Transistor 2SD1823 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm ■ Features ● 0.3–0 0.65 +0.1 0.425 1 3 2 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 15 V Peak collector current ICP 100 mA Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1:Base 2:Emitter 3:Collector +0.1 0.15–0.05 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : 1Z (Ta=25˚C) Parameter Symbol Collector cutoff current 0 to 0.1 (Ta=25˚C) 0.7±0.1 ■ Absolute Maximum Ratings 0.9±0.1 0.2 ● 1.3±0.1 ● 1.25±0.1 0.65 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.0±0.2 ● 2.1±0.1 0.425 Conditions ICBO VCB = 20V, IE = 0 min typ max Unit 100 nA 1 µA ICEO VCE = 20V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 40 V Emitter to base voltage VEBO IE = 10µA, IC = 0 15 V Forward current transfer ratio hFE * VCE = 10V, IC = 2mA 400 1000 2000 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.05 0.2 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 120 *h FE V MHz Rank classification Rank R hFE 400 ~ 800 Marking Symbol 1ZR S T 600 ~ 1200 1000 ~ 2000 1ZS 1ZT 1 2SD1823 Transistor PC — Ta IC — VCE 120 160 120 80 IB=100µA 90µA 80µA 70µA 60µA 100 80 50µA 60 40µA 30µA 40 20µA 40 20 60 80 100 120 140 160 2 4 6 8 10 12 1 0.3 Ta=75˚C 25˚C –25˚C 0.03 3 10 30 100 Collector current IC (mA) Cob — VCB IE=0 f=1MHz Ta=25˚C 6 5 4 3 2 1 0 1 3 10 30 100 Collector to base voltage VCB (V) 0.8 1.2 250 Ta=75˚C 900 25˚C –25˚C 600 300 0 0.1 0.3 1 3 1.6 2.0 VCB=10V Ta=25˚C VCE=10V 10 30 Collector current IC (mA) 8 7 0.4 Base to emitter voltage VBE (V) 1800 1200 3 1 0 fT — I E 1500 10 0.3 40 Collector to emitter voltage VCE (V) Forward current transfer ratio hFE 30 0.01 0.1 60 hFE — IC IC/IB=10 0.1 80 0 0 VCE(sat) — IC 100 –25˚C 20 Transition frequency fT (MHz) 40 Ta=75˚C 10µA 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 100 120 Collector current IC (mA) 200 0 Collector output capacitance Cob (pF) VCE=10V Ta=25˚C 140 0 2 IC — VBE 160 Collector current IC (mA) Collector power dissipation PC (mW) 240 100 200 150 100 50 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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