Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm ● ● ● Satisfactory foward current transfer ratio hFE collector current IC characteristics. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Makes up a complementary pair with 2SC2631, which is optimum for the pre-driver stage of a 20 to 40W output amplifier. ■ Absolute Maximum Ratings +0.2 1.27 Parameter Symbol Ratings Unit Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage VEBO –5 V Peak collector current ICP –100 mA Collector current IC –50 mA Collector power dissipation PC 750 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.2 0.45 –0.1 0.45 –0.1 (Ta=25˚C) 1.27 2.3±0.2 ● 13.5±0.5 ■ Features 4.0±0.2 5.1±0.2 5.0±0.2 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Parameter Symbol Conditions min typ max Unit –1 µA Collector cutoff current ICBO VCB = –100V, IE = 0 Collector to emitter voltage VCEO IC = –0.1mA, IB = 0 –150 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V Forward current transfer ratio hFE * VCE = –5V, IC = –10mA 130 Collector to emitter saturation voltage VCE(sat) IC = –30mA, IB = –3mA Transition frequency fT VCB = –10V, IE = 10mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz Noise voltage NV *h FE VCE = –10V, IC = –1mA, GV = 80dB Rg = 100kΩ, Function = FLAT 450 –1 200 150 V MHz 5 pF 300 mV Rank classification Rank R S T hFE 130 ~ 220 185 ~ 330 260 ~ 450 1 2SA1123 Transistor PC — Ta IC — VCE –120 –70 0.6 0.5 0.4 0.3 0.2 IB=–500µA –450µA –400µA –350µA –300µA –250µA –200µA –60 –50 –40 –150µA –30 –100µA –20 0 40 60 80 100 120 140 160 –2 –10 –3 –1 Ta=75˚C 25˚C – 0.1 –25˚C – 0.03 –1 –3 –10 –30 –100 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 5 4 3 2 1 0 –1 –3 –10 –6 –8 –10 –40 –12 0 – 0.4 –30 –100 Collector to base voltage VCB (V) – 0.8 –1.2 –1.6 –2.0 Base to emitter voltage VBE (V) fT — IE 300 VCE=–5V 500 400 Ta=75˚C 300 25˚C –25˚C 200 100 0 – 0.1 – 0.3 VCB=–10V Ta=25˚C 250 200 150 100 50 0 –1 –3 –10 –30 Collector current IC (mA) Cob — VCB 6 –4 600 Forward current transfer ratio hFE –30 – 0.01 – 0.1 – 0.3 –60 hFE — IC IC/IB=10 – 0.3 –80 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 –25˚C 0 0 Transition frequency fT (MHz) 20 Ta=75˚C –20 –50µA –10 0.1 Collector current IC (mA) 0.7 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C –100 0.8 0 Collector output capacitance Cob (pF) VCE=–5V Ta=25˚C 0.9 0 2 IC — VBE –80 Collector current IC (mA) Collector power dissipation PC (W) 1.0 –100 1 3 10 30 Emitter current IE (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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