Central CZT2680 NPN HIGH VOLTAGE SWITCHING POWER TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2680 NPN High Voltage Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a SOT-223 Surface Mount Package. Typical applications include drivers and general high voltage switching applications. SOT-223 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 250 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage VEBO 6.0 V IC 1.5 A Peak Collector Current ICM 2.0 A Power Dissipation PD 2.0 W TJ,Tstg -65 to +150 °C ΘJA 62.5 °C/W Collector Current Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO VCB=200V 100 nA BVCBO IC=100µA 250 435 V BVCEO IC=20mA 200 275 V BVEBO IE=100µA 6.0 9.0 V VCE(SAT) IC=100mA, IB=10mA 45 150 mV VCE(SAT) IC=500mA, IB=50mA 95 200 mV VCE(SAT) IC=1.0A, IB=150mA 135 500 mV VBE(SAT) IC=500mA, IB=50mA 0.83 1.10 V VBE(SAT) IC=1.0A, IB=150mA 0.95 1.20 V R0 (10-April 2002) Central TM Semiconductor Corp. CZT2680 NPN HIGH VOLTAGE SWITCHING POWER TRANSISTOR ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CONTINUED SYMBOL TEST CONDITIONS MIN TYP MAX UNITS hFE VCE=5.0V, IC=20mA 40 105 hFE VCE=5.0V, IC=500mA 40 90 hFE VCE=5.0V, IC=1.0A 15 47 fT VCE=20V, IC=100mA, f=1.0MHz 50 80 Cob VCB=10V, IE=0, f=1.0MHz ton IC=500mA, VCC=20V, IB1= IB2=50mA 0.3 µs toff IC=500mA, VCC=20V, IB1= IB2=50mA 1.0 µs MHz 30 pF SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector R0 (10-April 2002)