Surface Mount RF Schottky Detector Diodes in SOT-363 (SC-70, 6 Lead) Technical Data HSMS-285L/P HSMS-286L/P/R Features • Surface Mount SOT-363 Package • High Detection Sensitivity: Up to 50 mV/µW at 915 MHz Up to 35 mV/µW at 2.45 GHz Up to 25 mV/µW at 5.80 GHz • Low Flicker Noise: -162 dBV/Hz at 100 Hz • Low FIT (Failure in Time) Rate* Package Lead Code Identification (Top View) BRIDGE QUAD UNCONNECTED TRIO 6 5 1 2 6 L Description 4 6 5 3 1 2 4 P 3 RING QUAD 5 4 • Tape and Reel Options Available 1 2 R 3 * For more information see the Surface Mount Schottky Reliability Data Sheet. DC Electrical Specifications, TC = +25°C, Single Diode Part Number HSMS- Package Marking Code[1] Lead Code Configuration 285L 285P 286L 286P 286R PL PP TL TP ZZ L P L P R Unconnected Trio Bridge Quad Unconnected Trio Bridge Quad Ring Quad Test Conditions Hewlett-Packard’s HSMS-285L/P family of zero bias Schottky detector diodes and the HSMS-286L/P/R family of DC biased detector diodes have been designed and optimized for use from 915 MHz to 5.8 GHz. They are ideal for RF/ID and RF Tag, cellular and other consumer applications requiring small and large signal detection, modulation, RF to DC conversion or voltage doubling. Available in various package configurations, these two families of detector diodes provide low cost solutions to a wide variety of design problems. Hewlett-Packard’s manufacturing techniques assure that when multiple diodes are mounted into a single SOT-363 package, they are taken from adjacent sites on the wafer, assuring the highest possible degree of match. Maximum Forward Voltage VF (mV) 150 250 0.30 250 350 0.25 IF = 0.1 mA[2] IF = 1.0 mA[2] Notes: 1. Package marking code is laser marked. 2. ∆VF for diodes in trios and quads is 15.0 mV maximum at 1.0 mA. 3. ∆CT for diodes in trios and quads is 0.05 pF maximum at -0.5 V. Typical Capacitance CT (pF) VR = 0.5 V to -1.0 V f = 1 MHz [3] 2 RF Electrical Parameters, TC = +25oC, Single Diode Part Number Typical Tangential Sensitivity Typical Voltage Sensitivity γ TSS (dBm) @ f = (mV/ µW) @ f = HSMS- 915 MHz 2.45 GHz 285L 285P Test Conditions 286L 286P 286R Test Conditions -57 -56 5.8 GHz -55 Typical Video Resistance Rv (KΩ) 915 MHz 2.45 GHz 5.8 GHz 40 30 22 8.0 Video Bandwidth = 2 MHz Zero Bias -57 -56 -55 Power in = -40 dBm RL = 100 KΩ, Zero Bias 50 35 25 5.0 Video Bandwidth = 2 MHz I b = 5 µA Power in = – 40 dBm RL = 100 KΩ, I b = 5 µA Absolute Maximum Ratings, TC = 25ºC, Single Diode Symbol PIV TJ TSTG TOP θjc Parameter Unit Absolute Maximum[1] Peak Inverse Voltage Junction Temperature Storage Temperature Operating Temperature Thermal Resistance [2] V °C °C °C °C/W 2.0 150 -65 to 150 -65 to 150 140 ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge. Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board. Equivalent Circuit Model HSMS-285A Series, HSMS-286A Series Single Diode 0.08 pF Rj 2 nH RS 0.18 pF RS = series resistance (see Table of SPICE parameters) Rj = 8.33 X 10-5 nT Ib + Is where Ib = externally applied bias current in amps Is = saturation current (see table of SPICE parameters) T = temperature, °K n = identity factor (see table of SPICE parameters) SPICE Parameters Parameter BV CJO EG IBV IS N RS PB (VJ) PT (XTI) M Units V pF eV A A Ω V HSMS-285A 3.8 0.18 0.69 3 x 10E - 4 3 x 10E - 6 1.06 25 0.35 2 0.5 HSMS-286A 7.0 0.18 0.69 10E - 5 5 x 10E - 8 1.08 5.0 0.65 2 0.5 3 1 0.1 TA = +85°C TA = +25°C TA = –55°C 10 1 .1 .01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VF – FORWARD VOLTAGE (V) 10 5.8 GHz 5.8 GHz 1 0.3 -50 0 -10 -20 -40 -30 Figure 5. +25°C Expanded Output Voltage vs. Input Power. See Figure 4. 3.1 40 2.9 OUTPUT VOLTAGE (mV) 35 30 25 20 Input Power = –30 dBm @ 2.45 GHz Data taken in fixed-tuned FR4 circuit 10 .1 1 2.5 2.3 2.1 1.9 1.7 1.5 1.3 MEASUREMENTS MADE USING A 0.9 10 FREQUENCY = 2.45 GHz PIN = -40 dBm RL = 100 KΩ 1.1 FR4 MICROSTRIP CIRCUIT. RL = 100 KΩ 5 2.7 100 BIAS CURRENT (µA) Figure 7. Voltage Sensitivity as a Function of DC Bias Current, HSMS-286A. 10 µA 1000 5 µA 100 Frequency = 2.45 GHz Fixed-tuned FR4 circuit 10 RL = 100 KΩ DIODES TESTED IN FIXED-TUNED FR4 MICROSTRIP CIRCUITS. POWER IN (dBm) Figure 4. +25°C Output Voltage vs. Input Power, HSMS-285A Series at Zero Bias, HSMS-286A Series at 3 µA Bias. OUTPUT VOLTAGE (mV) 20 µA 2.45 GHz DIODES TESTED IN FIXED-TUNED FR4 MICROSTRIP CIRCUITS. -30 1 0.25 10,000 10 POWER IN (dBm) 15 0.20 Figure 3. Forward Voltage Match, HSMS-286A Series. VOLTAGE OUT (mV) VOLTAGE OUT (mV) VOLTAGE OUT (mV) 915 MHz -40 0.15 915 MHz 2.45 GHz -50 0.10 RL = 100 KΩ 1000 0.3 ∆VF (right scale) FORWARD VOLTAGE (V) 30 RL = 100 KΩ 1 10 1 0.05 Figure 2. Forward Current vs. Forward Voltage at Temperature, HSMS-286A Series. 10000 10 IF (left scale) FORWARD VOLTAGE (V) Figure 1. +25°C Forward Current vs. Forward Voltage, HSMS-285A Series. 100 FORWARD CURRENT (µA) 10 0.01 100 100 FORWARD CURRENT (mA) IF – FORWARD CURRENT (mA) 100 FORWARD VOLTAGE DIFFERENCE (mV) Typical Parameters, Single Diode 0 10 20 30 40 50 60 70 80 90 100 TEMPERATURE (°C) Figure 8. Output Voltage vs. Temperature, HSMS-285A Series. 1 –40 –30 –20 –10 0 10 POWER IN (dBm) Figure 6. Dynamic Transfer Characteristic as a Function of DC Bias, HSMS-286A. 4 Applications Information Introduction Hewlett-Packard’s HSMS-285L and HSMS-285P zero bias Schottky diodes have been developed specifically for low cost, high volume detector applications where bias current is not available. The HSMS-286L, HSMS-286P and HSMS-286R DC biased Schottky diodes have been developed for low cost, high volume detector applications where stability over temperature is an important design consideration. Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The most common of several different types, the passivated diode, is shown in Figure 9, along with its equivalent circuit. RS METAL PASSIVATION N-TYPE OR P-TYPE EPI of the total current flowing through it. 8.33 x 10-5 n T R j = –––––––––––– = R V – R s IS + I b 0.026 = ––––– at 25°C IS + I b where n = ideality factor (see table of SPICE parameters) T = temperature in °K IS = saturation current (see table of SPICE parameters) Ib = externally applied bias current in amps IS is a function of diode barrier height, and can range from picoamps for high barrier diodes to as much as 5 µA for very low barrier diodes. The Height of the Schottky Barrier The current-voltage characteristic of a Schottky barrier diode at room temperature is described by the following equation: altered, and at the same time CJ and RS will be changed. In general, very low barrier height diodes (with high values of IS, suitable for zero bias applications) are realized on p-type silicon. Such diodes suffer from higher values of RS than do the n-type. Thus, p-type diodes are generally reserved for detector applications (where very high values of RV swamp out high RS) and n-type diodes are used for mixer applications (where high L.O. drive levels keep RV low). Measuring Diode Linear Parameters The measurement of the five elements which make up the equivalent circuit for a packaged Schottky diode (see Figure 10) is a complex task. Various techniques are used for each element. The task begins with the elements of the diode chip itself. CP LP PASSIVATION LAYER SCHOTTKY JUNCTION Cj Rj N-TYPE OR P-TYPE SILICON SUBSTRATE CROSS-SECTION OF SCHOTTKY BARRIER DIODE CHIP EQUIVALENT CIRCUIT Figure 9. Schottky Diode Chip. RS is the parasitic series resistance of the diode, the sum of the bondwire and leadframe resistance, the resistance of the bulk layer of silicon, etc. RF energy coupled into RS is lost as heat — it does not contribute to the rectified output of the diode. CJ is parasitic junction capacitance of the diode, controlled by the thickness of the epitaxial layer and the diameter of the Schottky contact. R j is the junction resistance of the diode, a function I = IS (e ( V – IR –––––––S 0.026 – 1) ) RV RS CJ On a semi-log plot (as shown in the HP catalog) the current graph will be a straight line with inverse slope 2.3 x 0.026 = 0.060 volts per cycle (until the effect of RS is seen in a curve that droops at high current). All Schottky diode curves have the same slope, but not necessarily the same value of current for a given voltage. This is determined by the saturation current, IS, and is related to the barrier height of the diode. Through the choice of p-type or n-type silicon, and the selection of metal, one can tailor the characteristics of a Schottky diode. Barrier height will be FOR THE HSMS-285A or HSMS-286A SERIES CP = 0.08 pF LP = 2 nH CJ = 0.18 pF RS = 25 Ω RV = 9 KΩ Figure 10. Equivalent Circuit of a Schottky Diode. RS is perhaps the easiest to measure accurately. The V-I curve is measured for the diode under forward bias, and the slope of the curve is taken at some relatively high value of current (such as 5 mA). This slope is converted into a resistance Rd. 0.026 RS = Rd – –––––– If 5 RV and CJ are very difficult to measure. Consider the impedance of CJ = 0.16 pF when measured at 1 MHz — it is approximately 1 MΩ. For a well designed zero bias Schottky, RV is in the range of 5 to 25 KΩ, and it shorts out the junction capacitance. Moving up to a higher frequency enables the measurement of the capacitance, but it then shorts out the video resistance. The best measurement technique is to mount the diode in series in a 50 Ω microstrip test circuit and measure its insertion loss at low power levels (around -20 dBm) using an HP8753C network analyzer. The resulting display will appear as shown in Figure 11. -10 50 Ω INSERTION LOSS (dB) -15 0.16 pF 50 Ω -20 -25 50 Ω 9 KΩ -30 50 Ω -35 -40 3 10 100 1000 3000 FREQUENCY (MHz) Figure 11. Measuring CJ and R V. At frequencies below 10 MHz, the video resistance dominates the loss and can easily be calculated from it. At frequencies above 300 MHz, the junction capacitance sets the loss, which plots out as a straight line when frequency is plotted on a log scale. Again, calculation is straightforward. LP and CP are best measured on the HP8753C, with the diode terminating a 50 Ω line on the input port. The resulting tabulation of S11 can be put into a microwave linear analysis program having the five element equivalent circuit with RV, CJ and RS fixed. The optimizer can then adjust the values of LP and CP until the calculated S11 matches the measured values. Note that extreme care must be taken to deembed the parasitics of the 50 Ω test fixture. Detector Circuits When DC bias is available, Schottky diode detector circuits can be used to create low cost RF and microwave receivers with a sensitivity of -55 dBm to -57 dBm.[1] Moreover, since external DC bias sets the video impedance of such circuits, they display classic square law response over a wide range of input power levels[2,3]. These circuits can take a variety of forms, but in the most simple case they appear as shown in Figure 12. This is the basic detector circuit used with the HSMS-286X family of diodes. Where DC bias is not available, a zero bias Schottky diode is used to replace the conventional Schottky in these circuits, and bias choke L1 is eliminated. The circuit then is reduced to a diode, an RF impedance matching network and (if required) a DC return choke and a capacitor. This is the basic detector circuit used with the HSMS-285A family of diodes. [1] Output voltage can be virtually doubled and input impedance (normally very high) can be halved through the use of the voltage doubler circuit[4]. In the design of such detector circuits, the starting point is the equivalent circuit of the diode, as shown in Figure 10. Of interest in the design of the video portion of the circuit is the diode’s video impedance — the other four elements of the equivalent circuit disappear at all reasonable video frequencies. In general, the lower the diode’s video impedance, the better the design. DC BIAS L1 RF IN Z-MATCH NETWORK VIDEO OUT DC BIAS L1 RF IN Z-MATCH NETWORK VIDEO OUT Figure 12. Basic Detector Circuits. The situation is somewhat more complicated in the design of the RF impedance matching network, which includes the package inductance and capacitance (which can be tuned out), the series resistance, the junction Hewlett-Packard Application Note 923, Schottky Barrier Diode Video Detectors. Hewlett-Packard Application Note 986, Square Law and Linear Detection. [3] Hewlett-Packard Application Note 956-5, Dynamic Range Extension of Schottky Detectors. [4] Hewlett-Packard Application Note 956-4, Schottky Diode Voltage Doubler. [2] 6 capacitance and the video resistance. Of these five elements of the diode’s equivalent circuit, the four parasitics are constants and the video resistance is a function of the current flowing through the diode. 26,000 RV ≈ –––––– IS + I b where IS = diode saturation current in µA Ib = bias current in µA Saturation current is a function of the diode’s design,[5] and it is a constant at a given temperature. For the HSMS-285X series, it is typically 3 to 5 µA at 25°C. For the medium barrier HSMS-2860 family, saturation current at room temperature is on the order of 50 nA. Together, saturation and (if used) bias current set the detection sensitivity, video resistance and input RF impedance of the Schottky detector diode. Since no external bias is used with the HSMS-285A series, a single transfer curve at any given frequency is obtained, as shown in Figure 4. Where bias current is used, some tradeoff in sensitivity and square law dynamic range is seen, as shown in Figure 6 and described in reference [3]. The most difficult part of the design of a detector circuit is the input impedance matching network. A discussion of such circuits can be found in the data sheet for the HSMS-285A/HSMS286A single SOT-323 detector diodes (Hewlett-Packard publication 5965-4704E). [5] Six Lead Circuits The differential detector is often used to provide temperature compensation for a Schottky detector, as shown in Figure 13. bias matching network differential amplifier Figure 13. Voltage Doubler. These circuits depend upon the use of two diodes having matched Vf characteristics over all operating temperatures. This is best achieved by using two diodes in a single package, such as the HSMS-2825 in the larger SOT-143 package. However, such circuits generally use single diode detectors, either series or shunt mounted diode. The voltage doubler (reference [4]) offers the advantage of twice the output voltage for a given input power. The two concepts can be combined into the differential voltage doubler, as shown in Figure 14. bias differential amplifier matching network Figure 14. Differential Voltage Doubler. Here, all four diodes of the HSMS-286P are matched in their Vf characteristics, because they came from adjacent sites on the Hewlett-Packard Application Note 969, An Optimum Zero Bias Schottky Detector Diode. wafer. A similar circuit can be realized using the HSMS-286R ring quad. Other configurations of six lead Schottky products can be used to solve circuit design problems while saving space and cost. Thermal Considerations The obvious advantage of the SOT-363 over the SOT-143 is combination of smaller size and two extra leads. However, the copper leadframe in the SOT-363 has a thermal conductivity four times higher than the Alloy 42 leadframe of the SOT-143, which enables it to dissipate more power. The maximum junction temperature for these three families of Schottky diodes is 150°C under all operating conditions. The following equation, equation 1, applies to the thermal analysis of diodes: T j = (V f I f + PRF) θ jc + Ta where Tj = junction temperature Ta = diode case temperature θjc = thermal resistance VfIf = DC power dissipated PRF = RF power dissipated Equation (1). Note that θjc, the thermal resistance from diode junction to the foot of the leads, is the sum of two component resistances, θjc = θpkg + θchip Equation (2). 7 11600 (Vf – If Rs) nT e –1 If = IS where n = ideality factor T = temperature in °K Rs = diode series resistance Equation (3). and IS (diode saturation current) is given by 2 n Is = I 0 T ) ( 298 – 4060 e 1 ( 1T – 298 ) Equation (4). Equations (1) and (3) are solved simultaneously to obtain the value of junction temperature for given values of diode case temperature, DC power dissipation and RF power dissipation. It should be noted that curves such as those given in Figures 15 and 16 are highly dependent upon the exact design of the input impedance matching network. The designer will have to experiment with bias current using his specific design. 8.33 x 10-5 nT RV = –––––––––––– IS + I b 120 INPUT POWER = –30 dBm where T is the diode’s temperature in °K. As can be seen, temperature has a strong effect upon RV, and this will in turn affect video bandwidth and input RF impedance. A glance at Figure 7 suggests that the proper choice of bias current in the HSMS-286A series can minimize variation over temperature. The detector circuits described earlier were tested over temperature. The 915 MHz voltage doubler using the HSMS-286A series produced the output voltages as shown in Figure 15. The use of 3 µA of bias resulted in the highest voltage sensitivity, but at the cost of a wide variation over temperature. Dropping the bias to 1 µA produced a detector with much less temperature variation. A similar experiment was conducted with the HSMS-286A series in the 5.8 GHz detector. Once again, reducing the bias to some level under 3 µA stabilized the output of the detector over a wide temperature range. OUTPUT VOLTAGE (mV) Equation (1) would be straightforward to solve but for the fact that diode forward voltage is a function of temperature as well as forward current. The equation, equation 3, for Vf is: Temperature Compensation The compression of the detector’s transfer curve is beyond the scope of this data sheet, but some general comments can be made. As was given earlier, the diode’s video resistance is given by 3.0 µA 100 80 1.0 µA 10 µA 60 40 -55 0.5 µA -35 -15 5 25 45 65 85 TEMPERATURE (°C) Figure 15. Output Voltage vs. Temperature and Bias Current in the 915 MHz Voltage Doubler using the HSMS-286A Series. 35 INPUT POWER = –30 dBm OUTPUT VOLTAGE (mV) Package thermal resistance for the SOT-363 package is approximately 100°C/W, and the chip thermal resistance for these three families of diodes is approximately 40°C/W. The designer will have to add in the thermal resistance from diode case to ambient — a poor choice of circuit board material or heat sink design can make this number very high. 3.0 µA 25 10 µA 1.0 µA 15 0.5 µA 5 -55 -35 -15 5 25 45 65 85 TEMPERATURE (°C) Figure 16. Output Voltage vs. Temperature and Bias Current in the 5.80 GHz Voltage Detector using the HSMS-286A Series. 8 Diode Burnout Any Schottky junction, be it an RF diode or the gate of a MESFET, is relatively delicate and can be burned out with excessive RF power. Many crystal video receivers used in RFID (tag) applications find themselves in poorly controlled environments where high power sources may be present. Examples are the areas around airport and FAA radars, nearby ham radio operators, the vicinity of a broadcast band transmitter, etc. In such environments, the Schottky diodes of the receiver can be protected by a device known as a limiter diode.[8] Formerly available only in radar warning receivers and other high cost electronic warfare applications, these diodes have been adapted to commercial and consumer circuits. Hewlett-Packard offers a complete line of surface mountable PIN limiter diodes. Most notably, our HSMP-4820 (SOT-23) can act as a very fast (nanosecond) powersensitive switch when placed between the antenna and the Schottky diode, shorting out the RF circuit temporarily and reflecting the excessive RF energy back out the antenna. 0.075 0.035 0.016 Figure 17. PCB Pad Layout (dimensions in inches). SMT Assembly Reliable assembly of surface mount components is a complex process that involves many material, process, and equipment factors, including: method of heating (e.g., IR or vapor phase reflow, wave soldering, etc.) circuit board material, conductor thickness and pattern, type of solder alloy, and the thermal conductivity and thermal mass of components. Components with a low mass, such as the SOT-363 package, will reach solder reflow temperatures faster than those with a greater mass. HP’s SOT-363 diodes have been qualified to the time-temperature profile shown in Figure 18. This After ramping up from room temperature, the circuit board with components attached to it (held in place with solder paste) passes through one or more preheat zones. The preheat zones increase the temperature of the board and components to prevent thermal shock and begin evaporating solvents from the solder paste. The reflow zone briefly elevates the temperature sufficiently to produce a reflow of the solder. The rates of change of temperature for the ramp-up and cooldown zones are chosen to be low enough to not cause deformation of the board or damage to components due to thermal shock. The maximum temperature in the reflow zone (TMAX) should not exceed 235 °C. These parameters are typical for a surface mount assembly process for HP SOT-363 diodes. As a general guideline, the circuit board and components should be exposed only to the minimum temperatures and times necessary to achieve a uniform reflow of solder. 250 Assembly Instructions TMAX 200 TEMPERATURE (°C) SOT-363 PCB Footprint A recommended PCB pad layout for the miniature SOT-363 (SC-70 6 lead) package is shown in Figure 17 (dimensions are in inches). This layout provides ample allowance for package placement by automated assembly equipment without adding parasitics that could impair the performance. profile is representative of an IR reflow type of surface mount assembly process. 0.026 150 Reflow Zone 100 Preheat Zone Cool Down Zone 50 0 0 60 120 180 TIME (seconds) Figure 18. Surface Mount Assembly Profile. [6] Hewlett-Packard Application Note 956-4, Schottky Diode Voltage Doubler. 240 300 9 Package Dimensions Pin Connections and Package Marking Outline SOT-363 (SC-70, 6 Lead) 1 PACKAGE MARKING CODE 2 2.20 (0.087) 2.00 (0.079) XX 1.35 (0.053) 1.15 (0.045) 3 0.650 BSC (0.025) 0.425 (0.017) TYP. 2.20 (0.087) 1.80 (0.071) 0.10 (0.004) 0.00 (0.00) 0.30 REF. 1.00 (0.039) 0.80 (0.031) 0.25 (0.010) 0.15 (0.006) 10° 0.30 (0.012) 0.10 (0.004) DIMENSIONS ARE IN MILLIMETERS (INCHES) Part Number Ordering Information No. of Devices Container HSMS-285A-BLK [1] 3000 100 7" Reel antistatic bag HSMS-286A-TR1[2] HSMS-286A-BLK [2] 3000 100 7" Reel antistatic bag Part Number HSMS-285A-TR1[1] Notes: 1. “A” = L or P only 2. “A” = L, P or R 0.20 (0.008) 0.10 (0.004) GU 1.30 (0.051) REF. 6 5 4 Notes: 1. Package marking provides orientation and identification. 2. See “Electrical Specifications” for appropriate package marking. 10 Device Orientation REEL TOP VIEW END VIEW 4 mm CARRIER TAPE USER FEED DIRECTION 8 mm ## ## ## ## Note: “##” represents Package Marking Code. Package marking is right side up with carrier tape perforations at top. Conforms to Electronic Industries RS-481, “Taping of Surface Mounted Components for Automated Placement.” Standard Quantity is 3,000 Devices per Reel. COVER TAPE Tape Dimensions and Product Orientation For Outline SOT-363 (SC-70, 6 Lead) P P2 D P0 E F W C D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) K0 8° MAX. A0 DESCRIPTION 5° MAX. B0 SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 2.24 ± 0.10 2.34 ± 0.10 1.22 ± 0.10 4.00 ± 0.10 1.00 + 0.25 0.088 ± 0.004 0.092 ± 0.004 0.048 ± 0.004 0.157 ± 0.004 0.039 + 0.010 PERFORATION DIAMETER PITCH POSITION D P0 E 1.55 ± 0.05 4.00 ± 0.10 1.75 ± 0.10 0.061 ± 0.002 0.157 ± 0.004 0.069 ± 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 ± 0.30 0.255 ± 0.013 0.315 ± 0.012 0.010 ± 0.0005 COVER TAPE WIDTH TAPE THICKNESS C Tt 5.4 ± 0.10 0.062 ± 0.001 0.205 ± 0.004 0.0025 ± 0.00004 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 ± 0.05 0.138 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 11 For technical assistance or the location of your nearest Hewlett-Packard sales office, distributor or representative call: Americas/Canada: 1-800-235-0312 or 408-654-8675 Far East/Australasia: Call your local HP sales office. Japan: (81 3) 3335-8152 Europe: Call your local HP sales office. Data subject to change. Copyright © 1997 Hewlett-Packard Co. Printed in U.S.A. 5966-2032E (10/97)