60 V/0.7 Ohm, General Purpose, 1 Form A, Solid State Relay Technical Data HSSR-8060 Features • Compact Solid-State Bidirectional Switch • Normally-Off Single-Pole Relay Function (1 Form A) • 60 V Output Withstand Voltage in Both Polarities at 25°C • 0.75/1.5 Amp Current Ratings (See Schematic for Connections A & B) • Low Input Current; CMOS Compatibility • Very Low On-resistance: 0.4 Ω Typical at 25°C • ac/dc Signal and Power Switching • Input-to-Output Momentary Withstand Insulation Voltage: 2500 Vac, 1 Minute • 16-kV ESD Immunity: MILSTD-883, Method 3015 • IEEE Surge Withstand Capability (IEEE STD 472-1974) • CSA Approved • UL 508 Approved Applications • Programmable Logic Controllers • Telecommunication Switching Equipment • Reed Relay Replacement • 28 Vdc, 24 Vac, 48 Vdc Load Driver • Industrial Relay Coil Driver Description The HSSR-8060 consists of a high-voltage circuit, optically coupled with a light emitting diode (LED). This device is a solid-state replacement for singlepole, normally-open (1 Form A) electromechanical relays used for general purpose switching of signals and low-power loads. The relay turns on (contact closes) with a minimum input current, IF, of 5 mA through the input LED. The relay turns off (contact opens) with an input voltage, VF, of 0.8 V or less. The detector contains a high speed photosensitive FET driver circuit and two high voltage MOSFETs. This relay’s logic level input control and very low typical output on-resistance of 0.4 Ω makes it suitable for both ac and dc loads. Connection A, as shown in the schematic, allows the relay to switch either ac or dc loads. Connection B, with the polarity and pin configuration as indicated in the schematic, allows the relay to switch dc loads only. The advantage of Connection B is that the on-resistance is significantly reduced, and the output current capability increases by a factor of two. The electrical and switching characteristics of the HSSR-8060 are specified from -40°C to +85°C. Functional Diagram TRUTH TABLE (POSITIVE LOGIC) LED OUTPUT ON L OFF H CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD. 2 Selection Guide 6-Pin DIP (300 Mil) Single Channel Package HSSR-8400[1] HSSR-8060 Maximum ON Resistance R(ON) Maximum Speed t(ON) msec 25°C 0.95 1.4 1.5 6 Ω 25°C 10 0.7 200 1 Maximum Output Voltage VO(off) V 25°C 400 60 200 90 Maximum Output Current Io(ON) mA 25°C 150 750 40 800 Minimum Input Current mA 5 5 1 5 Hermetic 8-Pin Single Channel Packages HSSR-7110[1] Note: 1. Technical data are on a separate HP publication. Ordering Information Specify part number followed by Option Number (if desired). HSSR-8060#XXX 300 = Gull Wing Surface Mount Lead Option 500 = Tape/Reel Package Option (1 k min.) Option data sheets available. Contact your Hewlett-Packard sales representative or authorized distributor for information. Schematic 6 + 1 VF IF SWITCH DRIVER 5 – 2 4 3 Outline Drawing 6-pin DIP Package (HSSR-8060) 7.36 (0.290) 7.88 (0.310) 9.40 (0.370) 9.90 (0.390) 6 5 4 TYPE NUMBER 0.20 (0.008) 0.33 (0.013) DATE CODE HP RXXXX YYWW PIN ONE DOT 1 2 5° TYP. 3 6.10 (0.240) 6.60 (0.260) 1.78 (0.070) MAX. 4.70 (0.185) MAX. 0.51 (0.020) MIN. 2.92 (0.115) MIN. 2.16 (0.085) 2.54 (0.100) 0.45 (0.018) 0.65 (0.025) 2.28 (0.090) 2.80 (0.110) DIMENSIONS IN MILLIMETERS AND (INCHES). 4 6-Pin Device Outline Drawing Option #300 (Gull Wing Surface Mount) 9.65 ± 0.25 (0.380 ± 0.010) PAD LOCATION (FOR REFERENCE ONLY) 4.826 (0.190) TYP. TYPE NUMBER HP RXXXX 6.35 ± 0.25 (0.250 ± 0.010) DATE CODE 9.398 (0.370) 9.906 (0.390) YYWW 0.381 (0.015) 0.635 (0.025) 1.194 (0.047) 1.778 (0.070) 9.65 ± 0.25 (0.380 ± 0.010) 1.78 (0.070) MAX. 7.62 ± 0.25 (0.300 ± 0.010) 0.635 ± 0.130 (0.025 ± 0.005) 0.20 (0.008) 0.30 (0.013) 4.19 MAX. (0.165) 0.635 ± 0.25 (0.025 ± 0.010) 2.54 (0.100) TYP. 2.29 (0.090) 12° NOM. [3] [5] DIMENSIONS IN mm (INCHES) TOLERANCES: xx.xx = 0.01 xx.xxx = 0.001 (unless otherwise specified) LEAD COPLANARITY MAXIMUM: 0.102 (0.004) Regulatory Information TEMPERATURE – °C Thermal Profile (Option #300) 260 240 220 200 180 160 140 120 100 80 60 40 20 0 ∆T = 145°C, 1°C/SEC ∆T = 115°C, 0.3°C/SEC UL Recognized under UL 508, Component Recognition Program, Industrial Control Switches, File E142465. ∆T = 100°C, 1.5°C/SEC 0 1 2 3 4 The HSSR-8060 has been approved by the following organizations: 5 6 7 8 9 10 TIME – MINUTES Figure 1. Maximum Solder Reflow Thermal Profile. (Note: Use of non-chlorine activated fluxes is recommended.) 11 12 CSA Approved under CAN/CSA-C22.2 No. 14-95, Industrial Control Equipment, File LR 87683. 5 Insulation and Safety Related Specifications Parameter Min. External Air Gap (External Clearance) Symbol L(IO1) Min. External Tracking Path (External Creepage) Min. Internal Plastic Gap (Internal Clearance) L(IO2) Tracking Resistance (Comparative Tracking Index) Isolation Group CTI Value Units 7.0 mm 8.5 mm 0.5 mm 200 V IIIa Conditions Measured from input terminals to output terminals, shortest distance through air Measured from input terminals to output terminals, shortest distance path along body Through insulation distance, conductor to conductor, usually the direct distance between the photoemitter and photodetector inside the optocoupler cavity DIN IEC 112/VDE 0303 PART 1 Material Group (DIN VDE 0110, 1/89, Table 1) Option 300 – surface mount classification is Class A in accordance with CECC 00802. Absolute Maximum Ratings Thermal Resistance Storage Temperature ................................................... -55°C to+125°C Operating Temperature - TA .......................................... -40°C to +85°C Case Temperature - TC .......................................................... +105°C[1] Average Input Current - IF ............................................................ 20 mA Repetitive Peak Input Current - IF ............................................... 40 mA (Pulse Width ≤ 1 ms; duty cycle ≤ 50%) Transient Peak Input Current - IF ............................................... 100 mA (Pulse Width ≤ 200 µs; duty cycle ≤ 1%) Reverse Input Voltage - VR ................................................................ 3 V Input Power Dissipation .............................................................. 40 mW Output Voltage (TA = 25°C) Connection A - VO ......................................................... -60 to +60 V Connection B - VO ............................................................. 0 to +60 V Average Output Current - Figure 3 (TA = 25°C, TC ≤ 70°C) Connection A - IO .....................................................................0.75 A Connection B - IO .....................................................................1.50 A Single Shot Peak Output Current (100 ms pulse width, TA = 25°C, IF = 10 mA) Connection A - IO .................................................................... 3.75 A Connection B - IO ...................................................................... 7.0 A Output Power Dissipation ..................................................... 750 mW[2] Lead Solder Temperature .... 260°C for 10 S (1.6 mm below seating plane) Infrared and Vapor Phase Reflow Temperature (Option #300) ......................................... See Fig. 1, Thermal Profile Typical Output MOSFET Junction to Case – θJC = 55°C/W Demonstrated ESD Performance Human Body Model: MIL-STD883 Method 3015.7 - 16 kV Machine Model: EIAJ 1988.3.28 Version 2), Test Method 20, Condition C – 1200 V Surge Withstand Capability IEEE STD 472-1974 6 Recommended Operating Conditions Parameter Input Current (ON) Input Voltage (OFF) Operating Temperature Output Voltage Connection A Connection B Output Current Connection A Connection B Symbol IF(ON) VF(OFF) TA Min. 5 0 -40 Max. 20 0.8 +85 Units mA Volt °C VO(OFF) -55 0 55 55 Volt IO(ON) -0.75 -1.5 0.75 1.5 A DC Electrical Specifications For -40oC ≤ TA ≤ +85°C unless otherwise specified. All Typicals at TA = 25°C. Parameter Output Withstand Voltage Output OnResistance Connection Sym. Min. A |VO(OFF)| 60 Max. Units V 0.4 0.7 Ω 0.1 0.2 1.6 0.4 1.0 55 A R(ON) B Output Leakage Current Output OffCapacitance Output Offset Voltage Input Reverse Breakdown Voltage Input Forward Voltage Input Diode Temperature Coefficient Input Capacitance Typ. Test Conditions VF = 0.8 V, IO = 250 µA, TA = 25°C VF = 0.8 V, IO = 250 µA IF = 10 mA, IO = 750 mA (pulse duration ≤ 30 ms), TA = 25oC IF = 10 mA, IO = 750 mA (pulse duration ≤ 30 ms) VF = 0.8 V, VO = 60 V, TA = 25°C A B A IO(OFF) 10-4 A C(OFF) 135 pF A |VOS| 1 µV VF = 0.8 V, VO = 25 V, f = 1 MHz IF = 5 mA, IO = 0 mA V IR = 100 µA V IF = 10 mA, TA = 25°C VR 3 VF 1.3 1.6 1.85 µA ∆VF /∆TA -1.3 mV/ oC CIN 72 pF IF = 10 mA VF = 0 V, f = 1 MHz Fig. Notes 5 6,7 3 13 14 18 15 4 7 Switching Specifications For -40°C ≤ TA ≤ +85°C with Connection A, unless otherwise specified. All Typicals at TA = 25°C. Parameter Symbol Min. Typ. Max. Units Test Conditions Fig. Notes Turn On Time tON 0.93 1.4 ms IF = 10 mA, VDD = 60 V, 2,8, 7 IO = 750 mA, TA = 25°C 9,10, 20,21 1.8 ms IF = 10 mA, VDD = 55 V, IO = 750 mA Turn Off Time tOFF 0.013 0.1 ms IF = 10 mA, VDD = 60 V, 2,8, IO = 750 mA, TA = 25°C 11,12, 20,21 0.1 ms IF = 10 mA, VDD = 55 V, IO = 750 mA Output |dVO /dt| 1000 V/µs V(peak) = 60 V, RM ≥ 1 MΩ, 16 Transient CM = 1000 pF, TA = 25°C Rejection Input-Output |dVI-O /dt| 2500 V/µs VDD = 5 V, VI-O(peak) = 1000 V, 17 Transient RL = 1 kΩ, CL = 25 pF, Rejection TA = 25°C Package Characteristics For 0°C ≤ TA ≤ 70°C, unless otherwise specified. All typicals at TA = 25°C. Parameter Symbol Min. Typ. Max. Units Test Conditions Fig. Notes Input-Output VISO 2500 V rms RH ≤ 50%, t = 1 min, TA = 25°C 5,6 Momentary Withstand Voltage* Resistance RI-O 100 GΩ VI-O = 500 Vdc, t = 1 min, 5 Input-Output RH = 45% Capacitance CI-O 1.0 pF VI-O = 0 V, f = 1 MHz 5 Input-Output *The Input-Output Momentary Withstand Voltage is a dielectric voltage rating that should not be interpreted as an input-output continuous voltage rating. For the continuous voltage rating refer to the VDE 0884 Insulation Characteristics Table (if applicable), your equipment level safety specification, or HP Application Note 1074, “Optocoupler Input-Output Endurance Voltage.” Notes: 1. The case temperature, TC, is measured at the center of the bottom of the package. 2. For derating, see Figure 4. The output power PO derating curve is obtained when the part is handling the maximum average output current IO as shown in Figure 3. 3. During the pulsed RON measurement (IO duration ≤ 30 ms), ambient (TA ) and case temperature (TC) are equal. 4. VOS is a function of I F, and is defined between pins 4 and 6, with pin 4 as the reference. VOS must be measured in a stable ambient (free of temperature gradients). 5. Device considered a two terminal device: pins 1, 2, and 3 shorted together and pins 4, 5, and 6 shorted together. 6. This is a momentary withstand proof test. These parts are 100% tested in production at 3000 V rms, one second. 7. For a faster turn-on time, the optional peaking circuit shown in Figure 2 may be implemented. 8 Figure 2. Recommended Input Circuit. Figure 3A. Maximum Average Output Current Rating vs. Ambient Temperature. Figure 3B. Maximum Average Output Current Rating vs. Case Temperature. Figure 4. Output Power Derating vs. Case Temperature. Figure 5. Normalized Typical Output Withstand Voltage vs. Temperature. Figure 6. Normalized Typical Output Resistance vs. Temperature. Figure 7. Typical On State Output I-V Characteristics. 9 Figure 8. Switching Test Circuit for tON, tOFF. Figure 9. Typical Turn On Time vs. Temperature. Figure 10. Typical Turn On Time vs. Input Current. Figure 11. Typical Turn Off Time vs. Temperature. CONNECTION A VF(OFF) = 0.8 V VO(OFF) = 55 V Figure 12. Typical Turn Off Time vs. Input Current. Figure 13. Typical Output Leakage vs. Temperature. Figure 14. Typical Output Capacitance vs. Output Voltage. 10 Figure 15. Typical Input Forward Current vs. Input Forward Voltage. Figure 16. Output Transient Rejection Test Circuit. Figure 17. Input-Output Transient Rejection Test Circuit. 11 Tjo T11 T12 Tjd TC TA θCA Figure 18. Voltage Offset Test Setup. = = = = = LED JUNCTION TEMPERATURE FET 1 JUNCTION TEMPERATURE FET 2 JUNCTION TEMPERATURE FET DRIVER JUNCTION TEMPERATURE CASE TEMPERATURE ( MEASURED AT CENTER OF PACKAGE BOTTOM) = AMBIENT TEMPERATURE (MEASURED 15 cm AWAY FROM THE PACKAGE) = CASE-TO-AMBIENT THERMAL RESISTANCE ALL THERMAL RESISTANCE VALUES ARE IN °C/W. Figure 19. Thermal Model. Figure 20. Turn On Time Variation with High Temperature Operating Life. Figure 21. Turn On Time Variation with Temperature Cycling. Applications Information Thermal Model The steady state thermal model for the HSSR-8400 is shown in Figure 19. The thermal resistance values given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistances between the LED and other internal nodes are very large in comparison with the other terms and are omitted for simplicity. The components do, however, interact indirectly through θCA, the case-to-ambient thermal resistance. All heat generated flows through θCA, which raises the case temperature TC accordingly. The value of θCA depends on the conditions of the board design and is, therefore, determined by the designer. The typical value for each output MOSFET junction-to-case thermal resistance is specified as 55°C/W. This is the thermal resistance from one MOSFET junction to the case when power is dissipated equally in the MOSFETs. The power dissipation in the FET Driver is negligible in comparison to the MOSFETs. On-Resistance and Derating Curves The output on-resistance, RON, specified in this data sheet, is the resistance measured across the output contact when a pulsed current signal (I O = 150 mA) is applied to the output pins. The use of a pulsed signal (≤ 30 ms) implies that each junction temperature is equal to the ambient and case temperatures. The steadystate resistance, RSS, on the other hand, is the value of the resistance measured across the output contact when a DC current signal is applied to the output pins for a duration sufficient to reach thermal equilibrium. RSS includes the effects of the temperature rise of each element in the thermal model. Derating curves are shown in Figures 3 and 4. Figure 3 specifies the maximum average output current allowable for a given ambient or case temperature. Figure 4 specifies the output power dissipation allowable for a given case temperature. Above a case temperature of 93°C, the maximum allowable output current and power dissipation are related by the expression RSS = PO(max)/(IO(max))2 from which RSS can be calculated. Staying within the safe area assures that the steady state junction temperatures remain less than 125°C. As an example, for a case temperature of 100°C, Figure 4 shows that the output power dissipation should be limited to less than 0.5 watts. A check with Figure 3B shows that the output current should be limited to less than 150 mA. This yields an RSS of 22 Ω. Turn On Time Variation For applications which are sensitive to turn on time, the designer should refer to Figures 20 and 21. These figures show that although there is very little variation in tON within most of the population, a portion of the distribution will vary with use. The optional peaking circuit shown in Figure 2 can be used to reduce the total turn on time and, consequently, any associated variation. www.hp.com/go/isolator For technical assistance or the location of your nearest Hewlett-Packard sales office, distributor or representative call: Americas/Canada: 1-800-235-0312 or 408-654-8675 Far East/Australasia: Call your local HP sales office. Japan: (81 3) 3335-8152 Europe: Call your local HP sales office. Data subject to change. Copyright © 1998 Hewlett-Packard Co. Obsoletes 5965-3575E (11/96) 5968-2539E (10/98)