ETC 2SD1823S

Transistor
2SD1823
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
■ Features
●
0.3–0
0.65
+0.1
0.425
1
3
2
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
40
V
Emitter to base voltage
VEBO
15
V
Peak collector current
ICP
100
mA
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
1:Base
2:Emitter
3:Collector
+0.1
0.15–0.05
0.2±0.1
EIAJ:SC–70
S–Mini Type Package
Marking symbol : 1Z
(Ta=25˚C)
Parameter
Symbol
Collector cutoff current
0 to 0.1
(Ta=25˚C)
0.7±0.1
■ Absolute Maximum Ratings
0.9±0.1
0.2
●
1.3±0.1
●
1.25±0.1
0.65
●
High foward current transfer ratio hFE.
Low collector to emitter saturation voltage VCE(sat).
High emitter to base voltage VEBO.
Low noise voltage NV.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
2.0±0.2
●
2.1±0.1
0.425
Conditions
ICBO
VCB = 20V, IE = 0
min
typ
max
Unit
100
nA
1
µA
ICEO
VCE = 20V, IB = 0
Collector to base voltage
VCBO
IC = 10µA, IE = 0
50
V
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
40
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
15
V
Forward current transfer ratio
hFE
*
VCE = 10V, IC = 2mA
400
1000
2000
Collector to emitter saturation voltage
VCE(sat)
IC = 10mA, IB = 1mA
0.05
0.2
Transition frequency
fT
VCB = 10V, IE = –2mA, f = 200MHz
120
*h
FE
V
MHz
Rank classification
Rank
R
hFE
400 ~ 800
Marking Symbol
1ZR
S
T
600 ~ 1200 1000 ~ 2000
1ZS
1ZT
1
2SD1823
Transistor
PC — Ta
IC — VCE
120
160
120
80
IB=100µA
90µA
80µA
70µA
60µA
100
80
50µA
60
40µA
30µA
40
20µA
40
20
60
80 100 120 140 160
2
4
6
8
10
12
1
0.3
Ta=75˚C
25˚C
–25˚C
0.03
3
10
30
100
Collector current IC (mA)
Cob — VCB
IE=0
f=1MHz
Ta=25˚C
6
5
4
3
2
1
0
1
3
10
30
100
Collector to base voltage VCB (V)
0.8
1.2
250
Ta=75˚C
900
25˚C
–25˚C
600
300
0
0.1
0.3
1
3
1.6
2.0
VCB=10V
Ta=25˚C
VCE=10V
10
30
Collector current IC (mA)
8
7
0.4
Base to emitter voltage VBE (V)
1800
1200
3
1
0
fT — I E
1500
10
0.3
40
Collector to emitter voltage VCE (V)
Forward current transfer ratio hFE
30
0.01
0.1
60
hFE — IC
IC/IB=10
0.1
80
0
0
VCE(sat) — IC
100
–25˚C
20
Transition frequency fT (MHz)
40
Ta=75˚C
10µA
0
20
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
25˚C
100
120
Collector current IC (mA)
200
0
Collector output capacitance Cob (pF)
VCE=10V
Ta=25˚C
140
0
2
IC — VBE
160
Collector current IC (mA)
Collector power dissipation PC (mW)
240
100
200
150
100
50
0
– 0.1 – 0.3
–1
–3
–10
–30
Emitter current IE (mA)
–100
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2001 MAR