SuperFET FCH47N60 / FCA47N60 Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. • Typ. Rds(on)=0.058Ω • Ultra low gate charge (typ. Qg=210nC) • Low effective output capacitance (typ. Coss.eff=420pF) • 100% avalanche tested TM D G G D S TO-247 FDH Series TO-3P FDA Series G DS S Absolute Maximum Ratings Symbol Parameter FCH47N60 VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS FCA47N60 Unit 600 V 47 29.7 A A (Note 1) 141 A ± 30 V Single Pulsed Avalanche Energy (Note 2) 1800 mJ IAR Avalanche Current (Note 1) 47 A EAR Repetitive Avalanche Energy (Note 1) 41.7 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 4.5 V/ns 417 3.33 W W/°C -55 to +150 °C 300 °C (TC = 25°C) - Derate above 25°C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2006 Fairchild Semiconductor Corporation FCH47N60 / FCA47N60 Rev.B 1 Typ. Max. Unit -- 0.3 °C/W 0.24 -- °C/W -- 41.7 °C/W www.fairchildsemi.com FCH47N60 / FCA47N60 December 2006 Device Marking Device Package Reel Size Tape Width Quantity FCH47N60 FCH47N60 TO-247 - - 30 FCA47N60 FCA47N60 TO-3P - - 30 FCA47N60 FCA47N60_F109 TO-3PN - - 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 600 -- -- V VGS = 0V, ID = 250μA, TJ = 150°C -- 650 -- V ID = 250μA, Referenced to 25°C -- 0.6 -- V/°C ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 47A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C --- --- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 23.5A -- 0.058 0.07 Ω gFS Forward Transconductance VDS = 40V, ID = 23.5A -- 40 -- S -- 5900 8000 pF -- 3200 4200 pF (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Crss Reverse Transfer Capacitance -- 250 -- pF Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 160 -- pF Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 420 -- pF VDD = 300V, ID = 47A RG = 25Ω -- 185 430 ns -- 210 450 ns -- 520 1100 ns -- 75 160 ns -- 210 270 nC -- 38 -- nC -- 110 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 480V, ID = 47A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 47 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 141 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 47A -- -- 1.4 V trr Reverse Recovery Time 590 -- ns Reverse Recovery Charge VGS = 0V, IS = 47A dIF/dt =100A/μs -- Qrr -- 25 -- μC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 47A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FCH47N60 / FCA47N60 Rev. B 2 www.fairchildsemi.com FCH47N60 / FCA47N60 Package Marking and Ordering Information FCH47N60 / FCA47N60 Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] 10 2 ID , Drain Current [A] 2 1 10 * Notes : 1. 250μs Pulse Test 0 10 o 2. TC = 25 C -1 0 10 10 o 150 C 1 10 o -55 C * Note 1. VDS = 40V 0 2. 250μs Pulse Test 10 2 1 10 o 25 C 10 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 0.20 0.15 VGS = 10V 0.10 VGS = 20V 0.05 20 40 60 80 100 120 140 160 180 1 10 o o 150 C 25 C * Notes : 1. VGS = 0V 10 o 0 2 10 0 * Note : TJ = 25 C 0.00 200 2. 250μs Pulse Test 0.2 0.4 0.6 0.8 Figure 5. Capacitance Characteristics 1.4 1.6 12 Ciss = Cgs + Cgd (Cds = shorted) VDS = 100V Coss = Cds + Cgd 25000 VGS, Gate-Source Voltage [V] Crss = Cgd 20000 Coss 15000 5000 1.2 Figure 6. Gate Charge Characteristics 30000 10000 1.0 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Capacitance [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR , Reverse Drain Current [A] RDS(ON) [Ω],Drain-Source On-Resistance 6 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] * Notes : 1. VGS = 0 V Ciss 2. f = 1 MHz Crss 0 -1 10 0 10 1 10 VDS = 250V VDS = 400V 8 6 4 2 * Note : ID = 47A 0 0 50 100 150 200 250 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FCH47N60 / FCA47N60 Rev. B 10 3 www.fairchildsemi.com FCH47N60 / FCA47N60 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250 μA Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 47 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 50 100 150 200 o TJ, Junction Temperature [ C] Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 50 Operation in This Area is Limited by R DS(on) 2 10 40 1 ID, Drain Current [A] ID, Drain Current [A] 100 us 1 ms 10 ms 10 DC 0 10 * Notes : o 1. TC = 25 C -1 10 30 20 10 o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0 25 3 10 10 50 75 100 125 150 o VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] D = 0 .5 10 -1 * N o te s : Z o 0 .2 1 . Z θ J C ( t) = 0 .3 0 .1 3 . T J M - T C = P D M * Z θ J C ( t) 0 .0 5 PDM C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 t1 0 .0 2 θJC (t), Thermal Response Figure 10. Transient Thermal Response Curve 10 -2 0 .0 1 10 -5 t2 s in g le p u ls e 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] FCH47N60 / FCA47N60 Rev. B 4 www.fairchildsemi.com FCH47N60 / FCA47N60 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCH47N60 / FCA47N60 Rev. B 5 www.fairchildsemi.com FCH47N60 / FCA47N60 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p FCH47N60 / FCA47N60 Rev. B 6 www.fairchildsemi.com FCH47N60 / FCA47N60 Mechanical Dimensions TO-247AD (FKS PKG CODE 001) Dimensions in Millimeters FCH47N60 / FCA47N60 Rev. B 7 www.fairchildsemi.com FCH47N60 / FCA47N60 Mechanical Dimensions (Continued) TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters FCH47N60 / FCA47N60 Rev. B 8 www.fairchildsemi.com FCH47N60 / FCA47N60 Mechanical Dimensions (Continued) TO-3PN Dimensions in Millimeters FCH47N60 / FCA47N60 Rev. B 9 www.fairchildsemi.com FCH47N60 / FCA47N60 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 10 FCH47N60 / FCA47N60 Rev. B www.fairchildsemi.com