau Voltage VGEP On-State Gate Charge QG(ON) Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF 2 TC = 25oC TC = 150oC TC = 25oC TC = 150oC IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10Ω L = 1mH Test Circuit (Figure 19) HGTG20N60C3D TC = 25oC, Unless Otherwise Specified (Continued) Electrical Specifications PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF Diode Forward Voltage VEC Diode Reverse Recovery Time trr Thermal Resistance Junction To Case RθJC TEST CONDITIONS MIN TYP MAX UNITS - 28 32 ns - 24 28 ns - 280 450 ns - 108 210 ns - 1.0 1.1 mJ - 1.2 1.7 mJ IEC = 20A - 1.5 1.9 V IEC = 20A, dIEC/dt = 200A/µs - - 55 ns IEC = 2A, dIEC/dt = 200A/µs - 32 47 ns IGBT - - 0.76 oC/W Diode - - 1.2 oC/W IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 10Ω L = 1mH Test Circuit (Figure 19) NOTES: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Unless Otherwise Specified ICE , DC COLLECTOR CURRENT (A) 50 VGE = 15V 40 30 20 10 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 3 150 ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 140 TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100µH 120 100 80 60 40 20 0 0 100 200 300 400 500 600 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 700 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA HGTG20N60C3D TJ = 150oC, RG = 10Ω, L = 1mH, V CE = 480V 100 TC 75oC 75oC 110oC 110oC VGE 15V 10V 15V 10V 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.76oC/W, SEE NOTES 1 2 10 5 40 20 14 12 400 ISC 10 350 8 300 6 250 4 2 10 11 TC = 25oC TC = 150oC 40 20 0 2 4 6 8 10 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) 80 0 DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250µs 250 TC = 25oC 200 150 TC = -55oC TC = 150oC 100 50 0 0 2.0 1.5 1.0 0.5 TJ = 25oC, TJ = 150oC, VGE = 15V 30 35 10 15 20 25 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 4 2 3 4 5 6 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 40 EOFF, TURN-OFF ENERGY LOSS (mJ) EON , TURN-ON ENERGY LOSS (mJ) TJ = 25oC, TJ = 150oC, VGE = 10V 2.5 5 1 3.0 RG = 10Ω, L = 1mH, VCE = 480V 3.5 0 150 15 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 3.0 14 300 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 4.0 13 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME DUTY CYCLE <0.5%, VGE = 10V PULSE DURATION = 250µs 60 12 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT TC = -55oC 200 tSC ICE , COLLECTOR TO EMITTER CURRENT (A) 100 450 VCE = 360V, RG = 10Ω, TJ = 125oC ISC , PEAK SHORT CIRCUIT CURRENT (A) Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX , OPERATING FREQUENCY (kHz) Typical Performance Curves RG = 10Ω, L = 1mH, VCE = 480V 2.5 2.0 TJ = 150oC; VGE = 10V OR 15V 1.5 1.0 TJ = 25oC; VGE = 10V OR 15V 0.5 0 5 10 15 20 25 30 35 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 40 HGTG20N60C3D Typical Performance Curves 200 RG = 10Ω, L = 1mH, VCE = 480V 45 40 TJ = 25oC, TJ = 150oC, VGE = 10V 35 30 25 150 100 75 50 0 5 10 15 20 25 30 35 TJ = 25oC, TJ = 150oC, VGE = 10V 125 25 TJ = 25oC, TJ = 150oC, VGE = 15V 20 RG = 10Ω, L = 1mH, VCE = 480V 175 trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) 50 Unless Otherwise Specified (Continued) 40 TJ = 25oC and TJ = 150oC, VGE = 15V 5 10 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 120 RG = 10Ω, L = 1mH, VCE = 480V 275 110 250 100 225 TJ = 150oC, VGE = 10V, VGE = 15V 200 TJ = 25oC, VGE = 10V, VGE = 15V 175 50 40 15 20 25 30 35 40 TJ = 25oC, VGE = 10V OR 15V 5 10 VGE, GATE TO EMITTER VOLTAGE (V) ICE , COLLECTOR TO EMITTER CURRENT (A) 16 DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250µs 250 TC = -55oC 200 TC = 150oC 100 TC = 25oC 50 7 8 9 10 11 12 13 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 13. TRANSFER CHARACTERISTIC 5 14 25 30 35 40 15 IG (REF) = 1mA, RL = 15Ω, TC = 25oC 14 12 10 VCE = 600V 8 VCE = 200V 6 VCE = 400V 4 2 0 6 20 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT 300 5 15 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 0 40 TJ = 150oC, VGE = 10V OR VGE = 15V ICE , COLLECTOR TO EMITTER CURRENT (A) 150 35 RG = 10Ω, L = 1mH, VCE = 480V 70 125 10 30 80 60 5 25 90 150 100 20 FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 300 15 ICE , COLLECTOR TO EMITTER CURRENT (A) 0 10 20 30 40 50 60 70 80 Qg, GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS 90 100 HGTG20N60C3D Typical Performance Curves Unless Otherwise Specified (Continued) 5 FREQUENCY = 1MHz CIES C, CAPACITANCE (nF) 4 3 2 COES 1 CRES 0 0 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) ZθJC , NORMALIZED THERMAL RESPONSE FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 100 0.5 0.2 10-1 0.1 0.05 0.02 10-2 0.01 t1 SINGLE PULSE DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 10-3 -5 10 10-4 10-3 10-2 10-1 PD t2 101 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 45 90 80 70 TC = -55oC 60 50 40 TC = 25oC 30 20 TC = 150oC 10 0 trr TC = 25oC, dIEC/dt = 200A/µs 40 tr, RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) 100 0 0.5 1.0 1.5 2.0 30 25 ta 20 tb 15 10 2.5 VEC , FORWARD VOLTAGE (V) FIGURE 17. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP 6 35 3.0 5 0 5 10 15 20 25 IEC , FORWARD CURRENT (A) FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT 30 HGTG20N60C3D Test Circuit and Waveforms HGTG20N60C3D 90% 10% VGE EON EOFF VCE L = 1mH 90% RG = 10Ω + - ICE VDD = 480V FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT 10% td(OFF)I trI tfI td(ON)I FIGURE 20. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2 ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 20. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 20. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 ECCOSORBD is a Trademark of Emerson and Cumming, Inc.