Transistor 2SC3811 Silicon NPN epitaxial planer type For high speed switching Unit: mm 5.0±0.2 High-speed switching. Low collector to emitter saturation voltage VCE(sat). ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCES 40 V Emitter to base voltage VEBO 5 V Peak collector current ICP 300 mA Collector current IC 100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Parameter Symbol Conditions ICBO Emitter cutoff current IEBO VEB = 4V, IC = 0 Forward current transfer ratio hFE* VCE = 1V, IC = 10mA Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA Base to emitter saturation voltage VBE(sat) IC = 10mA, IB = 1mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Turn-on time ton Turn-off time toff Storage time tstg FE +0.2 0.45 –0.1 1.27 1.27 1 2 3 2.54±0.15 1:Emitter 2:Base 3:Collector JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Collector cutoff current *h +0.2 0.45 –0.1 2.3±0.2 ● 13.5±0.5 ● 5.1±0.2 ■ Features 4.0±0.2 min typ VCB = 40V, IE = 0 Refer to the measurment circuit 60 max Unit 0.1 µA 0.1 µA 200 0.17 0.25 V 1.0 V 450 2 MHz 6 pF 17 ns 17 ns 10 ns Rank classification Rank Q R hFE 60 ~ 120 90 ~ 200 1 Transistor 2SC3811 Switching time measurement circuit ton, toff Test Circuit PC — Ta tstg Test Circuit 0.1µF Vout A 50Ω 3.3kΩ 1kΩ 910Ω 0.1µF 500Ω 220Ω Vin=10V Vout 90Ω Vin=10V 3.3kΩ 50Ω Vbb= –3V Vin VCC=10V 50Ω Vbb=2V 10% Vin 10% 90% Vout 500Ω VCC=3V 0 Vin 10% Vout 10% 90% Vout ton toff Collector power dissipation PC (mW) 0.1µF 800 700 600 500 400 300 200 100 0 tstg 0 (Waveform at A) VCE(sat) — IC Ta=25˚C IB=3.0mA 2.5mA 80 2.0mA 1.5mA 60 1.0mA 40 0.5mA 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 100 IC/IB=10 30 10 3 1 –25˚C 0.1 0.03 Collector to emitter voltage VCE (V) 1 3 30 300 Ta=75˚C 25˚C –25˚C 0.3 1 3 10 3 Ta=–25˚C 25˚C 75˚C 1 0.3 0.1 0.03 100 1 3 10 30 Collector current IC (mA) 100 100 300 1000 Cob — VCB 500 400 300 200 100 0 –1 30 Collector current IC (mA) 6 VCB=10V Ta=25˚C Transition frequency fT (MHz) Forward current transfer ratio hFE 400 100 10 fT — I E VCE=1V 2 10 600 200 IC/IB=10 0.01 0.3 hFE — IC 500 80 100 120 140 160 30 Collector current IC (mA) 600 0 0.1 Ta=75˚C 25˚C 0.3 0.01 0.1 60 100 Collector output capacitance Cob (pF) Collector current IC (mA) 100 40 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) 120 Collector to emitter saturation voltage VCE(sat) (V) IC — VCE 20 Ambient temperature Ta (˚C) IE=0 f=1MHz Ta=25˚C 5 4 3 2 1 0 –3 –10 –30 –100 –300 –1000 Emitter current IE (mA) 1 3 10 30 100 Collector to base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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