NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FXTA42 ISSUE 1 SEPT 93 FEATURES * 300 Volt VCEO APPLICATIONS * Telephone dialler circuits B C REFER TO MPSA42 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 6 V Continuous Collector Current IC 500 mA Power Dissipation at Tamb=25°C Ptot 680 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. 300 V IC=100µ A, IE=0 V(BR)CEO 300 V IC=1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=100µ A, IC=0 Collector Cut-Off Current ICBO 0.1 µA VCB=200V, IE=0 Emitter Cut-Off Current IEBO 0.1 µA VEB=6V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=20mA, IB=2mA Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=20mA, IB=2mA Static Forward Current hFE Transfer Ratio 25 40 40 Transition Frequency fT 50 Output Capacitance Cobo TYP. MAX. IC=1mA, VCE=10V* IC=10mA, VCE=10V* IC=30mA, VCE=10V* 6 3-64 MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz