DG2034 Vishay Siliconix New Product Single 4:1 Low rON Multiplexers FEATURES D D D D D D Low Voltage Operation (1.8 to 5.5 V) Low On-Resistance - rDS(on): 4 W Off-Isolation and Crosstalk: - 55 dB @ 10 MHz Fast Switch - 25 ns tON Low Charge Injection - QINJ: 4.7 pC Low Power Consumption - 4 mW BENEFITS APPLICATIONS D High Accuracy D High Bandwidth D TTL and Low Voltage Logic Compatibility D Low Power Consumption D Reduced PCB Space D Mixed Signal Routing D Portable and Battery Operated Systems D Low Voltage Data Acquisition D Modems D PCMCIA Cards DESCRIPTION The DG2034 is a low voltage, low rON, high bandwidth single 4 to 1 analog multiplexer designed for high performance switching of analog and video signals. Combining low power; fast switching; low on-resistance, flatness and matching; and small physical size, the DG2034 is ideal for portable and battery applications. Built on Vishay Siliconix’s low voltage CMOS process, the DG2034 has an epitaxial layer which prevents latchup. Break-before-make is guaranteed. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION 12-Pin QFN (3 X 3 mm) A0 NC A1 12 11 10 MSOP-10 Logic S1 S2 9 1 GND 2 8 COM S3 3 7 S4 4 5 6 EN NC V+ 10 A1 2 9 S2 GND 3 8 COM S3 4 7 S4 EN 5 6 V+ A0 1 S1 Logic Top View Top View TRUTH TABLE A1 A0 EN ON Switch X X 0 None 0 0 1 S1 0 1 1 S2 1 0 1 S3 1 1 1 S4 ORDERING INFORMATION Temp Range -40 40 to 85°C Document Number: 72418 S -31808—Rev. A, 01-Sept-03 Package Part Number MSOP-10 DG2034DQ 12-Pin QFN (3 x 3 mm) DG2034DN www.vishay.com 1 DG2034 Vishay Siliconix New Product ABSOLUTE MAXIMUM RATINGS Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V AX, EN, SX, COMa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . #50 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . #100 mA (Pulsed at 1ms, 10% duty cycle) Power Dissipation (Package)b QFN-12 (3 x 3 mm)c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850 mW MSOP-10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320 mW Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C Notes: a. Signals on SX, DX, EN or AX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 4.0 mV/_C above 70_C. SPECIFICATIONS (V+ = 3 V) Test Conditions Otherwise Unless Specified Parameter Limits -40 to 85_C Tempa Minc VANALOG Full 0 rON Room Full 4 7 9 Room 0.1 0.3 Symbol V+ = 3 V, "10%, VAL = 0.4, VAH = 2.0 Ve Typb Maxc Unit V+ V Analog Switch Analog Signal Ranged On-Resistance rON Match rON DrON Flatness d, f Off Leakage Currentg V+ = 2.7 V, VCOM = 0.5 V/1.5 V/2.0 V IS = 10 mA rON Flatness Room 0.3 1.5 IS(off) Room Full -1 -10 0.3 1 10 Room Full -1 -10 0.3 1 10 0.3 1 10 V+ = 3.3 V, VS = 1 V / 3 V VCOM = 3 V / 1 V, VEN = 0 V COM Off Leakage Currentg ICOM(off) Channel-On Leakage Currentg ICOM(on) V+ = 3.3 V VCOM = VS = 1 V / 3 V Room Full -1 -10 IA or IEN VA/EN = 0 or V+, See Truth Table W nA Digital Control Input Currentd Full -1.0 Input High Voltaged VAH or VENH Full 2.0 1.0 Input Low Voltaged VAL or VENL Full Turn-On Time tON Room Full 25 35 45 Turn-Off Time tOFF Room Full 15 25 35 Room 10.5 0.4 mA V Dynamic Characteristics Break-Before-Make Timed VS = 1.5 V, RL = 300 W tD Transition Time ttrans VS = 1.5 V/0 V, VS = 0 V/1.5 V, RL = 300 W Room Full 30 Charge Injectiond QINJ CL = 1 nF, Vgen = 0 V, Rgen = 0 W Off Isolationd Off-Isolation OIRR Channel to Channel Crosstalkd Channel-to-Channel XTALK Off Capacitanced CS(off) COM Off Capacitanced CCOM(off) COM On Capacitanced CCOM(on) RL = 50 W, W CL = 5 pF RL = 50 W, W CL = 5 pF Room -4.7 f = 1 MHz Room -73 f = 10 MHz Room -54 f = 1 MHz Room -77 f = 10 MHz Room -59 Room 14 Room 46 Room 67 V+ = 2.7 V,, f = 1 MHz ns 45 55 pC dB pF p Power Supply Power Supply Range V+ Power Supply Currentd I+ 2.7 V+ = 3.3 V, VA/EN = 0 or 3.3 V, See Truth Table Full 3.3 V 1.0 mA Notes: a. Room = 25°C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, not subjected to production test. e. VA, EN = input voltage to perform proper function. f. Difference of min and max values. g. Guaranteed by 5 V testing. www.vishay.com 2 Document Number: 72418 S -31808—Rev. A, 01-Sept-03 DG2034 Vishay Siliconix New Product SPECIFICATIONS (V+ = 5 V) Limits Test Conditions Otherwise Unless Specified Parameter V+ = 5 V, "10%, VAL = 0.8 or VAH = 2.4 Ve -40 to 85_C Typb Maxc Uni t V+ V Room Full 3 5.5 7 Room 0.16 0.5 Tempa Minc VANALOG Full 0 rON Symbol Analog Switch Analog Signal Ranged On-Resistance rON Match rON Flatness d, f Off Leakage Current DrON V+ = 4.5 V, VCOM = 1.5 V/2.5 V/3.5 V IS = 10 mA rON Flatness Room 0.6 1.5 IS(off) Room Full -1 -10 0.5 1 10 Room Full -1 -10 0.5 1 10 0.5 1 10 V+ = 5.5 V, VS = 1 V / 4.5 V VCOM = 4.5 V / 1 V, VEN = 0 V COM Off Leakage Current ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 5.5 V, VCOM = VS = 1 V / 4.5 V Room Full -1 -10 IAH or IENH VA or VEN = 0 or V+, See Truth Table W nA Digital Control Input Currentd Full -1.0 Input High Voltaged VAH or VENH Full 2.4 1.0 Input Low Voltaged VAL or VENL Full Turn-On Time tON Room Full 18 30 40 Turn-Off Time tOFF Room Full 12 20 30 Room 10.5 Room Full 25 0.8 mA V Dynamic Characteristics Break-Before-Make Timed VS = 3.0 V, RL = 300 W tD Transition Time ttrans Off-Isolation Off Isolationd OIRR RL = 50 W, W CL = 5 pF Channel to Channel Crosstalkd Channel-to-Channel XTALK RL = 50 W, W CL = 5 pF Charge Injectiond QINJ Off Capacitanced CS(off) COM Off Capacitanced CCOM(off) COM On Capacitanced CCOM(on) VS = 3 V/0 V, VS = 0 V/3 V, RL = 300 W f = 1 MHz Room -73 f = 10 MHz Room -53.5 f = 1 MHz Room -77 f = 10 MHz Room -60.2 Room -4.4 Room 13 Room 43 Room 64 CL = 1 nF, Vgen = 0 V, Rgen = 0 W V+ = 5.0 V, f = 1 MHz ns 40 50 dB pC pF p Power Supply Power Supply Range V+ Power Supply Current I+ 4.5 V+ = 5.5 V, VA/EN = 0 or 5.5 V, See Truth Table Full 5.5 V 1.0 mA Notes: a. Room = 25°C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, not subjected to production test. e. VA, EN = input voltage to perform proper function. f. Difference of min and max values. Document Number: 72418 S -31808—Rev. A, 01-Sept-03 www.vishay.com 3 DG2034 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rON vs. VCOM and Supply Voltage 12 rON vs. Analog Voltage and Temperature 5.0 4.5 8 rON - On-Resistance (W) rON - On-Resistance (W) 10 V+ = 1.8 V V+ = 2.7 V 6 V+ = 3.3 V 4 V+ = 5.5 V V+ = 2.7 V 4.0 C 3.5 A 2.5 A 1.5 A = 85_C B = 25_C C = -40_C 0.5 0 0 1 2 3 4 5 0.0 0.0 6 0.5 1.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Supply Current vs. Input Switching Frequency Supply Current vs. Temperature 10 m 1m I+ - Supply Current (A) V+ = 5.5 V I+ - Supply Current (pA) 1.5 VCOM - Analog Voltage (V) VCOM - Analog Voltage (V) 10000 B 2.0 1.0 2 V+ = 4.5 V C B 3.0 1000 V+ = 5.5 V 100 m 10 m 1m 100 n 10 n 1n 10 100 -75 -50 -25 0 25 50 75 100 125 Leakage Current vs. Temperature 400 V+ = 5.5 V VCOM = 4.5 V VS = 1.0 V 200 IS( off ) 100 10 -25 0 25 50 Temperature (_C) www.vishay.com 4 1M 10 M Leakage vs. Analog Voltage V+ = 5.5 V -200 -400 ICOM(on) IS(off) -600 -800 ICOM(off) -1200 ICOM( off ) -50 100 K -1000 ICOM( on ) 1 -75 10 K 0 Leakage Current (pA) Leakage Current (pA) 1000 1K Input Switching Frequency (Hz) Temperature (_C) 10000 100 75 100 125 -1400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VS - Analog Voltage (V) Document Number: 72418 S -31808—Rev. A, 01-Sept-03 DG2034 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Switching Time vs. Temperature Insertion Loss, Off -Isolation Crosstalk vs. Frequency 20 30 Loss, OIRR, X TALK (dB) t ON , t OFF - Switching Time (ns) Loss 0 25 tON V+ = 3.3 V 20 tON V+ = 5.5 V 15 tOFF V+ = 3.3 V 10 tOFF V+ = 5.5 V 5 -20 -40 OIRR -60 XTALK -80 V+ = 3.3 V RL = 50 W -100 0 -80 -60 -40 -20 -120 0 20 40 60 80 100 120 140 10 k 100 k 1M Switching Threshold vs. Supply Voltage 2.2 100 M 1G Charge Injection vs. Analog Voltage 3 Q - Charge Injection (pC) 2 VT - Switching Threshold (V) 10 M Frequency (Hz) Temperature (_C) 1.8 1.4 1.0 V+ = 5.5 V 1 0 -1 -2 V+ = 3.3 V -3 V+ = 1.8 V -4 0.6 CL = 1 nF -5 0.2 1 2 3 4 5 -6 6 0 1 V+ - Supply Voltage (V) 35 2 3 4 5 6 VCOM - Analog Voltage (V) Transistion Time vs. Temperature RL = 300 W 30 tTRANS- , V+ = 3.0 V tTRANS+, V+ = 3.3 V 25 tTRANS- , V+ = 5.5 V 20 15 tTRANS+, V+ = 5.5 V 10 -80 -60 -40 -20 0 20 40 60 80 100 120 140 Temperature (_C) Document Number: 72418 S -31808—Rev. A, 01-Sept-03 www.vishay.com 5 DG2034 Vishay Siliconix New Product TEST CIRCUITS V+ Switch Input VIN Logic Input COM tOFF VOUT IN RL 300 W GND VOUT CL 35 pF Note: RL 0.9 x VOUT 90% 0V Switch Output CL (includes fixture and stray capacitance) VOUT = VIN tr <5 ns tf <5 ns 50% VINL Switch Output V+ NO or NC VINH tON Logic input waveform is inverted for switches that have the opposite logic sense control RL + rON Figure 2. Switching Time V+ V+ VNO VNC COM NO VINH Logic Input tr <5 ns tf <5 ns VINL VO NC RL 300 W IN CL 35 pF VNC = VNO VO GND Switch Output 90% 0V tD tD CL (includes fixture and stray capacitance) Figure 3. Break-Before-Make +15 V V+ VS1 VS2 NO or NC COM VO Logic VINH Input VINL NC or NO RL 300 W IN tr <5 ns tf <5 ns 50% tTRANS+ CL 35 pF tTRANS- VS1 V01 GND 90% Switch Output CL (includes fixture and stray capacitance) VO = VS RL VS2 V02 10% RL + rON Figure 4. Transition Time www.vishay.com 6 Document Number: 72418 S -31808—Rev. A, 01-Sept-03 DG2034 Vishay Siliconix New Product TEST CIRCUITS DVO V+ VO V+ Rg COM NO or NC IN Vg IN VO OFF ON CL 1 nF OFF Q = DVO x CL GND IN dependent on switch configuration Input polarity determined by sense of switch. VIN = 0 - V+ Figure 5. Charge Injection V+ C V+ VS VIN NO or NC COM Rg = 50 W 50 W IN 0 V or 2.4 V NC or NO VOUT GND XTALK Isolation = 20 log VOUT C = RF bypass VIN Figure 6. Crosstalk V+ V+ C C V+ NO or NC COM COM Rg = 50 W 0V, 2.4 V Meter RL 50 W IN IN 0 V, 2.4 V GND NO or NC GND Off Isolation = 20 log C = RF Bypass Figure 7. Off Isolation Document Number: 72418 S -31808—Rev. A, 01-Sept-03 HP4192A Impedance Analyzer or Equivalent f = 1 MHz VCOM VNO/NC Figure 8. Source/Drain Capacitances www.vishay.com 7