ETC JAN2N3739

This documentation process conversion measures necessary to
comply with this revision shall be completed by 30 October 1999.
INCH-POUND
MIL-PRF-19500/402C
30 August 1999
SUPERSEDING
MIL-S-19500/402B
8 April 1993
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
TYPE 2N3739
JAN, JANTX AND JANTXV
This specification is approved for use by all Departments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-66)
1.3 Maximum ratings.
Types
VCBO
VCEO
VEBO
IB
IC
TSTG and TJ
RJC
W
V dc
V dc
V dc
A dc
A dc
C
C/W
10
325
300
6.0
0.5
1.0
-55 to +200
7.5
PT 1/
PT 2/
TC = +25C
TC = +100C
W
20
2N3739
1/ Derate linearly, 0.114 W/C for TC +25C.
2/ Derate linearly, 0.100 W/C for TC +100C.
1.4 Primary electrical characteristics at TA = 25C.
Limit
hFE1 1/
hFE3 1/
VBE
VCE = 10 V dc VCE = 10 V dc VCE = 10 V dc
IC = 10 mA dc IC = 100 mA dc IC = 100 mA dc
Min
Max
30
40
200
VCE(SAT)
IC = 250 mA dc
IB = 25 mA dc
Cobo
|hfe|
VCB = 100 V dc
VCE = 10 V dc
IE = 0 mA dc
IC = 100 mA dc
f = 10 MHz
100 kHzf1 MHz
V dc
V dc
pF
1
2.5
20
1
6
Switching
ton
toff
s
s
1.5
3.5
1/ Pulsed (see 4.5.1)
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street,
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end
of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/402C
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not
include documents cited in other sections of this specification or recommended for additional information or as examples. While
every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified
requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this
document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the
Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Performance Specification Semiconductor Devices, General Specification for.
STANDARD
MILITARY
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense
Automated Printing Sevice, 700 Robbins Avenue, Building 4D (DPM-DODSSP), Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for
related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,
however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for
listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.4).
3.2 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500, and as specified herein.
3.2.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein.
3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical characteristics are as specified in 1.3,
1.4 and table I.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.
3.4 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-19500.
3.5 Interface requirements and physical dimensions. The Interface requirements, and physical dimensions shall be as specified
in MIL-PRF-19500, and figure 1 herein.
3.6 Marking. Devices shall be marked in accordance with MIL-PRF-19500.
2
MIL-PRF-19500/402C
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|Symbol
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| CD
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| CH
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| HR
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| HT
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| HR1
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| LD
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| LL
| L1
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| MHD
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| MHS
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| PS
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| PS1
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| S
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| Notes
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| T-5A
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| Min
| Max
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| .620
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| .250 | .340
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| .350
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| .050 | .075
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| .115 | .145
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| .028 | .034
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| .360 | .500
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| .050
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| .142 | .152
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| .958 | .962
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| .190 | .210
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| .093 | .107
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| .570 | .590
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1, 2, 5, 7
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|Note
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| 4
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|4, 6
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| 6
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| 4
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| 3
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| 3
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Inches
.028
.034
.050
.075
.093
.107
.115
.142
.145
.152
.190
.210
1.
2.
3.
4.
5.
6.
7.
mm
0.71
0.86
1.27
1.91
2.36
2.72
2.92
3.61
3.68
3.86
4.83
5.33
Inches
.250
.340
.350
.360
.470
.50
.570
.590
.620
.958
.962
mm
6.35
8.64
8.89
9.14
11.94
12.70
14.48
14.99
15.75
24.33
24.43
Dimensions are in inches.
Metric equivalents are given for general information only.
These dimensions should be measured at points .050 inch (1.27 mm) +.005 inch (0.13 mm) -.000 inch (0.00 mm) below
seating plane. When gauge is not used, measurement will be made at the seating plane.
Two places.
The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a
.930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch
(0.15 mm) convex overall.
Lead diameter shall not exceed twice LD within L1.
Lead designation, depending on device type, shall be as follows:
Lead number
1
2
Case
Bipolar transistor
Emitter
Base
Collector
FIGURE 1. Physical dimensions. (Similar to TO-66).
3
MIL-PRF-19500/402C
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
Qualification inspection (see 4.2).
b.
Screening (see 4.3)
c.
Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
4.3 Screening (JANTX AND JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500 (table IV), and as
specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of
table I herein shall not be acceptable.
Screen (see table IV of
MIL-PRF-19500
Measurement
JANTX and JANTXV levels only
9
Not applicable
11
hFE2 and ICBO1
12
See 4.3.1
13
Subgroup 2 of table I herein, ICBO1 = 100% of
initial value or 10 A dc, whichever is greater
hFE2 = ±20% of initial value
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows:
2N3739 - - - - VCB 50 V dc, TJ = +162.5C ±12.5C
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein.
Group A inspection shall be performed on each sublot.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup
testing in table VIb (JAN, JANTX and JANTXV), of MIL-PRF-19500 and as follows. Electrical measurements (end points) shall be
in accordance with table I, subgroup 2 and delta requirements shall be in accordance with 4.5.2 herein.
4.4.2.1 Group B inspection, table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500.
Subgroup
B3
B4
B6
Method
1037
1026
Conditions
For solder die attach: VCB 10 V dc, 2,000 cycles. TA 35C
For eutectic die attach: VCB 10 V dc, TA 35C adjust PT to achieve TJ = 150C min.
Bond pull condition (see figure 6)
Not applicable
4
MIL-PRF-19500/402C
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup
testing in appendix E, table VII of MIL-PRF-19500 and as follows. Electrical measurements (end points) shall be in accordance
with table I, subgroup 2 and delta requirements shall be in accordance with 4.5.2, herein.
4.4.3.1 Group C inspection, appendix E, table VII of MIL-PRF-19500.
Subgroup
C6
Method
1037
1026
Conditions
For solder die attach: VCB 10 V dc, 6,000 cycles. TA 35C
For eutectic die attach: VCB 10 V dc, TA 35C adjust PT to achieve TJ = 150C min.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows:
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Delta requirements. Delta requirements shall be as specified below:
Step
Inspection
1
Collector to base
cutoff current
2
Forward-current
transfer ratio
Method
3036
3076
MIL-STD-750
Conditions
Bias condition D;
VCB = 325 V dc
Symbol
VCE = 10 V dc;
IC = 100 mA dc
pulsed (see 4.5.1)
Limit 1/ 2/
ICBO
100 percent or 10 A dc,
whichever is greater
hFE1
25
percent change
from initial recorded value.
1/ The electrical measurements for table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500 are as follows:
a. Subgroups 3 and 6, 4.5.2 herein, steps 1 and 2.
2/ The electrical measurements for table VII of MIL-PRF-19500 are as follows:
a. Subgroup 6, see 4.5.2 herein, steps 1 and 2.
5
Unit
MIL-PRF-19500/402C
TABLE I. Group A inspection.
MIL-STD-750
Limits
Symbol
Inspection 1/
Method
Conditions
Unit
Min
Max
Subgroup 1
Visual and mechanical
examination
2071
Subgroup 2
Breakdown voltage,
collector to emitter
3011
Bias condition D, IC = 5.0 mA dc
V(BR)CEO
Collector to base
cutoff current
3036
Bias condition D, VCB = 325 V dc
ICBO1
0.1
mA dc
Collector to emitter
cutoff current
3041
Bias condition A, VCE = 300 V dc,
VBE = 1.5 V dc
ICEX
0.5
mA dc
Emitter to base
cutoff current
3061
Bias condition D, VEB = 6.0 V dc
IEBO
0.1
mA dc
Base to emitter,
non-saturated voltage
3066
Test condition B, VCE = 10 V dc,
IC = 100 mA dc;
pulsed (see 4.5.1)
VBE
1
V dc
Collector to emitter
voltage (saturated)
3071
IC = 100 mA dc; IB = 10 mA dc;
pulsed (see 4.5.1)
VCE(sat)1
0.75
V dc
Collector to emitter
voltage (saturated)
3071
IC = 250 mA dc; IB = 25 mA dc;
pulsed (see 4.5.1)
VCE(sat)2
2.5
V dc
Forward-current
transfer ratio
3076
VCE = 10 V dc; IC = 10 mA dc;
pulsed (see 4.5.1)
hFE1
30
Forward-current
transfer ratio
3076
VCE = 10 V dc; IC = 50 mA dc;
pulsed (see 4.5.1)
hFE2
30
Forward-current
transfer ratio
3076
VCE = 10 V dc; IC = 100 mA dc;
pulsed (see 4.5.1)
hFE3
40
Forward-current
transfer ratio
3076
VCE = 10 V dc; IC = 250 mA dc;
pulsed (see 4.5.1)
hFE4
25
Forward-current
transfer ratio
3076
VCE = 10 V dc; IC = 500 mA dc;
pulsed (see 4.5.1)
hFE5
10
See footnotes at end of table.
6
300
V dc
200
MIL-PRF-19500/402C
TABLE I. Group A inspection - Continued.
MIL-STD-750
Limits
Symbol
Inspection 1/
Method
Conditions
Unit
Min
Max
Subgroup 3
TA = +150C
High-temperature
operation:
Collector to base
cutoff current
3036
Bias condition D, VCB = 325 V dc
ICBO2
1.0
mA dc
TA = -55C
Low-temperature
operation:
VCE = 10 V dc; IC = 100 mA dc;
pulsed (see 4.5.1)
hFE6
Turn-on time
VCC = 150 V dc; IC = 500 mA dc;
IB = 50 mA dc (see figure 2)
ton
1.5
s
Turn-off time
VCC = 150 V dc; IC = 500 mA dc;
IB1 = IB2 = 50 mA dc
(see figure 2)
toff
3.5
s
Forward-current
transfer ratio
3076
15
Subgroup 4
Pulse response:
Magnitude of common emitter,
small-signal short-circuit
forward-current transfer ratio
3306
VCE = 10 V dc; IC = 100 mA dc;
f = 10 MHz
|hFE|
1.0
6
Small-signal short-circuit
forward-current transfer ratio
3206
VCE = 20 V dc; IC = 100 mA dc
hfe
35
300
Open circuit output
capacitance
3236
VCB = 100 V dc; IE = 0 mA dc;
100 kHz f 1 MHz
Cobo
3051
TC = +25C; t = 1 s; 1 cycle;
(see figure 3)
Subgroup 5
Safe operating area
(continuous dc)
Test 1
VCE = 80 V dc; IC = 250 mA dc
Test 2
VCE = 290 V dc; IC = 6 mA dc
See footnotes at end of table.
7
20
pF
MIL-PRF-19500/402C
TABLE I. Group A inspection - Continued.
MIL-STD-750
Method
Conditions
Subgroup 5 - Continued
Safe operating area
(switching)
Limits
Symbol
Inspection 1/
3053
Load condition C (unclamped
inductive load) (see figure 4)
TA = +25C; duty cycle 10%;
Rs = 1; tr = tf 500 ns
Test 1
tp approx 8 ms (Vary to obtain IC);
RBB1 = 100; VBB1 10 V dc;
RBB2 = ; VBB2 = 0 V dc; VCC
100 V dc; IC = 500 mA dc; The
coil used shall provide a minimum
inductance of 3.5 mH at 500 mA
with max. dc resistance of 0.5
ohm (For reference only: Acme
T58220, or equivalent)
Test 2
tp approx 8 ms (Vary to obtain
IC); RBB1 = 100; VBB1 10 V dc;
RBB2 = ; VBB2 = 0 V dc; VCC
100 V dc; IC = 100 mA dc; The
coil used shall provide a minimum
inductance of 25 mH at 100 mA
with max. dc resistance of 1.0
ohm (For reference only: Triad
C-48u, centertapped, or
equivalent.)
Safe operating area
(switching)
Electrical measurements
TA = +25C; duty cycle 10%;
tp approx 8 ms (Vary to obtain IC)
VCC 100 V dc; IC = 1 A dc;
Rs = 1; clamp voltage = 300 V dc
See table I, subgroup 2
1/ For sampling plan, see MIL-PRF-19500.
8
Unit
Min
Max
MIL-PRF-19500/402C
NOTES:
1. The rise time (tr) and fall time (tf) of the applied pulse shall be each 20 ns; duty cycle 1 percent; generator source
impedance shall be 50 ohms.
2. Output sampling oscilloscope: Zin 100 k; Cin 50 pF; rise time 2.0 ns.
FIGURE 2. Pulse response test circuit.
9
MIL-PRF-19500/402C
FIGURE 3. Maximum safe operating area graph (continuous dc).
10
MIL-PRF-19500/402C
FIGURE 4. Safe operating area for switching between saturation and cutoff (unclamped inductive load).
11
MIL-PRF-19500/402C
NOTES:
1. Either a clamping circuit or clamping diode may be used.
2. The coil used shall provide a minimum inductance of 25 mH at 1 A with a maximum
dc resistance of 1 ohm. For reference only: Triad C-48u (center-tapped), or equivalent (see 4.4.5)
3. RS 1 ohm, 12 W, 1% tolerance max., (noninductive).
Procedure:
1. With switch Sl closed, set the specified test conditions.
2. Open S1. Device fails if clamp voltage not reached and maintained until the current returns to zero.
3. Perform specified endpoint tests.
FIGURE 5. Clamped inductive sweep test circuit.
12
MIL-PRF-19500/402C
FIGURE 6. Minimum destructive bond-pull breaking-force vs. wire diameter for aluminum wire bonds.
13
MIL-PRF-19500/402C
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual
packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain
requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the
Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the
managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Issue of DODISS to be cited in the solicitation and, if required, the specific issue of individual documents referenced (see 2.2.1).
b. Lead finish as specified (see 3.2.1).
c. Type designation and product assurance level.
d. Packing requirements (see 5.1)
6.3 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the
previous issue, due to the extensiveness of the changes.
6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of
award of contract, qualified for inclusion in Qualified Manufacturers List QML-19500 whether or not such products have actually
been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to
arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be
eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to
qualification of products may be obtained from Defense Supply Center Columbus, ATTN: DSCC-VQE, 3990 East Broad Street,
Columbus, OH 43216-5000.
CONCLUDING MATERIAL
Custodians:
Army - CR
Navy - EC
Air Force - 11
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2153)
Review activities:
Army - AR, AV, MI, SM
Navy - AS, CG, MC, SH
Air Force - 13, 19
14
MIL-PRF-19500/402C
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the
referenced document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
MIL-PRF-19500/402C
2. DOCUMENT DATE
3. DOCUMENT TITLE Semiconductor Device, Transistor, NPN, Silicon, Power
Types 2N3739, JAN, JANTX and JANTXV
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as
needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
c.
ADDRESS (Include Zip Code)
b. ORGANIZATION
d. TELEPHONE (Include Area Code)
Commercial
DSN
FAX
EMAIL
7. DATE SUBMITTED
8. PREPARING ACTIVITY
a. Point of Contact
Al Barone
c. ADDRESS
Defense Supply Center Columbus
ATTN: DSCC-VAC
Columbus, OH 43216-5000
DD Form 1426, FEB 1999 (EG)
d. TELEPHONE (Include Area Code) Commercial
DSN 850-0510
FAX (614) 692-6939
EMAIL [email protected]
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman Road, Suite 2533,
Fort Belvoir, Virginia 22060-6221
Telephone (703) 767-6888 DSN 427-6888
Previous editions are obsolete
15