ETC 2SC3940AR

Transistor
2SC3940, 2SC3940A
Silicon NPN epitaxial planer type
For low-frequency output amplification and driver amplification
Complementary to 2SA1534 and 2SA1534A
Unit: mm
5.0±0.2
4.0±0.2
Low collector to emitter saturation voltage VCE(sat).
Allowing supply with the radial taping.
Parameter
Symbol
Collector to
2SC3940
base voltage
2SC3940A
Collector to
2SC3940
Ratings
30
VCBO
Unit
V
60
+0.15
0.45 –0.1
25
VCEO
emitter voltage 2SC3940A
0.7±0.1
(Ta=25˚C)
1.27
V
50
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1.5
A
Collector current
IC
1
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
13.5±0.5
■ Absolute Maximum Ratings
0.7±0.2
●
1.27
+0.15
0.45 –0.1
2.3±0.2
●
8.0±0.2
■ Features
1:Emitter
2:Collector
3:Base
TO–92NL Package
1 2 3
2.54±0.15
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
0.1
µA
ICBO
VCB = 20V, IE = 0
VCBO
IC = 10µA, IE = 0
VCEO
IC = 2mA, IB = 0
VEBO
IE = 10µA, IC = 0
5
hFE1*1
VCE = 10V, IC = 500mA*2
85
hFE2
VCE = 5V, IB = 1A*2
50
VCE(sat)
IC = 500mA, IB = 50mA*2
0.2
0.4
Base to emitter saturation voltage
VBE(sat)
IB = 500mA, Ia =
50mA*2
0.85
1.2
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
200
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
11
Collector cutoff current
Collector to base
2SC3940
voltage
2SC3940A
Collector to emitter
2SC3940
voltage
2SC3940A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
30
V
60
25
V
50
V
340
FE1
V
MHz
20
*2
*1h
V
pF
Pulse measurement
Rank classification
Rank
Q
R
S
hFE1
85 ~ 170
120 ~ 240
170 ~ 340
1
Transistor
2SC3940, 2SC3940A
PC — Ta
IC — VCE
1.2
IC — I B
1.5
1.2
1.25
0.8
0.6
0.4
0.2
8mA
1.0
7mA
6mA
0.75
5mA
4mA
3mA
0.5
2mA
60
80 100 120 140 160
Ambient temperature Ta (˚C)
2
1
Ta=75˚C
25˚C
–25˚C
0.03
0.01
0.003
0.001
0.01 0.03
0.1
0.3
1
3
3
25˚C
Ta=–25˚C
1
75˚C
0.3
0.1
0.03
0.1
0.3
120
80
40
1
3
Emitter current IE (mA)
–100
8
10
12
500
400
300
Ta=75˚C
200
25˚C
–25˚C
100
0
0.01 0.03
10
0.1
0.3
1
3
10
Collector current IC (A)
VCER — RBE
120
IE=0
f=1MHz
Ta=25˚C
40
30
20
10
0
–30
6
VCE=10V
Cob — VCB
160
4
600
50
–10
2
Base current IB (mA)
Collector current IC (A)
VCB=10V
Ta=25˚C
–3
0
hFE — IC
10
0.01
0.01 0.03
10
Collector output capacitance Cob (pF)
Transition frequency fT (MHz)
10
30
fT — IE
0
–1
8
IC/IB=10
Collector current IC (A)
200
6
100
Base to emitter saturation voltage VBE(sat) (V)
Collector to emitter saturation voltage VCE(sat) (V)
3
0.1
4
VBE(sat) — IC
IC/IB=10
0.3
0.4
Collector to emitter voltage VCE (V)
VCE(sat) — IC
10
0.6
0
0
Forward current transfer ratio hFE
40
1
3
10
30
100
Collector to base voltage VCB (V)
Collector to emitter voltage VCER (V)
20
0.8
0.2
1mA
0
0
2
1.0
IB=10mA
9mA
0.25
0
VCE=10V
Ta=25˚C
Collector current IC (A)
1.0
Collector current IC (A)
Collector power dissipation PC (W)
Ta=25˚C
IC=10mA
Ta=25˚C
100
80
60
2SC3940A
40
2SC3940
20
0
0.1
0.3
1
3
10
30
100
Base to emitter resistance RBE (kΩ)
Transistor
2SC3940, 2SC3940A
ICEO — Ta
104
Area of safe operation (ASO)
10
VCE=10V
Single pulse
Ta=25˚C
3
10
IC
t=10ms
0.3
t=1s
0.1
0.03
0.01
0.003
1
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
0.001
0.1
0.3
1
3
10
2SC3940A
ICEO (Ta)
ICEO (Ta=25˚C)
102
1
2SC3940
Collector current IC (A)
ICP
103
30
100
Collector to emitter voltage VCE (V)
3
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2001 MAR