Transistor 2SD2321 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 3.0±0.2 4.0±0.2 ■ Features marking ■ Absolute Maximum Ratings (Ta=25˚C) 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 7 V Collector current IC 5 A Peak collector current ICP 8 A Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 3 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Parameter Symbol Collector cutoff current 2 Conditions min typ VCB = 10V, IE = 0 0.1 µA VCE = 10V, IB = 0 1.0 µA 0.1 µA IEBO VEB = 7V, IC = 0 VCEO IC = 1mA, IB = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 hFE1*1 VCE = 2V, IC = 0.5A*2 230 hFE2 VCE = 2V, IC = 2A*2 150 Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.1A*2 0.28 Transition frequency fT VCB = 6V, IE = –50mA, f = 200MHz 150 Collector output capacitance Cob VCB = 20V, IE = 0, f = 1MHz 26 20 V 7 V 600 1.0 V MHz 50 *2 FE1 Unit ICEO Collector to emitter voltage *1h max ICBO Emitter cutoff current Forward current transfer ratio 2.0±0.2 15.6±0.5 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. 0.7±0.1 ● +0.2 0.45–0.1 ● pF Pulse measurement Rank classification Rank Q R hFE1 230 ~ 380 340 ~ 600 1 2SD2321 Transistor PC — Ta IC — VCE 6 IB=7mA 300 200 100 6mA 1.6 5mA 4mA 1.2 3mA 0.8 2mA 0.4 60 80 100 120 140 160 0.4 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 0.8 1.2 1.6 2.0 2.4 0 3 30 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 10 0.1 0.3 fT — IE 1 3 250 200 150 100 50 –3 Emitter current IE (A) 400 25˚C 300 –25˚C 200 100 –10 0.1 0.3 1 3 10 Area of safe operation (ASO) IE=0 f=1MHz Ta=25˚C 80 60 40 Single pulse Ta=25˚C 30 10 ICP 3 IC t=10ms t=1s 1 0.3 0.1 20 0.03 0 –1 Ta=75˚C 100 Collector current IC (A) Collector output capacitance Cob (pF) 300 2.0 Collector current IC (A) Cob — VCB 350 1.6 500 0 0.01 0.03 10 100 VCB=6V Ta=25˚C 1.2 VCE=2V Collector current IC (A) 400 0.8 600 IC/IB=30 Collector current IC (A) 0 – 0.01 – 0.03 – 0.1 – 0.3 0.4 Base to emitter voltage VBE (V) hFE — IC 100 Base to emitter saturation voltage VBE(sat) (V) 3 0.1 2 VBE(sat) — IC IC/IB=30 0.3 25˚C 3 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 –25˚C 0 0 Forward current transfer ratio hFE 40 Ta=75˚C 4 1 1mA 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 5 Collector current IC (A) 2.0 400 0 Transition frequency fT (MHz) VCE=2V Ta=25˚C 0 2 IC — VBE 2.4 Collector current IC (A) Collector power dissipation PC (mW) 500 1 3 10 30 100 Collector to base voltage VCB (V) 0.01 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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