ETC 2SB1317Q

Power Transistors
2SB1317
Silicon PNP triple diffusion planar type
Unit: mm
For high power amplification
Complementary to 2SD1975
(10.0) (6.0)
(2.0)
(4.0)
(3.0)
φ 3.3±0.2
(1.5)
1.0±0.2
0.6±0.2
10.9±0.5
Rating
Unit
Collector to base voltage
VCBO
−180
V
Collector to emitter voltage
VCEO
−180
V
Emitter to base voltage
VEBO
−5
V
Peak collector current
ICP
−25
A
Collector current
IC
−15
A
PC
150
W
TC = 25°C
Ta = 25°C
2.7±0.3
3.0±0.3
5.45±0.3
Symbol
Collector power
dissipation
(1.5)
2.0±0.3
■ Absolute Maximum Ratings TC = 25°C
Parameter
(2.0)
(1.5)
• Excellent current IC characteristics of forward current transfer ratio
hFE vs. collector
• Wide area of safe operation (ASO)
• High transition frequency fT
• Optimum for the output stage of a Hi-Fi audio amplifier
5.0±0.3
(3.0)
20.0±0.5
(2.5)
Solder Dip
■ Features
26.0±0.5
20.0±0.5
1
2
1 : Base
2 : Collector
3 : Emitter
TOP-3L Package
3
3.5
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
■ Electrical Characteristics TC = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = −180 V, IE = 0
−50
µA
Emitter cutoff current
IEBO
VEB = −3 V, IC = 0
−50
µA
hFE1
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
VCE = −5 V, IC = −20 mA
20
hFE2 *
VCE = −5 V, IC = −1 A
60
hFE3
VCE = −5 V, IC = −8 A
20
VBE
VCE = −5 V, IC = −8 A
VCE(sat)
IC = −10 A, IB = −1 A
fT
Collector output capacitance
Cob
200
−1.8
−2.5
V
V
VCE = −5 V, IC = − 0.5 A, f = 1 MHz
20
MHz
VCB = −10 V, IE = 0, f = 1 MHz
450
pF
Note) *: Rank classification
Rank
Q
S
P
hFE2
60 to 120
80 to 160
100 to 200
1
2SB1317
Power Transistors
PC  T a
IC  VCE
150
(1)
100
50
–24
TC=25˚C
IB=–1000mA
–800mA
–700mA
–600mA
–500mA
–400mA
–20
–16
–300mA
–12
–200mA
–150mA
–8
–100mA
0
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
–2
–4
25˚C
TC=100˚C
–25˚C
–1
– 0.1
– 0.03
– 0.01
– 0.1 – 0.3
–1
–3
–10
–8
–30
1000
Forward current transfer ratio hFE
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10
–3
–6
–10
–12
300
100
–25˚C
30
10
3
1
– 0.1 – 0.3
–100
25˚C
TC=100˚C
–1
–3
–10
–30
–100
Collector current IC (A)
Cob  VCB
Area of safe operation (ASO)
–100
10000
IE=0
f=1MHz
TC=25˚C
–30
ICP
–10
IC
Non repetitive pulse
TC=25˚C
Collector current IC (A)
t=10ms
1000
300
100ms
–3
DC
–1
– 0.3
100
– 0.1
30
– 0.03
–3
–10
–30
–100
Collector to base voltage VCB (V)
– 0.01
–1
–3
–10
–30
–1
–2
–3
–4
Base to emitter voltage VBE (V)
fT  I C
VCE=–5V
Collector current IC (A)
3000
0
hFE  IC
– 0.3
Collector output capacitance Cob (pF)
–6
Collector to emitter voltage VCE (V)
VCE(sat)  IC
–10
10
–1
100˚C
–12
0
0
1000
Transition frequency fT (MHz)
20
25˚C
TC=–25˚C
(3)
(2)
0
–18
–50mA
–4
0
2
VCE=–5V
Collector current IC (A)
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3.5W)
IC  VBE
–24
Collector current IC (A)
Collector power dissipation PC (W)
200
–100 –300 –1000
Collector to emitter voltage VCE (V)
VCE=–10V
f=1MHz
TC=25˚C
300
100
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
Collector current IC (A)
–10
Power Transistors
2SB1317
Rth(t)  t
Thermal resistance Rth(t) (˚C/W)
10000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.2A (2W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
1000
100
(1)
10
(2)
1
0.1
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3
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2001 MAR