Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type For low-voltage switching Complementary to 2SB1070 and 2SB1070A 1.1max. 2.0 1.5max. 10.5min. ● 1.0±0.1 1.5±0.1 10.0±0.3 Low collector to emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. ● Unit: mm 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 0.8±0.1 0.5max. 2.54±0.3 20 emitter voltage 2SD1538A 40 VEBO 5 V Peak collector current ICP 8 A Collector current IC 4 A dissipation Ta=25°C Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol 2SD1538 current 2SD1538A 0 to 0.4 1.1 max. 5.08±0.5 1 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 (TC=25˚C) Parameter Collector cutoff R0.5 R0.5 2.54±0.3 W 1.3 ■ Electrical Characteristics 1.0±0.1 0.8±0.1 25 PC 6.0±0.3 V Emitter to base voltage Collector power TC=25°C 3.4±0.3 14.7±0.5 VCEO Unit: mm 8.5±0.2 +0.4 2SD1538 V 50 3.0–0.2 Collector to 40 VCBO 4.4±0.5 2SD1538A +0 2SD1538 base voltage Unit 1.5–0.4 Collector to Ratings 1:Base 2:Collector 3:Emitter N Type Package 3 10.0±0.3 Symbol 2 2.0 Parameter 1 4.4±0.5 ■ 5.08±0.5 Absolute Maximum Ratings (TC=25˚C) Conditions min typ max Unit VCB = 40V, IE = 0 50 VCB = 50V, IE = 0 50 IEBO VEB = 5V, IC = 0 50 VCEO IC = 10mA, IB = 0 hFE1 VCE = 2V, IC = 0.1A 45 hFE2* VCE = 2V, IC = 1A 90 Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.1A 0.5 V Base to emitter saturation voltage VBE(sat) IC = 2A, IB = 0.1A 1.5 V Transition frequency fT VCE = 5V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf Emitter cutoff current Collector to emitter 2SD1538 voltage 2SD1538A Forward current transfer ratio *h FE2 ICBO IC = 2A, IB1 = 0.2A, IB2 = – 0.2A, VCC = 20V 20 µA µA V 40 260 120 MHz 0.2 µs 0.5 µs 0.1 µs Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 Power Transistors 2SD1538, 2SD1538A IC — VCE (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=1.3W) 35 30 (1) 25 TC=25˚C 5 Collector current IC (A) Collector power dissipation PC (W) VCE(sat) — IC 6 20 15 (2) 10 40mA 4 30mA 3 20mA 2 10mA 1 (3) 5 IB=60mA 50mA 5mA (4) 0 0 0 25 50 75 100 125 150 0 Ambient temperature Ta (˚C) 2 VBE(sat) — IC 10 12 25˚C TC=–25˚C 100˚C 0.1 0.03 3000 1 3 TC=100˚C 300 25˚C 100 –25˚C 30 10 3 0.3 1 3 10 30 100 Area of safe operation (ASO) Non repetitive pulse TC=25˚C tstg ton tf 0.1 10 ICP IC t=1ms 3 300ms 0.3 0.1 0.03 0.03 0.01 0.01 2 3 4 5 6 7 Collector current IC (A) 8 10ms 1 2SD1538 Collector current IC (A) 30 2SD1538A Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=20V TC=25˚C 1 0.1 0.3 1 3 10 VCE=5V f=10MHz TC=25˚C 300 100 30 10 1 3 10 30 100 300 1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 100 0 0.01 0.01 0.03 3 Collector current IC (A) ton, tstg, tf — IC 0.3 0.03 1000 1 0.1 10 10 1 –25˚C 0.1 3000 Collector current IC (A) 3 TC=100˚C 25˚C 0.3 Collector current IC (A) Transition frequency fT (MHz) 3 0.3 1 fT — IC 1000 0.1 3 VCE=2V 10 0.3 10 10000 IC/IB=10 30 1 IC/IB=10 30 hFE — IC Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 8 10000 0.01 0.01 0.03 2 6 100 Collector to emitter voltage VCE (V) 100 Switching time ton,tstg,tf (µs) 4 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 40 1000 Collector to emitter voltage VCE (V) 10 Power Transistors 2SD1538, 2SD1538A Rth(t) — t Thermal resistance Rth(t) (˚C/W) 102 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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