ETC 2SC3811R

Transistor
2SC3811
Silicon NPN epitaxial planer type
For high speed switching
Unit: mm
5.0±0.2
High-speed switching.
Low collector to emitter saturation voltage VCE(sat).
■ Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
40
V
Collector to emitter voltage
VCES
40
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
300
mA
Collector current
IC
100
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
Parameter
Symbol
Conditions
ICBO
Emitter cutoff current
IEBO
VEB = 4V, IC = 0
Forward current transfer ratio
hFE*
VCE = 1V, IC = 10mA
Collector to emitter saturation voltage
VCE(sat)
IC = 10mA, IB = 1mA
Base to emitter saturation voltage
VBE(sat)
IC = 10mA, IB = 1mA
Transition frequency
fT
VCB = 10V, IE = –10mA, f = 200MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
Turn-on time
ton
Turn-off time
toff
Storage time
tstg
FE
+0.2
0.45 –0.1
1.27
1.27
1 2 3
2.54±0.15
1:Emitter
2:Base
3:Collector
JEDEC:TO–92
EIAJ:SC–43A
(Ta=25˚C)
Collector cutoff current
*h
+0.2
0.45 –0.1
2.3±0.2
●
13.5±0.5
●
5.1±0.2
■ Features
4.0±0.2
min
typ
VCB = 40V, IE = 0
Refer to the measurment circuit
60
max
Unit
0.1
µA
0.1
µA
200
0.17
0.25
V
1.0
V
450
2
MHz
6
pF
17
ns
17
ns
10
ns
Rank classification
Rank
Q
R
hFE
60 ~ 120
90 ~ 200
1
Transistor
2SC3811
Switching time measurement circuit
ton, toff Test Circuit
PC — Ta
tstg Test Circuit
0.1µF
Vout
A
50Ω
3.3kΩ
1kΩ
910Ω
0.1µF 500Ω
220Ω
Vin=10V
Vout
90Ω
Vin=10V
3.3kΩ
50Ω
Vbb=
–3V
Vin
VCC=10V
50Ω
Vbb=2V
10%
Vin
10%
90%
Vout
500Ω
VCC=3V
0
Vin
10%
Vout
10%
90%
Vout
ton
toff
Collector power dissipation PC (mW)
0.1µF
800
700
600
500
400
300
200
100
0
tstg
0
(Waveform at A)
VCE(sat) — IC
Ta=25˚C
IB=3.0mA
2.5mA
80
2.0mA
1.5mA
60
1.0mA
40
0.5mA
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
100
IC/IB=10
30
10
3
1
–25˚C
0.1
0.03
Collector to emitter voltage VCE (V)
1
3
30
300
Ta=75˚C
25˚C
–25˚C
0.3
1
3
10
3
Ta=–25˚C
25˚C
75˚C
1
0.3
0.1
0.03
100
1
3
10
30
Collector current IC (mA)
100
100
300
1000
Cob — VCB
500
400
300
200
100
0
–1
30
Collector current IC (mA)
6
VCB=10V
Ta=25˚C
Transition frequency fT (MHz)
Forward current transfer ratio hFE
400
100
10
fT — I E
VCE=1V
2
10
600
200
IC/IB=10
0.01
0.3
hFE — IC
500
80 100 120 140 160
30
Collector current IC (mA)
600
0
0.1
Ta=75˚C
25˚C
0.3
0.01
0.1
60
100
Collector output capacitance Cob (pF)
Collector current IC (mA)
100
40
VBE(sat) — IC
Base to emitter saturation voltage VBE(sat) (V)
120
Collector to emitter saturation voltage VCE(sat) (V)
IC — VCE
20
Ambient temperature Ta (˚C)
IE=0
f=1MHz
Ta=25˚C
5
4
3
2
1
0
–3
–10
–30
–100 –300 –1000
Emitter current IE (mA)
1
3
10
30
100
Collector to base voltage VCB (V)
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2001 MAR