Transistors 2SC3757 Silicon NPN epitaxial planer type Unit: mm For high speed switching 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Symbol Rating Unit VCBO 40 V Collector to emitter voltage VCES 40 V Emitter to base voltage VEBO 5 V Peak collector current ICP 300 mA Collector current IC 100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 Parameter 1.1+0.3 –0.1 1.1+0.2 –0.1 10° ■ Absolute Maximum Ratings Ta = 25°C Collector to base voltage 0.4±0.2 2 1 (0.65) • High-speed switching • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. • Allowing pair use with 2SA1738 5° 1.50+0.25 –0.05 ■ Features 2.8+0.2 –0.3 3 1: Base 2: Emitter 3: Collector JEDEC: TO-236 EIAJ: SC-59 Mini Type Package Marking Symbol: 2Y ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current ICBO VCB = 15 V, IE = 0 0.1 µA Emitter cutoff current IEBO VEB = 4 V, IC = 0 0.1 µA hFE VCE = 1 V, IC = 10 mA Collector to emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1 mA Base to emitter saturation voltage VBE(sat) IC = 10 mA, IB = 1 mA Forward current transfer ratio * Transition frequency VCB = 10 V, IE = −10 mA, f = 200 MHz fT Collector output capacitance VCB = 10 V, IE = 0, f = 1 MHz Cob Turn-on time ton Turn-off time toff Storage time tstg 60 200 0.17 1.0 450 2 17 Refere to the measurement circuit 0.25 V V MHz 6 pF ns 17 ns 10 ns Note) *: Rank classification Rank Q R hFE 60 to 120 90 to 200 Marking symbol 2YQ 2YR 1 2SC3757 Transistors PC Ta Switching time measurement circuit ton , toff Test circuit 0.1 µF VOUT VIN = 10 V 3.3 kΩ 50 Ω 3.3 kΩ 50 Ω VCC = 3 V 10% VIN 10% VOUT 1 kΩ 90 Ω 910 Ω 500 Ω 500 Ω 50 Ω VCC = 10 V VDD = 2 V 0 VIN 10% VOUT 10% 90% 90% VOUT VOUT A VIN = 10 V VDD = −3 V VIN Collector power dissipation PC (mW) tstg Test circuit 0.1 µF 220 Ω 240 ton toff tstg 200 160 120 80 40 0 (Waveform at A) 80 2.0 mA 1.5 mA 60 1.0 mA 40 0.5 mA 20 0 0.2 0.4 0.6 0.8 1.0 1.2 IC / IB = 10 10 3 1 25°C 0.3 0.1 0.03 Collector to emitter voltage VCE (V) 300 0 0.1 Ta = 75°C 25°C −25°C 0.3 1 3 10 30 Collector current IC (mA) 2 10 30 3 Ta = −25°C 25°C 75°C 1 0.3 0.1 0.03 0.01 100 1 10 3 100 400 300 200 100 −3 −10 −30 100 300 1 000 Cob VCB 500 0 −1 30 Collector current IC (mA) 6 VCB = 10 V Ta = 25°C Transition frequency fT (MHz) Forward current transfer ratio hFE 400 100 3 10 fT I E 500 200 1 600 VCE = 1 V 160 30 Collector current IC (mA) hFE IC 600 Ta = 75°C −25°C 0.3 120 VBE(sat) IC 30 0.01 0.1 80 100 Base to emitter saturation voltage VBE(sat) (V) IB = 3.0 mA 2.5 mA 100 −100 −300 −1 000 Emitter current IE (mA) Collector output capacitance Cob (pF) Collector current IC (mA) Ta = 25°C 100 0 40 Ambient temperature Ta (°C) VCE(sat) IC 120 Collector to emitter saturation voltage VCE(sat) (V) IC VCE 0 IE = 0 f = 1 MHz Ta = 25°C 5 4 3 2 1 0 1 3 10 30 100 Collector to base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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