Transistor 2SC5363(Tentative) Silicon NPN epitaxial planer type For low-voltage high-frequency amplification Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 ● High transition frequency fT. Small collector output capacitance Cob. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.6±0.1 ● 1.0±0.1 ● 0.4 0.2–0.05 ■ Features Parameter Symbol Ratings Unit Collector to base voltage VCBO 9 V Collector to emitter voltage VCEO 6 V Emitter to base voltage VEBO 2 V Collector current IC 30 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 ˚C Storage temperature Tstg –55 ~ +125 ˚C ■ Electrical Characteristics Parameter +0.1 0.15–0.05 0 to 0.1 (Ta=25˚C) 0.45±0.1 0.3 ■ Absolute Maximum Ratings 0.75±0.15 2 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–75 SS–Mini Type Package Marking symbol : 3Y (Ta=25˚C) Symbol Conditions Collector cutoff current ICBO VCB = 5V, IE = 0 Emitter cutoff current IEBO VEB = 1V, IC = 0 Forward current transfer ratio hFE VCE = 3V, IC = 10mA Collector output capacitance Cob Transition frequency fT Foward transfer gain Noise figure min 40 typ max Unit 1 µA 1 µA 100 200 VCB = 3V, IE = 0, f = 1MHz 0.4 0.7 VCE = 3V, IC = 10mA, f = 1.5GHz 10 GHz | S21e |2 VCE = 0.3V, IC = 1mA, f = 0.9GHz 6.5 dB NF VCE = 0.3V, IC = 1mA, f = 0.9GHz 1.7 dB pF 1 2SC5363 Transistor PC — Ta IC — VCE 30 50 100 75 50 25 25 40 IB=600µA 500µA 30 400µA 300µA 20 200µA 10 60 80 100 120 140 160 1 2 1 0.3 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.3 1 3 10 5 6 0 30 Ta=75˚C 80 25˚C 60 –25˚C 40 20 0.3 1 3 10 30 10 3 1 0.3 1 Collector current IC (mA) 100 3.2 2.4 1.6 0 0.1 10 30 100 Cob — VCB 0.8 30 3 Collector current IC (mA) VCE=0.3V f=900MHz Noise figure NF (dB) 2 10 30 0.1 0.1 100 4.0 3 100 1.2 VCE=0.3V f=900MHz 4 1.2 VCE=3V f=1.5GHz NF — IC 10 1.0 0.3 4.8 6 0.8 300 Collector current IC (mA) 8 0.6 fT — IC 100 0 0.1 100 12 1 0.4 1000 | S21e |2 — IC 0.3 0.2 Base to emitter voltage VBE (V) VCE=3V Collector current IC (mA) 0 0.1 4 Collector output capacitance Cob (pF) 0.001 0.1 3 120 Forward current transfer ratio hFE 3 0.1 10 hFE — IC IC/IB=10 –25˚C 15 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 Ta=75˚C 0 0 Transition frequency fT (GHz) 40 25˚C 20 5 100µA 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 125 0 Forward transfer gain |S21e|2 (dB) VCE=3V Ta=25˚C 0 2 IC — VBE 60 Collector current IC (mA) Collector power dissipation PC (mW) 150 IE=0 f=1MHz Ta=25˚C 1.0 0.8 0.6 0.4 0.2 0 0.3 1 3 Collector current IC (mA) 10 1 3 10 30 100 Collector to base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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