PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR FXT757 ISSUE 1 FEB 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX757 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -1 A Continuous Collector Current IC Power Dissipation at Tamb = 25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). W -55 to +200 °C SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -300 V IC=-100µ A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -300 V IC=-10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µ A, IC=0 Collector Cut-Off Current ICBO -100 nA VCB=-200V, IE=0 Emitter Cut-Off Current IEBO -100 nA VEB=-3V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) -0.5 V IC=-100mA, IB=-10mA* Base-Emitter Saturation Voltage VBE(sat) -1.0 V IC=-100mA, IB=-10mA* Base-Emitter Turn-On Voltage VBE(on) -1.0 V IC=-100mA, VCE=-5V* 40 50 Transition Frequency fT 30 Output Capacitance Cobo MAX. A 1 PARAMETER Static Forward Current hFE Transfer Ratio TYP. -0.5 IC=-10mA, VCE=-5V* IC=-100mA, VCE=-5V* 20 MHz IC=-10mA, VCE=-20V f=20MHz pF VCB=-20V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-60