90 V/1.0 Ω, Hermetically Sealed, Power MOSFET Optocoupler Technical Data HSSR-711X* 5962-9314001 *See matrix for available extensions Features Applications • Dual Marked with Device Part Number and DSCC Standard Microcircuit Drawing • ac/dc Signal & Power Switching • Compact Solid-State Bidirectional Switch • Manufactured and Tested on a MIL-PRF-38534 Certified Line • QML-38534 • MIL-PRF-38534 Class H • Space Level Processing Available • Hermetically Sealed 8-Pin Dual In-Line Package • Small Size and Weight • Performance Guaranteed over -55°C to +125°C • Connection A 0.8 A, 1.0 Ω • Connection B 1.6 A, 0.25 Ω • 1500 Vdc Withstand Test Voltage • High Transient Immunity • 5 Amp Output Surge Current • Military and Space • High Reliability Systems • Standard 28 Vdc and 48 Vdc Load Driver • Standard 24 Vac Load Driver • Aircraft Controls • ac/dc Electromechanical and Solid State Relay Replacement • I/O Modules • Harsh Industrial Environments eight-pin, hermetic, dual-in-line, ceramic packages. The devices operate exactly like a solid-state relay. The products are capable of operation and storage over the full military temperature range and can be purchased as a standard product (HSSR-7110), with full MIL-PRF-38534 Class H testing (HSSR-7111), or from the DSCC Standard Microcircuit Drawing (SMD) 5962-93140. These devices may be purchased with a variety of lead bend and plating options. See Selection Guide Table for details. Standard Microcircuit (SMD) parts are available for each lead style. Description The HSSR-7110, HSSR-7111 and SMD 5962-9314001 are single channel power MOSFET optocouplers, constructed in Functional Diagrams CONNECTION B DC CONNECTION CONNECTION A AC/DC CONNECTION IO IO 1 NC 8 1 NC + 8 IF IF + 2 7 VF + 2 VO – 3 4 NC 6 5 VF – 3 – 7 4 NC 6 + VO – TRUTH TABLE INPUT OUTPUT H CLOSED L OPEN 5 CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD. Powered by ICminer.com Electronic-Library Service CopyRight 2003 2 All devices are manufactured and tested on a MIL-PRF-38534 certified line and are included in the DSCC Qualified Manufacturers List, QML-38534 for Hybrid Microcircuits. Each device contains an AlGaAs light emitting diode optically coupled to a photovoltaic diode stack which drives two discrete power MOSFETs. The device operates as a solid-state replacement for single-pole, normally open, (1 Form A) relays used for general purpose switching of signals and loads in high reliability applications. The devices feature logic level input control and very low output on-resistance, making them suitable for both ac and dc loads. Connection A, as shown in the Functional Diagram, allows the device to switch either ac or dc loads. Connection B, with the polarity and pin configuration as shown, allows the device to switch dc loads only. The advantage of Connection B is that the on-resistance is significantly reduced, and the output current capability increases by a factor of two. Selection Guide–Package Styles and Lead Configuration Options Agilent Part # and Options Commercial MIL-PRF-38534 Class H Standard Lead Finish Solder Dipped Butt Joint/Gold Plate Gull Wing/Soldered Crew Cut/Gold Plate SMD Part # Prescript for all below Either Gold or Soldered Gold Plate Solder Dipped Butt Joint/Gold Plate Butt Joint/Soldered Gull Wing/Soldered Crew Cut/Gold Plate Crew Cut/Soldered The devices are convenient replacements for mechanical and solid state relays where high component reliability with standard footprint lead configuration is desirable. Devices may be purchased with a variety of lead bend and plating options. See Selection Guide table for details. Standard Microcircuit Drawing (SMD) parts are available for each package and lead style. The HSSR-7110, HSSR-7111, and SMD 5962-93140 are designed to switch loads on 28 Vdc power systems. They meet 80 V surge and ± 600 V spike requirements. HSSR-7110 HSSR-7111 Gold Option #200 Option #100 Option #300 Option #600 59629314001HPX 9314001HPC 9314001HPA 9314001HYC 9314001HYA 9314001HXA 9314001HZC 9314001HZA 9.40 (0.370) 9.91 (0.390) 0.76 (0.030) 1.27 (0.050) Outline Drawing 8-pin DIP Through Hole 8.13 (0.320) MAX. 7.16 (0.282) 7.57 (0.298) 4.32 (0.170) MAX. 0.51 (0.020) MIN. 3.81 (0.150) MIN. 2.29 (0.090) 2.79 (0.110) 0.51 (0.020) MAX. NOTE: DIMENSIONS IN MILLIMETERS (INCHES). Powered by ICminer.com Electronic-Library Service CopyRight 2003 0.20 (0.008) 0.33 (0.013) 7.36 (0.290) 7.87 (0.310) 3 Device Marking Agilent DESIGNATOR Agilent P/N DSCC SMD* DSCC SMD* PIN ONE/ ESD IDENT A QYYWWZ XXXXXX XXXXXXX XXX XXX 50434 COMPLIANCE INDICATOR,* DATE CODE, SUFFIX (IF NEEDED) COUNTRY OF MFR. Agilent FSCN* * QUALIFIED PARTS ONLY Absolute Maximum Ratings Storage Temperature Range ........................................ -65°C to +150°C Operating Ambient Temperature – TA .......................... -55°C to +125°C Junction Temperature – TJ ......................................................... +150°C Operating Case Temperature – TC ......................................... +145°C [1] Lead Solder Temperature ............................................... 260°C for 10 s (1.6 mm below seating plane) Average Input Current – IF ........................................................... 20 mA Peak Repetitive Input Current – IFPK ............................................ 40 mA (Pulse Width < 100 ms; duty cycle < 50%) Peak Surge Input Current – IFPK surge ....................................... 100 mA (Pulse Width < 0.2 ms; duty cycle < 0.1%) Reverse Input Voltage – VR ............................................................... 5 V Average Output Current – Figure 2 Connection A – IO ....................................................................... 0.8 A Connection B – IO ...................................................................... 1.6 A Single Shot Output Current – Figure 3 Connection A – IOPK surge (Pulse width < 10 ms) ...................... 5.0 A Connection B – IOPK surge (Pulse width < 10 ms) ................... 10.0 A Output Voltage Connection A – VO ...................................................... -90 V to +90 V Connection B – VO .......................................................... 0 V to +90 V Average Output Power Dissipation – Figure 4 ....................... 800 mW[2] Thermal Resistance Maximum Output MOSFET Junction to Case – θJC = 15°C/W ESD Classification (MIL-STD-883, Method 3015) .......................................... (∆∆ ), Class 2 Recommended Operating Conditions Parameter Symbol Min. Max. Units Input Current (on) IF(ON) 5 20 mA Input Voltage (off) VF(OFF) 0 0.6 V TA -55 +125 °C Operating Temperature Powered by ICminer.com Electronic-Library Service CopyRight 2003 4 Hermetic Optocoupler Options Option 100 Description Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is available on commercial and hi-rel product. 4.32 (0.170) MAX. 0.51 (0.020) MIN. 2.29 (0.090) 2.79 (0.110) 1.14 (0.045) 1.40 (0.055) 0.20 (0.008) 0.33 (0.013) 0.51 (0.020) MAX. 7.36 (0.290) 7.87 (0.310) 200 Lead finish is solder dipped rather than gold plated. This option is available on commercial and hi-rel product. DSCC Drawing part numbers contain provisions for lead finish. 300 Surface mountable hermetic optocoupler with leads cut and bent for gull wing assembly. This option is available on commercial and hi-rel product. This option has solder dipped leads. 4.57 (0.180) MAX. 0.51 (0.020) MIN. 2.29 (0.090) 2.79 (0.110) 600 1.40 (0.055) 1.65 (0.065) 5° MAX. 0.51 (0.020) MAX. 4.57 (0.180) MAX. 0.20 (0.008) 0.33 (0.013) 9.65 (0.380) 9.91 (0.390) Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is available on commercial and hi-rel product. 3.81 (0.150) MAX. 0.51 (0.020) MIN. 2.29 (0.090) 2.79 (0.110) Note: Dimensions in millimeters (inches). Powered by ICminer.com Electronic-Library Service CopyRight 2003 0.20 (0.008) 0.33 (0.013) 1.02 (0.040) TYP. 7.36 (0.290) 7.87 (0.310) 5 Electrical Specifications TA =-55°C to +125°C, unless otherwise specified. See note 9. Parameter Output Withstand Voltage Output Connection OnA Resistance Sym. Group A, Subgroup |VO(OFF)| 1, 2, 3 VF = 0.6 V, IO = 10 µA R(ON) 1, 2, 3 IF = 10 mA, IO = 800 mA, (pulse duration ≤ 30 ms) 0.40 1.0 IF = 10 mA, IO = 1.6 A, (pulse duration ≤ 30 ms) 0.12 0.25 10-4 1.24 Connection B Output Leakage Current Test Conditions Min. Typ.* Max. Units 90 IO(OFF) 1, 2, 3 VF = 0.6 V, VO = 90 V, Input Forward Voltage VF 1, 2, 3 IF = 10 mA 1.0 Input Reverse Breakdown Voltage VR 1, 2, 3 IR = 100 µA 5.0 Input-Output Insulation II-O 1 Turn On Time tON 9, 10, 11 IF = 10 mA, VDD = 28 V, IO = 800 mA Turn Off Time tOFF 9,10,11 IF = 10 mA, VDD = 28 V, IO = 800 mA Output Transient Rejection dVo dt 9 VPEAK = 50 V, CM = 1000 pF, CL = 15 pF, R M ≥ 1 MΩ Input-Output Transient Rejection dVio dt 9 VDD = 5 V, VI–O(PEAK) = 50 V, RL = 20 kΩ, CL = 15 pF 110 V 5 Ω 6,7 10 µA 8 1.7 V 9 Notes 3 V RH ≤ 45%, t = 5 s, VI-O = 1500 Vdc, TA = 25°C 1.0 µA 1.25 6.0 ms 1,10, 11, 12, 13 0.02 0.25 ms 1,10, 14,15 1000 V/µs 17 500 V/µs 18 *All typical values are at TA = 25°C, IF(ON) = 10 mA, VF(OFF) = 0.6 V unless otherwise specified. Powered by ICminer.com Electronic-Library Service CopyRight 2003 Fig. 4, 5 6 Typical Characteristics All typical values are at TA = 25°C, IF(ON) = 10 mA, VF(OFF) = 0.6 V unless otherwise specified. Parameter Output Off-Capacitance Output Offset Voltage Input Diode Temperature Coefficient Input Capacitance Input-Output Capacitance Input-Output Resistance Symbol CO(OFF) |VOS| ∆VF/∆TA Test Conditions VO = 28 V, f = 1 MHz IF = 10 mA, IO = 0 mA IF = 10 mA Typ. 145 2 -1.4 Units pF µV mV/C CIN CI-O RI-O VF = 0 V, f = 1 MHz VI-O = 0 V, f = 1 MHz VI-O = 500 V, t = 60 s 20 1.5 1013 pF pF Ω tON IFPK = 100 mA, IFSS = 10 mA VDD = 28 V, IO = 800 mA 0.22 ms Turn On Time With Peaking Fig. 16 19 Notes 7 8 4 4 1 6 Notes: 1. Maximum junction to case thermal resistance for the device is 15°C/W, where case temperature, TC, is measured at the center of the package bottom. 2. For rating, see Figure 4. The output power PO rating curve is obtained when the part is handling the maximum average output current IO as shown in Figure 2. 3. During the pulsed RON measurement (IO duration <30 ms), ambient (TA) and case temperature (T C) are equal. 4. Device considered a two terminal device: pins 1 through 4 shorted together and pins 5 through 8 shorted together. 5. This is a momentary withstand test, not an operating condition. 6. For a faster turn-on time, the optional peaking circuit shown in Figure 1 may be implemented. 7. VOS is a function of IF , and is defined between pins 5 and 8, with pin 5 as the reference. VOS must be measured in a stable ambient (free of temperature gradients). 8. Zero-bias capacitance measured between the LED anode and cathode. 9. Standard parts receive 100% testing at 25°C (Subgroups 1 and 9). SMD and class H parts receive 100% testing at 25°C, 125°C and -55°C (Subgroups 1 and 9, 2 and 10, 3 and 11 respectively). CAUTION: Maximum Switching Frequency – Care should be taken during repetitive switching of loads so as not to exceed the maximum output current, maximum output power dissipation, maximum case temperature, and maximum junction temperature. HSSR-7110 VCC (+5V) 1 8 + 2 VF – 3 7 6 4 5 IF R2 1200 Ω R1 330 Ω R3 C 15 µF IN 1/4 54ACTOO 1/4 54ACTOO* R1 = REQUIRED CURRENT LIMITING RESISTOR FOR I F (ON) = 10 mA. R2 = PULL-UP RESISTOR FOR VF (OFF) < 600 mV; IF (V CC - VOH) < 600 mV, OMIT R2. R3, C = OPTIONAL PEAKING CIRCUIT. TYPICAL VALUES * USE SECOND GATE IF IF (PK) > 50 mA REMINDER: TIE ALL UNUSED INPUTS TO GROUND OR V CC Figure 1. Recommended Input Circuit. Powered by ICminer.com Electronic-Library Service CopyRight 2003 R3 (Ω) – 330 100 33 IF (PK) (mA) HSSR-7110 tON (ms) 10 (NO PK) 20 40 100 2.0 1.0 0.48 0.22 0.8 0.6 0.4 CONNECTION – A 0.2 IF 10 mA θCA = 40° C/W θCA = 80° C/W -25 5 35 65 95 125 155 IF 11 10 9 CONNECTION–B 8 7 6 5 CONNECTION–A 4 3 10 200 Figure 2. Maximum Average Output Current Rating vs. Ambient Temperature. 600 800 1000 NORMALIZED TYPICAL OUTPUT RESISTANCE 1.06 1.04 1.02 1.00 0.98 0.96 30 ms) 1.2 1.0 0.8 5 35 65 95 0.6 -55 125 Figure 5. Normalized Typical Output Withstand Voltage vs. Temperature. CONNECTION A VF = 0.6 V VO = 90 V 10-9 -10 10 -11 10 20 35 65 95 125 TA – TEMPERATURE – °C Figure 8. Typical Output Leakage Current vs. Temperature. 5 35 65 95 125 Figure 6. Normalized Typical Output Resistance vs. Temperature. IF – INPUT FORWARD CURRENT – A 10-7 -25 TA – AMBIENT TEMPERATURE – °C TA – AMBIENT TEMPERATURE – °C 10-8 0.4 0.2 10-1 10-2 10-3 TA = 125°C -4 10 TA = 25°C 10-5 TA = -55°C 10-6 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF – INPUT FORWARD VOLTAGE – V Figure 9. Typical Input Forward Current vs. Input Forward Voltage. Powered by ICminer.com Electronic-Library Service CopyRight 2003 CONNECTION – A IF 10 mA θCA = 40° C/W θCA = 80° C/W 0 -55 -25 5 35 65 95 125 155 0.8 CONNECTION – A IF 10 mA 1.6 I = 800 mA O (PULSE DURATION 1.4 0.94 -25 0.6 Figure 4. Output Power Rating vs. Ambient Temperature. 1.8 VF = 0.6 V 1.08 I = 10 µA O 0.92 -55 0.8 TA – AMBIENT TEMPERATURE – °C Figure 3. Single Shot (non-repetitive) Output Current vs. Pulse Duration. 1.10 NORMALIZED TYPICAL OUTPUT WITHSTAND VOLTAGE 400 1.0 PULSE DURATION – ms TA – AMBIENT TEMPERATURE – °C IO(OFF) – OUTPUT LEAKAGE CURRENT – A 10 mA IO – OUTPUT CURRENT – A 0 -55 12 IOPK SURGE – OUTPUT CURRENT – A IO – OUTPUT CURRENT – A 1.0 PO – OUTPUT POWER DISSIPATION – W 7 CONNECTION – A 0.6 IO 10 mA IO (PULSE DURATION 30 ms) 0.4 0.2 0 TA = 125°C -0.2 TA = 25°C -0.4 TA = -55°C -0.6 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 VO – OUTPUT VOLTAGE – V Figure 7. Typical On State Output I-V Characteristics. 8 VDD 50% PULSE GEN. ZO = 50 Ω tf = tr = 5 ns 50% IF RL HSSR-7110 P.W. = 15 ms 1 8 + 2 VF – 3 7 6 4 5 VO MONITOR NODE IF VO 90% CL = 25 pF (CL INCLUDES PROBE AND FIXTURE CAPACITANCE) IF MONITOR 10% R (MONITOR) 200 Ω tON tOFF GND GND Figure 10. Switching Test Circuit for tON, tOFF. 2.0 1.8 1.6 1.4 1.2 1.0 0.8 -55 -25 5 35 65 95 2.6 2.2 1.4 1.0 0.6 5 15 14.4 14.2 14.0 13.8 13.6 13.4 -25 5 35 65 95 1.0 0.8 0.6 0.4 0 20 0 10 20 Figure 13. Typical Turn On Time vs. Voltage. 30 25 20 15 10 5 10 15 IF – INPUT CURRENT – mA TA – TEMPERATURE – °C Figure 14. Typical Turn Off Time vs. Temperature. 35 5 125 CONNECTION A VDD = 28 V IO = 800 mA TA = 25°C 40 Figure 15. Typical Turn Off Time vs. Input Current. Powered by ICminer.com Electronic-Library Service CopyRight 2003 30 40 50 60 70 80 90 VDD – VOLTAGE – V 45 CONNECTION A IF = 10 mA VDD = 28 V IO = 800 mA TOFF – TURN OFF TIME – µs TOFF – TURN OFF TIME – µs 10 Figure 12. Typical Turn On Time vs. Input Current. 15.0 13.2 -55 1.2 IF – INPUT CURRENT – mA Figure 11. Typical Turn On Time vs. Temperature. 14.6 1.6 1.4 0.2 TA – TEMPERATURE – °C 14.8 CONNECTION - A IF = 10 mA IO = 800 mA TA = 25°C 1.8 1.8 0.2 125 CONNECTION A VDD = 28 V IO = 800 mA TA = 25°C 20 CO(OFF) – OUTPUT OFF CAPACITANCE – pF 2.2 TON – TURN ON TIME – ms TON – TURN ON TIME – ms 2.4 2.0 3.0 CONNECTION A IF = 10 mA VDD = 28 V IO = 800 mA TON – TURN ON TIME – ms 2.6 440 CONNECTION A f = 1 MHz TA = 25°C 400 360 320 280 240 200 160 120 0 5 10 15 20 25 VO(OFF) – OUTPUT VOLTAGE – V Figure 16. Typical Output Off Capacitance vs. Output Voltage. 30 9 HSSR-7110 1 8 + 2 VF – 3 7 6 4 5 VM MONITOR NODE IF INPUT OPEN CM + RM VPEAK – PULSE GENERATOR CM INCLUDES PROBE AND FIXTURE CAPACITANCE RM INCLUDES PROBE AND FIXTURE RESISTANCE 90% 90% VPEAK 10% 10% tr VM (MAX) tf 5V (0.8) V(PEAK) dVO (0.8) V(PEAK) = OR tr tf dt OVERSHOOT ON VPEAK IS TO BE Figure 17. Output Transient Rejection Test Circuit. Powered by ICminer.com Electronic-Library Service CopyRight 2003 10%. 10 VDD HSSR-7110 RL VO 1 8 + 2 VF – 3 7 CL 6 (CL INCLUDES PROBE PLUS FIXTURE CAPACITANCE ) 4 5 IF S1 A B VIN VI-O + – PULSE GENERATOR 90% 90% VI-O(PEAK) 10% 10% tf tr VO(OFF) S1 AT A (VF = 0 V) VO(OFF) (min) 3.25 V VO(ON) (max) VO(ON) S1 AT B (IF = 10 mA) (0.8) VI-O(PEAK) dVI-O (0.8) VI-O(PEAK) = OR tf dt tr OVERSHOOT ON VI-O(PEAK) IS TO BE 10% Figure 18. Input-Output Transient Rejection Test Circuit. ISOTHERMAL CHAMBER HSSR-7110 IF 1 8 + + 2 7 – 3 6 4 VOS 5 – Figure 19. Voltage Offset Test Setup. Powered by ICminer.com Electronic-Library Service CopyRight 2003 DIGITAL NANOVOLTMETER 0.8 11 HSSR-7110 1 8 2 7 3 6 4 5 ROUT VO (SEE NOTE) 1.0 Ω VIN RIN 200 Ω 5.5 V ROUT 1.0 Ω NOTE: IN ORDER TO DETERMINE VOUT CORRECTLY, THE CASE TO AMBIENT THERMAL IMPEDANCE MUST BE MEASURED FOR THE BURN-IN BOARDS TO BE USED. THEN, KNOWING θCA, DETERMINE THE CORRECT OUTPUT CURRENT PER FIGURES 2 AND 4 TO INSURE THAT THE DEVICE MEETS THE DERATING REQUIREMENTS AS SHOWN. Figure 20. Burn-In Circuit. Tje Tjd Tjf1 104 15 Tjf2 15 15 TC θCA TA Tje = LED JUNCTION TEMPERATURE Tjf1 = FET 1 JUNCTION TEMPERATURE Tjf2 = FET 2 JUNCTION TEMPERATURE Tjd = FET DRIVER JUNCTION TEMPERATURE TC = CASE TEMPERATURE (MEASURED AT CENTER OF PACKAGE BOTTOM) TA = AMBIENT TEMPERATURE (MEASURED 6" AWAY FROM THE PACKAGE) θCA = CASE-TO-AMBIENT THERMAL RESISTANCE ALL THERMAL RESISTANCE VALUES ARE IN °C/W Figure 21. Thermal Model. Applications Information Thermal Model The steady state thermal model for the HSSR-7110 is shown in Figure 21. The thermal resistance values given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistances between the LED and other internal nodes are very large in comparison with the other terms and are omitted for simplicity. The components do, however, interact indirectly through θCA, the case-to-ambient thermal resistance. All heat generated flows through θCA, which raises the case temperature TC accordingly. The value of θCA depends on the conditions of the board design and is, therefore, determined by the designer. The maximum value for each output MOSFET junction-to-case thermal resistance is specified as 15°C/W. The thermal resistance from FET driver junction-to-case is also 15°C/W. The power dissipation in the FET driver, however, is negligible in comparison to the MOSFETs. On-Resistance and Rating Curves The output on-resistance, RON, specified in this data sheet, is the Powered by ICminer.com Electronic-Library Service CopyRight 2003 resistance measured across the output contact when a pulsed current signal (IO = 800 mA) is applied to the output pins. The use of a pulsed signal (≤ 30 ms) implies that each junction temperature is equal to the ambient and case temperatures. The steadystate resistance, RSS , on the other hand, is the value of the resistance measured across the output contact when a DC current signal is applied to the output pins for a duration sufficient to reach thermal equilibrium. RSS includes the effects of the temperature rise of each element in the thermal model. Rating curves are shown in Figures 2 and 4. Figure 2 specifies the maximum average output current allowable for a given ambient temperature. Figure 4 specifies the output power dissipation allowable for a given ambient temperature. Above 55°C (for θCA = 80°C/W) and 107°C (for θCA = 40°C/W), the maximum allowable output current and power dissipation are related by the expression RSS = PO(max)/ (IO(max)) 2 from which RSS can be calculated. Staying within the safe area assures that the steady-state junction temperatures remain less than 150°C. As an example, for TA = 95°C and θCA = 80°C/W, Figure 2 shows that the output current should be limited to less than 610 mA. A check with Figure 4 shows that the output power dissipation at TA = 95°C and IO = 610 mA, will be limited to less than 0.35 W. This yields an RSS of 0.94 Ω. Design Considerations for Replacement of Electro-Mechanical Relays The HSSR-7110 family can replace electro-mechanical relays with comparable output voltage and current ratings. The following design issues need to be considered in the replacement circuit. Input Circuit: The drive circuit of the electro-mechanical relay coil needs to be modified so that the average forward current driving the LED of the HSSR7110 does not exceed 20 mA. A nominal forward drive current of 10 mA is recommended. A recommended drive circuit with 5 volt VCC and CMOS logic gates is shown in Figure 1. If higher VCC voltages are used, adjust the current limiting resistor to a nominal LED forward current of 10 mA. One important consideration to note is that when the LED is turned off, no more than 0.6 volt forward bias should be applied across the LED. Even a few microamps of current may be sufficient to turn on the HSSR7110, although it may take a considerable time. The drive circuit should maintain at least 5 mA of LED current during the ON condition. If the LED forward current is less than the 5 mA level, it will cause the HSSR-7110 to turn on with a longer delay. In addition, the power dissipation in the output power MOSFETs increases, which, in turn, may violate the power dissipation guidelines and affect the reliability of the device. Output Circuit: Unlike electromechanical relays, the designer should pay careful attention to the output on-resistance of solid state relays. The previous section, ”OnResistance and Rating Curves” describes the issues that need to be considered. In addition, for strictly dc applications the designer has an advantage using Connection B which has twice the output current rating as Connection A. Furthermore, for dc-only applications, with Connection B the on-resistance is considerably less when compared to Connection A. MIL-PRF-38534 Class H and DSCC SMD Test Program Agilent Technologies’ Hi-Rel Optocouplers are in compliance with MIL-PRF-38534 Class H. Class H devices are also in compliance with DSCC drawing 5962-93140. Testing consists of 100% screening and quality conformance inspection to MIL-PRF-38534. Output over-voltage protection is yet another important design consideration when replacing electro-mechanical relays with the HSSR-7110. The output power MOSFETs can be protected using Metal oxide varistors (MOVs) or TransZorbs against voltage surges that exceed the 90 volt output withstand voltage rating. Examples of sources of voltage surges are inductive load kickbacks, lightning strikes, and electro-static voltages that exceed the specifications on this data sheet. For more information on output load and protection refer to Application Note 1047. References: 1. Application Note 1047, ”Low On-Resistance Solid State Relays for High Reliability Applications.” 2. Reliability Data for HSSR-7110. MOV is a registered trademark of GE/RCA Solid State. TransZorb is a registered trademark of General Semiconductor. www.semiconductor.agilent.com Data subject to change. Copyright © 1999 Agilent Technologies Obsoletes 5965-1142E 5968-0470E (11/99) Powered by ICminer.com Electronic-Library Service CopyRight 2003