This documentation process conversion measures necessary to comply with this revision shall be completed by 30 October 1999. INCH-POUND MIL-PRF-19500/402C 30 August 1999 SUPERSEDING MIL-S-19500/402B 8 April 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPE 2N3739 JAN, JANTX AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-66) 1.3 Maximum ratings. Types VCBO VCEO VEBO IB IC TSTG and TJ RJC W V dc V dc V dc A dc A dc C C/W 10 325 300 6.0 0.5 1.0 -55 to +200 7.5 PT 1/ PT 2/ TC = +25C TC = +100C W 20 2N3739 1/ Derate linearly, 0.114 W/C for TC +25C. 2/ Derate linearly, 0.100 W/C for TC +100C. 1.4 Primary electrical characteristics at TA = 25C. Limit hFE1 1/ hFE3 1/ VBE VCE = 10 V dc VCE = 10 V dc VCE = 10 V dc IC = 10 mA dc IC = 100 mA dc IC = 100 mA dc Min Max 30 40 200 VCE(SAT) IC = 250 mA dc IB = 25 mA dc Cobo |hfe| VCB = 100 V dc VCE = 10 V dc IE = 0 mA dc IC = 100 mA dc f = 10 MHz 100 kHzf1 MHz V dc V dc pF 1 2.5 20 1 6 Switching ton toff s s 1.5 3.5 1/ Pulsed (see 4.5.1) Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/402C 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Performance Specification Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense Automated Printing Sevice, 700 Robbins Avenue, Building 4D (DPM-DODSSP), Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.4). 3.2 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500, and as specified herein. 3.2.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical characteristics are as specified in 1.3, 1.4 and table I. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.4 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-19500. 3.5 Interface requirements and physical dimensions. The Interface requirements, and physical dimensions shall be as specified in MIL-PRF-19500, and figure 1 herein. 3.6 Marking. Devices shall be marked in accordance with MIL-PRF-19500. 2 MIL-PRF-19500/402C | |Symbol | | | | CD | | CH | | HR | | HT | | HR1 | | LD | | LL | L1 | | MHD | | MHS | | PS | | PS1 | | S | | Notes | | T-5A | | | Min | Max | | | | .620 | | | .250 | .340 | | | | .350 | | | .050 | .075 | | | .115 | .145 | | | .028 | .034 | | | .360 | .500 | | .050 | | | .142 | .152 | | | .958 | .962 | | | .190 | .210 | | | .093 | .107 | | | .570 | .590 | | 1, 2, 5, 7 | |Note | | | | | | | | | | | | 4 | |4, 6 | | | 6 | | 4 | | | | 3 | | 3 | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | Inches .028 .034 .050 .075 .093 .107 .115 .142 .145 .152 .190 .210 1. 2. 3. 4. 5. 6. 7. mm 0.71 0.86 1.27 1.91 2.36 2.72 2.92 3.61 3.68 3.86 4.83 5.33 Inches .250 .340 .350 .360 .470 .50 .570 .590 .620 .958 .962 mm 6.35 8.64 8.89 9.14 11.94 12.70 14.48 14.99 15.75 24.33 24.43 Dimensions are in inches. Metric equivalents are given for general information only. These dimensions should be measured at points .050 inch (1.27 mm) +.005 inch (0.13 mm) -.000 inch (0.00 mm) below seating plane. When gauge is not used, measurement will be made at the seating plane. Two places. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. Lead diameter shall not exceed twice LD within L1. Lead designation, depending on device type, shall be as follows: Lead number 1 2 Case Bipolar transistor Emitter Base Collector FIGURE 1. Physical dimensions. (Similar to TO-66). 3 MIL-PRF-19500/402C 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3) c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.3 Screening (JANTX AND JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500 (table IV), and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500 Measurement JANTX and JANTXV levels only 9 Not applicable 11 hFE2 and ICBO1 12 See 4.3.1 13 Subgroup 2 of table I herein, ICBO1 = 100% of initial value or 10 A dc, whichever is greater hFE2 = ±20% of initial value 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: 2N3739 - - - - VCB 50 V dc, TJ = +162.5C ±12.5C 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Group A inspection shall be performed on each sublot. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIb (JAN, JANTX and JANTXV), of MIL-PRF-19500 and as follows. Electrical measurements (end points) shall be in accordance with table I, subgroup 2 and delta requirements shall be in accordance with 4.5.2 herein. 4.4.2.1 Group B inspection, table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500. Subgroup B3 B4 B6 Method 1037 1026 Conditions For solder die attach: VCB 10 V dc, 2,000 cycles. TA 35C For eutectic die attach: VCB 10 V dc, TA 35C adjust PT to achieve TJ = 150C min. Bond pull condition (see figure 6) Not applicable 4 MIL-PRF-19500/402C 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table VII of MIL-PRF-19500 and as follows. Electrical measurements (end points) shall be in accordance with table I, subgroup 2 and delta requirements shall be in accordance with 4.5.2, herein. 4.4.3.1 Group C inspection, appendix E, table VII of MIL-PRF-19500. Subgroup C6 Method 1037 1026 Conditions For solder die attach: VCB 10 V dc, 6,000 cycles. TA 35C For eutectic die attach: VCB 10 V dc, TA 35C adjust PT to achieve TJ = 150C min. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Delta requirements. Delta requirements shall be as specified below: Step Inspection 1 Collector to base cutoff current 2 Forward-current transfer ratio Method 3036 3076 MIL-STD-750 Conditions Bias condition D; VCB = 325 V dc Symbol VCE = 10 V dc; IC = 100 mA dc pulsed (see 4.5.1) Limit 1/ 2/ ICBO 100 percent or 10 A dc, whichever is greater hFE1 25 percent change from initial recorded value. 1/ The electrical measurements for table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroups 3 and 6, 4.5.2 herein, steps 1 and 2. 2/ The electrical measurements for table VII of MIL-PRF-19500 are as follows: a. Subgroup 6, see 4.5.2 herein, steps 1 and 2. 5 Unit MIL-PRF-19500/402C TABLE I. Group A inspection. MIL-STD-750 Limits Symbol Inspection 1/ Method Conditions Unit Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Breakdown voltage, collector to emitter 3011 Bias condition D, IC = 5.0 mA dc V(BR)CEO Collector to base cutoff current 3036 Bias condition D, VCB = 325 V dc ICBO1 0.1 mA dc Collector to emitter cutoff current 3041 Bias condition A, VCE = 300 V dc, VBE = 1.5 V dc ICEX 0.5 mA dc Emitter to base cutoff current 3061 Bias condition D, VEB = 6.0 V dc IEBO 0.1 mA dc Base to emitter, non-saturated voltage 3066 Test condition B, VCE = 10 V dc, IC = 100 mA dc; pulsed (see 4.5.1) VBE 1 V dc Collector to emitter voltage (saturated) 3071 IC = 100 mA dc; IB = 10 mA dc; pulsed (see 4.5.1) VCE(sat)1 0.75 V dc Collector to emitter voltage (saturated) 3071 IC = 250 mA dc; IB = 25 mA dc; pulsed (see 4.5.1) VCE(sat)2 2.5 V dc Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 10 mA dc; pulsed (see 4.5.1) hFE1 30 Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 50 mA dc; pulsed (see 4.5.1) hFE2 30 Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 100 mA dc; pulsed (see 4.5.1) hFE3 40 Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 250 mA dc; pulsed (see 4.5.1) hFE4 25 Forward-current transfer ratio 3076 VCE = 10 V dc; IC = 500 mA dc; pulsed (see 4.5.1) hFE5 10 See footnotes at end of table. 6 300 V dc 200 MIL-PRF-19500/402C TABLE I. Group A inspection - Continued. MIL-STD-750 Limits Symbol Inspection 1/ Method Conditions Unit Min Max Subgroup 3 TA = +150C High-temperature operation: Collector to base cutoff current 3036 Bias condition D, VCB = 325 V dc ICBO2 1.0 mA dc TA = -55C Low-temperature operation: VCE = 10 V dc; IC = 100 mA dc; pulsed (see 4.5.1) hFE6 Turn-on time VCC = 150 V dc; IC = 500 mA dc; IB = 50 mA dc (see figure 2) ton 1.5 s Turn-off time VCC = 150 V dc; IC = 500 mA dc; IB1 = IB2 = 50 mA dc (see figure 2) toff 3.5 s Forward-current transfer ratio 3076 15 Subgroup 4 Pulse response: Magnitude of common emitter, small-signal short-circuit forward-current transfer ratio 3306 VCE = 10 V dc; IC = 100 mA dc; f = 10 MHz |hFE| 1.0 6 Small-signal short-circuit forward-current transfer ratio 3206 VCE = 20 V dc; IC = 100 mA dc hfe 35 300 Open circuit output capacitance 3236 VCB = 100 V dc; IE = 0 mA dc; 100 kHz f 1 MHz Cobo 3051 TC = +25C; t = 1 s; 1 cycle; (see figure 3) Subgroup 5 Safe operating area (continuous dc) Test 1 VCE = 80 V dc; IC = 250 mA dc Test 2 VCE = 290 V dc; IC = 6 mA dc See footnotes at end of table. 7 20 pF MIL-PRF-19500/402C TABLE I. Group A inspection - Continued. MIL-STD-750 Method Conditions Subgroup 5 - Continued Safe operating area (switching) Limits Symbol Inspection 1/ 3053 Load condition C (unclamped inductive load) (see figure 4) TA = +25C; duty cycle 10%; Rs = 1; tr = tf 500 ns Test 1 tp approx 8 ms (Vary to obtain IC); RBB1 = 100; VBB1 10 V dc; RBB2 = ; VBB2 = 0 V dc; VCC 100 V dc; IC = 500 mA dc; The coil used shall provide a minimum inductance of 3.5 mH at 500 mA with max. dc resistance of 0.5 ohm (For reference only: Acme T58220, or equivalent) Test 2 tp approx 8 ms (Vary to obtain IC); RBB1 = 100; VBB1 10 V dc; RBB2 = ; VBB2 = 0 V dc; VCC 100 V dc; IC = 100 mA dc; The coil used shall provide a minimum inductance of 25 mH at 100 mA with max. dc resistance of 1.0 ohm (For reference only: Triad C-48u, centertapped, or equivalent.) Safe operating area (switching) Electrical measurements TA = +25C; duty cycle 10%; tp approx 8 ms (Vary to obtain IC) VCC 100 V dc; IC = 1 A dc; Rs = 1; clamp voltage = 300 V dc See table I, subgroup 2 1/ For sampling plan, see MIL-PRF-19500. 8 Unit Min Max MIL-PRF-19500/402C NOTES: 1. The rise time (tr) and fall time (tf) of the applied pulse shall be each 20 ns; duty cycle 1 percent; generator source impedance shall be 50 ohms. 2. Output sampling oscilloscope: Zin 100 k; Cin 50 pF; rise time 2.0 ns. FIGURE 2. Pulse response test circuit. 9 MIL-PRF-19500/402C FIGURE 3. Maximum safe operating area graph (continuous dc). 10 MIL-PRF-19500/402C FIGURE 4. Safe operating area for switching between saturation and cutoff (unclamped inductive load). 11 MIL-PRF-19500/402C NOTES: 1. Either a clamping circuit or clamping diode may be used. 2. The coil used shall provide a minimum inductance of 25 mH at 1 A with a maximum dc resistance of 1 ohm. For reference only: Triad C-48u (center-tapped), or equivalent (see 4.4.5) 3. RS 1 ohm, 12 W, 1% tolerance max., (noninductive). Procedure: 1. With switch Sl closed, set the specified test conditions. 2. Open S1. Device fails if clamp voltage not reached and maintained until the current returns to zero. 3. Perform specified endpoint tests. FIGURE 5. Clamped inductive sweep test circuit. 12 MIL-PRF-19500/402C FIGURE 6. Minimum destructive bond-pull breaking-force vs. wire diameter for aluminum wire bonds. 13 MIL-PRF-19500/402C 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Issue of DODISS to be cited in the solicitation and, if required, the specific issue of individual documents referenced (see 2.2.1). b. Lead finish as specified (see 3.2.1). c. Type designation and product assurance level. d. Packing requirements (see 5.1) 6.3 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue, due to the extensiveness of the changes. 6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List QML-19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, ATTN: DSCC-VQE, 3990 East Broad Street, Columbus, OH 43216-5000. CONCLUDING MATERIAL Custodians: Army - CR Navy - EC Air Force - 11 NASA - NA DLA - CC Preparing activity: DLA - CC (Project 5961-2153) Review activities: Army - AR, AV, MI, SM Navy - AS, CG, MC, SH Air Force - 13, 19 14 MIL-PRF-19500/402C STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/402C 2. DOCUMENT DATE 3. DOCUMENT TITLE Semiconductor Device, Transistor, NPN, Silicon, Power Types 2N3739, JAN, JANTX and JANTXV 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) Commercial DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Al Barone c. ADDRESS Defense Supply Center Columbus ATTN: DSCC-VAC Columbus, OH 43216-5000 DD Form 1426, FEB 1999 (EG) d. TELEPHONE (Include Area Code) Commercial DSN 850-0510 FAX (614) 692-6939 EMAIL [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman Road, Suite 2533, Fort Belvoir, Virginia 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete 15