The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 July 1998. INCH-POUND MIL-PRF-19500/498C 27 March 1998 SUPERSEDING MIL-S-19500/498B 5 October 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPE 2N6306, 2N6308, JAN, JANTX AND JANTXV This Specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See 3.3. (Similar to TO-3) 1.3 Maximum ratings. PT TC = +25qC 1/ PT TC = +100qC 1/ VCBO VCEO VEBO IB IC TJ and TSTG W W V dc V dc V dc A dc A dc qC 4.0 4.0 8.0 8.0 -65 to +200 -65 to +200 2N6306 125 62.5 500 250 8.0 2N6308 125 62.5 700 350 8.0 1/ Between TC = +25qC and TC = +175qC , linear derating factor (average) = .833 W/qC . 1.4 Primary electrical characteristics. hFE2 VCE = 5 V dc IC = 3 A dc 2N6306 2N6308 Min Max hFE3 VBE(sat) 1/ VCE = 5 V dc IC = 8 A dc IC = 8 A dc IB = 2/ Min Max Min 15 12 75 60 4 3 Max Min 2.3 2.5 _hfe_ Cobo VCE = 10 V dc IC = 0.3 A dc f = 1 MHz VCB = 10 V dc IE = 0 100 < f < 1 MHz pF ton toff Ps Ps 250 0.6 3.0 5 30 Max VCE(sat) IC = 8 A dc IB = 2 Min V dc Max V dc 5 5 1 IC = 3 A dc IB = 0.6 A dc Min V dc Max V dc 0.8 1.5 Switching 1/ Pulsed (see 4.5.1). 2/ 2N6306 (IB) = 2.0 A dc; 2N6308 (IB) = 2.67 A dc. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/498C Ltr CD CH HR HR1 HT L1 LD LL MHD MHS PS PS1 S Dimensions Inches Millimeters Min Max Min Max .875 22.22 .250 .450 .635 11.43 .495 .525 12.57 13.34 .131 .188 3.33 4.78 .060 .135 1.52 3.43 .050 1.27 .038 .043 0.97 1.09 .312 .500 7.92 12.70 .151 .165 3.84 4.19 1.177 1.197 29.90 30.40 .420 .440 10.67 11.18 .205 .225 5.21 5.72 .655 .675 16.64 17.14 Notes 3 5, 9 5, 9 5 7 4 4, 5 4 Notes: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Body contour is optional within zone defined by CD 4. These dimensions shall be measured at points .050 (1.27 mm) to .055 (1.40 mm) below seating plane. When gauge is not used , measurement shall be made at seating plane. 5. Both terminals. 6. At both ends. 7. Two holes. 8. Terminal 1 is the emitter, terminal 2 is base. The collector shall be electrically connected to the case. 9. LD applies between L1 and LL. Diameter is uncontrolled in L1. 10. In accordance with ANSI Y14.5M, diameters are equivalent to Ix symbology. FIGURE 1. Physical dimensions (similar to T0-3). 2 MIL-PRF-19500/498C 2. APPLICABLE DOCUMENTS 2.1 Government documents. 2.1.1 Specifications, standards and handbooks. The following specifications, standards and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION MILITARY MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of the specification and standard required by contractors in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity.) 2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein (except for associated detail specifications, specification sheets or MS standards), the text of this specification takes precedence. Nothing in this specification, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500, and as specified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF19500. 3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in MIL-PRF-19500, and figure 1 (similar to T0-3) herein. 3.3.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500. 3.4 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in paragraph 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in paragraphs 4.4.2 and 4.4.3. 3.7 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.2 ). 4.VERIFICATION 4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3) c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 3 MIL-PRF-19500/498C 4.3 Screening. Screening shall be in accordance with MIL-PRF-19500 (table IV), and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) 1/ 11 12 13 Measurements JANTX, JANTXV levels Thermal response (see 4.3.2) ICEX1 and hFE3 See 4.3.1 Subgroup 2 of table I herein; 'ICEX1 d 100% of initial value or 500 nA dc, whichever is greater. 'hFE3 d 25% of initial value. 1/ This test shall be performed any time before screen 10. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = room ambient as defined in the general requirements of 4.5 of MIL-STD-750; VCB t 10 V dc; TJ = +162.5qC d 12.5qC. No heat sink or forced air cooling on the devices shall be permitted. 4.3.2 Thermal response 'VBE measurements. The 'VBE measurements shall be performed in accordance with MIL-STD-750, method 3131. The 'VBE conditions (IH and VH) and maximum limit shall be derived by each vendor. The chosen 'VBE measurement and conditions for each device in the qualification lot shall be submitted in the qualification report and a thermal response curve shall be plotted. The chosen 'VBE shall be considered final after the manufacturer has had the opportunity to test five consecutive lots. One hundred percent Safe Operation Area (SOA) testing may be performed in lieu of thermal response testing herein, provided that the appropriate conditions of temperature, time, current, and voltage to achieve die attach integrity are submitted to the qualifying activity. The following parameter measurements shall apply: a. IM measurement - - - - - - - - - - - - - - - - 10 mA. b. VCE measurement voltage - - - - - - - - - - - 20 V (same as VH). c. IH collector heating current - - - - - - - - - 4 A (minimum). d. VH collector-emitter heating voltage - - - - - 20 V (minimum). e. tH heating time - - - - - - - - - - - - - - - 100 ms. f. tMD measurement delay time - - - - - - - - - - 50 Ps to 80 Ps. g. tSW sample window time - - - - - - - - - - - - 10 Ps (maximum). 4.3.3 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131 of MIL-STD-750. The following details shall apply: a. IM measurement - - - - - - - - - - - - - - - - 10 mA. b. VCE measurement voltage - - - - - - - - - - - 15 V. c. IH collector heating current - - - - - - - - - 8 A. d. VH collector-emitter heating voltage - - - - - 15 V. e. tH heating time - - - - - - - - - - - - - - - Stead-state (see MIL-STD-750, method 2131 for definition). f. tMD measurement delay time - - - - - - - - - - 20 Ps (maximum). g. tSW sample window time - - - - - - - - - - - - 10 Ps (maximum). 4 MIL-PRF-19500/498C 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein. 4.4.2.1 Group B inspection, table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup 3 Method Condition 1037 VCB t 10 V dc; 'TJ between cycles t+100qC; ton = toff > 1 minute f 2000 cycles. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table V of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein. Subgroup 6 Method Condition 1037 VCB t 10 V dc; 'TJ between cycles t +100qC; ton = toff 1 minute for 6000 cycles. No heat sink or forced-air cooling on device shall be permitted. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 5.2 Marking. Unless otherwise specified (see 6.2), marking shall be in accordance with MIL-STD-129. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Issue of DODISS to be cited in the solicitation and, if required, the specific issue of individual documents referenced (see 2.2.1). b. Lead finish (see 3.3.1). c. Type designation and product assurance level. d. Packaging requirements (see 5.1). 6.3 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. 6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Products List QPL-19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216. 5 MIL-PRF-19500/498C Inspection 1/ Subgroup 1 Visual and mechanical examination Subgroup 2 Collector to base breakdown voltage 2N6306 2N6308 Collector to emitter cutoff current Method 2071 3011 TABLE I. Group A inspection. MIL-STD-750 Conditions Bias condition D, IC = 100 mA dc; Pulsed (see 4.5.1) Limit Symbol Max Unit ICEO 50 V dc V dc PA dc 5.0 A dc 5.0 5.0 PA dc PA dc 2.3 2.5 V dc V dc 1.3 1.5 V dc V dc 5.0 V dc 0.8 1.5 V dc V dc V(BR)CEO 250 350 3041 2N6306 2N6308 Bias condition D; VCE = 250 V dc VCE = 350 V dc Emitter-base cutoff current 3061 Bias condition D VEB = 8 V dc IEBO Collector to emitter cutoff current 3041 Bias condition A; VBE = 1.5 V dc ICEX1 2N6306 2N6308 Base emitter voltage 3066 2N6306 2N6308 Base emitter voltage Min 3066 VCE = 500 V dc VCE = 700 V dc Test condition A; IC = 8.0 A dc; Pulsed (see 4.5.1) IB = 2.0 A dc IB = 2.67 A dc Test condition B; IC = 3.0 A dc; VCE = 5.0 V dc; Pulsed (see 4.5.1) VBE(sat) VBE(on)2 2N6306 2N6308 Collector to emitter saturated voltage 2N6306 2N6308 Collector to emitter saturated voltage 2N6306 2N6308 Forward-current transfer ratio 3071 IC = 8.0 A dc; Pulsed (see 4.5.1) VCE(sat)1 IB = 2.0 A dc IB = 2.67 A dc 3071 3076 IC = 3.0 A dc; IB = 0.6 A dc; Pulsed (see 4.5.1) VCE = 5 V dc; IC = 3.0 A dc; Pulsed (see 4.5.1) VCE(sat)2 hFE1 2N6306 2N6308 Forward-current transfer ratio 15 12 3076 VCE = 5 V dc; IC = 8.0 A dc; Pulsed (see 4.5.1) 2N6306 2N6308 hFE2 4 3 See footnote at end of table. 6 75 60 MIL-PRF-19500/498C Inspection 1/ Subgroup 2 - Continued. Forward-current transfer ratio 2N6306 2N6308 Method 3076 Small-signal short- circuit forward- current transfer ratio ton 0.6 s toff 3.0 s 3076 VCE = 5.0 V dc IC = 3.0 A dc; Pulsed (see 4.5.1) hFE4 3251 Test condition A except test circuit and pulse requirements in accordance with figure 1. VCC = 125 V dc; IC = 3.0 A dc; IB = 0.6 A dc VCC = 125 V dc; IC = 3.0 A dc; IB1 = 0.6 A dc IB2 = 1.5 A dc 6 5 3306 VCE = 10 V dc; IC = 0.3 A dc; f = 1 MHz _hfe_ 3236 VCB = 10 V dc; IE = 0; 100 kHz < f < 1.0 MHz VCE = 4.0 V dc; IC = 0.5 A dc; f = 1.0 kHz Cobo 3206 Subgroup 5 Safe operating area(dc operation) PA dc ICEX2 Turn-off time Open capacitance(open circuit) 500 hFE3 Bias condition A; VBE = 1.5 V dc VCE = 450 V dc VCE = 650 V dc TA = -55qC Turn-on time Magnitude of common emitter small-signal short-circuit forward- current transfer ratio Unit 3041 2N6306 2N6308 Subgroup 4 Pulse response: transfer ratio Max TA = +150qC Low-temperature operation Forward-current transfer ratio VCE = 5 V dc IC = 0.5 A dc; Pulsed (see 4.5.1) Limits Min 15 12 Subgroup 3 High-temperature operation Collector to emitter cutoff current 2N6306 2N6308 TABLE I. Group A inspection - Continued. MIL-STD-750 Conditions Symbol 3051 Test 1 (Both device types) Test 2 (Both device types) TC = +25qC t = 1 s; 1 cycle; (See figures 2 and 3) VCE = 15.6 V dc; IC = 8 A dc VCE = 37 V dc; IC = 3.4 A dc Test 3 2N6306 2N6308 VCE = 200 V dc; IC = 65 mA dc VCE = 300 V dc; IC = 25 mA dc Electrical measurements table I, group A, subgroup 2 herein Subgroups 6 and 7 Not applicable For sampling plan see MIL-PRF 19500. 7 hfe 5 30 250 5 pF MIL-PRF-19500/498C NOTES: 1. The rise time (tr) and fall time (tf) of the applied pulse shall be each < 2 ns; duty cycle < 1 percent; shall be 50:; pulse width = 30 Ps. 2. Output sampling oscilloscope: ZIN > 20 k:; CIN < 50 pF; rise time < 0.2 ns. FIGURE 2. Pulse response test circuit. 8 generator source impedance MIL-PRF-19500/498C FIGURE 3. Maximum safe operating area graph (continuous dc). 9 MIL-PRF-19500/498C FIGURE 4. Safe operating area for switching between saturation and cutoff (unclamped inductive load). 10 MIL-PRF-19500/498C CONCLUDING MATERIAL Custodians: Air Force - 17 Preparing activity: DLA-CC (Project 5961-1782) Review activities: Air Force - 13, 19, 85, 99 11 MIL-PRF-19500/498C STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/498C 2. DOCUMENT DATE 27 March 1998 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPE 2N6306, 2N6308, JAN, JANTX AND JANTXV 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) Commercial DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus ATTN: DSCC-VAT Columbus, OH 43216-5000 DD Form 1426, OCT 89 b. TELEPHONE Commercial DSN 614-692-0510 850-0510 FAX 614-692-6939 EMAIL [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Quality and Standardization Office 5203 Leesburg Pike, Suite 1403, Falls Church, VA 22041-3466 Telephone (703) 756-2340 DSN 289-2340 Previous editions are obsolete 12