ETC RF1S740AST

IRF740A / RF1S740AST
10A, 400V, 0.550 Ohm, N-Channel SMPS Power MOSFET
Applications
Features
• Switch Mode Power Supplies (SMPS)
• Low Gate Charge Qg results in Simple Drive
Requirement
• Uninterruptable Power Supply
• Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
• High Speed Power Switching
• Improved Body Diode
Package
Symbol
JEDEC TO-220AB
JEDEC TO-263AB
DRAIN
(FLANGE)
D
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
G
GATE
S
SOURCE
Absolute Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
VDSS
Parameter
Drain to Source Voltage
VGS
Gate to Source Voltage
Ratings
400
Units
V
±30
V
10
A
Drain Current
ID
Continuous (TC = 25oC, VGS = 10V)
o
Continuous (TC = 100 C, VGS = 10V)
6.3
A
Pulsed
40
A
147
1.18
W
W/oC
PD
Power dissipation
Derate above 25oC
TJ, TSTG
Operating and Storage Temperature
Soldering Temperature for 10 seconds
Mounting Torque, 8-32 or M3 Screw
-55 to 150
o
C
300 (1.6mm from case)
o
C
10ibf*in (1.1N*m)
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
RθCS
Thermal Resistance Case to Sink, Flat, Greased Surface
RθJA
Thermal Resistance Junction to Ambient
©2002 Fairchild Semiconductor Corporation
0.85
0.50 TYP
62
o
C/W
oC/W
o
C/W
IRF740A / RF1S740AST Rev. C
IRF740A / RF1S740AST
September 2002
Device Marking
IRF740A
Device
IRF740A
Package
TO-220AB
Reel Size
Tube
Tape Width
NA
Quantity
50
RF1S740A
RF1S740AST
TO-263AB
330mm
24mm
800
Electrical Characteristics TJ = 25°C (unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
400
-
-
V
-
0.48
-
Statics
BVDSS
Drain to Source Breakdown Voltage
∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient
ID = 250µA, VGS = 0V
V/°C Reference to 25°C,
ID = 1mA
rDS(ON)
Drin to Source On-Resistance
VGS = 10V, ID = 6A
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VDS = 350V
-
0.40
0.55
Ω
2.0
3.6
4.0
V
-
-
1
-
-
250
µA
-
±100
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
VGS = ±20V
-
VDS = 50V, ID = 6A
4.9
-
-
S
VGS = 10V,
VDS = 320V,
ID = 10A
-
17.2
22
nC
-
4.5
6.0
nC
-
5.8
7.5
nC
VDD = 200V,
ID = 10A
RG = 10Ω,
RD = 19.5Ω
-
6
-
ns
-
8
-
ns
-
21
-
ns
-
7
-
ns
-
1060
-
pF
-
150
-
pF
-
7.8
-
pF
-
1490
-
pF
-
52
-
pF
630
-
-
mJ
-
-
10
A
12.5
-
-
mJ
-
-
10
A
-
-
40
A
VGS = 0V
TC = 150o
nA
Dynamics
gfs
Forward Transconductance
Qg(TOT)
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
td(ON)
Turn-On Delay Time
tr
Rise Time
td(OFF)
Turn-Off Delay Time
tf
Fall Time
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1MHz
COSS
Output Capacitance
VGS = 0V, VDS = 1V,
f = 1MHz
COSS
Output Capacitance
VGS = 0V, VDS = 320V,
f = 1MHz
Avalanche Characteristics
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Drain-Source Diode Characteristics
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Source to Drain Diode Voltage
trr
QRR
MOSFET symbol
showing the
integral reverse
p-n junction diode.
ISD = 18A
D
G
-
-
1.25
V
ISD = 9A
-
-
1.0
V
Reverse Recovery Time
ISD = 10A, dISD/dt = 100A/ms
-
240
360
ns
Reverse Recovered Charge
ISD = 10A, dISD/dt = 100A/ms
-
1.9
2.9
µC
©2002 Fairchild Semiconductor Corporation
S
IRF740A / RF1S740AST Rev. C
IRF740A / RF1S740AST
Package Marking and Ordering Information
IRF740A / RF1S740AST
Typical Characteristic
10
100
TC = 25oC
VGS DESCENDING
10V
7V
6V
5.5V
5V
4.5V
ID, DRAIN TO SOURCE CURRENT (A)
ID, DRAIN TO SOURCE CURRENT (A)
100
1.0
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
0.1
0.1
1.0
10
TC = 150oC
VGS DESCENDING
10V
6V
5.5V
5V
4.5V
10
1.0
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
0.1
0.1
100
1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
TJ = 25oC
PULSE DURATION = 80ms
ID , DRAIN CURRENT (A)
DUTY CYCLE = 0.5% MAX
VDD = 50V
TJ = 150oC
10
1.0
0.1
3
4
5
6
7
1.0
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
0.8
0.6
0.4
0.2
VGS = 10V, ID = 10A
0
-50
8
0
-25
VGS , GATE TO SOURCE VOLTAGE (V)
VGS , GATE TO SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
103
COSS
102
CRSS
CISS = CGS + CGD
COSS @ CDS + CGD
CRSS = CGD
10
100
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Capacitance vs Drain To Source Voltage
©2002 Fairchild Semiconductor Corporation
75
100
125
150
16
VGS = 0V, f = 1MHz
100
1.0
50
Figure 4. Drain To Source On Resistance vs
Junction Temperatrue
CISS
101
25
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Transfer Characteristics
104
100
Figure 2. Output Characteristics
rDS(ON), DRAIN TO SOURCE ON RESISTANCE (W)
Figure 1. Output Characteristics
100
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID = 10A
12
200V
8
320V
80V
4
0
0
10
20
30
40
Qg, GATE CHARGE (nC)
Figure 6. Gate Charge Waveforms For Constant
Gate Current
IRF740A / RF1S740AST Rev. C
100
TC = 25oC
TJ = 150oC
ID, DRAIN CURRENT (A)
ISD , SOURCE TO DRAIN CURRENT (A)
100
TJ = 25oC
10
1.0
10
100ms
1ms
OPERATION IN THIS AREA
LIMITED BY RDS(ON)
1.0
10ms
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.4
1.2
1.6
1.8
10
2.0
100
VSD , SOURCE TO DRAIN VOLTAGE (V)
1000
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Source to Drain Diode Forward Voltage
Figure 8. Maximum Safe Operating Area
10
ID, DRAIN CURRENT (A)
8
6
4
2
0
25
50
75
125
100
150
TC, CASE TEMPERATURE (°C)
ZqJC , NORMALIZED THERMAL RESPONSE
Figure 9. Maximum Drain Current vs Case Temperature
100
0.50
0.20
0.10
10-1
t1
0.05
PD
0.02
t2
0.01
10-2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZqJC X RqJC) + TC
SINGLE PULSE
10-3
10-6
10-5
10-4
10-3
10-2
10-1
t1 , RECTANGULAR PULSE DURATION (s)
Figure 10. Normalized Transient Thermal Impedance, Junction to Case
©2002 Fairchild Semiconductor Corporation
IRF740A / RF1S740AST Rev. C
IRF740A / RF1S740AST
Typical Characteristic
BVDSS
VDS
tP
VDS
L
IAS
VDD
VARY tP TO OBTAIN
+
RG
REQUIRED PEAK IAS
VDD
-
VGS
DUT
tP
IAS
0V
0
0.01W
tAV
Figure 11. Unclamped Energy Test Circuit
VDS
Figure 12. Unclamped Energy Waveforms
VDD
Qg(TOT)
RL
VDS
VGS = 10V
VGS
Qg(5)
+
VDD
VGS = 5V
VGS
-
VGS = 1V
DUT
0
Ig(REF)
Qg(TH)
Qgs
Qgd
Ig(REF)
0
Figure 13. Gate Charge Test Circuit
Figure 14. Gate Charge Waveforms
VDS
tON
tOFF
td(ON)
td(OFF)
tr
RL
VDS
tf
90%
90%
+
VGS
VDD
-
10%
0
10%
DUT
90%
RGS
VGS
50%
50%
PULSE WIDTH
VGS
0
Figure 15. Switching Time Test Circuit
©2002 Fairchild Semiconductor Corporation
10%
Figure 16. Switching Time Waveform
IRF740A / RF1S740AST Rev. C
IRF740A / RF1S740AST
Test Circuits and Waveforms
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I1