Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm ■ Features High collector to emitter voltage VCEO. High transition frequency fT. ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Collector to 2SC1473 base voltage 2SC1473A Collector to 2SC1473 Ratings 250 VCBO 300 200 VCEO emitter voltage 2SC1473A Emitter to base voltage VEBO Peak collector current ICP 300 Unit V V 7 V 100 mA Collector current IC 70 mA Collector power dissipation PC 750 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Symbol 2SC1473 current 2SC1473A Collector to emitter 2SC1473 voltage 2SC1473A 1.27 1.27 1 2 3 2.54±0.15 ICEO VCEO Conditions min typ max VCE = 120V, IB = 0 1 1 IC = 100µA, IC = 0 200 VEBO IE = 1µA, IC = 0 7 hFE* VCE = 10V, IC = 5mA 30 Collector to emitter saturation voltage VCE(sat) IC = 50mA, IB = 5mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz µA V 220 1.2 50 Unit V 300 Forward current transfer ratio FE 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A VCE = 120V, IB = 0 Emitter to base voltage *h +0.2 0.45 –0.1 (Ta=25˚C) Parameter Collector cutoff +0.2 0.45 –0.1 2.3±0.2 ● 13.5±0.5 ● 4.0±0.2 5.1±0.2 5.0±0.2 80 V MHz 10 pF Rank classification Rank P Q R hFE 30 ~ 100 60 ~ 150 100 ~ 220 1 Transistor 2SC1473, 2SC1473A IC — VCE 0.7 0.6 0.5 0.4 0.3 0.2 1.0mA 0.8mA 0.6mA 60 0.4mA 40 0.2mA 20 40 60 80 100 120 140 160 –25˚C 60 40 0 0 2 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Ta=25˚C 100 80 60 40 20 0 0.8 8 10 1.2 1.6 2.0 10 3 1 25˚C 0.3 Ta=75˚C 0.1 –25˚C 0.01 0.1 0 0.3 1 3 10 30 100 0 60 10 30 Collector current IC (mA) 100 0.6 0.8 1.0 Cob — VCB 140 120 100 80 60 40 0 –1 0.4 10 20 3 0.2 Base to emitter voltage VBE (V) Collector output capacitance Cob (pF) Transition frequency fT (MHz) –25˚C 1 1.0 0.5 VCB=10V Ta=25˚C 25˚C 0.3 1.5 0.03 VCE=10V 120 2.0 2.0 fT — I E Ta=75˚C 1.6 2.5 160 240 1.2 VCE=10V Ta=25˚C 30 hFE — IC 300 0.8 3.0 IC/IB=10 Collector current IC (mA) 360 180 0.4 Base to emitter voltage VBE (V) IB — VBE 100 Base current IB (mA) 0 0.1 0 VCE(sat) — IC 120 0.4 6 Collector to emitter voltage VCE (V) IC — IB 0 4 Base current IB (mA) 20 Ambient temperature Ta (˚C) Collector current IC (mA) Ta=75˚C 80 20 0 0 Forward current transfer ratio hFE 100 1.2mA 80 25˚C 0.1 0 2 VCE=10V Ta=25˚C IB=2mA 1.4mA 100 0.8 IC — VBE 120 1.8mA 1.6mA 0.9 Collector current IC (mA) Collector power dissipation PC (W) 120 Collector current IC (mA) PC — Ta 1.0 IE=0 f=1MHz Ta=25˚C 9 8 7 6 5 4 3 2 1 0 –3 –10 –30 Emitter current IE (mA) –100 1 3 10 30 100 Collector to base voltage VCB (V) Transistor 2SC1473, 2SC1473A ICBO — Ta 104 IEBO — Ta 104 VCB=250V Area of safe operation (ASO) 1000 VEB=5V Single pulse Ta=25˚C 10 102 10 t=10ms IC 30 DC 10 3 1 0.3 1 1 0 40 80 120 160 200 Ambient temperature Ta (˚C) t=1ms 2SC1473A 102 ICP 100 2SC1473 103 IEBO (Ta) IEBO (Ta=25˚C) ICBO (Ta) ICBO (Ta=25˚C) 103 Collector current IC (mA) 300 0.1 0 40 80 120 160 200 Ambient temperature Ta (˚C) 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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