ETC 2SC1473/2SC1473A

Transistor
2SC1473, 2SC1473A
Silicon NPN triple diffusion planer type
For general amplification
2SC1473 complementary to 2SA1018
2SC1473A complementary to 2SA1767
Unit: mm
■ Features
High collector to emitter voltage VCEO.
High transition frequency fT.
■ Absolute Maximum Ratings
Parameter
(Ta=25˚C)
Symbol
Collector to
2SC1473
base voltage
2SC1473A
Collector to
2SC1473
Ratings
250
VCBO
300
200
VCEO
emitter voltage 2SC1473A
Emitter to base voltage
VEBO
Peak collector current
ICP
300
Unit
V
V
7
V
100
mA
Collector current
IC
70
mA
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
■ Electrical Characteristics
Symbol
2SC1473
current
2SC1473A
Collector to emitter
2SC1473
voltage
2SC1473A
1.27
1.27
1 2 3
2.54±0.15
ICEO
VCEO
Conditions
min
typ
max
VCE = 120V, IB = 0
1
1
IC = 100µA, IC = 0
200
VEBO
IE = 1µA, IC = 0
7
hFE*
VCE = 10V, IC = 5mA
30
Collector to emitter saturation voltage
VCE(sat)
IC = 50mA, IB = 5mA
Transition frequency
fT
VCB = 10V, IE = –10mA, f = 200MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
µA
V
220
1.2
50
Unit
V
300
Forward current transfer ratio
FE
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
VCE = 120V, IB = 0
Emitter to base voltage
*h
+0.2
0.45 –0.1
(Ta=25˚C)
Parameter
Collector cutoff
+0.2
0.45 –0.1
2.3±0.2
●
13.5±0.5
●
4.0±0.2
5.1±0.2
5.0±0.2
80
V
MHz
10
pF
Rank classification
Rank
P
Q
R
hFE
30 ~ 100
60 ~ 150
100 ~ 220
1
Transistor
2SC1473, 2SC1473A
IC — VCE
0.7
0.6
0.5
0.4
0.3
0.2
1.0mA
0.8mA
0.6mA
60
0.4mA
40
0.2mA
20
40
60
80 100 120 140 160
–25˚C
60
40
0
0
2
Collector to emitter saturation voltage VCE(sat) (V)
VCE=10V
Ta=25˚C
100
80
60
40
20
0
0.8
8
10
1.2
1.6
2.0
10
3
1
25˚C
0.3
Ta=75˚C
0.1
–25˚C
0.01
0.1
0
0.3
1
3
10
30
100
0
60
10
30
Collector current IC (mA)
100
0.6
0.8
1.0
Cob — VCB
140
120
100
80
60
40
0
–1
0.4
10
20
3
0.2
Base to emitter voltage VBE (V)
Collector output capacitance Cob (pF)
Transition frequency fT (MHz)
–25˚C
1
1.0
0.5
VCB=10V
Ta=25˚C
25˚C
0.3
1.5
0.03
VCE=10V
120
2.0
2.0
fT — I E
Ta=75˚C
1.6
2.5
160
240
1.2
VCE=10V
Ta=25˚C
30
hFE — IC
300
0.8
3.0
IC/IB=10
Collector current IC (mA)
360
180
0.4
Base to emitter voltage VBE (V)
IB — VBE
100
Base current IB (mA)
0
0.1
0
VCE(sat) — IC
120
0.4
6
Collector to emitter voltage VCE (V)
IC — IB
0
4
Base current IB (mA)
20
Ambient temperature Ta (˚C)
Collector current IC (mA)
Ta=75˚C
80
20
0
0
Forward current transfer ratio hFE
100
1.2mA
80
25˚C
0.1
0
2
VCE=10V
Ta=25˚C
IB=2mA
1.4mA
100
0.8
IC — VBE
120
1.8mA
1.6mA
0.9
Collector current IC (mA)
Collector power dissipation PC (W)
120
Collector current IC (mA)
PC — Ta
1.0
IE=0
f=1MHz
Ta=25˚C
9
8
7
6
5
4
3
2
1
0
–3
–10
–30
Emitter current IE (mA)
–100
1
3
10
30
100
Collector to base voltage VCB (V)
Transistor
2SC1473, 2SC1473A
ICBO — Ta
104
IEBO — Ta
104
VCB=250V
Area of safe operation (ASO)
1000
VEB=5V
Single pulse
Ta=25˚C
10
102
10
t=10ms
IC
30
DC
10
3
1
0.3
1
1
0
40
80
120
160
200
Ambient temperature Ta (˚C)
t=1ms
2SC1473A
102
ICP
100
2SC1473
103
IEBO (Ta)
IEBO (Ta=25˚C)
ICBO (Ta)
ICBO (Ta=25˚C)
103
Collector current IC (mA)
300
0.1
0
40
80
120
160
200
Ambient temperature Ta (˚C)
1
3
10
30
100
300
1000
Collector to emitter voltage VCE (V)
3
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2001 MAR