Transistor 2SB1322A Silicon PNP epitaxial planer type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 ■ Features 0.65 max. Allowing supply with the radial taping. 14.5±0.5 (1.0) ● (0.5) (1.0) (0.2) 4.5±0.1 0.7 2.5±0.1 (0.8) ■ Absolute Maximum Ratings * (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V Peak collector current ICP –1.5 A Collector current IC –1 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 0.45+0.10 –0.05 0.45+0.10 –0.05 1.05±0.05 2.5±0.5 2.5±0.5 1 2 3 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT-2-A1 Package or more, and the board 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit – 0.1 µA Collector cutoff current ICBO VCB = –20V, IE = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –60 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 hFE1*1 VCE = –10V, IC = –500mA*2 85 hFE2 VCE = –5V, IC = –1mA*2 50 VCE(sat) IC = –500mA, IB = –50mA*2 Base to emitter saturation voltage VBE(sat) IC = –500mA, IB = –50mA*2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 200 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 20 Forward current transfer ratio Collector to emitter saturation voltage V 340 – 0.4 –1.2 FE1 Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 254 V MHz 30 *2 *1h V pF Pulse measurement 2SB1322A Transistor PC — Ta IC — VCE 0.8 0.6 IB=–10mA –9mA –8mA –1.0 –7mA –6mA – 0.75 0.4 –5mA –4mA –3mA – 0.5 0.2 –2mA – 0.25 20 40 60 –2 –6 –8 –10 –30 –10 –3 –1 Ta=100˚C 25˚C –25˚C –30 –10 –3 25˚C Ta=–25˚C –1 100˚C – 0.1 – 0.03 – 0.03 –3 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Collector current IC (A) 60 Collector output capacitance Cob (pF) 160 140 120 100 80 60 40 20 0 1 3 10 –1 –3 30 Emitter current IE (mA) 100 20 10 –10 –12 400 350 300 Ta=100˚C 250 200 150 25˚C –25˚C 100 50 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 VCER — RBE 30 –3 –10 Collector current IC (A) 40 0 –1 –8 VCE=–10V –10 IE=0 f=1MHz Ta=25˚C 50 –6 450 Cob — VCB VCB=–10V Ta=25˚C 180 –4 500 Collector current IC (A) fT — IE 200 –2 Base current IB (mA) IC/IB=10 – 0.3 –1 0 hFE — IC –100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) –4 VBE(sat) — IC IC/IB=10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 – 0.2 Collector to emitter voltage VCE (V) VCE(sat) — IC – 0.1 – 0.4 0 0 Ambient temperature Ta (˚C) – 0.3 – 0.6 0 80 100 120 140 160 –100 – 0.8 Forward current transfer ratio hFE 0 –1mA –1.0 Collector current IC (A) –1.25 VCE=–10V TC=25˚C –30 –100 Collector to base voltage VCB (V) –120 Collector to emitter voltage VCER (V) 1.0 –1.2 Ta=25˚C Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 Transition frequency fT (MHz) IC — I B –1.5 Collector current IC (A) Collector power dissipation PC (W) 1.2 IC=–10mA Ta=25˚C –100 –80 –60 –40 –20 0 0.1 0.3 1 3 10 30 100 Base to emitter resistance RBE (kΩ) 255 2SB1322A Transistor ICEO — Ta 104 Area of safe operation (ASO) –10 VCE=–10V Single pulse Ta=25˚C –3 Collector current IC (A) ICP ICEO (Ta) ICEO (Ta=25˚C) 103 –1 IC t=10ms – 0.3 102 t=1s – 0.1 – 0.03 10 – 0.01 – 0.003 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 256 – 0.001 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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