ETC 2SC3931D

Transistor
2SC3931
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
2.1±0.1
■ Features
+0.1
0.3–0
0.65
1.3±0.1
0.65
1
3
2
Symbol
Ratings
Unit
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
3
V
Collector current
IC
15
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
+0.1
0 to 0.1
Parameter
0.15–0.05
(Ta=25˚C)
Collector to base voltage
■ Electrical Characteristics
0.425
0.2
■ Absolute Maximum Ratings
1.25±0.1
0.7±0.1
●
2.0±0.2
●
Optimum for RF amplification of FM/AM radios.
High transition frequency fT.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.9±0.1
●
0.425
1:Base
2:Emitter
3:Collector
0.2±0.1
EIAJ:SC–70
S–Mini Type Package
Marking symbol : U
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
30
Unit
Collector to base voltage
VCBO
IC = 10µA, IE = 0
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
3
Forward current transfer ratio
hFE*
VCB = 6V, IE = –1mA
65
Base to emitter voltage
VBE
VCB = 6V, IE = 1mA
Transition frequency
fT
VCB = 6V, IE = –1mA, f = 200MHz
Common emitter reverse transfer capacitance
Cre
VCE = 6V, IC = 1mA, f = 10.7MHz
0.8
Power gain
PG
VCB = 6V, IE = –1mA, f = 100MHz
24
dB
Noise figure
NF
VCB = 6V, IE = –1mA, f = 100MHz
3.3
dB
*h
FE
450
V
V
260
0.72
V
650
MHz
1
pF
Rank classification
Rank
C
D
hFE
65 ~ 160
100 ~ 260
Marking Symbol
UC
UD
1
Transistor
2SC3931
PC — Ta
IC — VCE
12
Ta=25˚C
10
160
120
80
40
80µA
8
60µA
6
40µA
4
20µA
80 100 120 140 160
6
Collector to emitter saturation voltage VCE(sat) (V)
VCE=6V
25˚C
–25˚C
20
15
10
5
0
0
0.4
0.8
1.2
12
1.6
2.0
30
10
3
1
0.3
25˚C
0.1
0.01
0.1
Ta=75˚C
–25˚C
0.03
0.3
1
3
1000
800
600
400
200
–10
–30
Emitter current IE (mA)
–100
Reverse transfer impedance Zrb (Ω)
VCB=6V
Ta=25˚C
10
30
300
240
Ta=75˚C
180
25˚C
–25˚C
120
60
0
0.1
100
0.3
60
40
20
– 0.3
–1
3
10
30
100
Cre — VCE
80
0
– 0.1
1
Collector current IC (mA)
VCB=6V
f=2MHz
Ta=25˚C
100
180
VCE=6V
Zrb — IE
120
120
360
IC/IB=10
fT — IE
–3
60
Base current IB (µA)
Collector current IC (mA)
1200
–1
0
hFE — IC
100
Base to emitter voltage VBE (V)
0
– 0.1 – 0.3
18
VCE(sat) — IC
30
Ta=75˚C
4
Collector to emitter voltage VCE (V)
IC — VBE
25
6
0
0
Forward current transfer ratio hFE
60
–3
Emitter current IE (mA)
–10
Common emitter reverse transfer capacitance Cre (pF)
40
8
2
0
20
Ambient temperature Ta (˚C)
Collector current IC (mA)
10
2
0
Transition frequency fT (MHz)
VCE=6V
Ta=25˚C
IB=100µA
Collector current IC (mA)
200
0
2
IC — I B
12
Collector current IC (mA)
Collector power dissipation PC (mW)
240
2.4
IC=1mA
f=10.7MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
0.1
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
Transistor
2SC3931
Cob — VCB
PG — IE
0.8
0.6
0.4
12
f=100MHz
Rg=50Ω
Ta=25˚C
35
30
VCE=10V
25
6V
20
15
10
8
6
4
0.2
VCE=6V, 10V
2
5
0
5
10
15
20
25
0
– 0.1 – 0.3
30
Collector to base voltage VCB (V)
Reverse transfer susceptance bre (mS)
150
–7mA
100
–2mA
100
12
58
10
IE=– 0.5mA
–1mA
8
6
58
25
4
25
2
f=10.7MHz
0
0
3
–30
6
9
0
– 0.1 – 0.3
–100
–1
12
15
Input conductance gie (mS)
–10
–30
–100
bfe — gfe
0
10.7
25
yre=gre+jbre
VCE=10V
–1
–4mA
–2
–1mA
58
IE=–7mA
–3
–4
100
–5
10.7
58
– 0.4mA
–1mA
100
–20
150
–2mA
–40
150
–4mA
100
58
–60
f=150MHz
IE=–7mA
100
–80
–100
f=150MHz
–6
– 0.5
–3
Emitter current IE (mA)
bre — gre
–4mA
16
14
–10
0
yie=gie+jbie
VCE=10V
18
–3
Emitter current IE (mA)
bie — gie
20
–1
Forward transfer susceptance bfe (mS)
0
Input susceptance bie (mS)
f=100MHz
Rg=50kΩ
Ta=25˚C
10
Noise figure NF (dB)
IE=0
f=1MHz
Ta=25˚C
1.0
NF — IE
40
Power gain PG (dB)
Collector output capacitance Cob (pF)
1.2
yfe=gfe+jbfe
VCE=10V
–120
– 0.4
– 0.3
– 0.2
– 0.1
0
Reverse transfer conductance gre (mS)
0
20
40
60
80
Forward transfer conductance
100
gfe (mS)
boe — goe
IE=– 0.5mA
–1mA
Output susceptance boe (mS)
1.2
1.0
150
–2mA
–4mA
100
0.8
–7mA
0.6
58
0.4
25
0.2
yoe=goe+jboe
VCE=10V
f=10.7MHz
0
0
2
4
6
8
10
Output conductance goe (mS)
3
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2001 MAR