CZT2680 SURFACE MOUNT HIGH VOLTAGE NPN SILICON SWITCHING POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2680 NPN High Voltage Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a SOT-223 Surface Mount Package. Typical applications include drivers and general high voltage switching applications. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL Collector-Base Voltage 250 V 200 V VEBO IC 6.0 V 1.5 A ICM 2.0 A PD TJ, Tstg 2.0 W -65 to +150 °C ΘJA 62.5 °C/W Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature UNITS VCBO VCEO Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO 100 nA BVCBO VCB=200V IC=100µA 250 435 V BVCEO IC=20mA 200 275 V BVEBO IE=100µA 6.0 9.0 V VCE(SAT) VCE(SAT) IC=100mA, IB=10mA IC=500mA, IB=50mA IC=1.0A, IB=150mA VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob ton toff IC=500mA, IB=50mA IC=1.0A, IB=150mA VCE=5.0V, IC=20mA VCE=5.0V, IC=500mA VCE=5.0V, IC=1.0A VCE=20V, IC=100mA, f=1.0MHz VCB=10V, IE=0, f=1.0MHz IC=500mA, VCC=20V, IC=500mA, VCC=20V, IB1= IB1= 45 150 95 200 mV 135 500 mV 0.83 1.10 V 0.95 1.20 V 40 105 40 90 15 47 50 80 mV MHz 30 pF IB2=50mA 0.3 µs IB2=50mA 1.0 µs R3 (1-March 2010) CZT2680 SURFACE MOUNT HIGH VOLTAGE NPN SILICON SWITCHING POWER TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R3 (1-March 2010) w w w. c e n t r a l s e m i . c o m