ETC HSMS-282L/M/N/P/R

Surface Mount RF Schottky
Diodes in SOT-363 (SC-70, 6 Lead)
Technical Data
HSMS-280L / M / N / P/ R
HSMS-281L
HSMS-282L / M / N / P/ R
Features
• Surface Mount SOT-363
Package
• Low Turn-On Voltage
(As Low as 0.34 V at 1 mA)
• Low FIT (Failure in Time)
Rate*
• Six-sigma Quality Level
• Single and Dual Versions
• Tape and Reel Options
Available
* For more information see the
Surface Mount Schottky
Reliability Data Sheet.
Package Lead Code
Identification
(Top View)
Description/Applications
COMMON
UNCONNECTED
CATHODE QUAD
TRIO
6
5
1
2
4
6
5
3
1
2
4
3
L
M
COMMON
ANODE QUAD
BRIDGE
QUAD
6
5
1
2
6
N
4
6
5
3
1
2
4
P
3
Pin Connections and
Package Marking
RING
QUAD
5
These Schottky diodes are specifically designed for analog and
digital applications requiring
devices in SOT-363 surface mount
packages. This series offers a
wide range of specifications and
package configurations to give the
designer wide flexibility. Typical
applications of these Schottky
diodes are mixing, detecting,
switching, sampling, clamping,
and wave shaping.
4
2
R
3
2
Absolute Maximum Ratings, TC= 25ºC
Symbol Parameter
If
PIV
TJ
TSTG
θ jc
3
Unit Absolute Maximum
Forward Current (1µs Pulse) Amp
Peak Inverse Voltage
V
Junction Temperature
°C
Storage Temperature
°C
Thermal Resistance [2]
°C/W
1
Same as VBR
150
-65 to 150
140
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to the device.
2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board.
GU
1
1
6
5
4
[1]
Notes:
1. Package marking provides
orientation and identification.
2. See “Electrical Specifications”
for appropriate package
marking.
2
Electrical Specifications, TC = +25°C, Single Diode [1]
Minimum Maximum Maximum Maximum
Typical
Breakdown Forward Forward Reverse Maximum
Dynamic
Voltage
Voltage
Voltage Leakage Capacitance Resistance
VBR (V)
VF (mV) VF (V) @ IR (nA) @
CT (pF)
RD (Ω)
IF (mA)
VR (V)
Part
Package
Number Marking Lead
HSMS- Code[2] Code Configuration
280L
AL
280M
H
280N
N
280P
AP
280R
O
281L
BL
282L
CL
282M
HH
282N
NN
282P
CP
282R
OO
Test Conditions
L
M
N
P
R
L
L
M
N
P
R
Unconnected Trio
Common Cathode Quad
Common Anode Quad
Bridge Quad
Ring Quad
Unconnected Trio
Unconnected Trio
Common Cathode Quad
Common Anode Quad
Bridge Quad
Ring Quad
70
400
1.0 15
200 50
2.0
35
20
15
400
340
1.0 35
0.7 30
200 15
100 1
1.2
1.0
15
12
VF = 0 V
IF = 5 mA
IR = 10 µA IF = 1 mA[3]
f = 1 MHz [4]
Notes:
1. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at
5 mA, except HSMS-282X which is measured at 20 mA.
2. Package marking code is laser marked.
3. ∆VF for diodes in trios and quads is 15.0 mV maximum at 1.0 mA.
4. ∆CTO for diodes in trios and quads is 0.2 pF maximum.
Typical Performance, TC = 25°C (unless otherwise noted), Single Diode
10
1
TA = +125°C
TA = +75°C
TA = +25°C
TA = –25°C
0.1
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF – FORWARD VOLTAGE (V)
Figure 1. Forward Current vs.
Forward Voltage at Temperatures—
HSMS-280A Series.
100
10
1
TA = +125°C
TA = +75°C
TA = +25°C
TA = –25°C
0.1
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF – FORWARD VOLTAGE (V)
Figure 2. Forward Current vs.
Forward Voltage at Temperatures—
HSMS-281L.
I F – FORWARD CURRENT (mA)
100
I F – FORWARD CURRENT (mA)
I F – FORWARD CURRENT (mA)
100
TA = +125°C
TA = +75°C
TA = +25°C
TA = –25°C
10
1
0.1
0.01
0
0.10
0.20
0.30
0.40
0.50
VF – FORWARD VOLTAGE (V)
Figure 3. Forward Current vs.
Forward Voltage at Temperatures—
HSMS-282A Series.
3
Typical Performance, TC = 25°C (unless otherwise noted), Single Diode, continued
10,000
10,000
10,000
1000
100
TA = +125°C
TA = +75°C
TA = +25°C
10
1
0
10
20
30
40
1000
100
TA = +125°C
TA = +75°C
TA = +25°C
10
1
50
0
VR – REVERSE VOLTAGE (V)
10
10
HSMS-2800 SERIES
HSMS-2810 SERIES
HSMS-2820 SERIES
10
0.8
0.6
0.4
0.2
0
4
6
1
0.5
8
VR – REVERSE VOLTAGE (V)
Figure 10. Total Capacitance vs.
Reverse Voltage—HSMS-282A Series.
10
15
Figure 6. Reverse Current vs.
Reverse Voltage at Temperatures—
HSMS-282A Series.
1
0.75
0.50
0.25
0
0
10
20
30
40
50
Figure 8. Total Capacitance vs.
Reverse Voltage—HSMS-280A Series.
1
2
1.5
VR – REVERSE VOLTAGE (V)
Figure 7. Dynamic Resistance vs.
Forward Current.
5
1.25
0
100
I F – FORWARD CURRENT (mA)
0
1
VR – REVERSE VOLTAGE (V)
C T – CAPACITANCE (pF)
C T – CAPACITANCE (pF)
100
1
TA = +125°C
TA = +75°C
TA = +25°C
10
0
2
1
0.1
100
15
Figure 5. Reverse Current vs.
Reverse Voltage at Temperatures—
HSMS-281L.
1000
RD – DYNAMIC RESISTANCE (Ω)
5
1000
VR – REVERSE VOLTAGE (V)
Figure 4. Reverse Current vs.
Reverse Voltage at Temperatures—
HSMS-280A Series.
C T – CAPACITANCE (pF)
I R – REVERSE CURRENT (nA)
100,000
I R – REVERSE CURRENT (nA)
100,000
I R – REVERSE CURRENT (nA)
100,000
0
2
4
6
8
10
12
14
VR – REVERSE VOLTAGE (V)
Figure 9. Total Capacitance vs.
Reverse Voltage—HSMS-281L.
16
4
Applications Information
Introduction —
Product Selection
Hewlett-Packard’s family of sixlead Schottky products provides
unique solutions to many design
problems.
The first step in choosing the right
product is to select the diode type.
All of the products in the
HSMS-282A family use the same
diode chip, and the same is true of
the HSMS-281A and HSMS-280A
families. Each family has a
different set of characteristics
which can be compared most
easily by consulting the SPICE
parameters in Table 1.
A review of these data shows that
the HSMS-280A family has the
highest breakdown voltage, but at
the expense of a high value of
series resistance (Rs). In applications which do not require high
voltage the HSMS-282A family,
with a lower value of series
resistance, will offer higher
current carrying capacity and
better performance. The HSMS281A family is a hybrid Schottky
(as is the HSMS-280A), offering
lower 1/f or flicker noise than the
HSMS-282A family.
In general, the HSMS-282A family
should be the designer’s first
choice, with the -280A family
reserved for high voltage applications and the HSMS-281A family
for low flicker noise applications.
Six Lead Applications
The HSMS-28xL is an unconnected trio of Schottky diodes. It
can be used as a fast SP3T switch,
as shown in Figure 11.
1
2
3
4
Figure 13. Clamping Four Lines.
Figure 11. SP3T Switch.
The unconnected trio can also be
used to clamp three data lines, as
shown in Figure 12. Note that
either polarity of clamping can be
provided.
Similarly, the HSMS-28xN common anode quad can be used to
clamp four data lines against
negative noise spikes, as shown in
Figure 14.
1
2
3
4
Figure 14. Clamping Four Lines.
Figure 12. Clamping Three Lines.
Table 1. SPICE Parameters.
Parameter
Units
HSMS-280A
HSMS-281A
HSMS-282A
BV
CJ0
EG
IBV
IS
N
RS
PB (VJ)
PT (XTI)
M
V
pF
eV
A
A
75
1.6
.69
10E-5
3 x 10E-8
1.08
30
0.65
2
0.5
25
1.1
.69
10E-5
4.8 x 10E-9
1.08
10
0.65
2
0.5
15
0.7
.69
10E-4
2.2 x10E-8
1.08
6.0
0.65
2
0.5
Ω
V
The HSMS-28xM six lead product
is designed to clamp four data
lines to ground, protecting against
positive noise spikes, as shown in
Figure 13.
The HSMS-28xP is open bridge
quad is designed for sampling
circuits, as shown in Figure 15.
Note that the bridge is closed at
opposite ends by external connections (a trace on the circuit
board).
sample
point
sampling
pulse
Figure 15. Sampling Circuit.
5
The differential detector is often
used to provide temperature
compensation for a Schottky
detector, as shown in Figure 16.
bias
matching
network
differential
amplifier
The HSMS-28xR is an open ring
quad, useful in double balanced
mixers as shown in Figure 18. As
was the case with the bridge
product, the quad is closed using
external connections.
LO in
RF in
IF out
Figure 16. Voltage Doubler.
Figure 18. Double Balanced Mixer.
These circuits depend upon the
use of two diodes having matched
Vf characteristics over all
operating temperatures. This is
best achieved by using two diodes
in a single package, such as the
HSMS-2825 in the SOT-143
package. However, such circuits
generally use single diode
detectors, either series or shunt
mounted diode. The voltage
doubler (HP Application Note
956-4) offers the advantage of
twice the output voltage for a
given input power. The two
concepts can be combined into
the differential voltage doubler, as
shown in Figure 17.
The advantage of an open ring
quad can be seen in Figure 19,
where two HSMS-28xR products
are used to make an eight diode
double balanced mixer having
very low distortion.
bias
differential
amplifier
matching
network
Figure 17. Differential Voltage
Doubler.
Here, all four diodes are matched
in their Vf characteristics, because
they came from adjacent sites on
the wafer.
LO in
RF in
IF out
Figure 19. Low Distortion Mixer.
Other configurations of six lead
Schottky products can be used to
solve circuit design problems
while saving space and cost.
Thermal Considerations
The obvious advantage of the
SOT-363 over the SOT-143 is
combination of smaller size and
two extra leads. However, the
copper leadframe in the SOT-363
has a thermal conductivity four
times higher than the Alloy 42
leadframe of the SOT-143, which
enables it to dissipate more
power.
The maximum junction temperature for these three families of
Schottky diodes is 150°C under all
operating conditions. The follow-
ing equation, equation (1), applies
to the thermal analysis of diodes:
T j = (V f I f + PRF) θ jc + Ta
where
Tj = junction temperature
Ta = diode case temperature
θjc = thermal resistance
VfIf = DC power dissipated
PRF = RF power dissipated
Equation (1).
Note that θjc, the thermal resistance from diode junction to the
foot of the leads, is the sum of two
component resistances,
θjc = θpkg + θchip
Equation (2).
Package thermal resistance for
the SOT-363 package is approximately 100°C/W, and the chip
thermal resistance for these three
families of diodes is approximately 40°C/W. The designer will
have to add in the thermal
resistance from diode case to
ambient — a poor choice of circuit
board material or heat sink design
can make this number very high.
Equation (1) would be straightforward to solve but for the fact that
diode forward voltage is a function of temperature as well as
forward current. The equation,
equation (3), for Vf is:
If = IS
11600 (Vf – If Rs)
nT
e
–1
where
n = ideality factor
T = temperature in °K
Rs = diode series resistance
Equation (3).
6
and IS (diode saturation current)
is given by
2
n
Is = I 0
T
)
( 298
– 4060
e
1
( 1T – 298
)
Equation (4).
Equations (1) and (3) are solved
simultaneously to obtain the value
of junction temperature for given
values of diode case temperature,
DC power dissipation and RF
power dissipation.
Assembly Instructions
SOT-363 PCB Footprint
A recommended PCB pad layout
for the miniature SOT-363 (SC-70,
6 lead) package is shown in
Figure 20 (dimensions are in
inches). This layout provides
ample allowance for package
placement by automated assembly
equipment without adding
parasitics that could impair the
performance.
0.026
SMT Assembly
Reliable assembly of surface
mount components is a complex
process that involves many
material, process, and equipment
factors, including: method of
heating (e.g., IR or vapor phase
reflow, wave soldering, etc.)
circuit board material, conductor
thickness and pattern, type of
solder alloy, and the thermal
conductivity and thermal mass of
components. Components with a
low mass, such as the SOT-363
package, will reach solder reflow
temperatures faster than those
with a greater mass.
HP’s SOT-363 diodes have been
qualified to the time-temperature
profile shown in Figure 21. This
profile is representative of an IR
reflow type of surface mount
assembly process.
passes through one or more
preheat zones. The preheat zones
increase the temperature of the
board and components to prevent
thermal shock and begin evaporating solvents from the solder paste.
The reflow zone briefly elevates
the temperature sufficiently to
produce a reflow of the solder.
The rates of change of temperature for the ramp-up and cooldown zones are chosen to be low
enough to not cause deformation
of the board or damage to components due to thermal shock. The
maximum temperature in the
reflow zone (TMAX) should not
exceed 235 °C.
These parameters are typical for a
surface mount assembly process
for HP SOT-363 diodes. As a
general guideline, the circuit
board and components should be
exposed only to the minimum
temperatures and times necessary
to achieve a uniform reflow of
solder.
After ramping up from room
temperature, the circuit board
with components attached to it
(held in place with solder paste)
250
TMAX
0.075
0.016
Figure 20. PCB Pad Layout
(dimensions in inches).
TEMPERATURE (°C)
0.035
200
150
Reflow
Zone
100
Preheat
Zone
Cool Down
Zone
50
0
0
60
120
180
TIME (seconds)
Figure 21. Surface Mount Assembly Profile.
240
300
7
Package Dimensions
Outline SOT-363 (SC-70 6 Lead)
1.30 (0.051)
REF.
2.20 (0.087)
2.00 (0.079)
PACKAGE MARKING CODE
1.35 (0.053)
1.15 (0.045)
XX
0.650 BSC (0.025)
0.425 (0.017)
TYP.
2.20 (0.087)
1.80 (0.071)
0.10 (0.004)
0.00 (0.00)
0.30 REF.
1.00 (0.039)
0.80 (0.031)
0.25 (0.010)
0.15 (0.006)
10°
0.30 (0.012)
0.10 (0.004)
0.20 (0.008)
0.10 (0.004)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
Part Number Ordering Information
Part Number
HSMS-28XA-TR1*
HSMS-28XA-BLK*
HSMS-281L-TR1
HSMS-281L-BLK
No. of Devices
3000
100
3000
100
* where X = 0 or 2; A = L, M, N, P or R
Container
7" Reel
antistatic bag
7" Reel
antistatic bag
Device Orientation
REEL
TOP VIEW
END VIEW
4 mm
8 mm
CARRIER
TAPE
USER
FEED
DIRECTION
##
##
##
##
Note: “##” represents Package Marking Code.
Package marking is right side up with carrier tape
perforations at top. Conforms to Electronic Industries
RS-481, “Taping of Surface Mounted Components for
Automated Placement.” Standard Quantity is
3,000 Devices per Reel.
COVER TAPE
Tape Dimensions and Product Orientation
For Outline SOT-363 (SC-70, 6 Lead)
P
P2
D
P0
E
F
W
C
D1
t1 (CARRIER TAPE THICKNESS)
Tt (COVER TAPE THICKNESS)
K0
8° MAX.
A0
DESCRIPTION
B0
SYMBOL
SIZE (mm)
SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
DIAMETER
PITCH
POSITION
D
P0
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t1
8.00 ± 0.30
0.255 ± 0.013
0.315 ± 0.012
0.010 ± 0.0005
COVER TAPE
WIDTH
TAPE THICKNESS
C
Tt
5.4 ± 0.10
0.062 ± 0.001
0.205 ± 0.004
0.0025 ± 0.00004
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
CAVITY
PERFORATION
5° MAX.
For technical assistance or the location of
your nearest Hewlett-Packard sales office,
distributor or representative call:
Americas/Canada: 1-800-235-0312 or
408-654-8675
Far East/Australasia: Call your local HP
sales office.
Japan: (81 3) 3335-8152
Europe: Call your local HP sales office.
Data subject to change.
Copyright © 1997 Hewlett-Packard Co.
Printed in U.S.A.
5966-2049E (10/97)