The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 1999 INCH-POUND MIL-PRF-19500/348E 25 July 1999 SUPERSEDING MIL-S-19500/348D 6 October 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N3467, 2N3467L, 2N3468, 2N3468L, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon switching transistors. Four levels of product assurance is provided for the device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See 3.3 (similar to TO-5 and TO-39). 1.3 Maximum ratings. PT 1/ PT 2/ VCBO 2N3467 2N3468 2N3467L 2N3468L VCEO 2N3467 2N3467L 2N3468 2N3468L VEBO IC Top and TSTG TA = +25°C TA = +25°C W W V dc V dc V dc V dc V dc A dc °C 1.0 5.0 40 50 40 50 5.0 1.0 -55 to +175 1/ Derate linearly at 5.71 mW/°C above TA = +25°C. 2/ Derate linearly at 28.6 mW/°C above TC = +25°C. 1.4 Primary electrical characteristics. Limits hFE2 1/ hFE3 1/ VCE(sat) VCE = 1.0 V dc IC = 500 mA dc VCE = 1.0 V dc IC = 500 mA dc VCE = 5.0 V dc IC = 1.0 A dc VCE = 5.0 V dc IC = 1.0 A dc 2N3467 2N3467L 2N3468 2N3468L 2N3467 2N3467L 2N3468 2N3468L 40 120 25 75 40 25 IC = 500 mA dc IB = 50 mA dc V dc Min Max Limits 0.6 Cobo fT ton toff VCB = 10 V dc IE = 0; 100 kHz ≤ f ≤ 1 MHz VCE = 10 V dc IC = 50 mA dc f = 100 MHz IC = 500 mA dc IB = 50 mA dc IC = 500 mA dc IB = 50 mA dc ns ns 40 90 pF Min Max 25 2N3467 2N3467L Mhz 175 500 2N3468 2N3468L Mhz 150 500 1/ Pulsed (see 4.5.1) Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/348E 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in section 3 and 4 of this specification, whether or not they are listed. 2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Defense Automated Printing Service, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein (except for associated detail specifications, specification sheets or MS standards), the text of this specification takes precedence. Nothing in this specification, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500, and as specified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MILPRF-19500. 3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in MIL-PRF-19500 and figure 1 herein (similar to TO-5 and TO-39). 3.3.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein. Where a choice of lead finish is desired, it shall be specified in the contract or purchase order (see 6.2). 3.4 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I. 3.7 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified manufacturer’s list before contract award (see 4.2 and 6.3 ). 4.VERIFICATION 4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 2 MIL-PRF-19500/348E FIGURE 1. Physical dimensions. (Similar to TO-5, TO-39) 3 MIL-PRF-19500/348E Ltr CD CH HD LC LD LL LL LU L1 L2 TL TW P Q r a Notes NOTES: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. Dimensions Inches Min Max 0.305 0.355 0.240 0.260 0.355 0.370 0.200 TP 0.016 0.021 1.500 1.750 0.500 0.750 0.016 0.019 0.050 0.250 0.029 0.045 0.028 0.034 0.100 0.040 0.010 45° TP 1, 2, 8, 9 Millimeters Min Max 7.75 9.02 6.10 6.60 9.02 9.40 5.08 TP 0.41 0.53 38.1 44.45 12.7 19.05 0.41 0.48 1.27 6.35 0.74 1.14 0.71 0.86 2.54 1.01 0.25 45° TP 1, 2, 8, 9 Notes 6 7 7,12 7,13 7 7 7 3 10 5 4 11 6 Dimensions are in inches. Metric equivalents are given for general information only. Symbol TL is measured from HD maximum. Details of outline in this zone are optional. Symbol CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane 0.054 inch (1.37 mm) +0.001 inch (0.03 mm) -0.000 inch (0.00 mm) below seating plane shall be within 0.007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by direct methods or by gauge. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Lead designation, lead number 1 = emitter; lead number 2 = base; lead number 3 = collector. Lead number three is electrically connected to case. Beyond r maximum, TW shall be held for a minimum length of 0.011 inch (0.28 mm). Symbol r applied to both inside corners of tab. TO-5. TO-39. FIGURE 1. Physical dimensions (Similar to TO-5, TO-39) - Continued. 4 MIL-PRF-19500/348E 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.3 Screening. Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 9 ICBO1 and hFE2 Not applicable 11 ICBO1; hFE2; ∆ICBO1 = 100 percent of initial value or 50 nA dc, whichever is greater; ICBO1 and hFE2 ∆hFE2 = 25 percent of initial value. 12 See 4.3.1 See 4.3.1 13 Subgroups 2 and 3 of table I herein; Subgroup 2 of table I herein; ∆ICBO1 = 100 percent of initial value or 50 nA dc, whichever is greater; ∆ICBO1 = 100 percent of initial value or 50 nA dc, whichever is greater; ∆hFE2 = 25 percent of initial value. ∆hFE2 = 25 percent of change initial value. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = Room ambient as defined in the general requirements of MIL-STD-750, paragraph 4.5; PT = 1.0 W; VCB = 30 V dc for 2N3467, 2N3467L VCB = 40 V dc for 2N3468, 2N3468L VCB = 10 V dc for JANS devices. NOTE: No heat sink or forced air cooling on the devices shall be permitted. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and paragraphs 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition 3 2037 Test condition A. 4 1037 VCB ≥ 10 V dc, TA = ≤ 35° minimum for 2,000 cycles. No heat sink shall be permitted. 5 1027 VCB ≥ 10 V dc, 96 hours, adjusted as required according to the chosen TA to give an average TJ = +275°C. 5 2037 Test condition A. 6 3131 See 4.5.3. 5 MIL-PRF-19500/348E 4.4.2.2 Group B inspection, table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500. Subgroup 3 3 Method Condition 1027 For eutectic die attach: VCB ≥ 10 V dc, adjust PT to achieve TJ = 150°C minimum. TA = +30°±5°C. No heat sink or forced-air cooling on the devices shall be permitted. 1037 For solder die attach, VCB ≥ 10 V dc, 2,000 cycle. 2037 Test condition A. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. Subgroup Method Condition 2 2036 Test condition E. 6 1027 For eutectic die attach: VCB ≥ 10 V dc, adjust PT to achieve TJ = 150°C minimum. TA = +30°±5°C. No heat sink or forced-air cooling on the devices shall be permitted. 1037 For solder die attach, VCB ≥ 10 V dc, 6,000 cycle. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Input capacitance. This test shall be conducted in accordance with MIL-STD-750, method 3240, except the output capacitor shall be omitted. 4.5.3 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131 of MIL-STD-750. The following details shall apply: a. Minimum collector current magnitude during power application shall be 160 mA dc for RθJC and 32 mA dc for RθJA. b. Collector to base voltage magnitude shall be 10 V dc. c. Reference temperature measuring point shall be the case for RθJC and ambient air for RθJA. d. Reference point temperature shall be selected with 25°C < TR < 35°C and recorded before test is started. e. Mounting arrangement shall be with heat sink to case for RθJC and without heat sink for RθJA. f. Maximum limits shall be RθJC = 35°C/W and RθJA = 175°C/W. 6 MIL-PRF-19500/348E TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Breakdown voltage collector to base 2N3467, L 2N3468, L 3001 Breakdown voltage emitter to base 3026 Breakdown voltage, collector to emitter 3011 Bias condition D; V(BR)CBO IC = 10 µA dc Bias condition D; V(BR)EBO IE = 10 µA dc Bias condition D; Collector to base cutoff current 3036 Collector to emitter cutoff current 3041 Forward to current transfer ratio 3076 5.0 V dc 40 50 V dc V dc V(BR)CEO Bias condition D; ICBO1 100 nA dc ICEX 100 nA dc VCB = 30 V dc Bias condition A; VEB = 3.0 V dc; VCE = 30 V dc VCE = 1.0 V dc; hFE1 IC = 150 mA dc; pulsed (see 4.5.1) 2N3467, L 2N3468, L 40 25 3076 VCE = 1.0 V dc; hFE2 IC = 500 mA dc; pulsed (see 4.5.1) 2N3467, L 2N3468, L Forward-current transfer ratio V dc V dc IC = 10 mA dc; pulsed (see 4.5.1) 2N3647, L 2N3648, L Forward-current transfer ratio 40 50 40 25 3076 VCE = 5.0 V dc; 120 75 hFE3 IC = 1.0 A dc; pulsed (see 4.5.1) 2N3467, L 2N3468, L 40 25 Collector to emitter saturation voltage 3071 Collector to emitter saturation voltage 3071 IC = 150 mA dc; VCE(SAT)1 0.35 V dc VCE(SAT)2 0.6 V dc IB = 15 mA dc; pulsed (see 4.5.1) IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) See footnote at end of table. 7 MIL-PRF-19500/348E TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 2 - Continued Collector to emitter saturation voltage 3071 Base to emitter voltage saturated 3066 IC = 1.0 A dc; VCE(SAT)3 1.2 V dc VBE(SAT)1 1.0 V dc 1.2 V dc 1.6 V dc 50 µA dc 500 500 MHz MHz Cobo 25 pF Cibo 100 pF IB = 100 mA dc; pulsed (see 4.5.1) Test condition A; IC = 150 mA dc IB = 15 mA dc; pulsed (see 4.5.1) Base to emitter voltage saturated 3066 Test condition A; VBE(SAT)2 0.8 IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) Base to emitter voltage saturated 3066 Test condition A; VBE(SAT)3 IC = 1.0 A dc; IB = 100 mA dc; pulsed (see 4.5.1) Subgroup 3 TA = +150°C High-temperature operation: Collector to base cutoff current 3036 Low-temperature operation: Forward-current transfer ratio Bias condition D; VCB = 30 V dc ICBO2 TA = -55°C 3076 hFE4 VCE = 1.0 V dc; IC = 150 mA dc; pulsed (see 4.5.1) 2N3467, L 2N3468, L 16 10 Subgroup 4 Extrapolated unity gain frequency 3261 VCE = 10 V dc; ft IC = 50 mA dc; f = 100 MHz 2N3467, L 2N3468, L 175 150 Open circuit output capacitance 3236 Input capacitance (output opencircuited) 3240 VCB = 10 V dc; IE = 0; 100 kHz ≤ f ≤ 1 MHz VEB = 0.5 V dc; IC = 0; 100 kHz ≤ f ≤ 1 MHz (see 4.5.2) See footnote at end of table. 8 MIL-PRF-19500/348E TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 4 - Continued Pulse response Delay time 3251 Test condition A; IC = 500 mA dc; td 10 ns tr 30 ns ts 60 ns tf 30 ns IB1 = 50 mA dc; VEB = 2 V dc (see figure 2) Rise time 3251 Test condition A; IC = 500 mA dc; IB1 = 50 mA dc; VEB = 2 V dc (see figure 2) Storage time 3251 Test condition A; IC = 500 mA dc; IB1 = IB2 = 50 mA dc; (see figure 3) Fall time 3251 Test condition A; IC = 500 mA dc; IB1 = IB2 = 50 mA dc; (see figure 3) Subgroups 5, 6, and 7 Not applicable 1/ For sampling plan, see MIL-PRF-19500. 9 MIL-PRF-19500/348E TABLE II. Groups B and C delta electrical measurements. 1/ 2/ 3/ Step Inspection MIL-STD-750 Method 1. 2. 3. Collector to base cutoff current 3036 Collector to emitter voltage saturated 3071 Forward-current transfer ratio 3076 Symbol Conditions Bias condition D; Min ∆ICBO1 VCB = 30 V dc IC = 500 mA dc; 100 percent of initial value or 50 nA dc, whichever is greater. ∆hFE2 25 percent change from initial value. 1/ The delta electrical measurements for table VIa (JANS) of MIL-PRF-19500 are as follows: a. Subgroup 5, see table II herein, steps 1, 2 and 3. 2/ The delta electrical measurements for table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500 are as follows: 3/ The delta electrical measurements for table VII of MIL-PRF-19500 are as follows: a. Subgroup 6, see table II herein, step 3. 10 Max 50 mV dc change from initial value. IC = 500 mA dc; pulsed (see 4.5.1) a. Subgroups 3 and 6 see table II herein, step 3. Unit ∆VCE(SAT)2 IB = 50 mA dc; pulsed (see 4.5.1) VCE = 1.0 V dc; Limits MIL-PRF-19500/348E NOTES: 1. The rise time (tr) of the applied pulse shall be ≤ 2 ns, duty cycle ≤ 2 percent and the generator source impedance shall be 50 ohms. 2. Sampling oscilloscope: Zin ≥ 100 kΩ, Cin ≤ pF, rise time ≤ .2 ns. FIGURE 2. Equivalent circuit for measuring delay and rise times. NOTES: 1. The rise time (tr) of the applied pulse shall be ≤ 2 ns, duty cycle ≤ 2 percent and the generator source impedance shall be 50 ohms. 2. Sampling oscilloscope: Zin ≥ 100 kΩ, Cin ≤ pF, rise time ≤ .2 ns. FIGURE 3. Equivalent circuit for measuring storage and fall times. 11 MIL-PRF-19500/348E 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements should be as specified in the contract or order (see 6.2). When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Issue of DODISS to be cited in the solicitation (see 2.1.1). b. The lead finish as specified (see 3.3.1). c. Type designation and quality assurance level. d. Packaging requirements (see 5.1). 6. 3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer's List QML-19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216. 6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. Custodians: Army - CR Navy - EC Air Force – 11 DLA – CC Preparing activity: DLA - CC (Project 5961-2131) Review activities: Army - AR, AV, MI Navy - AS, CG, MC Air Force - 13, 19 12 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of Requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/348E 2. DOCUMENT DATE (YYMMDD) 990725 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N3467, 2N3467L, 2N3468, 2N3468L, JAN, JANTX, JANTXV, AND JANS 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) Commercial DSN FAX EMAIL 7. DATE SUBMITTED (YYMMDD) 8. PREPARING ACTIVITY a. Point of contact: Alan Barone, c. ADDRESS : Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street, Columbus, OH 43216-5000 DD Form 1426, FEB 1999 (EG) b. TELEPHONE Commercial DSN 614-692-0510 850-0510 FAX 614-692-6939 EMAIL [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman Road, Suite 2533 Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99