ETC 2SC3757Q

Transistors
2SC3757
Silicon NPN epitaxial planer type
Unit: mm
For high speed switching
0.40+0.10
–0.05
0.16+0.10
–0.06
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
Symbol
Rating
Unit
VCBO
40
V
Collector to emitter voltage
VCES
40
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
300
mA
Collector current
IC
100
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0 to 0.1
Parameter
1.1+0.3
–0.1
1.1+0.2
–0.1
10°
■ Absolute Maximum Ratings Ta = 25°C
Collector to base voltage
0.4±0.2
2
1
(0.65)
• High-speed switching
• Low collector to emitter saturation voltage VCE(sat)
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
• Allowing pair use with 2SA1738
5°
1.50+0.25
–0.05
■ Features
2.8+0.2
–0.3
3
1: Base
2: Emitter
3: Collector
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package
Marking Symbol: 2Y
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 15 V, IE = 0
0.1
µA
Emitter cutoff current
IEBO
VEB = 4 V, IC = 0
0.1
µA
hFE
VCE = 1 V, IC = 10 mA
Collector to emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 1 mA
Base to emitter saturation voltage
VBE(sat)
IC = 10 mA, IB = 1 mA
Forward current transfer ratio
*
Transition frequency
VCB = 10 V, IE = −10 mA, f = 200 MHz
fT
Collector output capacitance
VCB = 10 V, IE = 0, f = 1 MHz
Cob
Turn-on time
ton
Turn-off time
toff
Storage time
tstg
60
200
0.17
1.0
450
2
17
Refere to the measurement circuit
0.25
V
V
MHz
6
pF
ns
17
ns
10
ns
Note) *: Rank classification
Rank
Q
R
hFE
60 to 120
90 to 200
Marking symbol
2YQ
2YR
1
2SC3757
Transistors
PC  Ta
Switching time measurement circuit
ton , toff Test circuit
0.1 µF
VOUT
VIN = 10 V 3.3 kΩ
50 Ω
3.3 kΩ
50 Ω
VCC = 3 V
10%
VIN
10%
VOUT
1 kΩ
90 Ω
910 Ω
500 Ω
500 Ω
50 Ω
VCC = 10 V
VDD = 2 V
0
VIN
10%
VOUT
10%
90%
90% VOUT
VOUT
A
VIN = 10 V
VDD = −3 V
VIN
Collector power dissipation PC (mW)
tstg Test circuit
0.1 µF
220 Ω
240
ton
toff
tstg
200
160
120
80
40
0
(Waveform at A)
80
2.0 mA
1.5 mA
60
1.0 mA
40
0.5 mA
20
0
0.2
0.4
0.6
0.8
1.0
1.2
IC / IB = 10
10
3
1
25°C
0.3
0.1
0.03
Collector to emitter voltage VCE (V)
300
0
0.1
Ta = 75°C
25°C
−25°C
0.3
1
3
10
30
Collector current IC (mA)
2
10
30
3
Ta = −25°C
25°C
75°C
1
0.3
0.1
0.03
0.01
100
1
10
3
100
400
300
200
100
−3
−10
−30
100
300
1 000
Cob  VCB
500
0
−1
30
Collector current IC (mA)
6
VCB = 10 V
Ta = 25°C
Transition frequency fT (MHz)
Forward current transfer ratio hFE
400
100
3
10
fT  I E
500
200
1
600
VCE = 1 V
160
30
Collector current IC (mA)
hFE  IC
600
Ta = 75°C
−25°C
0.3
120
VBE(sat)  IC
30
0.01
0.1
80
100
Base to emitter saturation voltage VBE(sat) (V)
IB = 3.0 mA
2.5 mA
100
−100 −300 −1 000
Emitter current IE (mA)
Collector output capacitance Cob (pF)
Collector current IC (mA)
Ta = 25°C
100
0
40
Ambient temperature Ta (°C)
VCE(sat)  IC
120
Collector to emitter saturation voltage VCE(sat) (V)
IC  VCE
0
IE = 0
f = 1 MHz
Ta = 25°C
5
4
3
2
1
0
1
3
10
30
100
Collector to base voltage VCB (V)
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2001 MAR