Transistor 2SA1806 Silicon PNP epitaxial planer type For high speed switching Unit: mm 1.6±0.15 Ratings Unit VCBO –15 V Collector to emitter voltage VCEO –15 V Emitter to base voltage VEBO –4 V Peak collector current ICP –100 mA Collector current IC –50 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 ˚C Storage temperature Tstg –55 ~ +125 ˚C ■ Electrical Characteristics +0.1 0.5 0.5 3 +0.1 0.15–0.05 Symbol 1 0 to 0.1 Parameter 0.4 2 (Ta=25˚C) Collector to base voltage 0.8±0.1 0.45±0.1 0.3 ■ Absolute Maximum Ratings 1.6±0.1 ● 1.0±0.1 ● High-speed switching. Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.75±0.15 ● 0.4 0.2–0.05 ■ Features 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–75 SS–Mini Type Package Marking symbol : AK (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = –8V, IE = 0 – 0.1 µA Emitter cutoff current IEBO VEB = –3V, IC = 0 – 0.1 µA hFE1 Forward current transfer ratio * hFE2 VCE = –1V, IC = –10mA 50 VCE = –1V, IC = –1mA 30 Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = – 1mA Transition frequency fT VCB = –10V, IE = 10mA, f = 200MHz Collector output capacitance Cob Turn-on time ton Turn-off time Storage time *h FE1 150 – 0.1 800 – 0.2 V 1500 MHz VCB = –5V, IE = 0, f = 1MHz 1 pF (Note 1) Next page 12 ns toff (Note 1) Next page 20 ns tstg (Note 1) Next page 19 ns Rank classification Rank Q R hFE1 50 ~ 120 90 ~ 150 Marking Symbol AKQ AKR 1 Transistor 2SA1806 Switching time measurement circuit ton, toff Test Circuit VBB VCC=–1.5V VBB=–10V VCC=–3V 2kΩ 62Ω 508Ω 30Ω Vout 52Ω 0.1µF Vin Vout 34Ω 51Ω 51Ω Vin 150 Collector power dissipation PC (mW) 0.1µF Vin PC — Ta tstg Test Circuit 0 10% Vin 90% 90% Vout 0 90% 90% Vout 10% toff Vin=9.0V ton toff Vin=–5.8V Vin=9.8V VBB=Ground VBB=–8.0V 125 100 75 50 25 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) VCE(sat) — IC Ta=25˚C IB=–600µA –50 –500µA –400µA –40 –300µA –30 –200µA Collector to emitter saturation voltage VCE(sat) (V) –100 –60 Collector current IC (mA) VBE(sat) — IC IC/IB=10 –30 –10 Ta=75˚C 25˚C –25˚C –3 –1 – 0.3 –20 –100µA –10 – 0.1 –2 –4 –6 –8 –10 –12 – 0.01 –1 –3 –10 –30 Transition frequency fT (MHz) Forward current transfer ratio hFE 2000 160 120 80 25˚C –25˚C 800 400 0 –3 –10 –30 Collector current IC (mA) –100 1 3 10 –10 –30 –100 –300 –1000 Cob — VCB 1200 Ta=75˚C –3 2.4 1600 –1 – 0.01 –1 Collector current IC (mA) VCB=–10V f=200MHz Ta=25˚C VCE=–10V 2 –100 –300 –1000 fT — IE 2400 200 Ta=–25˚C 25˚C 75˚C –1 Collector current IC (mA) hFE — IC 240 0 – 0.1 – 0.3 –3 – 0.03 Collector to emitter voltage VCE (V) 40 –10 – 0.1 Collector output capacitance Cob (pF) 0 IC/IB=10 –30 – 0.3 – 0.03 0 –100 Base to emitter saturation voltage VBE(sat) (V) IC — VCE 30 Emitter current IE (mA) 100 IE=0 f=1MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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