ETC 2SC3935Q

Transistor
2SC3935
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
Unit: mm
2.1±0.1
■ Features
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
10
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
+0.1
+0.1
EIAJ:SC–70
S–Mini Type Package
Marking symbol : 1S
Symbol
Conditions
ICBO
VCB = 10V, IE = 0
min
ICEO
VCE = 10V, IB = 0
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
3
hFE1
VCE = 2.4V, IC = 7.2mA
75
75
hFE2
VCE = 2.4V, IC = 100µA
Collector to emitter saturation voltage
VCE(sat)
IC = 20mA, IB = 4mA
Transition frequency
fT
VCE = 2.4V, IC = 7.2mA, f = 200MHz
Collector output capacitance
Cob
VCB = 4V, IE = 0, f = 1MHz
Common emitter reverse transfer capacitance
Crb
Base time constant
rbb' · CC
hFE ratio
hFE(RATIO)
FE
0.3–0
0.65
1.3±0.1
0.65
1:Base
2:Emitter
3:Collector
0.2±0.1
(Ta=25˚C)
Parameter
*1h
0.15–0.05
Ratings
Forward current transfer ratio
3
0 to 0.1
Symbol
Collector cutoff current
1
2
(Ta=25˚C)
Parameter
■ Electrical Characteristics
0.425
0.2
■ Absolute Maximum Ratings
1.25±0.1
0.7±0.1
●
2.0±0.2
●
High transition frequency fT.
Small collector output capacitance Cob and common base reverse
transfer capacitance Crb.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.9±0.1
●
0.425
typ
max
Unit
1
µA
10
µA
10
V
V
220
0.5
V
1.9
2.5
GHz
0.9
1.1
pF
VCB = 4V, IE = 0, f = 1MHz
0.25
0.35
pF
VCB = 4V, IE = –5mA, f = 31.9MHz
11.8
13.5
ps
VCE = 2.4V, IC = 100µA
VCE = 2.4V, IC = 7.2mA
1.4
0.75
1.6
Rank classification
Rank
P
Q
hFE
75 ~ 130
110 ~ 220
1
2SC3935
Transistor
PC — Ta
IC — VCE
60
TC=Ta
120
80
40
60
50
IB=500µA
400µA
40
300µA
30
200µA
20
100µA
Ta=75˚C
–25˚C
40
30
20
10
10
0
40
60
80 100 120 140 160
0
0
2
10
3
1
Ta=75˚C
25˚C
–25˚C
0.03
1
3
10
30
100
Collector current IC (mA)
Cob — VCB
IE=0
f=1MHz
Ta=25˚C
1.2
1.0
0.8
0.6
0.4
0.2
0
1
3
10
0
0.4
30
100
Collector to base voltage VCB (V)
0.8
1.2
1.6
2.0
Base to emitter voltage VBE (V)
fT — I E
4.0
300
Ta=75˚C
240
25˚C
180
–25˚C
120
60
VCB=4V
Ta=25˚C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.1
0.3
1
3
10
30
Collector current IC (mA)
1.6
1.4
12
VCE=4V
Forward current transfer ratio hFE
30
0.3
10
360
IC/IB=10
0.01
0.1
8
hFE — IC
100
0.1
6
Collector to emitter voltage VCE (V)
VCE(sat) — IC
0.3
4
Transition frequency fT (GHz)
20
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
50
160
0
Collector output capacitance Cob (pF)
VCE=4V
25˚C
Ta=25˚C
70
0
2
IC — VBE
80
Collector current IC (mA)
Collector power dissipation PC (mW)
200
100
0
– 0.1 – 0.3
–1
–3
–10
–30
Emitter current IE (mA)
–100
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2001 MAR