Power Transistors 2SD2138, 2SD2138A Silicon NPN triple diffusion planar type Darlington Unit: mm 4.2±0.2 For power amplification Complementary to 2SB1418 and 2SB1418A ■ Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage 2SD2138 Collector to emitter voltage 2SD2138 Symbol Rating Unit VCBO 60 V 2SD2138A 60 2SD2138A 90˚ 2.5±0.1 0.65±0.1 0.65±0.1 0.35±0.1 1.05±0.1 0.55±0.1 0.55±0.1 2.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-4 (MT4 Type Package) V 80 VEBO 5 V Peak collector current ICP 4 A Collector current IC 2 A PC 15 W Ta = 25°C C 1.0 2.25±0.2 1 2 3 Emitter to base voltage TC = 25°C 1.2±0.1 1.48±0.2 80 VCEO 5.0±0.1 1.0±0.2 13.0±0.2 • High forward current transfer ratio hFE which has satisfactory linearity • Allowing supply with the radial taping 18.0±0.5 Solder Dip ■ Features Collector power dissipation 10.0±0.2 Internal Connection C B 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C E ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current 2SD2138 Collector cutoff current 2SD2138 Max Unit ICBO VCE = 60 V, IE = 0 100 µA VCE = 80 V, IE = 0 100 ICEO VCE = 30 V, IB = 0 100 VCE = 40 V, IB = 0 100 IEBO VEB = 5 V, IC = 0 100 VCEO IC = 30 mA, IB = 0 2SD2138A 2SD2138A Emitter cutoff current 2SD2138 Collector to emitter voltage Conditions 2SD2138A Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Min Typ 60 µA µA V 80 hFE1 VCE = 4 V, IC = 1 A 1 000 hFE2 * VCE = 4 V, IC = 2 A 2 000 VBE VCE = 4 V, IC = 2 A 2.8 V VCE(sat) IC = 2 A, IB = 8 mA 2.5 V 10 000 Transition frequency fT VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC = 2 A, IB1 = 8 mA, IB2 = −8 mA, 0.4 µs Turn-off time toff VCC = 50 V 4 µs Note) *: Rank classification Rank hFE2 Q R 2 000 to 5 000 4 000 to 10 000 1 2SD2138, 2SD2138A Power Transistors PC T a IC VCE 5 15 (1) 10 5 IB=2mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 4 3 0.4mA 0.2mA 2 1 (2) 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 IC VBE Forward current transfer ratio hFE 5 –25˚C 4 3 2 1 3 104 TC=–25˚C 1 25˚C 100˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 4 0.3 1 3 25˚C –25˚C IE=0 f=1MHz TC=25˚C 300 100 30 10 3 1 0.1 0.3 1 3 10 1 Collector current IC (A) 3 10 30 100 Collector to base voltage VCB (V) Rth(t) t Area of safe operation (ASO) Non repetitive pulse TC=25˚C 30 Thermal resistance Rth(t) (˚C/W) 10000 100 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 1000 10 ICP 3 t=1ms IC 1 DC 0.3 10ms 0.03 0.01 1 3 10 30 2SD2138A 2SD2138 0.1 100 300 1000 Collector to emitter voltage VCE (V) 100 (1) (2) 10 1 0.1 10–4 10 Cob VCB 103 Base to emitter voltage VBE (V) Collector current IC (A) 3 1000 TC=100˚C 102 0.01 0.03 0 2 10 Collector current IC (A) VCE=4V VCE=4V 25˚C 1 30 hFE IC 105 0 12 IC/IB=250 Collector to emitter voltage VCE (V) 6 TC=100˚C 10 100 Collector output capacitance Cob (pF) 0 2 Collector to emitter saturation voltage VCE(sat) (V) TC=25˚C (1) TC=Ta (2) Without heat sink (PC=2.0W) 0 Collector current IC (A) VCE(sat) IC 6 Collector current IC (A) Collector power dissipation PC (W) 20 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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