ETC HBAT-540C

High Performance Schottky
Diode for Transient Suppression
Technical Data
HBAT-5400/-5402
HBAT-540B/-540C
Features
• Ultra-low Series Resistance
for Higher Current Handling
Package Lead Code
Identification
(Top View)
• Low Capacitance
SINGLE
3
• Low Series Resistance
Description
SERIES
3
Applications
RF and computer designs that
require circuit protection, highspeed switching, and voltage
clamping.
1
0, B 2
1
2, C
2
The HBAT-5400 series of Schottky
diodes, commonly referred to as
clipping /clamping diodes, are
optimal for circuit and waveshape
preservation applications with
high speed switching. Low series
resistance, R S, makes them ideal
for protecting sensitive circuit
elements against high current
transients carried on data lines.
With picosecond switching, the
HBAT-540x can respond to noise
spikes with rise times as fast as
1 ns. Low capacitance minimizes
waveshape loss that causes signal
degradation.
HBAT-540x DC Electrical Specifications, TA = +25°C[1]
Part
Package
Number Marking Lead
HBAT- Code [2] Code Configuration
-5400
0
V0
-540B
2
V2
-540C
SOT-23
Single
B
-5402
SOT-323
(3-lead SC-70)
800 [3]
30 [4]
3.0 [5]
2.4
100 [6]
SOT-23
Series
C
Package
Maximum Minimum
Typical
Maximum
Forward Breakdown
Typical
Series
Eff. Carrier
Voltage
Voltage Capacitance Resistance Lifetime
VF (mV)
VBR (V)
C T (pF)
R S (Ω)
τ (ps)
SOT-323
(3-lead SC-70)
Notes:
1. TA = +25°C, where TA is defined to be the temperature at the package pins where contact is made to the circuit board.
2. Package marking code is laser marked.
3. IF = 100 mA; 100% tested
4. IF = 100 µA; 100% tested
5. VF = 0; f =1 MHz
6. Measured with Karkauer method at 20 mA guaranteed by design.
2
Absolute Maximum Ratings, TA= 25ºC
Symbol
IF
I F- peak
PT
PINV
TJ
TSTG
θ JC
Parameter
DC Forward Current
Peak Surge Current (1µs pulse)
Total Power Dissipation
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance, junction to lead
Unit
mA
A
mW
V
°C
°C
°C/W
Absolute Maximum [1]
HBAT-5400/-5402
HBAT-540B/-540C
220
1.0
250
30
150
-65 to 150
500
430
1.0
825
30
150
-65 to 150
150
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
Linear and Non-linear SPICE Model[2]
0.08 pF
2 nH
RS
SPICE model
Note:
2. To effectively model the packaged HBAT-540x
product, please refer to Application Note AN1124.
SPICE Parameters
Parameter
BV
CJO
EG
IBV
IS
N
RS
PB
PT
M
Unit
V
pF
eV
A
A
Ω
V
Value
40
3.0
0.55
10E-4
1.0E-7
1.0
2.4
0.6
2
0.5
3
Typical Performance
10
1
0.1
TA = +75°C
TA = +25°C
TA = –25°C
0.01
0
0.1
0.2
0.3
0.4
0.5
TJ – JUNCTION TEMPERATURE (°C)
500
100
I F – FORWARD CURRENT (mA)
I F – FORWARD CURRENT (mA)
300
100
10
1
0.1
TA = +75°C
TA = +25°C
TA = –25°C
0.01
0.6
0
VF – FORWARD VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IF – FORWARD CURRENT (mA)
Figure 1. Forward Current vs.
Forward Voltage at Temperature for
HBAT-5400 and HBAT-5402.
160 Max. safe junction temp.
140
120
100
80
60
40
TA = +75°C
TA = +25°C
TA = –25°C
20
0
0
50
100
150
Figure 2. Forward Current vs.
Forward Voltage at Temperature for
HBAT-540B and HBAT-540C.
CT – TOTAL CAPACITANCE (pF)
Tj – JUNCTION TEMPERATURE (°C)
3.0
140
120
100
80
60
40
TA = +75°C
TA = +25°C
TA = –25°C
20
0
0
100
200
300
400
500
IF – FORWARD CURRENT (mA)
Figure 4. Junction Temperature vs.
Current as a Function of Heat Sink
Temperature for HBAT-540B and
HBAT-540C.
Note: Data is calculated from SPICE
parameters.
2.5
2.0
1.5
1.0
600
0
5
10
15
VR – REVERSE VOLTAGE (V)
Figure 5. Total Capacitance vs.
Reverse Voltage.
250
Figure 3. Junction Temperature vs.
Current as a Function of Heat Sink
Temperature for HBAT-5400 and
HBAT-5402. Note: Data is calculated
from SPICE parameters.
160 Max. safe junction temp.
200
IF – FORWARD CURRENT (mA)
20
4
Package Dimensions
Outline SOT-23
1.02 (0.040)
0.89 (0.035)
0.54 (0.021)
0.37 (0.015)
PACKAGE
MARKING
CODE (XX)
DATE CODE (X)
3
1.40 (0.055)
1.20 (0.047)
XXX
2
1
0.50 (0.024)
0.45 (0.018)
2.65 (0.104)
2.10 (0.083)
2.04 (0.080)
1.78 (0.070)
TOP VIEW
0.152 (0.006)
0.066 (0.003)
3.06 (0.120)
2.80 (0.110)
1.02 (0.041)
0.85 (0.033)
0.69 (0.027)
0.45 (0.018)
0.10 (0.004)
0.013 (0.0005)
SIDE VIEW
END VIEW
DIMENSIONS ARE IN MILLIMETERS (INCHES)
Tape Dimensions and Product Orientation
For Outline SOT-23
D0
P0
COVER
TAPE
t
P2
10 PITCHES CUMULATIVE
TOLERANCE ON TAPE
±0.2 MM (±0.008)
EMBOSSMENT
E
A
K C
F
USER FEED
DIRECTION
B
P1
T
W
D1
CENTER LINES
OF CAVITY
DESCRIPTION
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
B
K
P1
D1
3.15 ± 0.15
2.65 ± 0.25
1.30 ± 0.10
4.00 ± 0.10
1.00 min.
0.124 ± 0.006
0.104 ± 0.010
0.051 ± 0.004
0.157 ± 0.004
0.04 min.
PERFORATION
DIAMETER
PITCH
POSITION
D0
P0
E
1.55 + 0.10/-0
4.00 ± 0.10
1.75 ± 0.10
0.061 + 0.004/-0
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t
8.00 ± 0.2
0.30 ± 0.05
0.315 ± 0.008
0.012 ± 0.002
COVER TAPE
WIDTH
TAPE THICKNESS
C
T
5.40 ± 0.25
0.064 ± 0.01
0.205 ± 0.010
0.003 ± 0.0004
DISTANCE
BETWEEN
CENTERLINE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.10
0.138 ± 0.004
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
5
Package Dimensions
Outline SOT-323 (SC-70 3 Lead)
PACKAGE
MARKING
CODE (XX)
1.30 (0.051)
REF.
2.20 (0.087)
2.00 (0.079)
XXX
DATE CODE (X)
1.35 (0.053)
1.15 (0.045)
0.650 BSC (0.025)
0.425 (0.017)
TYP.
2.20 (0.087)
1.80 (0.071)
0.10 (0.004)
0.00 (0.00)
0.30 REF.
1.00 (0.039)
0.80 (0.031)
0.25 (0.010)
0.15 (0.006)
10°
0.20 (0.008)
0.10 (0.004)
0.30 (0.012)
0.10 (0.004)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
Tape Dimensions and Product Orientation
For Outline SOT-323 (SC-70 3 Lead)
P
P2
D
P0
E
F
W
C
D1
t1 (CARRIER TAPE THICKNESS)
Tt (COVER TAPE THICKNESS)
K0
8° MAX.
A0
DESCRIPTION
5° MAX.
B0
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
PERFORATION
DIAMETER
PITCH
POSITION
D
P0
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t1
8.00 ± 0.30
0.255 ± 0.013
0.315 ± 0.012
0.010 ± 0.0005
COVER TAPE
WIDTH
TAPE THICKNESS
C
Tt
5.4 ± 0.10
0.062 ± 0.001
0.205 ± 0.004
0.0025 ± 0.00004
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
6
Applications Information
Schottky Diode Fundamentals
The HBAT-540x series of clipping/
clamping diodes are Schottky
devices. A Schottky device is a
rectifying, metal-semiconductor
contact formed between a metal
and an n-doped or a p-doped
semiconductor. When a metalsemiconductor junction is formed,
free electrons flow across the
junction from the semiconductor
and fill the free-energy states in
the metal. This flow of electrons
creates a depletion or potential
across the junction. The difference in energy levels between
semiconductor and metal is called
a Schottky barrier.
P-doped, Schottky-barrier diodes
excel at applications requiring
ultra low turn-on voltage (such as
zero-biased RF detectors). But
their very low, breakdown-voltage
and high series-resistance make
them unsuitable for the clipping
and clamping applications involving high forward currents and high
reverse voltages. Therefore, this
discussion will focus entirely on
n-doped Schottky diodes.
cross the junction. The reverse
leakage current will be in the
nanoampere to microampere
range, depending upon the diode
type, the reverse voltage, and the
temperature.
In contrast to a conventional p-n
junction, current in the Schottky
diode is carried only by majority
carriers. Because no minority
carrier charge storage effects are
present, Schottky diodes have
carrier lifetimes of less than
100 ps and are extremely fast
switching semiconductors.
Schottky diodes are used as
rectifiers at frequencies of 50 GHz
and higher.
Another significant difference
between Schottky and p-n diodes
is the forward voltage drop.
Schottky diodes have a threshold
of typically 0.3 V in comparison to
that of 0.6 V in p-n junction
diodes. See Figure 6.
P
N
METAL N
CAPACITANCE
Under a forward bias (metal
connected to positive in an
n-doped Schottky), or forward
voltage, VF, there are many
electrons with enough thermal
energy to cross the barrier potential into the metal. Once the
applied bias exceeds the built-in
potential of the junction, the
forward current, IF, will increase
rapidly as VF increases.
When the Schottky diode is
reverse biased, the potential
barrier for electrons becomes
large; hence, there is a small
probability that an electron will
have sufficient thermal energy to
CURRENT
CAPACITANCE
CURRENT
0.6V
–
+
0.3V
–
+
BIAS VOLTAGE
BIAS VOLTAGE
PN JUNCTION
SCHOTTKY JUNCTION
Figure 6.
Through the careful manipulation
of the diameter of the Schottky
contact and the choice of metal
deposited on the n-doped silicon,
the important characteristics of
the diode (junction capacitance,
CJ; parasitic series resistance, R S;
breakdown voltage, V BR; and
forward voltage, V F,) can be
optimized for specific applications. The HSMS-270x series and
HBAT-540x series of diodes are a
case in point.
Both diodes have similar barrier
heights; and this is indicated by
corresponding values of saturation current, I S. Yet, different
contact diameters and epitaxiallayer thickness result in very
different values of junction
capacitance, C J and R S. This is
portrayed by their SPICE parameters in Table 1.
Table 1. HBAT-540x and
HSMS-270x SPICE Parameters.
Parameter
HBAT540x
HSMS270x
BV
40 V
25 V
CJ0
3.0 pF
6.7 pF
EG
0.55 eV
0.55 eV
IBV
10E-4 A
10E-4 A
IS
1.0E-7 A
1.4E-7 A
N
1.0
1.04
RS
2.4 Ω
0.65 Ω
PB
0.6 V
0.6 V
PT
2
2
M
0.5
0.5
At low values of IF ≤ 1 mA, the
forward voltages of the two
diodes are nearly identical.
However, as current rises above
10 mA, the lower series resistance
of the HSMS-270x allows for a
much lower forward voltage. This
gives the HSMS-270x a much
higher current handling capability.
The trade-off is a higher value of
junction capacitance. The forward
voltage and current plots illustrate
the differences in these two
Schottky diodes, as shown in
Figure 7.
7
HSMS-270x
I F – FORWARD CURRENT (mA)
100
HBAT-540x
10
1
.1
.01
0
0.1
0.2
0.3
0.4
0.5
0.6
VF – FORWARD VOLTAGE (V)
Figure 7. Forward Current vs.
Forward Voltage at 25°C.
Because the automatic, pick-andplace equipment used to assemble
these products selects dice from
adjacent sites on the wafer, the
two diodes which go into the
HBAT-5402 or HBAT-540C (series
pair) are closely matched —
without the added expense of
testing and binning.
Current Handling in Clipping/
Clamping Circuits
The purpose of a clipping/clamping diode is to handle high currents, protecting delicate circuits
downstream of the diode. Current
handling capacity is determined
by two sets of characteristics,
those of the chip or device itself
and those of the package into
which it is mounted.
noisy data-spikes
current
limiting
Vs
long cross-site cable
pull-down
(or pull-up)
0V
voltage limited to
Vs + Vd
0V – Vd
Consider the circuit shown in
Figure 8, in which two Schottky
diodes are used to protect a
circuit from noise spikes on a
stream of digital data. The ability
of the diodes to limit the voltage
spikes is related to their ability to
sink the associated current spikes.
The importance of current
handling capacity is shown in
Figure 9, where the forward
voltage generated by a forward
current is compared in two
diodes. The first is a conventional
Schottky diode of the type generally used in RF circuits, with an RS
of 7.7 Ω. The second is a Schottky
diode of identical characteristics,
save the R S of 1.0 Ω. For the
conventional diode, the relatively
high value of RS causes the
voltage across the diode’s terminals to rise as current increases.
The power dissipated in the diode
heats the junction, causing R S to
climb, giving rise to a runaway
thermal condition. In the second
diode with low R S , such heating
does not take place and the
voltage across the diode terminals
is maintained at a low limit even
at high values of current.
Maximum reliability is obtained in
a Schottky diode when the steady
state junction temperature is
maintained at or below 150°C,
although brief excursions to
higher junction temperatures can
be tolerated with no significant
impact upon mean-time-to-failure,
MTTF. In order to compute the
junction temperature, Equations
(1) and (3) below must be simultaneously solved.
11600 (V F – I F R S )
nT J
I F = IS e
–1
(2)
TJ = V F I F θ JC + TA
(3)
where:
IF = forward current
IS = saturation current
V F = forward voltage
RS = series resistance
TJ = junction temperature
IO = saturation current at 25°C
n = diode ideality factor
θ JC = thermal resistance from
junction to case (diode lead)
= θ package + θ chip
T A = ambient (diode lead)
temperature
Equation (1) describes the forward V-I curve of a Schottky
diode. Equation (2) provides the
value for the diode’s saturation
current, which value is plugged
into (1). Equation (3) gives the
value of junction temperature as a
function of power dissipated in
the diode and ambient (lead)
temperature.
6
5
4
Rs = 7.7 Ω
3
2
Rs = 1.0 Ω
1
0
0
0.1
0.2
0.3
0.4
IF – FORWARD CURRENT (mA)
Figure 8. Two Schottky Diodes
Are Used for Clipping/Clamping in
a Circuit.
(1)
2
1
1
T J n –4060 T J – 298
e
IS = I0
298
VF – FORWARD VOLTAGE (V)
300
Figure 9. Comparison of Two
Diodes.
0.5
The key factors in these equations
are: RS, the series resistance of the
diode where heat is generated
under high current conditions;
θ chip, the chip thermal resistance
of the Schottky die; and θ package,
or the package thermal resistance.
RS for the HBAT-540x family of
diodes is typically 2.4 Ω, other
than the HSMS-270x family, this is
the lowest of any Schottky diode
available. Chip thermal resistance
is typically 40°C/W; the thermal
resistance of the iron-alloyleadframe, SOT-23 package is
typically 460°C/W; and the thermal
resistance of the copperleadframe, SOT-323 package is
typically 110°C/W. The impact of
package thermal resistance on the
current handling capability of
these diodes can be seen in
Figures 3 and 4. Here the computed values of junction temperature vs. forward current are
shown for three values of ambient
temperature. The SOT-323 products, with their copper
leadframes, can safely handle
almost twice the current of the
larger SOT-23 diodes. Note that
the term “ambient temperature”
refers to the temperature of the
diode’s leads, not the air around
the circuit board. It can be seen
that the HBAT-540B and
HBAT-540C products in the
SOT-323 package will safely
withstand a steady-state forward
current of 330 mA when the
diode’s terminals are maintained
at 75°C.
For pulsed currents and transient
current spikes of less than one
microsecond in duration, the
junction does not have time to
reach thermal steady state.
Moreover, the diode junction may
be taken to temperatures higher
than 150°C for short timeperiods
without impacting device MTTF.
Because of these factors, higher
currents can be safely handled.
The HBAT-540x family has the
second highest current handling
capability of any Agilent diode,
next to the HSMS-270x series.
Part Number Ordering Information
Part Number
No. of Devices
Container
HBAT-5400-BLK
HBAT-5400-TR1
HBAT-5400-TR2
100
3,000
10,000
Antistatic Bag
7" Reel
13" Reel
HBAT-5402-BLK
HBAT-5402-TR1
HBAT-5402-TR2
100
3,000
10,000
Antistatic Bag
7" Reel
13" Reel
HBAT-540B-BLK
HBAT-540B-TR1
HBAT-540B-TR2
100
3,000
10,000
Antistatic Bag
7" Reel
13" Reel
HBAT-540C-BLK
HBAT-540C-TR1
HBAT-540C-TR2
100
3,000
10,000
Antistatic Bag
7" Reel
13" Reel
www.semiconductor.agilent.com
Data subject to change.
Copyright © 2000 Agilent Technologies, Inc.
Obsoletes 5968-2349E
5968-7959E (4/00)