Power Transistors 2SD2242, 2SD2242A Silicon NPN triple diffusion planar type Darlington Unit: mm 4.2±0.2 For power amplification Collector to base voltage 2SD2242 Collector to emitter voltage 2SD2242 Rating VCBO Unit 60 2SD2242A V VCEO 60 2SD2242A 90˚ 0.65±0.1 0.35±0.1 1.05±0.1 2.5±0.2 V VEBO 5 V Peak collector current ICP 8 A TC = 25°C IC 4 A PC 15 W 2.5±0.2 1 2 3 1: Base 2: Collector 3: Emitter MT-4 (MT4 Type Package) Internal Connection C Ta = 25°C 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C B ■ Electrical Characteristics TC = 25°C Parameter 2SD2242 Collector cutoff current 2SD2242 ICBO 2SD2242A ICEO 2SD2242A Emitter cutoff current 2SD2242 Collector to emitter voltage E Symbol Collector cutoff current Conditions Max Unit VCB = 60 V, IE = 0 200 µA VCB = 80 V, IE = 0 200 VCE = 30 V, IB = 0 500 VCE = 40 V, IB = 0 500 Base to emitter voltage Collector to emitter saturation voltage Min Typ 2 µA µA IEBO VEB = 5 V, IC = 0 VCEO IC = 30 mA, IB = 0 hFE1 VCE = 3 V, IC = 0.5 A 1 000 hFE2 * VCE = 3 V, IC = 3 A 2 000 VBE VCE = 3 V, IC = 3 A 2.5 V VCE(sat) IC = 3 A, IB = 12 mA 2 V IC = 5 A, IB = 20 mA 4 2SD2242A Forward current transfer ratio 0.55±0.1 0.55±0.1 80 Collector current C 1.0 2.25±0.2 0.65±0.1 80 Emitter to base voltage Collector power dissipation 18.0±0.5 Solder Dip Symbol 1.2±0.1 1.48±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter 2.5±0.1 • High forward current transfer ratio hFE • High-speed switching • Allowing supply with the radial taping 5.0±0.1 1.0±0.2 13.0±0.2 ■ Features 10.0±0.2 60 V 80 10 000 Transition frequency fT VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC = 3 A, IB1 = 12 mA, IB2 = −12 mA, 0.5 µs Storage time tstg VCC = 50 V 4 µs Fall time tf 1 µs Note) *: Rank classification Rank hFE2 Q R 2 000 to 5 000 4 000 to 10 000 1 2SD2242, 2SD2242A Power Transistors PC T a IC VCE 10 TC=25˚C 15 (1) 10 5 IB=4.0mA 8 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 6 1.0mA 0.5mA 4 25˚C 6 TC=100˚C –25˚C 4 2 2 0 40 60 80 100 120 140 160 0 0 2 4 6 8 10 VCE(sat) IC Forward current transfer ratio hFE 25˚C 1 TC=100˚C –25˚C 0.3 0.1 0.03 0.1 0.3 1 3 TC=100˚C 104 1000 25˚C –25˚C 103 102 Collector current IC (A) 0.1 0.3 1 3 300 100 30 10 3 1 0.1 10 Collector current IC (A) 0.3 1 3 10 30 Non repetitive pulse TC=25˚C 10 ICP t=1ms IC 10ms 3 DC 1 0.3 2SD2242 2SD2242A 0.1 0.03 0.01 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Thermal resistance Rth(t) (˚C/W) 1000 30 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 100 (1) (2) 10 1 0.1 10–3 10–2 10–1 100 Collector to base voltage VCB (V) Rth(t) t Area of safe operation (ASO) 100 3.2 IE=0 f=1MHz TC=25˚C 3000 10 0.01 0.03 10 2.4 Cob VCB VCE=3V 10 1.6 10000 IC/IB=250 30 0.01 0.01 0.03 0.8 Base to emitter voltage VBE (V) hFE IC 105 100 3 0 Collector to emitter voltage VCE (V) Collector output capacitance Cob (pF) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 8 (2) 0 Collector current IC (A) VCE=3V Collector current IC (A) (1) TC=Ta (2) Without heat sink (PC=2.0W) 0 2 IC VBE 10 Collector current IC (A) Collector power dissipation PC (W) 20 1 10 Time t (s) 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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