Power Transistors 2SB1299 Silicon PNP epitaxial planar type Unit: mm 14.0±0.5 • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 10.0±0.2 4.2±0.2 5.5±0.2 7.5±0.2 4.2±0.2 2.7±0.2 φ 3.1±0.1 1.4±0.1 Solder Dip (4.0) ■ Features 16.7±0.3 0.7±0.1 For power amplification Complementary to 2SD1273 Parameter 2.54±0.3 Symbol Rating Unit VCBO −60 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −6 V Peak collector current ICP −6 A Collector current IC −3 A IB −1 A PC 40 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Base current Collector power dissipation TC = 25°C Ta = 25°C 0.5+0.2 –0.1 0.8±0.1 ■ Absolute Maximum Ratings TC = 25°C Collector to base voltage 1.3±0.2 5.08±0.5 1 : Base 2 : Collector 3 : Emitter EIAJ : SC-67 TO-220F Package 1 2 3 2 ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current Max Unit ICBO VCB = −60 V, IE = 0 Conditions Min Typ −100 µA ICEO VCE = −40 V, IB = 0 −100 µA Emitter cutoff current IEBO VEB = −6 V, IC = 0 −100 µA Collector to emitter voltage VCEO Forward current transfer ratio * Collector to emitter saturation voltage Transition frequency IC = −25 mA, IB = 0 −60 hFE VCE = −4 V, IC = − 0.5 A 300 VCE(sat) IC = −2 A, IB = − 0.05 A fT VCE = −12 V, IC = − 0.2 A, f = 10 MHz V 700 −1 30 V MHz Note) *: Rank classification Rank Q P hFE 300 to 500 400 to 700 1 2SB1299 Power Transistors PC T a IC VCE 40 (1) 30 20 (4) (2) 10 –6 TC=25˚C –10 –5 IB=–100mA –80mA –60mA –8 –40mA –6 –20mA –4 –10mA –5mA –2 –3 –2 25˚C TC=125˚C –25˚C –2mA 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –2 –4 –6 –8 –10 –12 Transition frequency fT (MHz) Forward current transfer ratio hFE TC=100˚C –25˚C – 0.1 – 0.03 –1 –3 25˚C 1000 25˚C –3 – 0.3 TC=100˚C –25˚C 300 100 30 10 – 0.01 – 0.03 – 0.1 – 0.3 –10 Collector current IC (A) Cob VCB –1 –3 100 30 10 3 30 10 3 3 Collector current IC (A) 100 Pulsed tw=1ms Duty cycle=1% IC/IB=40 (–IB1=IB2) VCC=–50V TC=25˚C 10 3 tf 1 ton tstg 0.3 –1 –3 –10 Area of safe operation (ASO) 10 30 –2.0 Collector current IC (A) ton, tstg, tf IC Switching time ton,tstg,tf (µs) 300 300 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 100 IE=0 f=1MHz TC=25˚C –1.6 VCE=–12V f=10MHz TC=25˚C Collector current IC (A) 1000 –1.2 fT I C 3000 –10 – 0.8 1000 VCE=–4V IC/IB=40 –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 – 0.4 Base to emitter voltage VBE (V) hFE IC 10000 –1 0 Collector to emitter voltage VCE (V) VCE(sat) IC –100 Collector to emitter saturation voltage VCE(sat) (V) –4 –1 (3) 0 Collector output capacitance Cob (pF) VCE=–4V Collector current IC (A) 50 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 0.1 ICP t=1ms IC Non repetitive pulse TC=25˚C 10ms 1 DC 0.3 0.1 0.03 0.03 1 –1 0.01 –3 –10 –30 –100 Collector to base voltage VCB (V) 2 IC VBE –12 Collector current IC (A) Collector power dissipation PC (W) 60 0 –2 –4 –6 Collector current IC (A) –8 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistors 2SB1299 Rth(t) t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. 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