ETC 2SC3939S

Transistor
2SC3939
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA1533
Unit: mm
5.0±0.2
4.0±0.2
■ Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
80
V
Collector to emitter voltage
VCEO
80
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1
A
Collector current
IC
0.5
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
0.7±0.1
13.5±0.5
●
High collector to emitter voltage VCEO.
Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
Allowing supply with the radial taping.
0.7±0.2
●
+0.15
0.45 –0.1
1.27
1.27
+0.15
0.45 –0.1
2.3±0.2
●
8.0±0.2
■ Features
1:Emitter
2:Collector
3:Base
TO–92NL Package
1 2 3
2.54±0.15
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
0.1
µA
Collector cutoff current
ICBO
VCB = 20V, IE = 0
Collector to base voltage
VCBO
IC = 10µA, IE = 0
80
V
Collector to emitter voltage
VCEO
IC = 100µA, IB = 0
80
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
5
V
hFE1
Forward current transfer ratio
*1
VCE = 10V, IC =
150mA*2
130
330
hFE2
VCE = 5V, IC = 500mA*2
Collector to emitter saturation voltage
VCE(sat)
IC = 300mA, IB = 30mA*2
0.2
0.4
V
Base to emitter saturation voltage
VBE(sat)
IC = 300mA, IB = 30mA*2
0.85
1.2
V
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
120
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
11
50
100
MHz
20
*2
*1h
FE1
pF
Pulse measurement
Rank classification
Rank
R
S
hFE1
130 ~ 220
185 ~ 330
1
2SC3939
Transistor
PC — Ta
IC — VCE
1.2
IC — I B
1.2
1.2
1.0
0.8
0.6
0.4
0.2
8mA
7mA
0.8
6mA
5mA
0.6
4mA
3mA
0.4
2mA
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
2
IC/IB=10
8
10
0
3
1
0.3
Ta=75˚C
25˚C
–25˚C
0.03
0.01
0.003
0.001
30
10
3
25˚C
Ta=–25˚C
1
10
30
100
300
75˚C
0.3
0.1
0.03
1000
3
10
100
300
1000
40
–10
Ta=75˚C
200
25˚C
–25˚C
150
100
50
3
–30
Emitter current IE (mA)
–100
10
30
100
300
1000
Collector current IC (mA)
ICBO — Ta
104
VCB=20V
IE=0
f=1MHz
Ta=25˚C
40
103
30
20
102
10
10
0
–3
250
1
ICBO (Ta)
ICBO (Ta=25˚C)
80
0
–1
30
50
Collector output capacitance Cob (pF)
120
10
VCE=10V
Cob — VCB
160
8
300
Collector current IC (mA)
VCB=10V
Ta=25˚C
6
0
1
fT — IE
200
4
hFE — IC
0.01
3
2
Base current IB (mA)
IC/IB=10
Collector current IC (mA)
Transition frequency fT (MHz)
6
100
Base to emitter saturation voltage VBE(sat) (V)
Collector to emitter saturation voltage VCE(sat) (V)
4
VBE(sat) — IC
10
1
0.4
Collector to emitter voltage VCE (V)
VCE(sat) — IC
0.1
0.6
0
0
Forward current transfer ratio hFE
20
0.8
0.2
1mA
0
0
2
1.0
9mA
0.2
0
VCE=10V
Ta=25˚C
IB=10mA
Collector current IC (A)
1.0
Collector current IC (A)
Collector power dissipation PC (W)
Ta=25˚C
1
1
3
10
30
100
Collector to base voltage VCB (V)
0
60
120
180
Ambient temperature Ta (˚C)
2SC3939
Transistor
ICEO — Ta
105
Area of safe operation (ASO)
10
VCE=10V
Single pulse
Ta=25˚C
3
Collector current IC (A)
ICEO (Ta)
ICEO (Ta=25˚C)
104
103
102
1
ICP
t=10ms
IC
0.3
t=1s
DC
0.1
0.03
0.01
10
0.003
1
0
20
40
60
80
100 120 140
Ambient temperature Ta (˚C)
0.001
0.1
0.3
1
3
10
30
100
Collector to emitter voltage VCE (V)
3
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2001 MAR