CZT7120 SURFACE MOUNT PNP SILICON SWITCHING POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT7120 PNP Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a SOT-223 Surface Mount Package. Typical applications include drivers, DC-DC converters, and general fast switching applications. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature SYMBOL 120 70 V VEBO IC 7.0 V 3.0 A PD TJ, Tstg 2.0 W Thermal Resistance ΘJA ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS MIN ICBO UNITS VCBO VCEO V -65 to +150 °C 62.5 °C/W TYP MAX UNITS 1.0 µA 1.0 µA IEBO VCB=80V VEB=5.0V BVCBO IC=50µA 120 156 V BVCEO IC=10mA 70 118 V BVEBO IE=50µA 7.0 24 V VCE(SAT) IC=2.0A, IB=200mA IC=2.0A, VCE=1.0V VBE(ON) hFE 295 500 mV 0.93 1.1 V 100 210 hFE VCE=5.0V, IC=10mA VCE=5.0V, IC=500mA 100 162 hFE fT VCE=5.0V, IC=3.0A VCE=10V, IC=500mA, f=1.0MHz 40 65 8.0 300 MHz R3 (1-March 2010) CZT7120 SURFACE MOUNT PNP SILICON SWITCHING POWER TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER R3 (1-March 2010) w w w. c e n t r a l s e m i . c o m