Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1323 Unit: mm 3.0±0.2 4.0±0.2 ■ Features ■ Absolute Maximum Ratings marking (Ta=25˚C) 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 2 3 2.0±0.2 ● 15.6±0.5 ● Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. 0.7±0.1 ● +0.2 0.45–0.1 ● 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 30 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V Forward current transfer ratio hFE * VCE = 10V, IC = 1mA 70 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA Base to emitter voltage VBE VCE = 10V, IC = 1mA Transition frequency fT VCB = 10V, IE = –1mA, f = 200MHz Noise figure NF VCB = 10V, IE = –1mA, f = 5MHz 4.0 dB Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz 1.5 pF Reverse transfer impedance Zrb VCB = 10V, IE = –1mA, f = 2MHz 50 Ω *h FE 220 0.1 150 V 0.7 V 300 MHz 2.8 Rank classification Rank B C hFE 70 ~ 140 110 ~ 220 1 2SC3314 Transistor PC — Ta IC — VCE 60 300 200 100 50 160 IB=100µA 120 80µA 80 60µA 40µA 40 25˚C 40 Ta=75˚C –25˚C 30 20 10 20µA 0 60 80 100 120 140 160 0 0 2 10 3 1 Ta=75˚C 25˚C 0.1 –25˚C 0.03 3 10 30 10 – 0.3 –1 –3 Emitter current IE (mA) –10 Common emitter reverse transfer capacitance Cre (pF) 20 1.6 2.0 25˚C 120 –25˚C 80 40 600 500 VCE=10V 400 6V 300 200 100 0.3 1 3 10 30 0 – 0.1 – 0.3 100 24 f=10.7MHz Ta=25˚C 2.5 20 2.0 1mA IC=3mA 1.0 0.5 0 0.1 –3 –10 –30 –100 PG — IE 3.0 1.5 –1 Emitter current IE (mA) Cre — VCE 30 1.2 700 Collector current IC (mA) VCB=10V f=2MHz Ta=25˚C 0.8 Ta=25˚C Ta=75˚C 160 0 0.1 100 40 0 – 0.1 0.4 Base to emitter voltage VBE (V) 800 Zrb — IE 50 0 fT — I E 200 Collector current IC (mA) 60 12 VCE=10V Forward current transfer ratio hFE 30 1 10 240 IC/IB=10 0.3 8 hFE — IC 100 0.01 0.1 6 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.3 4 Transition frequency fT (MHz) 40 Power gain PG (dB) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 200 400 0 Reverse transfer impedance Zrb (Ω) VCE=10V Ta=25˚C 0 2 IC — VBE 240 Collector current IC (mA) Collector power dissipation PC (mW) 500 VCE=10V f=100MHz Ta=25˚C 16 12 8 4 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 2SC3314 Transistor NF — IE Cob — VCB 12 5 Noise figure NF (dB) 10 Collector output capacitance Cob (pF) VCB=6V f=100MHz Rg=50Ω Ta=25˚C 8 6 4 2 0 – 0.1 IE=0 f=1MHz Ta=25˚C 4 3 2 1 0 – 0.3 –1 –3 Emitter current IE (mA) –10 1 3 10 30 100 Collector to base voltage VCB (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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